FGH20N60UFDTU

IGBT - Field Stop 600 V, 20 A FGH20N60UFD Description Using novel field stop IGBT Technology, ON Semiconductor’s field stop IGBTs offer the optimum performance for solar inverter, UPS, welder and PFC applications where low conduction and switching losses are essential. www.onsemi.com Features • • • • • C High Current Capability Low Saturation Voltage: VCE(sat) = 1.8 V @ IC = 20 A High Input Impedance Fast Switching This Device is Pb−Free and is RoHS Compliant G E Applications • Solar Inverter, UPS, Welder, PFC E ABSOLUTE MAXIMUM RATINGS Rating Symbol Value Unit Collector to Emitter Voltage VCES 600 V Gate to Emitter Voltage VGES ±20 V Transient Gate to Emitter Voltage ±30 Collector Current @ TC = 25°C @ TC = 100°C IC Pulsed Collector Current @ TC = 25°C ICM (Note 1) Diode Forward Current @ TC = 25°C @ TC = 100°C IF Pulsed Diode Maximum Forward Current Maximum Power Dissipation @ TC = 25°C @ TC = 100°C IFM (Note 1) PD A 60 60 W 165 66 TJ −55 to + 150 °C Storage Temperature Range Tstg −55 to + 150 °C Maximum Lead Temperature for Soldering, 1/8″ from Case for 5 Seconds TL 300 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Repetitive rating: Pulse width limited by max. junction temperature. February, 2020 − Rev. 2 $Y&Z&3&K FGH20N60 UFD A Operating Junction Temperature © Semiconductor Components Industries, LLC, 2008 MARKING DIAGRAM A 20 10 G TO−247−3LD CASE 340CK A 40 20 C 1 $Y &Z &3 &K FGH20N60UFD = ON Semiconductor Logo = Assembly Plant Code = Numeric Date Code = Lot Code = Specific Device Code ORDERING INFORMATION See detailed ordering and shipping information on page 2 of this data sheet. Publication Order Number: FGH20N60UFD/D FGH20N60UFD THERMAL CHARACTERISTICS Symbol Typ. Max. Unit Thermal Resistance Junction−to−Case, for IGBT Parameter RJC − 0.76 °C/W Thermal Resistance Junction−to−Case, for Diode RJC − 2.51 °C/W Thermal Resistance Junction−to−Ambient RJA − 40 °C/W PACKAGE MARKING AND ORDERING INFORMATION Part Number Top Mark Package Packing Method Reel Size Tape Width Quantity FGH20N60UFDTU FGH20N60UFD TO−247 Tube N/A N/A 30 Units ELECTRICAL CHARACTERISTICS OF THE IGBT (TC = 25°C unless otherwise noted) Parameter Symbol Test Conditions Min Typ Max Unit OFF CHARACTERISTICS Collector to Emitter Breakdown Voltage BVCES VGE = 0 V, IC = 250 A 600 − − V Temperature Coefficient of Breakdown Voltage BVCES/TJ VGE = 0 V, IC = 250 A − 0.6 − V/°C Collector Cut−Off Current ICES VCE = VCES, VGE = 0 V − − 250 A G−E Leakage Current IGES VGE = VGES, VCE = 0 V − − ±400 nA G−E Threshold Voltage VGE(th) IC = 250 A, VCE = VGE 4.0 5.0 6.5 V Collector to Emitter Saturation Voltage VCE(sat) IC = 20 A, VGE = 15 V − 1.8 2.4 V IC = 20 A, VGE = 15 V, TC = 125°C − 2.0 − V VCE = 30 V, VGE = 0 V, f = 1 MHz − 940 − pF ON CHARACTERISTICs DYNAMIC CHARACTERISTICS Input Capacitance Cies Output Capacitance Coes − 110 − pF Reverse Transfer Capacitance Cres − 40 − pF − 13 − ns − 17 − ns td(off) − 87 − ns tf − 32 64 ns Turn−On Switching Loss Eon − 0.38 − mJ Turn−Off Switching Loss Eoff − 0.26 − mJ Total Switching Loss Ets − 0.64 − mJ Turn−On Delay Time td(on) − 13 − ns − 16 − ns td(off) − 92 − ns tf − 63 − ns Turn−On Switching Loss Eon − 0.41 − mJ Turn−Off Switching Loss Eoff − 0.36 − mJ Total Switching Loss Ets − 0.77 − mJ Total Gate Charge Qg − 63 − nC Gate to Emitter Charge Qge − 7 − nC Gate to Collector Charge Qgc − 32 − nC SWITCHING CHARACTERISTICS Turn−On Delay Time Rise Time Turn−Off Delay Time Fall Time Rise Time Turn−Off Delay Time Fall Time td(on) tr tr VCC = 400 V, IC = 20 A, RG = 10  VGE = 15 V, Inductive Load, TC = 25°C VCC = 400 V, IC = 20 A, RG = 10  VGE = 15 V, Inductive Load, TC = 125°C VCE = 400 V, IC = 20 A, VGE = 15 V www.onsemi.com 2 FGH20N60UFD ELECTRICAL CHARACTERISTICS OF THE DIODE (TJ = 25°C unless otherwise noted) Parametr Diode Forward Voltage Symbol VFM Diode Reverse Recovery Time trr Diode Reverse Recovery Charge Qrr Test Conditions IF = 10 A IF = 10 A, diF/dt = 200 A/s Min Typ Max Unit TC = 25°C − 1.9 2.5 V TC = 125°C − 1.7 − TC = 25°C − 34 − TC = 125°C − 57 − TC = 25°C − 41 − TC = 125°C − 96 − ns nC Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. www.onsemi.com 3 FGH20N60UFD TYPICAL CHARACTERISTICS TC = 25°C 60 20 V Collector Current, IC [A] 15 V 10 V 20 VGE = 8 V 1.5 3.0 4.5 VGE = 8 V 0 0.0 6.0 1.5 3.0 6.0 4.5 Collector−Emitter Voltage, VCE [V] Figure 2. Typical Output Characteristics 60 60 Common Emitter VGE = 15 V TC = 25°C TC = 125°C 40 Collector Current, IC [A] Collector Current, IC [A] 10 V 20 Figure 1. Typical Output Characteristics 20 3 1 2 Collector−Emitter Voltage, VCE [V] 0 Common Emitter VCE = 20 V TC = 25°C TC = 125°C 40 20 0 4 6 8 10 Gate−Emitter Voltage, VGE [V] 4 3.2 20 Collector−Emitter Voltage, VCE [V] Common Emitter VGE = 15 V 2.8 40 A 2.4 2.0 20 A 1.6 IC = 10 A 1.2 0.8 25 50 75 100 12 Figure 4. Transfer Characteristics Figure 3. Typical Saturation Voltage Characteristics Collector−Emitter Voltage, VCE [V] 12 V 40 Collector−Emitter Voltage, VCE [V] 0 20 V 15 V 40 0 0.0 TC = 125°C 12 V Collector Current, IC [A] 60 16 12 8 40 A 4 0 125 Collector−Emitter Case Temperature, TC [°C] Common Emitter TC = −40°C 20 A IC = 10 A 0 4 8 12 16 20 Gate−Emitter Voltage, VGE [V] Figure 6. Saturation Voltage vs. VGE Figure 5. Saturation Voltage vs. Case Temperature at Variant Current Level www.onsemi.com 4 FGH20N60UFD TYPICAL CHARACTERISTICS 20 Common Emitter TC = 25°C 16 Collector−Emitter Voltage, VCE [V] Collector−Emitter Voltage, VCE [V] 20 12 8 40 A 4 20 A IC = 10 A 0 12 16 8 4 Gate−Emitter Voltage, VGE [V] 0 Common Emitter TC = 125°C 16 12 8 20 A 4 IC = 10 A 0 20 0 2500 Gate−Emitter Voltage, VGE [V] Capacitance [pF] Cies 1000 Coes 500 Cres 0 0.1 1 10 20 15 Common Emitter VGE = 0 V, f = 1 MHz TC = 25°C 1500 16 12 8 4 Gate−Emitter Voltage, VGE [V] Figure 8. Saturation Voltage vs. VGE Figure 7. Saturation Voltage vs. VGE 2000 40 A 300 V VCC = 100 V 9 200 V 6 3 0 30 Common Emitter TC = 25°C 12 20 0 40 60 80 Gate Charge, Qg [nC] Collector−Emitter Voltage, VCE [V] Figure 10. Gate Charge Characteristics Figure 9. Capacitance Characteristics 100 100 100 s 10 Switching Time [ns] Collector Current, IC [A] 10 s 1ms 10 ms 1 DC Single Nonrepetitive Pulse TC = 25°C Curves must be derated linearly with increase in temperature 0.1 0.01 1 10 100 tr 1 1000 Collector−Emitter Voltage, VCE [V] td(on) 10 0 10 Common Emitter VCC = 400 V, VGE = 15 V IC = 20 A TC = 25°C TC = 125°C 20 30 40 50 Gate Resistance, RG [] 60 Figure 12. Turn−on Characteristics vs. Gate Resistance Figure 11. SOA Characteristics www.onsemi.com 5 FGH20N60UFD TYPICAL CHARACTERISTICS 200 Common Emitter VCC = 400 V, VGE = 15V IC = 20 A TC = 25°C TC = 125°C td(off) 100 tf 10 0 10 20 30 Common Emitter VGE = 15 V, RG = 10  TC = 25°C TC = 125°C 100 Switching Time [ns] Switching Time [ns] 1000 40 50 tr td(on) 10 3 60 0 Gate Resistance, RG [] 3 Common Emitter VGE = 15 V, RG = 10  TC = 25°C TC = 125°C Switching Loss [mJ] Switching Time [ns] 300 td(off) 100 tf 10 0 10 20 30 Collector Current, IC [A] 1 Eon Eoff 0.1 40 Common Emitter VCC = 400 V, VGE = 15 V IC = 20 A TC = 25°C TC = 125°C 0 Figure 15. Turn−off Characteristics vs. Collector Current 10 20 30 40 50 Gate Resistance, RG [] 60 Figure 16. Switching Loss vs. Gate Resistance 100 Common Emitter VGE = 15 V, RG = 10  TC = 25°C TC = 125°C 1 Collector Current, IC [A] 10 Switching Loss [mJ] 40 Figure 14. Turn−on Characteristics vs. Collector Current Figure 13. Turn−off Characteristics vs. Gate Resistance Eon Eoff 0.1 0.02 10 20 30 Collector Current, IC [A] 0 10 20 30 10 1 40 Safe Operating Area VGE = 15V, TC = 125°C 1 10 100 1000 Collector Current, IC [A] Collector−Emitter Voltage, VCE [V] Figure 17. Switching Loss vs. Collector Current Figure 18. Turn−off Switching SOA Characteristics www.onsemi.com 6 FGH20N60UFD TYPICAL CHARACTERISTICS 100 TJ = 125°C Reverse Current, IR [A] Forward Current, IF [A] 40 10 T = 75°C J TJ = 25°C 1 TC = 25°C TC = 75°C TC = 125°C 0.1 0 1 2 3 Forward Voltage, VF [V] 10 TC = 125°C 1 TC = 75°C 0.1 1E−3 4 TC = 25°C 0.01 0 100 60 Reverse Recovery Time, trr [ns] 0.05 200 A/s 0.04 0.03 di/dt = 100 A/s 0.02 0 5 10 15 Forward Current, IF [A] 50 di/dt = 100 A/s 40 30 20 10 20 200 A/s 0 5 1 10 15 Forward Current, IF [A] Figure 22. Reverse Recovery Time Figure 21. Stored Charge Thermal Response [Zjc] Stored Recovery Charge, Qrr [nC] 600 Figure 20. Reverse Current Figure 19. Forward Characteristics 0.01 200 300 400 500 Reverse Voltage, VR [V] 0.5 0.2 0.1 0.1 0.05 0.02 0.01 0.01 Single Pulse 1E−3 1E−5 PDM t1 t Duty Factor, D = t1/t2 2 Peak Tj = Pdm x Zjc + TC 1E−4 1E−3 0.01 0.1 Rectangular Pulse Duration [sec] Figure 23. Transient Thermal Impedance of IGBT www.onsemi.com 7 1 20 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS TO−247−3LD SHORT LEAD CASE 340CK ISSUE A A DATE 31 JAN 2019 A E P1 P A2 D2 Q E2 S B D 1 2 D1 E1 2 3 L1 A1 L b4 c (3X) b 0.25 M (2X) b2 B A M DIM (2X) e GENERIC MARKING DIAGRAM* AYWWZZ XXXXXXX XXXXXXX XXXX = Specific Device Code A = Assembly Location Y = Year WW = Work Week ZZ = Assembly Lot Code *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “G”, may or may not be present. Some products may not follow the Generic Marking. DOCUMENT NUMBER: DESCRIPTION: 98AON13851G TO−247−3LD SHORT LEAD A A1 A2 b b2 b4 c D D1 D2 E E1 E2 e L L1 P P1 Q S MILLIMETERS MIN NOM MAX 4.58 4.70 4.82 2.20 2.40 2.60 1.40 1.50 1.60 1.17 1.26 1.35 1.53 1.65 1.77 2.42 2.54 2.66 0.51 0.61 0.71 20.32 20.57 20.82 13.08 ~ ~ 0.51 0.93 1.35 15.37 15.62 15.87 12.81 ~ ~ 4.96 5.08 5.20 ~ 5.56 ~ 15.75 16.00 16.25 3.69 3.81 3.93 3.51 3.58 3.65 6.60 6.80 7.00 5.34 5.46 5.58 5.34 5.46 5.58 Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. 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