FGH40T65UPD

IGBT - Field Stop, Trench 650 V, 40 A FGH40T65UPD Description Using innovative field stop trench IGBT technology, ON Semiconductor’s new series of field−stop trench IGBTs offer optimum performance for solar inverter, UPS, welder, and digital power generator where low conduction and switching losses are essential. www.onsemi.com C Features • • • • • • • • • Maximum Junction Temperature: TJ = 175°C Positive Temperature Co−efficient for Easy Parallel Operating High Current Capability Low Saturation Voltage: VCE(sat) = 1.65 V(Typ.) @ IC = 40 A 100% of Parts Tested ILM (Note 2) High Input Impedance Tightened Parameter Distribution Short Circuit Ruggedness > 5 s @ 25°C This Device is Pb−Free and is RoHS Compliant G E E Applications C G TO−247−3LD CASE 340CK • Solar Inverter, UPS, Welder, Digital Power Generator • Telecom, ESS MARKING DIAGRAMS $Y&Z&3&K FGH40T65 UPD $Y &Z &3 &K FGH40T65UPD = ON Semiconductor Logo = Assembly Plant Code = Numeric Date Code = Lot Code = Specific Device Code ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 2 of this data sheet. © Semiconductor Components Industries, LLC, 2012 September, 2020 − Rev. 3 1 Publication Order Number: FGH40T65UPD/D FGH40T65UPD ABSOLUTE MAXIMUM RATINGS Description Symbol Ratings Unit Collector to Emitter Voltage VCES 650 V Gate to Emitter Voltage VGES ±20 V ±25 V 80 A 40 A ICM 120 A Transient Gate to Emitter Voltage IC Collector Current TC = 25°C Collector Current TC = 100°C Pulsed Collector Current (Note 1) Clamped Inductive Load Current (Note 2) TC = 25°C ILM 120 A Diode Forward Current TC = 25°C IF 40 A Diode Forward Current TC = 100°C 20 A Pulsed Diode Maximum Forward Current (Note 1) IFM 120 A Maximum Power Dissipation TC = 25°C PD 268 W Maximum Power Dissipation TC = 100°C 134 W Short Circuit Withstand Time TC = 25°C SCWT 5 s Operating Junction Temperature TJ −55 to +175 °C Storage Temperature Range Tstg −55 to +175 °C Maximum Lead Temp. for Soldering Purposes, 1/8” from Case for 5 Seconds TL 300 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Repetitive rating: Pulse width limited by max. junction temperature. 2. Ic = 120 A, Vce = 400 V, Rg = 15  THERMAL CHARACTERISTICS Parameter Symbol Value Unit Thermal Resistance, Junction to Case (IGBT) RJC 0.56 °C/W Thermal Resistance, Junction to Case (Diode) RJC 1.71 °C/W Thermal Resistance, Junction to Ambient RJA 40 °C/W PACKAGE MARKING AND ORDERING INFORMATION Part Number Top Mark Package Packing Method Reel Size Tape Width Quantity FGH40T65UPD FGH40T65UPD TO−247−3LD Tube N/A N/A 30 ELECTRICAL CHARACTERISTICS OF THE IGBT (TC = 25°C unless otherwise noted) Parameter Symbol Test Conditions Min Typ Max Unit 650 − − V OFF CHARACTERISTICS Collector to Emitter Breakdown Voltage BVCES VGE = 0 V, IC = 1 mA Temperature Coefficient of Breakdown Voltage BVCES / TJ VGE = 0 V, IC = 250 A Collector Cut−Off Current ICES VCE = VCES, VGE = 0 V − − 250 A G−E Leakage Current IGES VGE = VGES, VCE = 0 V − − ±400 nA G−E Threshold Voltage VGE(th) IC = 40 mA, VCE = VGE 4.0 6.0 7.5 V Collector to Emitter Saturation Voltage VCE(sat) IC = 40 A, VGE = 15 V − 1.65 2.3 V IC = 40 A, VGE = 15 V, TC = 175°C − 2.1 − V 0.65 V/°C ON CHARACTERISTICS www.onsemi.com 2 FGH40T65UPD ELECTRICAL CHARACTERISTICS OF THE IGBT (TC = 25°C unless otherwise noted) (continued) Parameter Symbol Test Conditions Min Typ Max Unit − 2730 3630 pF DYNAMIC CHARACTERISTICS VCE = 30 V, VGE = 0 V, f = 1 MHz Input Capacitance Cies Output Capacitance Coes − 82 110 pF Reverse Transfer Capacitance Cres − 48 72 pF − 20 26 ns − 26 34 ns td(off) − 144 187 ns SWITCHING CHARACTERISTICS Turn−On Delay Time Rise Time td(on) tr Turn−Off Delay Time Fall Time VCC = 400 V, IC = 40 A, RG = 7  VGE = 15 V, Inductive Load, TC = 25°C tf − 17 22 ns Turn−On Switching Loss Eon − 1.59 2.1 mJ Turn−Off Switching Loss Eoff − 0.58 0.76 mJ Total Switching Loss Ets − 2.17 2.86 mJ Turn−On Delay Time td(on) − 19 − ns − 38 − ns td(off) − 153 − ns tf − 60 − ns Turn−On Switching Loss Eon − 1.84 − mJ Turn−Off Switching Loss Eoff − 0.98 − mJ Total Switching Loss Ets − 2.82 − mJ Short Circuit Withstand Time Tsc VGE = 15 V, VCC ≤ 400 V, Rg = 10  5 − − s Total Gate Charge Qg VCE = 400 V, IC = 40 A, VGE = 15 V − 177 265 nC Gate to Emitter Charge Qge − 23 35 nC Gate to Collector Charge Qgc − 100 150 nC Rise Time tr Turn−Off Delay Time Fall Time VCC = 400 V, IC = 40 A, RG = 7  VGE = 15 V, Inductive Load, TC = 175°C ELECTRICAL CHARACTERISTICS OF THE DIODE (TC = 25°C unless otherwise noted) Parameter Diode Forward Voltage Reverse Recovery Energy Diode Reverse Recovery Time Diode Reverse Recovery Charge Symbol VFM Erec trr Test Conditions IF = 20 A IF = 20 A, diF/dt = 200 A/s Qrr Min Typ Max Unit TC = 25°C − 2.1 2.7 V TC = 175°C − 1.9 − TC = 175°C − 96 − J TC = 25°C − 33 43 ns TC = 175°C − 128 − TC = 25°C − 53 74 TC = 175°C − 341 − nC Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. www.onsemi.com 3 FGH40T65UPD TYPICAL PERFORMANCE CHARACTERISTICS 120 20 V 100 80 60 10 V 40 20 0 2 4 6 8 VCE, Collector−Emitter Voltage (V) 60 10 V 40 VGE = 8 V 0 2 8 10 VCE, Collector−Emitter Voltage (V) 4.0 80 60 40 Common Emitter VGE = 15 V TC = 25°C TC = 175°C 20 2 0 4 Common Emitter VGE = 15 V 3.5 80 A 3.0 2.5 2.0 40 A 1.5 IC = 20 A 1.0 25 6 50 VCE, Collector−Emitter Voltage (V) 20 20 VCE, Collector−Emitter Voltage (V) 16 12 40 A 80 A 4 IC = 20 A 4 8 12 16 100 125 150 175 Figure 4. Saturation Voltage vs. Case Temperature at Variant Current Level Common Emitter TC = 25°C 8 75 TC, Case Temperature (°C) Figure 3. Typical Saturation Voltage Characteristics VCE, Collector−Emitter Voltage (V) 6 Figure 2. Typical Output Characteristics 100 0 4 VCE, Collector−Emitter Voltage (V) 120 IC, Collector Current (A) 12 V 80 0 10 Figure 1. Typical Output Characteristics 0 TC = 175°C 15 V 20 VGE = 8 V 0 20 V 100 12 V IC, Collector Current (A) IC, Collector Current (A) 120 TC = 25°C 15 V 16 12 8 20 40 A 80 A 4 0 VGE, Gate−Emitter Voltage (V) Common Emitter TC = 175°C IC = 20 A 4 8 12 16 20 VGE, Gate−Emitter Voltage (V) Figure 6. Saturation Voltage vs. VGE Figure 5. Saturation Voltage vs. VGE www.onsemi.com 4 FGH40T65UPD TYPICAL PERFORMANCE CHARACTERISTICS (continued) 15 VGE, Gate−Emitter Voltage (V) Capacitance (pF) 10000 Cies 1000 Coes Common Emitter VGE = 0 V, f = 1 MHz TC = 25°C 100 30 300 V 9 VCC = 300 V 6 3 0 30 10 200 V 12 Cres 1 Common Emitter TC = 25°C 0 30 60 VCE, Collector−Emitter Voltage (V) 90 120 150 180 Qg, Gate Charge (nC) Figure 8. Gate Charge Characteristics Figure 7. Capacitance Characteristics 100 1000 td(off) Switching Time (ns) Switching Time (ns) tr td(on) Common Emitter VCC = 400 V, VGE = 15 V IC = 40 A TC = 25°C TC = 175°C 10 5 0 10 20 30 40 100 tf 10 1 50 Common Emitter VCC = 400 V, VGE = 15 V IC = 40 A TC = 25°C TC = 175°C 0 10 RG, Gate Resistance () 10 40 50 1000 Switching Time (ns) Switching Loss (mJ) 30 Figure 10. Turn−Off Characteristics vs. Gate Resistance Figure 9. Turn−On Characteristics vs. Gate Resistance Eon 1 Eoff 0.1 20 RG, Gate Resistance () Common Emitter VCC = 400 V, VGE = 15 V IC = 40 A TC = 25°C TC = 175°C 0 10 20 30 40 100 tr 10 1 50 td(on) Common Emitter RG = 7  VGE = 15 V, VCC = 400 V TC = 25°C TC = 175°C 20 30 40 50 60 70 IC, Collector Current (A) RG, Gate Resistance () Figure 11. Switching Loss vs. Gate Resistance Figure 12. Turn−On Characteristics vs. Collector Current www.onsemi.com 5 80 FGH40T65UPD TYPICAL PERFORMANCE CHARACTERISTICS (continued) 10 td(off) Switching Loss (mJ) Switching Time (ns) 1000 100 tf 10 1 20 Common Emitter VGE = 15 V, RG = 7  VCC = 400 V TC = 25°C TC = 175°C 30 40 50 60 70 Eon 1 Eoff 0.1 20 80 30 IC, Collector Current (A) IC, Collector Current (A) IC, Collector Current (A) TC = 100°C Duty Cycle: 50% TC = 100°C Power Dissipation = 134 W 0 1k 10k 100k IcMAX (Continuous) 10 Single Nonrepetitive Pulse TC = 25°C Curves must be derated linearly with increase in temperature. 0.1 100 1000 6 Irr, Reverse Recovery Current (A) IF, Forward Current (A) 10 Figure 16. SOA Characteristics 10 TC = 75°C TC = 25°C 1 1 VCE, Collector−Emitter Voltage (V) TC = 25°C TC = 75°C TC = 175°C 0 10 s 100 s 10 ms 1 ms 1 0.01 0.1 1M TC = 175°C 1 80 DC Operation Figure 15. Load Current vs. Frequency 100 70 IcMAX (Pulsed) 100 f, Switching Frequency (Hz) 200 60 1000 120 40 50 Figure 14. Switching Loss vs. Collector Current VCC = 400 V Load Current: Peak of Square Wave 80 40 IC, Collector Current (A) Figure 13. Turn−Off Characteristics vs. Collector Current 160 Common Emitter VGE = 15 V, RG = 7  TC = 25°C TC = 175°C 2 3 4 200 A/s 4 200 A/s diF/dt = 100 A/s 2 diF/dt = 100 A/s 0 5 VF, Forward Voltage (V) TC = 25°C TC = 175°C 0 9 18 27 36 45 IF, Forward Current (A) Figure 18. Reverse Recovery Current Figure 17. Forward Characteristics www.onsemi.com 6 FGH40T65UPD TYPICAL PERFORMANCE CHARACTERISTICS (continued) 400 Qrr, Stored Recovery Charge (nC) 200 A/s diF/dt = 100 A/s 100 TC = 25°C TC = 175°C 200 A/s 50 diF/dt = 100 A/s 5 10 15 20 25 30 35 200 A/s 300 diF/dt = 100 A/s 200 TC = 25°C TC = 175°C 100 0 40 200 A/s diF/dt = 100 A/s 5 10 15 20 25 30 35 IF, Forward Current (A) IF, Forward Current (A) Figure 19. Reverse Recovery Time Figure 20. Stored Charge 1 Thermal Response (Zjc) 0 0.5 0.2 0.1 0.05 0.02 0.01 0.01 Single Pulse 0.1 1E−3 1E−5 PDM t1 t2 Duty Factor, D = t1/t2 Peak Tj = Pdm x Zjc + TC 1E−4 1E−3 0.01 0.1 Rectangular Pulse Duration (sec) Figure 21. Transient Thermal Impedance of IGBT 3 Thermal Response (Zjc) trr, Reverse Recovery Time (ns) 150 1 0.5 0.2 0.1 0.1 0.05 0.02 0.01 PDM t1 t2 Duty Factor, D = t1/t2 Peak Tj = Pdm x Zjc + TC Single Pulse 0.01 1E−5 1E−4 1E−3 0.01 0.1 Rectangular Pulse Duration (sec) Figure 22. Transient Thermal Impedance of Diode www.onsemi.com 7 1 40 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS TO−247−3LD SHORT LEAD CASE 340CK ISSUE A A DATE 31 JAN 2019 A E P1 P A2 D2 Q E2 S B D 1 2 D1 E1 2 3 L1 A1 L b4 c (3X) b 0.25 M (2X) b2 B A M DIM (2X) e GENERIC MARKING DIAGRAM* AYWWZZ XXXXXXX XXXXXXX XXXX = Specific Device Code A = Assembly Location Y = Year WW = Work Week ZZ = Assembly Lot Code *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “G”, may or may not be present. Some products may not follow the Generic Marking. DOCUMENT NUMBER: DESCRIPTION: 98AON13851G TO−247−3LD SHORT LEAD A A1 A2 b b2 b4 c D D1 D2 E E1 E2 e L L1 P P1 Q S MILLIMETERS MIN NOM MAX 4.58 4.70 4.82 2.20 2.40 2.60 1.40 1.50 1.60 1.17 1.26 1.35 1.53 1.65 1.77 2.42 2.54 2.66 0.51 0.61 0.71 20.32 20.57 20.82 13.08 ~ ~ 0.51 0.93 1.35 15.37 15.62 15.87 12.81 ~ ~ 4.96 5.08 5.20 ~ 5.56 ~ 15.75 16.00 16.25 3.69 3.81 3.93 3.51 3.58 3.65 6.60 6.80 7.00 5.34 5.46 5.58 5.34 5.46 5.58 Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. 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