FGH75T65UPD

IGBT - Field Stop, Trench 650 V, 75 A FGH75T65UPD-F085 Description U s i n g N o v e l F i e l d S t o p Tr e n c h I G B T Te c h n o l o g y, ON Semiconductor’s new series of Field Stop Trench IGBTs offer the optimum performance for Automotive chargers, Solar Inverter, UPS and Digital Power Generator where low conduction and switching losses are essential. www.onsemi.com C Features • • • • • • • • Maximum Junction Temperature : TJ = 175°C Positive Temperature Co−efficient for Easy Parallel Operating High Current Capability Low Saturation Voltage: VCE(sat) = 1.65 V (Typ.) @ IC = 75 A High Input Impedance Tightened Parameter Distribution AEC−Q101Qualified and PPAP Capable This Device is Pb−Free and is RoHS Compliant G E E C G Applications • Automotive Chargers, Converters, High Voltage Auxiliaries • Solar Inverters, UPS, Digital Power Generator COLLECTOR (FLANGE) TO−247−3LD CASE 340CK MARKING DIAGRAM $Y&Z&3&K FGH75T65 UPD $Y &Z &3 &K FGH75T65UPD = ON Semiconductor Logo = Assembly Plant Code = Numeric Date Code = Lot Code = Specific Device Code ORDERING INFORMATION See detailed ordering and shipping information on page 2 of this data sheet. © Semiconductor Components Industries, LLC, 2013 February, 2020 − Rev. 4 1 Publication Order Number: FGH75T65UPD−F085/D FGH75T65UPD−F085 ABSOLUTE MAXIMUM RATINGS Description Symbol Ratings Unit Collector to Emitter Voltage VCES 650 V Gate to Emitter Voltage VGES ±20 V IC 150 A 75 A ICM (Note 1) 225 A IF 75 A 50 A IFM (Note 1) 225 A PD 375 W Collector Current TC = 25°C TC = 100°C Pulsed Collector Current Diode Forward Current TC = 25°C TC = 100°C Pulsed Diode Maximum Forward Current Maximum Power Dissipation TC = 25°C TC = 100°C 187 W SCWT 5 s Operating Junction Temperature TJ −55 to +175 °C Storage Temperature Range Tstg −55 to +175 °C Maximum Lead Temperature for Soldering, 1/8″ from Case for 5 Seconds TL 300 °C Short Circuit Withstand Time TC = 25°C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Repetitive rating: Pulse width limited by max. junction temperature. THERMAL CHARACTERISTICS Parameter Symbol Ratings Unit Thermal Resistance, Junction−to−Case RJC (IGBT) (Note 2) 0.4 °C/W Thermal Resistance, Junction−to−Case RJC (Diode) 0.86 °C/W Symbol Typ RJA 40 Parameter Thermal Resistance, Junction−to−Ambient (PCB Mount) (Note 2) °C/W PACKAGE MARKING AND ORDERING INFORMATION Part Number Top Mark Package Package Method Reel Size Tape Width Quantity FGH75T65UPD−F085 FGH75T65UPD TO−247 Tube − − 30 ELECTRICAL CHARACTERISTICS OF THE IGBT (TC = 25°C unless otherwise noted) Parameter Symbol Test Conditions Min Typ Max Unit OFF CHARACTERISTICS Collector to Emitter Breakdown Voltage BVCES VGE = 0 V, IC = 1 mA 650 − − V Temperature Coefficient of Breakdown Voltage BVCES/ TJ VGE = 0 V, IC = 1 mA − 0.65 − V/°C VCE = VCES, VGE = 0 V − − 250 A Collector Cut−Off Current ICES ICES at 80% * BVCES, 175°C − − 3600 G−E Leakage Current IGES VGE = VGES, VCE = 0 V − − ±400 nA G−E Threshold Voltage VGE(th) IC = 75 mA, VCE = VGE 4.0 6.0 7.5 V Collector to Emitter Saturation Voltage VCE(sat) IC = 75 A, VGE = 15 V − 1.69 2.3 V IC = 75 A, VGE = 15 V, TC = 175°C − 2.21 − V ON CHARACTERISTICs www.onsemi.com 2 FGH75T65UPD−F085 ELECTRICAL CHARACTERISTICS OF THE IGBT (TC = 25°C unless otherwise noted) (continued) Parameter Symbol Test Conditions Min Typ Max Unit − 5665 − pF DYNAMIC CHARACTERISTICS VCE = 30 V, VGE = 0 V, f = 1 MHz Input Capacitance Cies Output Capacitance Coes − 205 − pF Reverse Transfer Capacitance Cres − 100 − pF − 32 48 ns − 43 71 ns td(off) − 166 216 ns SWITCHING CHARACTERISTICS Turn−On Delay Time VCC = 400 V, IC = 75 A, RG = 3  VGE = 15 V, Inductive Load, TC = 25°C td(on) Rise Time tr Turn−Off Delay Time Fall Time tf − 24 33 ns Turn−On Switching Loss Eon − 2.85 4.80 mJ Turn−Off Switching Loss Eoff − 1.20 1.60 mJ Total Switching Loss Ets − 4.05 5.30 mJ Turn−On Delay Time td(on) − 30 − ns − 57 − ns td(off) − 176 − ns tf − 21 − ns Turn−On Switching Loss Eon − 4.45 − mJ Turn−Off Switching Loss Eoff − 1.60 − mJ Total Switching Loss Ets − 6.05 − mJ Short Circuit Withstand Time Tsc VGE = 15 V, VCC ≤ 400V, RG = 10  5 − − s Total Gate Charge Qg VCE = 400 V, IC = 75 A, VGE = 15 V − 385 578 nC Gate to Emitter Charge Qge − 45 68 nC Gate to Collector Charge Qgc − 210 315 nC Rise Time VCC = 400 V, IC = 75 A, RG = 3  VGE = 15 V, Inductive Load, TC = 175°C tr Turn−Off Delay Time Fall Time ELECTRICAL CHARACTERISTICS OF THE DIODE (TJ = 25°C unless otherwise noted) Parametr Diode Forward Voltage Reverse Recovery Energy Diode Reverse Recovery Time Diode Reverse Recovery Charge Symbol VFM Erec Test Conditions IF = 50 A IF = 50 A, dIF/dt = 200 A/s trr Qrr Min Typ Max Unit TC = 25°C − 2.1 2.6 V TC = 175°C − 1.7 − TC = 175°C − 40 − J TC = 25°C − 43 85 ns TC = 175°C − 162 − TC = 25°C − 83 170 TC = 175°C − 805 − nC Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 2. Rjc for TO−247 : according to Mil standard 883−1012 test method. Rja for TO−247 : according to JESD51−2, test method environmental condition and JESD51−10, test boards for through hole perimeter leaded package thermal measurements. JESD51−3 : Low Effective Thermal Conductivity Test Board for Leaded Surface Mount Package. www.onsemi.com 3 FGH75T65UPD−F085 TYPICAL PERFORMANCE CHARACTERISTICS VGE = 20 V 225 15V VGE = 20 V 12 V 180 Collector Current, IC [A] Collector Current, IC [A] 225 135 90 10 V 45 0 2 4 12 V 135 90 10 V 45 8V 6 8 0 10 0 Collector−Emitter Voltage, VCE [V] Figure 1. Typical Output Characteristics 175 Collector Current, IC [A] Collector Current, IC [A] 4 6 8 2 Collector−Emitter Voltage, VCE {V] 10 225 Common Emitter VCE = 400 V TC = 25°C TC = 175°C 200 150 125 100 75 Common Emitter VGE = 15 V TC = 25°C TC = 175°C 50 25 1 0 2 3 4 180 135 90 45 0 5 0 Collector−Emitter Voltage, VCE [V] 4 20 Collector−Emitter Voltage, VCE [V] Common Emitter VGE = 15 V 150 A 3 75 A 2 1 25 IC = 40 A 50 75 6 3 9 12 Gate−Emitter Voltage, VGE [V] 100 125 150 15 Figure 4. Transfer Characteristics Figure 3. Typical Saturation Voltage Characteristics Collector−Emitter Voltage, VCE [V] TC = 175°C Figure 2. Typical Output Characteristics 225 0 15 V TC = 25°C 8V 0 180 16 Collector−Emitter Case Temperature, TC [°C] 150 A 12 75 A 8 IC = 40 A 4 0 175 Common Emitter TC = −40°C 4 16 12 8 Gate−Emitter Voltage, VGE [V] Figure 6. Saturation Voltage vs. VGE Figure 5. Saturation Voltage vs. Case Temperature at Variant Current Level www.onsemi.com 4 20 FGH75T65UPD−F085 TYPICAL PERFORMANCE CHARACTERISTICS (continued) 20 Common Emitter TC = 25°C Collector−Emitter Voltage, VCE [V] Collector−Emitter Voltage, VCE [V] 20 16 150 A 12 75 A 8 4 0 IC = 40 A 4 12 8 16 Gate−Emitter Voltage, VGE [V] 16 150 A 12 75 A 8 4 IC = 40 A 0 20 Common Emitter TC = 175°C 10000 15 Gate−Emitter Voltage, VGE [V] Capacitance [pF] Cies 1000 Coes Common Emitter VGE = 0 V, f = 1 MHz TC = 25°C 100 Cres 9 VCC = 300 V 6 3 Common Emitter TC = 25°C 0 70 1000 500 Common Emitter VCC = 400 V, VGE = 15 V IC = 75 A TC = 25°C TC = 175°C 100 100 s Switching Time [ns] Collector Current, IC [A] 10 s 1 ms 10 ms 1 *Notes: 1. TC = 25°C 2. TJ ≤ 175°C 3. Single Pulse 1 10 DC 100 210 280 350 140 Gate Charge, Qg [nC] 420 Figure 10. Gate Charge Characteristics Figure 9. Capacitance Characteristics 10 400 V 200 V 0 30 10 1 12 Collector−Emitter Voltage, VCE [V] 0.1 20 Figure 8. Saturation Voltage vs. VGE Figure 7. Saturation Voltage vs. VGE 50 8 16 12 Gate−Emitter Voltage, VGE [V] 4 100 10 500 Collector−Emitter Voltage, VCE [V] td(on) tr 0 10 40 20 30 Gate Resistance, RG [] Figure 12. Turn−on Characteristics vs. Gate Resistance Figure 11. SOA Characteristics www.onsemi.com 5 50 FGH75T65UPD−F085 TYPICAL PERFORMANCE CHARACTERISTICS (continued) 500 td(off) 1000 Switching Time [ns] Switching Time [ns] 5000 tf 100 10 Common Emitter VCC = 400 V, VGE = 15 V IC = 75 A TC = 25°C TC = 175°C 0 10 40 20 30 Gate Resistance, RG [] 100 tr td(on) 10 Common Emitter VGE = 15 V, RG = 3  TC = 25°C TC = 175°C 1 50 0 100 1000 Switching Loss [mJ] Switching Time [ns] 100 tf Common Emitter VGE = 15 V, RG = 3  TC = 25°C TC = 175°C 30 60 90 120 Collector Current, IC [A] Eon 10 Eoff 1 150 0 50 40 20 30 Gate Resistance, RG [] 50 250 Collector Current , IC [A] Switching Loss [mJ] 10 Figure 16. Switching Loss vs. Gate Resistance Figure 15. Turn−off Characteristics vs. Collector Current 10 Eon 1 Eoff 0.1 150 Common Emitter VCC = 400 V, VGE = 15 V IC = 75 A TC = 25°C TC = 175°C td(off) 1 0 60 90 120 Collector Current, IC [A] Figure 14. Turn−on Characteristics vs. Collector Current Figure 13. Turn−off Characteristics vs. Gate Resistance 10 30 0 30 Common Emitter VGE = 15 V, RG = 3  TC = 25°C TC = 175°C 60 90 120 Collector Current, IC [A] 200 150 100 150 50 Safe Operating Area VGE = 15 V, TC ≤ 175°C 0 Figure 17. Switching Loss vs. Collector Current 100 200 300 400 500 600 Collector−Emitter Voltage, VCE [V] 700 Figure 18. Turn−off Switching SOA Characteristics www.onsemi.com 6 FGH75T65UPD−F085 180 180 150 150 Collector Current, IC [A] Average Forward Current, IF(AV) [A] TYPICAL PERFORMANCE CHARACTERISTICS (continued) 120 90 60 0 25 50 75 90 60 0 100 125 150 175 200 Case Temperature, TC [°C] Reverse Current, Irr [A] Forward Current, IF [A] 15 100 TC = 175°C TC = 125°C TC = 75°C 1 0 12 di/dt = 200 A/s 9 100 A/s 6 di/dt = 200 A/s 3 100 A/s TC = 25°C 0 4 1 2 3 Forward Voltage, VF [V] 0 250 200 A/s di/dt = 100 A/s 0.4 200 A/s 0.2 0.0 di/dt = 100 A/s 0 20 40 60 Forward Current, IF [A] 20 40 IC [A] 60 80 Figure 22. Reverse Recovery Time Reverse Recovery Time, trr [ns] Stored Recovery Charge, Qrr [C] 0.6 TC = 25°C TC = 175°C 1M 100k TC = 25°C TC = 175°C Figure 21. Forward Characteristics 0.8 10k 1k Figure 20. Load Current vs. Frequence 300 1.0 Duty Cycle: 50% TC = 100°C Power Dissipation = 187 W Switching Frequency, f [Hz] Figure 19. Current Derating 10 VCC = 400 V Load Current: Peak of square wave 120 30 30 0 TC = 100°C TC = 25°C TC = 175°C 200 150 200 A/s di/dt = 100 A/s 100 di/dt = 100 A/s 0 80 200 A/s 50 0 40 60 20 Forward Current, IF [A] Figure 24. Reverse Recovery Time Figure 23. Stored Charge www.onsemi.com 7 80 FGH75T65UPD−F085 TYPICAL PERFORMANCE CHARACTERISTICS (continued) Thermal Response [Zjc] 0.5 0.5 0.1 0.2 0.1 0.05 0.02 0.01 0.01 Single Pulse PDM t1 t2 Duty Factor, D = t1/t2 Peak TJ = Pdm x Zjc + TC 1E−3 1E−5 1E−4 0.01 1E−3 Rectangular Pulse Duration [sec] 0.1 Figure 25. Transient Thermal Impedance of IGBT Thermal Response [Zjc] 1 0.5 0.2 0.1 0.05 0.02 0.01 0.01 Single Pulse 0.1 1E−3 1E−5 PDM t1 t2 Duty Factor, D = t1/t2 Peak Tj = Pdm x Zjc + TC 1E−4 1E−3 0.01 Rectangular Pulse Duration [sec] 0.1 Figure 26. Transient Thermal Impedance of Diode www.onsemi.com 8 1 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS TO−247−3LD SHORT LEAD CASE 340CK ISSUE A A DATE 31 JAN 2019 A E P1 P A2 D2 Q E2 S B D 1 2 D1 E1 2 3 L1 A1 L b4 c (3X) b 0.25 M (2X) b2 B A M DIM (2X) e GENERIC MARKING DIAGRAM* AYWWZZ XXXXXXX XXXXXXX XXXX = Specific Device Code A = Assembly Location Y = Year WW = Work Week ZZ = Assembly Lot Code *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “G”, may or may not be present. Some products may not follow the Generic Marking. DOCUMENT NUMBER: DESCRIPTION: 98AON13851G TO−247−3LD SHORT LEAD A A1 A2 b b2 b4 c D D1 D2 E E1 E2 e L L1 P P1 Q S MILLIMETERS MIN NOM MAX 4.58 4.70 4.82 2.20 2.40 2.60 1.40 1.50 1.60 1.17 1.26 1.35 1.53 1.65 1.77 2.42 2.54 2.66 0.51 0.61 0.71 20.32 20.57 20.82 13.08 ~ ~ 0.51 0.93 1.35 15.37 15.62 15.87 12.81 ~ ~ 4.96 5.08 5.20 ~ 5.56 ~ 15.75 16.00 16.25 3.69 3.81 3.93 3.51 3.58 3.65 6.60 6.80 7.00 5.34 5.46 5.58 5.34 5.46 5.58 Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. 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