FGH40N65UFDTU

IGBT - Field Stop 650 V, 40 A FGH40N65UFDTU, FGH40N65UFDTU-F085 Description Using novel field stop IGBT technology, ON Semiconductor’s field stop IGBTs offer the optimum performance for Automotive Chargers, Inverter, and other applications where low conduction and switching losses are essential. www.onsemi.com VCES IC 650 V 40 A Features • • • • • • C High Current Capability Low Saturation Voltage: VCE(sat) = 1.8 V @ IC = 40 A High Input Impedance Fast Switching Qualified to Automotive Requirements of AEC−Q101 (FGH40N65UFDTU−F085) These Devices are Pb−Free and are RoHS Compliant G E E Applications • Automotive Chargers, Converters, High Voltage Auxiliaries • Inverters, PFC, UPS C G COLLECTOR (FLANGE) TO−247−3LD CASE 340CK MARKING DIAGRAM $Y&Z&3&K FGH40N65 UFD Industrial $Y &Z &3 &K FGH40N65UFD / FGH40N65UFDTU $Y&Z&3&K FGH40N65 UFDTU Automotive = ON Semiconductor Logo = Assembly Plant Code = Numeric Date Code = Lot Code = Specific Device Code ORDERING INFORMATION See detailed ordering and shipping information on page 2 of this data sheet. © Semiconductor Components Industries, LLC, 2015 January, 2020 − Rev. 3 1 Publication Order Number: FGH40N65UFD−F085/D FGH40N65UFDTU, FGH40N65UFDTU−F085 ABSOLUTE MAXIMUM RATINGS Symbol Ratings Unit VCES Collector to Emitter Voltage 650 V VGES Gate to Emitter Voltage ±20 V TC = 25°C 80 A TC = 100°C 40 A Pulsed Collector Current TC = 25°C 120 A Maximum Power Dissipation TC = 25°C 290 W TC = 100°C 116 W Operating Junction Temperature −55 to +150 °C Storage Temperature Range −55 to +150 °C 300 °C IC ICM (Note 1) PD TJ TSTG TL Description Collector Current Maximum Lead Temp. for Soldering Purposes, 1/8” from Case for 5 Seconds Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Repetitive rating: Pulse width limited by max. junction temperature. THERMAL CHARACTERISTICS Symbol Parameter Typ. Unit RqJC (IGBT) Thermal Resistance, Junction to Case 0.43 _C/W RqJC (Diode) Thermal Resistance, Junction to Case 1.45 _C/W 40 _C/W RqJA Thermal Resistance, Junction to Ambient PACKAGE MARKING AND ORDERING INFORMATION Part Number Top Mark Package Packing Method Qty per Tube FGH40N65UFDTU FGH40N65UFD TO−247 Tube 30 FGH40N65UFDTU−F085* FGH40N65UFDTU TO−247 Tube 30 *Qualified to Automotive Requirements of AEC−Q101. www.onsemi.com 2 FGH40N65UFDTU, FGH40N65UFDTU−F085 ELECTRICAL CHARACTERISTICS OF THE IGBT (TC = 25°C unless otherwise noted) Parameter Symbol Test Conditions Min. Typ. Max. Unit VGE = 0 V, IC = 250 mA 650 − − V VGE = 0 V, IC = 250 mA − 0.6 − V/°C OFF CHARACTERISTICS BVCES Collector to Emitter Breakdown Voltage DBVCES / DTJ Temperature Coefficient of Breakdown Voltage ICES Collector Cut−Off Current VCE = VCES, VGE = 0 V − − 250 mA IGES G−E Leakage Current VGE = VGES, VCE = 0 V − − ±400 nA 4.0 5.0 6.5 V ON CHARACTERISTICS VGE(th) G−E Threshold Voltage IC = 250 mA, VCE = VGE VCE(sat) Collector to Emitter Saturation Voltage IC = 40 A, VGE = 15 V, − 1.8 2.4 V IC = 40 A, VGE = 15 V, TC = 125°C − 2.0 − V VCE = 30 V, VGE = 0 V, f = 1 MHz − 1860 − pF − 200 − pF − 65 − pF − 23 − ns − 35 − ns Turn−Off Delay Time − 126 − ns Fall Time − 26 60 ns Eon Turn−On Switching Loss − 1.28 − mJ Eoff Turn−Off Switching Loss − 0.50 − mJ Ets Total Switching Loss − 1.78 − mJ Td(on) Turn−On Delay Time − 21 − ns DYNAMIC CHARACTERISTICS Cies Input Capacitance Coes Output Capacitance Cres Reverse Transfer Capacitance SWITCHING CHARACTERISTICS Td(on) Tr Td(off) Tf Tr Turn−On Delay Time Rise Time VCC = 400 V, IC = 40 A, RG = 10 W, VGE = 15 V, Inductive Load, TC = 125°C − 39 − ns Turn−Off Delay Time − 131 − ns Fall Time − 72 − ns Eon Turn−On Switching Loss − 1.62 − mJ Eoff Turn−Off Switching Loss − 0.79 − mJ Ets Total Switching Loss − 2.41 − mJ Qg Total Gate Charge − 119 − nC Qge Gate to Emitter Charge − 14 − nC Qgc Gate to Collector Charge − 64 − nC Td(off) Tf Rise Time VCC = 400 V, IC = 40 A, RG = 10 W, VGE = 15 V, Inductive Load, TC = 25°C VCE = 400 V, IC = 40 A, VGE = 15 V Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. www.onsemi.com 3 FGH40N65UFDTU, FGH40N65UFDTU−F085 ELECTRICAL CHARACTERISTICS OF THE DIODE (TC = 25°C unless otherwise noted) Symbol VFM Trr Qrr Parameter Diode Forward Voltage Diode Reverse Recovery Time Test Conditions IF = 20 A IF = 20 A, diF/dt = 200 A/ms Diode Reverse Recovery Charge Min Typ Max Unit TC = 25°C − 1.80 2.6 V TC = 125°C − 1.71 − TC = 25°C − 65 − TC = 125°C − 215 − TC = 25°C − 145 − TC = 125°C − 775 − ns nC Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. www.onsemi.com 4 FGH40N65UFDTU, FGH40N65UFDTU−F085 TYPICAL PERFORMANCE CHARACTERISTICS 120 120 o 20V 15V 100 80 60 10V 40 20 1.5 3.0 4.5 10V 40 VGE = 8V 20 0 0.0 6.0 o Collector Current, IC (A) Collector Current, IC (A) 120 TC = 25 C o TC = 125 C 60 40 20 2 3 o TC = 125 C 80 60 40 20 0 4 0 6 20 8 10 12 Common Emitter o Collector−Emitter Voltage, VCE (V) Collector−Emitter Voltage, VCE (V) 4 Figure 4. Transfer Characteristics 80A 2.5 40A 2.0 IC = 20A 1.5 1.0 50 2 Gate−Emitter Voltage,VGE (V) Common Emitter VGE = 15V 0.5 25 6.0 100 T = 25oC C Figure 3. Typical Saturation Voltage Characteristics 3.0 4.5 Common Emitter VCE = 20V Collector−Emitter Voltage, VCE (V) 3.5 3.0 Figure 2. Typical Output Characteristics Common Emitter VGE = 15V 1 1.5 Collector−Emitter Voltage, VCE (V) 120 0 0 12V 60 Figure 1. Typical Output Characteristics 80 15V 80 Collector−Emitter Voltage, VCE (V) 100 20V 100 VGE = 8V 0 0.0 o TC = 125 C 12V Collector Current, IC (A) Collector Current, IC (A) TC = 25 C 75 100 125 TC = −40 C 16 12 8 80A 4 0 40A IC = 20A 4 8 12 16 20 Gate−Emitter Voltage, VGE (V) Collector−Emitter Case Temperature, TC (5C) Figure 5. Saturation Voltage vs. Case Temperature at Variant Current Level Figure 6. Saturation Voltage vs. VGE www.onsemi.com 5 FGH40N65UFDTU, FGH40N65UFDTU−F085 TYPICAL PERFORMANCE CHARACTERISTICS (Continued) 20 Common Emitter Collector−Emitter Voltage, VCE (V) Collector−Emitter Voltage, VCE (V) 20 o TC = 25 C 16 12 8 80A 4 40A IC = 20A 0 4 8 12 16 Common Emitter o TC = 125 C 16 12 8 IC = 20A 0 20 4 Gate−Emitter Voltage, VGE (V) Gate−Emitter Voltage, VGE (V) Capacitance (pF) 15 o TC = 25 C Cies 3000 Coes 2000 1000 Cres 0 0.1 1 10 12 16 20 Figure 8. Saturation Voltage vs VGE Common Emitter VGE = 0V, f = 1MHz 4000 8 Gate−Emitter Voltage, VGE(V) Figure 7. Saturation Voltage vs VGE 5000 80A 40A 4 Common Emitter o TC = 25 C 12 200V VCC = 100V 300V 9 6 3 0 30 Collector−Emitter Voltage, VCE (V) 0 50 100 150 Gate Charge, Qg(nC) Figure 9. Capacitance Characteristics Figure 10. Gate Charge Characteristics 400 200 100 ms 10 10ms Switching Time (ns) Collector Current, IC (A) 100 1ms 10 ms DC 1 *Notes: Single Nonrepetitive O Pulse TC= 25 C 0.1 100 tr td(on) o TC = 25 C Curves must be derated linearly with increase in temperature 0.01 1 10 100 Common Emitter VCC = 400V, V GE = 15V IC = 40A o TC = 125 C 10 1000 Collector−Emitter Voltage, VCE (V) 0 10 20 30 40 Gate Resistance, RG (W) Figure 11. SOA Characteristics Figure 12. Turn−on Characteristics vs. Gate Resistance www.onsemi.com 6 50 FGH40N65UFDTU, FGH40N65UFDTU−F085 TYPICAL PERFORMANCE CHARACTERISTICS (Continued) 5500 Common Emitter 500 Common Emitter VGE = 15V, R G = 10 W VCC = 400V, V GE = 15V IC = 40A 1000 o o TC = 125 C td(off) 100 10 tf 0 10 20 30 TC = 125 C Switching Time (ns) Switching Time (ns) o TC = 25 C o TC = 25 C 40 td(on) 10 20 50 40 Gate Resistance, RG (W) 10 Common Emitter VCC = 400V, V GE = 15V o IC = 40A o TC = 125 C 100 tf 40 o TC = 25 C Switching Loss (mJ) Switching Time (ns) TC = 25 C 10 20 60 1 0.3 80 Eoff 0 10 20 30 40 50 Gate Resistance, RG (W) Figure 15. Turn−off Characteristics vs. Collector Current 10 Eon o TC = 125 C Collector Current, IC (A) 20 80 Figure 14. Turn−on Characteristics vs. Collector Current Common Emitter VGE = 15V, R G = 10 W td(off) 60 Collector Current, IC (A) Figure 13. Turn−off Characteristics vs. Gate Resistance 600 tr 100 Figure 16. Switching Loss vs. Gate Resistance 200 Common Emitter VGE = 15V, R G = 10 W 100 o Eon o TC = 125 C 1 0.1 20 Collector Current, IC (A) Switching Loss (mJ) TC = 25 C Eoff 30 40 50 60 70 10 Safe Operating Area o 1 80 Collector Current, IC (A) VGE = 15V, TC = 125 C 1 10 100 1000 Collector−Emitter Voltage, VCE (V) Figure 17. Switching Loss vs. Collector Current Figure 18. Turn Off Switching SOA Characteristics www.onsemi.com 7 FGH40N65UFDTU, FGH40N65UFDTU−F085 TYPICAL PERFORMANCE CHARACTERISTICS (Continued) 200 100 80 o Reverse Current, IR (mA) Forward Current, IF (A) TJ = 125 C 10 o TJ = 25 C o TJ = 75 C 1 o TC = 25 C o TC = 125 C o TJ = 125 C 10 o TJ = 75 C 1 o TJ = 25 C 0.1 o TC = 75 C 0.1 0 1 2 3 0.01 50 4 150 Forward Voltage, VF (V) 600 Figure 20. Reverse Current 200 Reverse Recovery Time, trr (ns) 90 200A/ ms 150 100 di/dt = 100A/ ms 50 5 10 20 30 200A/ ms 30 40 di/dt = 100A/ ms 60 5 10 Forward Current, IF (A) 20 30 Figure 22. Reverse Recovery Time 1 0.5 0.1 0.01 0.2 0.1 0.05 0.02 0.01 PDM t1 single pulse 0.001 −5 10 40 Forward Current, IF (A) Figure 21. Stored Charge Thermal Response (Zthjc) Stored Recovery Charge, Qrr (nC) 450 Reverse Voltage, VR (V) Figure 19. Forward Characteristics 0 300 t2 Duty Factor, D = t1/t2 Peak Tj = Pdm x Zthjc + T C −4 10 −3 −2 10 10 −1 10 11 Rectangular Pulse Duration (sec) Figure 23. Transient Thermal Impedance of IGBT www.onsemi.com 8 0 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS TO−247−3LD SHORT LEAD CASE 340CK ISSUE A A DATE 31 JAN 2019 A E P1 P A2 D2 Q E2 S B D 1 2 D1 E1 2 3 L1 A1 L b4 c (3X) b 0.25 M (2X) b2 B A M DIM (2X) e GENERIC MARKING DIAGRAM* AYWWZZ XXXXXXX XXXXXXX XXXX = Specific Device Code A = Assembly Location Y = Year WW = Work Week ZZ = Assembly Lot Code *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “G”, may or may not be present. Some products may not follow the Generic Marking. DOCUMENT NUMBER: DESCRIPTION: 98AON13851G TO−247−3LD SHORT LEAD A A1 A2 b b2 b4 c D D1 D2 E E1 E2 e L L1 P P1 Q S MILLIMETERS MIN NOM MAX 4.58 4.70 4.82 2.20 2.40 2.60 1.40 1.50 1.60 1.17 1.26 1.35 1.53 1.65 1.77 2.42 2.54 2.66 0.51 0.61 0.71 20.32 20.57 20.82 13.08 ~ ~ 0.51 0.93 1.35 15.37 15.62 15.87 12.81 ~ ~ 4.96 5.08 5.20 ~ 5.56 ~ 15.75 16.00 16.25 3.69 3.81 3.93 3.51 3.58 3.65 6.60 6.80 7.00 5.34 5.46 5.58 5.34 5.46 5.58 Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the rights of others. © Semiconductor Components Industries, LLC, 2018 www.onsemi.com ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. 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