FGH75T65UPD-F155

IGBT - Field Stop, Trench 650 V, 75 A FGH75T65UPD, FGH75T65UPD-F155 Description Using innovative field stop trench IGBT technology, ON Semiconductor’s new series of field−stop trench IGBTs offer optimum performance for solar inverter, UPS, welder, and digital power genera−tor where low conduction and switching losses are essential. Features • • • • • • • • • Maximum Junction Temperature: TJ = 175°C Positive Temperature Co−efficient for Easy Parallel Operating High Current Capability Low Saturation Voltage: VCE(sat) = 1.65 V(Typ.) @ IC = 75 A 100% of Parts Tested ILM High Input Impedance Tightened Parameter Distribution Short Circuit Ruggedness > 5 s @ 25°C These Devices are Pb−Free and are RoHS Compliant Applications www.onsemi.com C G E E C G TO−247−3LD CASE 340CK TO−247−3LD CASE 340CH FGH75T65UPD FGH75T65UPD−F155 • Solar Inverter, UPS, Digital Power Generator MARKING DIAGRAMS $Y&Z&3&K FGH75T65 UPD $Y &Z &3 &K FGH75T65UPD = ON Semiconductor Logo = Assembly Plant Code = Numeric Date Code = Lot Code = Specific Device Code ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 2 of this data sheet. © Semiconductor Components Industries, LLC, 2015 April, 2020 − Rev. 3 1 Publication Order Number: FGH75T65UPD/D FGH75T65UPD, FGH75T65UPD−F155 ABSOLUTE MAXIMUM RATINGS Description Symbol Ratings Unit Collector to Emitter Voltage VCES 650 V Gate to Emitter Voltage VGES ±20 V ±25 V 150 A 75 A ICM 225 A Transient Gate to Emitter Voltage IC Collector Current TC = 25°C Collector Current TC = 100°C Pulsed Collector Current (Note 1) Clamped Inductive Load Current (Note 2) TC = 25°C ILM 225 A Diode Forward Current TC = 25°C IF 75 A Diode Forward Current TC = 100°C 50 A Pulsed Diode Maximum Forward Current (Note 1) IFM 225 A Maximum Power Dissipation TC = 25°C PD 375 W Maximum Power Dissipation TC = 100°C 187 W Short Circuit Withstand Time TC = 25°C SCWT 5 s Operating Junction Temperature TJ −55 to +175 °C Storage Temperature Range Tstg −55 to +175 °C Maximum Lead Temp. for Soldering Purposes, 1/8” from Case for 5 Seconds TL 300 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Repetitive rating: Pulse width limited by max. junction temperature. 2. Ic = 225 A, Vce = 400 V, Rg = 10  THERMAL CHARACTERISTICS Parameter Symbol Typ Max Unit Thermal Resistance, Junction to Case RJC(IGBT) − 0.40 °C/W Thermal Resistance, Junction to Case RJC(Diode) − 0.86 °C/W RJA − 40 °C/W Thermal Resistance, Junction to Ambient PACKAGE MARKING AND ORDERING INFORMATION Part Number Top Mark Package Packing Method Reel Size Tape Width Quantity FGH75T65UPD FGH75T65UPD TO−247−3 Tube N/A N/A 30 FGH75T65UPD−F155 FGH75T65UPD TO−247−3 Tube N/A N/A 30 ELECTRICAL CHARACTERISTICS OF THE IGBT (TC = 25°C unless otherwise noted) Parameter Symbol Test Conditions Min Typ Max − − Unit Off Characteristics Collector to Emitter Breakdown Voltage BVCES Temperature Coefficient of Breakdown Voltage BVCES/TJ VGE = 0 V, IC = 1 mA VGE = 0 V, IC = 250 A 650 Collector Cut−Off Current ICES VCE = VCES, VGE = 0 V − − 250 A G−E Leakage Current IGES VGE = VGES, VCE = 0 V − − ±400 nA G−E Threshold Voltage VGE(th) IC = 75 mA, VCE = VGE 4.0 6.0 7.5 V Collector to Emitter Saturation Voltage VCE(sat) IC = 75 A, VGE = 15 V − 1.65 2.3 V IC = 75 A, VGE = 15 V, TC = 175°C − 2.05 − V 0.65 V V/°C On Characteristics www.onsemi.com 2 FGH75T65UPD, FGH75T65UPD−F155 ELECTRICAL CHARACTERISTICS OF THE IGBT (TC = 25°C unless otherwise noted) (continued) Parameter Symbol Test Conditions Min Typ Max Unit − 5665 − pF Dynamic Characteristics VCE = 30 V, VGE = 0 V, f = 1 MHz Input Capacitance Cies Output Capacitance Coes − 205 − pF Reverse Transfer Capacitance Cres − 100 − pF − 32 42 ns − 43 56 ns td(off) − 166 216 ns Switching Characteristics Turn−On Delay Time Rise Time td(on) tr Turn−Off Delay Time Fall Time VCC = 400 V, IC = 75 A, RG = 3  VGE = 15 V, Inductive Load, TC = 25°C tf − 24 33 ns Turn−On Switching Loss Eon − 2.85 3.68 mJ Turn−Off Switching Loss Eoff − 1.20 1.60 mJ Total Switching Loss Ets − 4.05 5.3 mJ Turn−On Delay Time td(on) − 30 − ns − 57 − ns td(off) − 176 − ns tf − 21 − ns Turn−On Switching Loss Eon − 4.45 − mJ Turn−Off Switching Loss Eoff − 1.60 − mJ Total Switching Loss Ets − 6.05 − mJ Short Circuit Withstand Time Tsc VGE = 15 V, VCC ≤ 400 V, Rg = 10  5 − − s Total Gate Charge Qg VCE = 400 V, IC = 75 A, VGE = 15 V − 385 578 nC Gate to Emitter Charge Qge − 45 68 nC Gate to Collector Charge Qgc − 210 315 nC Rise Time tr Turn−Off Delay Time Fall Time VCC = 400 V, IC = 75 A, RG = 3  VGE = 15 V, Inductive Load, TC = 175°C ELECTRICAL CHARACTERISTICS OF THE DIODE (TC = 25°C unless otherwise noted) Parameter Diode Forward Voltage Reverse Recovery Energy Diode Reverse Recovery Time Diode Reverse Recovery Charge Symbol VFM Erec trr Test Conditions IF = 50 A IF = 50 A, diF/dt = 200 A/s Qrr Min Typ Max Unit TC = 25°C − 2.1 2.6 V TC = 175°C − 1.7 − TC = 175°C − 40 − J TC = 25°C − 65 85 ns TC = 175°C − 127 − TC = 25°C − 120 170 TC = 175°C − 550 − nC Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. www.onsemi.com 3 FGH75T65UPD, FGH75T65UPD−F155 TYPICAL PERFORMANCE CHARACTERISTICS VGE = 20 V 225 15 V 12 V 180 IC, Collector Current (A) IC, Collector Current (A) 225 135 90 10 V 45 0 8V 0 12 V 135 90 8V 0 10 4 6 8 10 3.5 VCE, Collector−Emitter Voltage (V) IC, Collector Current (A) 2 Figure 2. Typical Output Characteristics 200 175 150 125 100 75 Common Emitter VGE = 15 V TC = 25°C TC = 175°C 50 25 0 1 2 3 4 VCE, Collector−Emitter Voltage (V) 20 5 IC = 40 A 8 12 16 75 A 1.5 IC = 40 A VCE, Collector−Emitter Voltage (V) 8 4 2.0 50 75 100 125 20 75 A 4 150 A 2.5 150 175 TC, Case Temperature (°C) 150 A 12 3.0 Figure 4. Saturation Voltage vs. Case Temperature at Variant Current Level Common Emitter TC = 25°C 16 Common Emitter VGE = 15 V 1.0 25 Figure 3. Typical Saturation Voltage Characteristics VCE, Collector−Emitter Voltage (V) 0 TC = 175°C VCE, Collector−Emitter Voltage (V) 225 0 10 V 45 Figure 1. Typical Output Characteristics 0 15 V 180 TC = 25°C 2 4 6 8 VCE, Collector−Emitter Voltage (V) VGE = 20 V 16 150 A 12 75 A 8 4 0 20 Common Emitter TC = 175°C IC = 40 A 4 8 12 16 20 VGE, Gate−Emitter Voltage (V) VGE, Gate−Emitter Voltage (V) Figure 6. Saturation Voltage vs. VGE Figure 5. Saturation Voltage vs. VGE www.onsemi.com 4 FGH75T65UPD, FGH75T65UPD−F155 TYPICAL PERFORMANCE CHARACTERISTICS (continued) 10000 15 VGE, Gate−Emitter Voltage (V) Capacitance (pF) Cies 1000 Coes Common Emitter VGE = 0 V, f = 1 MHz TC = 25°C 100 50 Cres 1 12 9 VCC = 300 V 6 3 0 30 10 Common Emitter TC = 25°C 0 70 VCE, Collector−Emitter Voltage (V) Switching Time (ns) Switching Time (ns) 280 350 420 5000 Common Emitter VCC = 400 V, VGE = 15 V IC = 75 A TC = 25°C TC = 175°C td(on) 100 tr 0 10 20 30 40 td(off) 1000 tf 100 Common Emitter VCC = 400 V, VGE = 15 V IC = 75 A TC = 25°C TC = 175°C 10 50 0 10 RG, Gate Resistance () 20 30 40 50 RG, Gate Resistance () Figure 10. Turn−Off Characteristics vs. Gate Resistance Figure 9. Turn−On Characteristics vs. Gate Resistance 500 100 Common Emitter VCC = 400 V, VGE = 15 V IC = 75 A TC = 25°C TC = 175°C Switching Time (ns) Switching Loss (mJ) 210 Qg, Gate Charge (nC) 1000 Eon 10 Eoff 1 140 Figure 8. Gate Charge Characteristics Figure 7. Capacitance Characteristics 10 400 V 200 V 0 10 20 30 40 100 td(on) 10 Common Emitter VGE = 15 V, RG = 3  TC = 25°C TC = 175°C 1 50 tr 0 30 60 90 120 150 IC, Collector Current (A) RG, Gate Resistance () Figure 11. Switching Loss vs. Gate Resistance Figure 12. Turn−On Characteristics vs. Collector Current www.onsemi.com 5 FGH75T65UPD, FGH75T65UPD−F155 TYPICAL PERFORMANCE CHARACTERISTICS (continued) 50 100 td(off) 10 tf Switching Loss (mJ) Switching Time (ns) 1000 Common Emitter VGE = 15 V, RG = 3  TC = 25°C TC = 175°C 1 0.1 0 30 90 60 120 10 Eon 1 0.1 150 0 30 IC, Collector Current (A) 120 90 Duty Cycle: 50% TC = 100°C Power Dissipation = 187 W 60 VCC = 400 V Load Current: Peak of Square Wave 0 1k 10k 100k 10 s IcMAX (Continuous) DC Operation Single Nonrepetitive Pulse TC = 25°C Curves must be derated linearly with increase in temperature. 1 0.1 1M 1 10 Irr, Reverse Recovery Current (A) TC = 175°C TC = 125°C TC = 75°C TC = 25°C 2 3 1000 Figure 16. SOA Characteristics 11 1 100 VCE, Collector−Emitter Voltage (V) 300 0 10 ms 1 ms 10 Figure 15. Load Current vs. Frequency 10 150 100 s f, Switching Frequency (Hz) 100 120 IcMAX (Pulsed) 100 IC, Collector Current (A) IC, Collector Current (A) 500 TC = 100°C 30 IF, Forward Current (A) 90 Figure 14. Switching Loss vs. Collector Current 150 1 60 IC, Collector Current (A) Figure 13. Turn−Off Characteristics vs. Collector Current 180 Common Emitter VGE = 15 V, RG = 3  TC = 25°C TC = 175°C Eoff TC = 25°C TC = 175°C 10 diF/dt = 200 A/s 8 6 100 A/s 4 diF/dt = 200 A/s 2 100 A/s 0 4 0 VF, Forward Voltage (V) 10 20 30 40 50 60 70 80 IF, Forward Current (A) Figure 18. Reverse Recovery Current Figure 17. Forward Characteristics www.onsemi.com 6 FGH75T65UPD, FGH75T65UPD−F155 TYPICAL PERFORMANCE CHARACTERISTICS (continued) 0.7 160 Qrr, Stored Recovery Charge (C) TC = 25°C TC = 175°C diF/dt = 100 A/s 200 A/s 120 diF/dt = 100 A/s 80 200 A/s 0 20 40 200 A/s 0.5 0.4 diF/dt = 100 A/s 0.3 0.2 200 A/s 0.1 0.0 80 60 TC = 25°C TC = 175°C 0.6 diF/dt = 100 A/s 0 20 40 60 IF, Forward Current (A) IF, Forward Current (A) Figure 19. Reverse Recovery Time Figure 20. Stored Charge 0.5 Thermal Response (Zjc) 40 0.5 0.1 0.01 0.2 0.1 0.05 0.02 0.01 PDM Single Pulse 1E−3 1E−5 t1 t2 Duty Factor, D = t1/t2 Peak Tj = Pdm x Zjc + TC 1E−4 1E−3 0.01 0.1 Rectangular Pulse Duration (sec) Figure 21. Transient Thermal Impedance of IGBT 2 1 Thermal Response (Zjc) trr, Reverse Recovery Time (ns) 200 0.1 0.01 0.5 0.2 0.1 0.05 0.02 0.01 Single Pulse 1E−3 1E−5 1E−4 PDM t1 t2 Duty Factor, D = t1/t2 Peak Tj = Pdm x Zjc + TC 1E−3 0.01 0.1 Rectangular Pulse Duration (sec) Figure 22. Transient Thermal Impedance of Diode www.onsemi.com 7 1 80 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS TO−247−3LD CASE 340CH ISSUE A DATE 09 OCT 2019 GENERIC MARKING DIAGRAM* XXXXXXXXX AYWWG XXXX A Y WW G = Specific Device Code = Assembly Location = Year = Work Week = Pb−Free Package *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “G”, may or may not be present. Some products may not follow the Generic Marking. DOCUMENT NUMBER: DESCRIPTION: 98AON13853G TO−247−3LD Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the rights of others. © Semiconductor Components Industries, LLC, 2018 www.onsemi.com MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS TO−247−3LD SHORT LEAD CASE 340CK ISSUE A A DATE 31 JAN 2019 A E P1 P A2 D2 Q E2 S B D 1 2 D1 E1 2 3 L1 A1 L b4 c (3X) b 0.25 M (2X) b2 B A M DIM (2X) e GENERIC MARKING DIAGRAM* AYWWZZ XXXXXXX XXXXXXX XXXX = Specific Device Code A = Assembly Location Y = Year WW = Work Week ZZ = Assembly Lot Code *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “G”, may or may not be present. Some products may not follow the Generic Marking. DOCUMENT NUMBER: DESCRIPTION: 98AON13851G TO−247−3LD SHORT LEAD A A1 A2 b b2 b4 c D D1 D2 E E1 E2 e L L1 P P1 Q S MILLIMETERS MIN NOM MAX 4.58 4.70 4.82 2.20 2.40 2.60 1.40 1.50 1.60 1.17 1.26 1.35 1.53 1.65 1.77 2.42 2.54 2.66 0.51 0.61 0.71 20.32 20.57 20.82 13.08 ~ ~ 0.51 0.93 1.35 15.37 15.62 15.87 12.81 ~ ~ 4.96 5.08 5.20 ~ 5.56 ~ 15.75 16.00 16.25 3.69 3.81 3.93 3.51 3.58 3.65 6.60 6.80 7.00 5.34 5.46 5.58 5.34 5.46 5.58 Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the rights of others. © Semiconductor Components Industries, LLC, 2018 www.onsemi.com ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. 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