FOD420SD

6-Pin DIP High dv/dt Random Phase Triac Drivers FOD420, FOD4208, FOD4216, FOD4218 www.onsemi.com Description The FOD420, FOD4208, FOD4216 and FOD4218 devices consist of an infrared emitting diode coupled to a hybrid random phase triac formed with two inverse parallel SCRs which form the triac function capable of driving discrete triacs. The FOD4216 and FOD4218 utilize a high efficiency infrared emitting diode which offers an improved trigger sensitivity. These devices are housed in a standard 6−pin dual in−line (DIP) package. 1 1 • 300 mApeak On−State Current • High Blocking Voltage • 1 MARKING DIAGRAM ON FOD420 V X YY D ON = ON Semiconductor Logo FOD420 = Device Number V = VDE mark. DIN EN/IEC60747−5−5 Option (only appears on component ordered with this option) X = One−Digit Year Code YY = Digit Work Week D = Assembly Package Code Applications • • • • • PDIP6 7.3x6.5, 2.54P CASE 646CF 6 600 V (FOD420, FOD4216) ♦ 800 V (FOD4208, FOD4218) High Trigger Sensitivity ♦ 1.3 mA (FOD4216, FOD4218) ♦ 2 mA (FOD420, FOD4208) High Static dv/dt (10,000 V/ms) Safety and Regulatory Approvals: ♦ UL1577, 5,000 VACRMS for 1 Minute ♦ DIN−EN/IEC60747−5−5 These Devices are Pb−Free and are RoHS Compliant ♦ • • PDIP6 7.3x6.5, 2.54P CASE 646CE 6 Features • PDIP6 GW CASE 709AG 6 Solid−State Relays Industrial Controls Lighting Controls Static Power Switches AC Motor Starters FUNCTIONAL SCHEMATIC ANODE 1 CATHODE 2 N/C 3 6 MAIN TERM. 5 NC* 4 MAIN TERM. *DO NOT CONNECT (TRIAC SUBSTRATE) ORDERING INFORMATION See detailed ordering and shipping information on page 8 of this data sheet. © Semiconductor Components Industries, LLC, 2018 August, 2020 − Rev. 4 1 Publication Order Number: FOD4218/D FOD420, FOD4208, FOD4216, FOD4218 SAFETY AND INSULATION RATINGS Parameter Characteristics Installation Classifications per DIN VDE 0110/1.89 Table 1, For Rated Mains Voltage < 150 VRMS I–IV < 300 VRMS I–IV Climatic Classification 55/100/21 Pollution Degree (DIN VDE 0110/1.89) 2 Comparative Tracking Index Symbol 175 Value Unit Input−to−Output Test Voltage, Method A, VIORM x 1.6 = VPR, Type and Sample Test with tm = 10 s, Partial Discharge < 5 pC 1360 Vpeak Input−to−Output Test Voltage, Method B, VIORM x 1.875 = VPR, 100% Production Test with tm = 1 s, Partial Discharge < 5 pC 1594 Vpeak VIORM Maximum Working Insulation Voltage 850 Vpeak VIOTM Highest Allowable Over−Voltage 6000 Vpeak External Creepage ≥7 mm External Clearance ≥7 mm VPR Parameter DTI Distance Through Insulation (Insulation Thickness) ≥0.4 mm TS Case Temperature (Note 1) 175 °C IS,INPUT Input Current (Note 1) 400 mA PS,OUTPUT Output Power (Note 1) 700 mW Insulation Resistance at TS, VIO = 500 V (Note 1) >109 W RIO As per DIN EN/IEC 60747−5−5, this optocoupler is suitable for “safe electrical insulation” only within the safety limit data. Compliance with the safety ratings shall be ensured by means of protective circuits. 1. Safety limit values – maximum values allowed in the event of a failure. www.onsemi.com 2 FOD420, FOD4208, FOD4216, FOD4218 ABSOLUTE MAXIMUM RATINGS (TA = 25°C, unless otherwise specified) Symbol Device Value Unit TSTG Storage Temperature All −55 to +150 °C TOPR Operating Temperature All −55 to +100 °C Junction Temperature All −55 to +125 °C Lead Solder Temperature All 260 for 10 sec °C Total Device Power Dissipation @ 25°C All 500 mW Derate Above 25°C All 6.6 mW/°C IF Continuous Forward Current All 30 mA VR Reverse Voltage All 6 V Total Power Dissipation 25°C Ambient All 50 mW Derate Above 25°C All 0.71 mW/°C FOD420, FOD4216 600 V FOD4208, FOD4218 800 TJ TSOL PD(TOTAL) Parameter EMITTER PD(EMITTER) DETECTOR VDRM Off−State Output Terminal Voltage ITSM Peak Non−Repetitive Surge Current (single cycle 60 Hz sine wave) All 3 Apeak ITM Peak On−State Current All 300 mApeak PD(DETECTOR) Total Power Dissipation @ 25°C Ambient All 450 mW PD(DETECTOR) Derate Above 25°C All 5.9 mW/°C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. www.onsemi.com 3 FOD420, FOD4208, FOD4216, FOD4218 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified) Symbol Parameter Test Condition Device Min Typ Max Unit INDIVIDUAL COMPONENT CHARACTERISTICS Emitter VF Input Forward Voltage IF = 20 mA All − 1.28 1.50 V IR Reverse Leakage Current VR = 6 V All − 0.01 10 mA Peak Blocking Current, Either Direction IF = 0, TA = 100°C (Note 2) VD = 600 V FOD420, FOD4216 − 3 100 mA VD = 800 V FOD4208, FOD4218 TA = 100°C VD = 600 V FOD420, FOD4216 − 3 100 mA VD = 800 V FOD4208, FOD4218 VD = VDRM All 10,000 − − V/ms FOD420, FOD4208 − 0.75 2.0 mA FOD4216, FOD4218 − 0.75 1.3 Detector ID(RMS) IR(RMS) dv/dt Reverse Current Critical Rate of Rise of Off−State Voltage IF = 0 A (Note 3) TRANSFER CHARACTERISTICS IFT LED Trigger Current Main Terminal Voltage = 5 V (Note 4) VTM Peak On−State Voltage, Either Direction ITM = 300 mA peak, IF = Rated IFT All − 2.2 3 V IH Holding Current, Either Direction VT = 3 V All − 200 500 mA IL Latching Current VT = 2.2 V Turn−On Time PF = 1.0, IT = 300 mA tON tOFF Turn−Off Time All − 5 − mA VRM = VDM = 424 VAC FOD420, FOD4216, FOD4218 − 60 − ms VRM = VDM = 565 VAC FOD4208 VRM = VDM = 424 VAC FOD420, FOD4216, FOD4218 − 52 − ms VRM = VDM = 565 VAC FOD4208 dv/dtC Critical Rate of Rise of Voltage at Current Commutation VD = 230 VRMS, ID = 300 mAPK All − 10 − V/ms di/dtC Critical Rate of Rise of On−State Current Commutation VD = 230 VRMS, ID = 300 mAPK All − 9 − A/ms dv(IO)/dt Critical Rate of Rise of Coupled Input / Output Voltage IT = 0 A, VRM = VDM = 424 VAC All 10,000 − − V/ms f = 60 Hz, t = 1 Minute (Note 5) All 5,000 − − VACRMS ISOLATION CHARACTERISTICS VISO Steady State Isolation Voltage Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 2. Test voltage must be applied within dv/dt rating. 3. This is static dv/dt.. Commutating dv/dt is a function of the load−driving thyristor(s) only. 4. All devices are guaranteed to trigger at an IF value less than or equal to max IFT.Therefore, recommended operating IF lies between max IFT (2 mA for FOD420 and FOD4208 and 1.3 mA for FOD4216 and FOD4218) and the absolute max IF (30 mA). 5. Isolation voltage, VISO, is an internal device dielectric breakdown rating. For this test, pins 1, 2 and 3 are common, and pins 4, 5 and 6 are common. 5,000 VACRMS for 1 minute duration is equivalent to 6,000 VACRMS for 1 second duration. www.onsemi.com 4 FOD420, FOD4208, FOD4216, FOD4218 TYPICAL APPLICATION Figure 1 shows a typical circuit for when hot line switching is required. In this circuit the “hot” side of the line is switched and the load connected to the cold or neutral side. The load may be connected to either the neutral or hot line. Rin is calculated so that IF is equal to the rated IFT of the VCC Rin 1 2 3 6 FOD420 FOD4208 FOD4216 FOD4218 part, 2 mA for FOD420 and FOD4208, 1.3 mA for FOD4216 and FOD4218. The 39 W resistor and 0.01 mF capacitor are for snubbing of the triac and may or may not be necessary depending upon the particular triac and load use. 360 W HOT 5 FKPF12N80 39 W* 4 240 VAC 0.01 mF 330 W LOAD NEUTRAL *For highly inductive loads (power factor < 0.5), change this value to 360 W. Figure 1. Hot−Line Switching Application Circuit 240 VAC R1 1 VCC Rin 2 3 D1 6 FOD420 FOD4208 FOD4216 FOD4218 SCR 5 4 SCR 360 W R2 D2 LOAD Figure 2. Inverse−Parallel SCR Driver Circuit Suggested method of firing two, back−to−back SCR’s with On Semiconductor triac driver. Diodes can be 1N4001; resistors, R1 and R2, are optional 330 W. NOTE: This optoisolator should not be used to drive a load directly. It is intended to be a discrete triac driver device only. www.onsemi.com 5 FOD420, FOD4208, FOD4216, FOD4218 IFT – NORMALIZED LED TRIGGER CURRENT TYPICAL CHARACTERISTICS VF – FORWARD VOLTAGE (V) 1.8 1.6 1.4 −55°C 1.2 25°C 1.0 85°C 0.8 0.6 0.1 1 10 IF – FORWARD CURRENT (mA) 100 1.6 1.4 1.2 1.0 0.8 0.6 −60 −40 Figure 3. Forward Voltage (VF) vs. Forward Current (IF) 100 t Duty Factor 0.005 0.01 1000 0.02 0.05 0.1 0.1 0.2 0.2 0.5 0.5 100 10 10 −6 10 −5 t t DF = t 10 −4 10 −3 10 −2 10 −1 t – LED PULSE DURATION (s) 10 0 10 1 10 1 1.4 1.3 1.2 1.1 1.0 0.9 0 200 400 600 800 PW – PULSE WIDTH (ms) 100 1000 ITM – ON−STATE CURRENT (mA) IFTH(PW) / IFTH(DC) − NORMALIZED IFTH 1.5 10 IFT / IF – NORMALIZED IF (mA) 1 Figure 6. Trigger Delay Time VL = 250 VP−P F = 60 Hz Normalized to DC 1.6 100 TD = t (IF / IFT 25°C) VD = 400 VP−P F = 60 Hz Figure 5. Peak LED Current vs. Duty Factor, Tau 1.7 −20 0 20 40 60 80 TA – AMBIENT TEMPERATURE (°C) Figure 4. Normalized LED Trigger Current (IFT) vs. Ambient Temperature (TA) tD – DELAY TIME (ms) If(pk) – PEAK LED CURRENT (mA) 10000 VAK = 5.0 V Normalized to TA = 25°C 100 1 1000 TA = 100°C 10 0 Figure 7. Pulse Trigger Current 1 TA = 25°C 5 2 3 4 VTM – ON−STATE VOLTAGE (V) Figure 8. On−State Voltage (VTM) vs. On−State Current (ITM) www.onsemi.com 6 6 FOD420, FOD4208, FOD4216, FOD4218 IDRM – NORMALIZED OFF−STATE CURRENT 2.2 Normalized to to TA = 25°C 2.0 1.8 1.6 1.4 1.2 1.0 0.8 −60 −40 −20 0 20 40 60 80 100 10 VD = 800 V, IBD (mA) Normalized to to TA = 25°C 1 0.1 −60 −40 TA – AMBIENT TEMPERATURE (°C) −20 0 40 60 80 100 Figure 10. Normalized Off−State Current (IDRM) vs. Ambient Temperature (TA) 350 ITP = f (TA) 300 250 200 150 100 50 −60 −40 20 TA – AMBIENT TEMPERATURE (°C) Figure 9. Normalized Holding Current (IH) vs. Ambient Temperature (TA) ITP – PEAK ON−STATE CURRENT (mA) IH – NORMALIZED HOLDING CURRENT TYPICAL CHARACTERISTICS (continued) −20 0 20 40 60 TA – AMBIENT TEMPERATURE (°C) Figure 11. Current Reduction www.onsemi.com 7 80 100 FOD420, FOD4208, FOD4216, FOD4218 REFLOW PROFILE 245°C, 10 to 30 seconds Temperature (°C) 300 260°C peak 250 200 150 Time above 183°C, < 160 seconds 100 50 Ramp up = 2 to 10°C/second 0 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 Time (Minute) •Peak reflow temperature: 262°C (package surface temperature) •Time of temperature higher than 183°C for 160 seconds or less •One time soldering reflow is recommended Figure 12. Reflow Profile ORDERING INFORMATION Part Number Package Shipping† FOD420 DIP 6−Pin 50 Units / Tube FOD420S SMT 6−Pin (Lead Bend) 50 Units / Tube FOD420SD SMT 6−Pin (Lead Bend) 1000 / Tape & Reel FOD420V DIP 6−Pin, DIN EN/IEC60747−5−5 Option 50 Units / Tube FOD420SV SMT 6−Pin (Lead Bend), DIN EN/IEC60747−5−5 Option 50 Units / Tube FOD420SDV SMT 6−Pin (Lead Bend), DIN EN/IEC60747−5−5 Option 1000 / Tape & Reel FOD420TV DIP 6−Pin, 0.4” Lead Spacing, DIN EN/IEC60747−5−5 Option 50 Units / Tube †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. 6. The product orderable part number system listed in this table also applies to the FOD4208, FOD4216, and FOD4218product families. www.onsemi.com 8 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS PDIP6 7.3x6.5, 2.54P CASE 646CE ISSUE O DOCUMENT NUMBER: DESCRIPTION: 98AON13456G PDIP6 7.3X6.5, 2.54P DATE 31 JUL 2016 Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the rights of others. © Semiconductor Components Industries, LLC, 2019 www.onsemi.com MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS PDIP6 7.3x6.5, 2.54P CASE 646CF ISSUE O DOCUMENT NUMBER: DESCRIPTION: 98AON13457G PDIP6 7.3X6.5, 2.54P DATE 31 JUL 2016 Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the rights of others. © Semiconductor Components Industries, LLC, 2019 www.onsemi.com MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS PDIP6 GW CASE 709AG ISSUE A DOCUMENT NUMBER: DESCRIPTION: 98AON13455G PDIP6 GW DATE 31 JUL 2016 Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the rights of others. © Semiconductor Components Industries, LLC, 2019 www.onsemi.com onsemi, , and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. 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