FGB20N60SFD_F085

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Other names and brands may be claimed as the property of others. 600V, 20A Field Stop IGBT General Description Features Using novel field-stop IGBT t echnology, ON Semiconductor’s new series of field-stop IGBTs offers the optimum performance for automotive chargers, inverters, and other applications where low conduction and switching losses are essential. • High current capability • Low saturation voltage: VCE(sat) = 2.2V @ IC = 20A • High input impedance • Fast switching • Qualified to Automotive Requirements of AEC-Q101 • RoHS complaint Applications • Inverters, SMPS, PFC, UPS • Automotive Auxiliaries Chargers, Converters, High Voltage C C D2-PAK G G E E Absolute Maximum Ratings Symbol Description Ratings Units VCES Collector to Emitter Voltage 600 V VGES Gate to Emitter Voltage ± 20 V 40 A 20 A o 60 A o IC ICM (1) IF 25oC Collector Current @ TC = Collector Current @ TC = 100oC Pulsed Collector Current @ TC = 25 C Diode Forward Current @ TC = 25 C 20 A Diode Forward Current @ TC = 100oC 10 A 60 A Maximum Power Dissipation @ TC = 25oC 208 W Maximum Power Dissipation @ TC = 100oC Pulsed Diode Maximum Forward Current IFM(1) PD Operating Junction Temperature TJ Tstg Storage Temperature Range TL Maximum Lead Temp. for soldering Purposes, 1/8” from case for 5 seconds 83 W -55 to +150 o C -55 to +150 o C 300 o C Thermal Characteristics Symbol Parameter Ratings Units RθJC(IGBT) ( 2) Thermal Resistance, Junction to Case 0.6 o RθJC(Diode) Thermal Resistance, Junction to Case 2.6 oC/W Typ. Units 75 oC/W Symbol RθJA Parameter Thermal Resistance, Junction to Ambient (PCB Mount)(2) ©2013 Semiconductor Components Industries, LLC. August-2017, Rev. 3 1 C/W Publication Order Number: FGB20N60SFD-F085/D FGB20N60SFD-F085 600V, 20A Field Stop IGBT FGB20N60SFD-F085 Device Marking Device Package Packaging Type FGB20N60SFD FGB20N60SFD-F085 TO-263 Tube Electrical Characteristics of the IGBT Symbol Parameter Max Qty Qty per Tube per Box 50ea - TC = 25°C unless otherwise noted Test Conditions Min. Typ. Max. Units 600 - - V V/oC Off Characteristics BVCES Collector to Emitter Breakdown Voltage VGE = 0V, IC = 250μA ΔBVCES ΔTJ Temperature Coefficient of Breakdown Voltage VGE = 0V, IC = 250μA - 0.79 - ICES Collector Cut-Off Current VCE = VCES, VGE = 0V - - 250 ICES at 80%*BVCES, 150oC - - 250 VGE = VGES, VCE = 0V - - ±400 nA IC = 250μA, VCE = VGE IGES G-E Leakage Current μA On Characteristics VGE(th) VCE(sat) G-E Threshold Voltage Collector to Emitter Saturation Voltage 4.0 4.8 6.5 V IC = 20A, VGE = 15V - 2.2 2.85 V IC = 20A, VGE = 15V, TC = 125oC - 2.4 - V - 940 1250 pF VCE = 30V, VGE = 0V, f = 1MHz - 110 146 pF - 40 53 pF 13 ns Dynamic Characteristics Cies Input Capacitance Coes Output Capacitance Cres Reverse Transfer Capacitance Switching Characteristics td(on) Turn-On Delay Time - 10 tr Rise Time - 16 21 ns td(off) Turn-Off Delay Time - 90 120 ns tf Fall Time Eon Turn-On Switching Loss VCC = 400V, IC = 20A, RG = 10Ω, VGE = 15V, Inductive Load, TC = 25oC - 24 36 ns - 0.31 0.41 mJ Eoff Turn-Off Switching Loss - 0.13 0.21 mJ Ets Total Switching Loss - 0.44 0.59 mJ td(on) Turn-On Delay Time - 12 16 ns tr Rise Time - 16 21 ns td(off) Turn-Off Delay Time - 95 126 ns tf Fall Time - 28 43 ns Eon Turn-On Switching Loss - 0.45 0.60 mJ Eoff Turn-Off Switching Loss - 0.21 0.38 mJ Ets Total Switching Loss - 0.66 0.88 mJ Qg Total Gate Charge - 63 95 nC Qge Gate to Emitter Charge Qgc Gate to Collector Charge VCC = 400V, IC = 20A, RG = 10Ω, VGE = 15V, Inductive Load, TC = 125oC VCE = 400V, IC = 20A, VGE = 15V www.onsemi.com 2 - 7 11 nC - 32 48 nC FGB20N60SFD-F085 600V, 20A Field Stop IGBT Package Marking and Ordering Information Symbol Parameter VFM Diode Forward Voltage trr Diode Reverse Recovery Time Qrr Diode Reverse Recovery Charge TC = 25°C unless otherwise noted Test Conditions Min. Typ. Max o - 1.9 2.5 125oC - 1.7 - TC = 25oC - 111 - o TC = 125 C - 204 - TC = 25oC - 174 244 - 463 - TC = 25 C IF = 10A TC = IES = 10A, dIES/dt = 200A/μs TC = 125oC Units V ns nC Notes: 1: Repetitive rating: Pulse width limited by max. junction temperature 2:Rthjc for D2-PAK: according to Mil standard 883-1012 test method. Rthja for D2-PAK: according to JESD51-2, test method environmental condition and JESD51-3,low effective thermal conductivity test board for leaded surface mount package. thermal measurements. JESD51-2: Integrated Circuits Thermal Test Method Environmental Conditions - Natural Convection (Still Air). www.onsemi.com 3 FGB20N60SFD-F085 600V, 20A Field Stop IGBT Electrical Characteristics of the Diode Figure 1. Typical Output Characteristics 60 o Collector Current, IC [A] T C = 25 C 20V 10V 40 20 VGE = 8V 0 0.0 o T C = 125 C 15V 12V Collector Current, IC [A] 60 Figure 2. Typical Output Characteristics 1.5 3.0 4.5 Collector-Emitter Voltage, V CE [V] Figure 3. Typical Saturation Voltage Characteristics 40 20 VGE = 8V Common Emitter VCE = 20V Collector Current, IC [A] Collector Current, IC [A] T C = 25oC o T C = 125 C 40 20 o TC = 25 C o 1 2 3 4 Collector-Emitter Voltage, VCE [V] 20 5 0 2 4 6 8 10 Gate-Emitter Voltage,V GE [V] 20 40A 3 20A 2 IC = 10A 1 25 50 75 100 125 o Collector-EmitterCase Temperature, TC [ C] 12 Figure 6. Saturation Voltage vs. VGE Collector-Emitter Voltage, V CE [V] Common Emitter VGE = 15V TC = 125 C 40 0 0 Figure 5. Saturation Voltage vs. Case Temperature at Variant Current Level Collector-Emitter Voltage, VCE [V] 6.0 60 Common Emitter VGE = 15V 4 1.5 3.0 4.5 Collector-Emitter Voltage, V CE [V] Figure 4. Transfer Characteristics 60 0 15V 12V 10V 0 0.0 6.0 20V Common Emitter o T C = -40 C 16 12 8 IC = 10A 40A 4 20A 0 0 www.onsemi.com 4 4 8 12 16 Gate-Emitter Voltage, VGE [V] 20 FGB20N60SFD-F085 600V, 20A Field Stop IGBT Typical Performance Characteristics Figure 7. Saturation Voltage vs. VGE 20 Common Emitter o T C = 25 C 16 12 8 IC = 10A 4 40A 20A 0 0 4 8 12 16 Gate-Emitter Voltage, VGE [V] T C = 125 C 16 12 8 IC = 10A 4 0 20 Figure 9. Capacitance Characteristics 0 4 8 12 16 Gate-Emitter Voltage, V GE [V] 20 Figure 10. Gate charge Characteristics Common Emitter Common Emitter VGE = 0V, f = 1MHz o Gate-Emitter Voltage, VGE [V] Cies 2000 o TC = 25 C 1500 1000 C oes 500 Cres 0 0.1 TC = 25 C 12 300V VCC = 100V 9 200V 6 3 0 1 10 Collector-Emitter Voltage, V CE [V] 30 Figure 11. SOA Characteristics 0 20 40 60 Gate Charge, Qg [nC] 80 Figure 12. Turn-on Characteristics vs. Gate Resistance 100 100 10μs Common Emitter VCC = 600V, VGE = 15V IC = 20A 100μs 10 1ms o Switching Time [ns] Collector Current, Ic [A] 40A 20A 15 2500 Capacitance [pF] Common Emitter o Collector-Emitter Voltage, VCE [V] Collector-Emitter Voltage, V CE [V] 20 Figure 8. Saturation Voltage vs. VGE 10 ms DC 1 *Notes: 0.1 o 1. T C = 25 C TC = 25 C o TC = 125 C tr td(on) 10 o 0.01 2. T J = 150 C 3. Single Pulse 1 10 100 Collector-Emitter Voltage, V CE [V] 1000 0 www.onsemi.com 5 10 20 30 40 Gate Resistance, RG [Ω] 50 FGB20N60SFD-F085 600V, 20A Field Stop IGBT Typical Performance Characteristics Figure 13. Turn-off Characteristics vs. Gate Resistance 1000 Figure 14. Turn-on Characteristics vs. Collector Current 100 Common Emitter VCC = 600V, VGE = 15V I C = 20A Common Emitter VGE = 15V, RG = 10Ω o TC = 25 C o T C = 25 C Switching Time [ns] Switching Time [ns] o T C = 125 C td(off) 100 tf 10 0 10 20 30 40 50 TC = 125oC tr 10 td(on) 60 0 10 Gate Resistance, RG [Ω] Figure 15. Turn-off Characteristics vs. Collector Current 500 30 40 Figure 16. Switching Loss vs. Gate Resistance 3 Common Emitter VGE = 15V, RG = 10Ω Common Emitter VCC = 600V, VGE = 15V TC = 25oC IC = 20A o Switching Loss [mJ] TC = 125 C Switching Time [ns] 20 Collector Current, IC [A] td(off) 100 tf TC = 25oC 1 o TC = 125 C Eon Eoff 10 0 10 20 30 0.1 40 0 10 Collector Current, IC [A] Figure 17. Switching Loss vs. Collector Current 20 30 40 Gate Resistance, RG [Ω] 50 60 Figure 18. Turn off Switching SOA Characteristics 10 100 Common Emitter VGE = 15V, RG = 10Ω o o Eon TC = 125 C 1 Collector Current, IC [A] Switching Loss [mJ] TC = 25 C 0.1 Eoff 10 Safe Operating Area 0.01 0 10 20 30 40 1 VGE = 15V, TC = 125oC 1 Collector Current, IC [A] 10 100 Collector-Emitter Voltage, VCE [V] www.onsemi.com 6 1000 FGB20N60SFD-F085 600V, 20A Field Stop IGBT Typical Performance Characteristics Figure 20. Typical Reverse Current vs. Reverse Voltage 40 100 10 10 Reverse Current, IR [uA] Forward Current, IF [A] Figure 19. Forward Characteristics o T J = 125 C o T J = 75 C 1 TJ = 25oC 0.1 0 1 2 3 Forward Voltage, V F [V] TJ = 75oC 0.1 1E-3 4 o TJ = 25 C 0 100 200 300 400 500 Reverse Voltage, VR [V] 600 Figure 22. Reverse Recovery Time 150 Reverse Recovery Time, trr [ns] 250 200 200A/μs 150 100 di/dt = 100A/ μs 50 0 5 10 15 120 di/dt = 100A/ μ s 90 200A/ μs 60 30 0 20 5 10 15 Forward Current, IF [A] Forward Current, IF [A] Figure 23.Transient Thermal Impedance of IGBT 1 Thermal Response [Zthjc] Stored Recovery Charge, Qrr [nC] 1 0.01 Figure 21. Stored Charge 0 o TJ = 125 C 0.5 0.2 0.1 0.1 PDM 0.05 t1 0.02 0.01 single pulse 0.01 1E-5 1E-4 t2 Duty Factor, D = t1/t2 Peak Tj = Pdm x Zthjc + TC 1E-3 0.01 0.1 Rectangular Pulse Duration [sec] www.onsemi.com 7 1 10 20 FGB20N60SFD-F085 600V, 20A Field Stop IGBT Typical Performance Characteristics FGB20N60SFD-F085 600V, 20A Field Stop IGBT Mechanical Dimensions D2PAK Dimensions in Millimeters www.onsemi.com 8 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. 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