FJP13007H1TU-F080

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Other names and brands may be claimed as the property of others. Features • • • • High Voltage High Speed Power Switch Application High Voltage Capability High Switching Speed Suitable for Electronic Ballast and Switching Mode Power Supply 1 1.Base TO-220 2.Collector 3.Emitter Ordering Information Part Number Top Mark Package Packing Method FJP13007TU J13007 TO-220 3L (Dual Gauge) Rail FJP13007H1TU J13007-1 TO-220 3L (Single Gauge) Rail FJP13007H1TU-F080 J13007-1 TO-220 3L (Dual Gauge) Rail FJP13007H2TU J13007-2 TO-220 3L (Dual Gauge) Rail FJP13007H2TU-F080 J13007-2 TO-220 3L (Dual Gauge) Rail Absolute Maximum Ratings Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only. Values are at TC = 25°C unless otherwise noted. Symbol Parameter Value Unit V VCBO Collector-Base Voltage 700 VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 9 V IC Collector Current (DC) 8 A ICP Collector Current (Pulse) 16 A IB Base Current (DC) 4 A PC Collector Dissipation (TC = 25°C) 80 W TJ Junction Temperature 150 °C -65 to 150 °C TSTG Storage Temperature Range © 2005 Semiconductor Components Industries, LLC. September-2017, Rev. 2 Publication Order Number: FJP13007/D FJP13007 — High Voltage Fast-Switching NPN Power Transistor FJP13007 High Voltage Fast-Switching NPN Power Transistor Values are at TC = 25°C unless otherwise noted. Symbol Parameter BVCEO Collector-Emitter Breakdown Voltage IC = 10 mA, IB = 0 Emitter Cut-Off Current VEB = 9 V, IC = 0 IEBO Conditions Min. Typ. Max. 400 V 1 hFE1 DC Current Gain (1) VCE = 5 V, IC = 2 A 8 60 hFE2 DC Current Gain(1) VCE = 5 V, IC = 5 A 5 30 VCE(sat) VBE(sat) Collector-Emitter Saturation Voltage Collector-Base Saturation Voltage IC = 2 A, IB = 0.4 A 1.0 IC = 5 A, IB = 1 A 2.0 IC = 8 A, IB = 2 A 3.0 IC = 2 A, IB = 0.4 A 1.2 IC = 5 A, IB = 1 A 1.6 Current Gain Bandwidth Product VCE = 10 V, IC = 0.5 A Cob Output Capacitance VCB = 10 V, f = 0.1 MHz tON Turn-On Time tSTG Storage Time VCC = 125 V, IC = 5 A, IB1 = -IB2 = 1 A, RL = 25 Ω fT tF Fall Time 4 mA V V MHz 110 pF 1.6 μs 3.0 μs 0.7 μs Note: 1. Pulse test: pw ≤ 300 μs, duty cycle ≤ 2%. hFE Classification Classification H1 H2 hFE1 15 ~ 28 26 ~ 39 www.onsemi.com 2 Unit FJP13007 — High Voltage Fast-Switching NPN Power Transistor Electrical Characteristics VBE(sat), VCE(sat)[V], SATURATION VOLTAGE 100 hFE, DC CURRENT GAIN VCE = 5V 10 1 0.1 1 10 IC = 3 IB 1 VBE(sat) VCE(sat) 0.1 0.01 0.1 10 1 Figure 1. DC Current Gain 1000 tR, tD [ns], TURN ON TIME Cob[pF], OUTPUT CAPACITANCE 100 Figure 2. Saturation Voltage 1000 100 10 tR 100 tD, VBE(off)=5V VCC=125V IC=5IB 1 0.1 1 10 100 10 0.1 1000 1 VCB[V], COLLECTOR-BASE VOLTAGE 10 IC[A], COLLECTOR CURRENT Figure 3. Collector Output Capacitance Figure 4. Turn-On Time 100 10000 VCC=125V IC=5IB tSTG IC[A], COLLECTOR CURRENT tSTG, tF [ns], TURN OFF TIME 10 IC[A], COLLECTOR CURRENT IC[A], COLLECTOR CURRENT 1000 100 10 0.1 tF 10μs 10 1ms DC 100μs 1 0.1 0.01 1 10 1 Figure 5. Turn-Off Time 10 100 1000 VCE[V], COLLECTOR-EMITTER VOLTAGE IC[A], COLLECTOR CURRENT Figure 6. Forward Biased Safe Operating Area www.onsemi.com 3 FJP13007 — High Voltage Fast-Switching NPN Power Transistor Typical Performance Characteristics 100 Vcc=50V, IB1=1A, IB2 = -1A L = 1mH 10 1 0.1 90 PC[W], POWER DISSIPATION IC[A], COLLECTOR CURRENT 100 80 70 60 50 40 30 20 10 0.01 10 0 100 1000 0 10000 VCE[V], COLLECTOR-EMITTER VOLTAGE 25 50 75 100 125 o 150 TC[ C], CASE TEMPERATURE Figure 8. Power Derating Figure 7. Reverse Biased Safe Operating Area www.onsemi.com 4 175 FJP13007 — High Voltage Fast-Switching NPN Power Transistor Typical Performance Characteristics (Continued) ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. 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