FOD817BSD

DATA SHEET www.onsemi.com 4-Pin DIP Phototransistor Optocouplers FOD814, FOD817 PDIP4 CASE 646CD CASE 646CA PDIP4 GW CASE 709AH Introduction or Description The FOD814 consists of two gallium arsenide infrared emitting diodes, connected in inverse parallel, driving a silicon phototransistor output in a 4−pin dual in−line package. The FOD817 Series consists of a gallium arsenide infrared emitting diode driving a silicon phototransistor in a 4−pin dual in−line package. Features FOD814: 20–300% FOD814A: 50–150% ♦ FOD817: 50–600% ♦ FOD817A: 80–160% ♦ FOD817B: 130–260% ♦ FOD817C: 200–400% ♦ FOD817D: 300–600% Minimum BVCEO of 70 V Guaranteed Safety and Regulatory Approvals ♦ UL1577, 5,000 VACRMS for 1 Minute ♦ DIN EN/IEC60747−5−5 This Device is Pb−Free ♦ ♦ • VXZZY $Y 81x V X ZZ Y $Y 81x • AC Input Response (FOD814) • Current Transfer Ratio in Selected Groups • • MARKING DIAGRAM = VDE Mark = One Digit Year Code = Two Digit Work Week = Assembly Package Code = Logo = Specific Device Code x = 4 or 7 ORDERING INFORMATION See detailed ordering and shipping information on page 8 of this data sheet. Typical Applications • FOD814 Series AC Line Monitor Unknown Polarity DC Sensor ♦ Telephone Line Interface FOD817 Series ♦ Power Supply Regulators ♦ Digital Logic Inputs ♦ Microprocessor Inputs ♦ ♦ • © Semiconductor Components Industries, LLC, 2006 August, 2021 − Rev. 7 1 Publication Order Number: FOD814/D FOD814, FOD817 FUNCTIONAL BLOCK DIAGRAM Anode, Cathode 1 4 Collector Cathode, Anode 3 Emitter 2 Anode 1 4 Collector Cathode 2 3 Emitter Figure 1. Schematic − FOD814 Figure 2. Schematic − FOD817 SAFETY AND INSULATION RATINGS Parameter Installation Classifications per DIN VDE 0110/1.89 Table 1, For Rated Mains Voltage Characteristics < 150 VRMS I–IV < 300 VRMS I–III Climatic Classification 30/110/21 Pollution Degree (DIN VDE 0110/1.89) 2 Comparative Tracking Index 175 Symbol Value Unit Input−to−Output Test Voltage, Method A, VIORM x 1.6 = VPR, Type and Sample Test with tm = 10 s, Partial Discharge < 5 pC 1360 Vpeak Input−to−Output Test Voltage, Method B, VIORM x 1.875 = VPR, 100% Production Test with tm = 1 s, Partial Discharge < 5 pC 1594 VIORM Maximum Working Insulation Voltage 850 VIOTM Highest Allowable Over−Voltage 8000 VPR Parameter External Creepage ≥7 External Clearance ≥7 mm External Clearance (for Option W, 0.4” Lead Spacing) ≥ 10 DTI Distance Through Insulation (Insulation Thickness) ≥ 0.4 TS Case Temperature (Note 1) 175 °C IS,INPUT Input Current (Note 1) 400 mA PS,OUTPUT Output Power (Note 1) 700 mW Insulation Resistance at TS, VIO = 500 V (Note 1) 1011 RIO >  As per DIN EN/IEC 60747−5−5, this optocoupler is suitable for “safe electrical insulation” only within the safety limit data. Compliance with the safety ratings shall be ensured by means of protective circuits. 1. Safety limit values − maximum values allowed in the event of a failure. ABSOLUTE MAXIMUM RATINGS TA = 25°C unless otherwise specified. Value Symbol FOD814 Parameter FOD817 Unit TOTAL DEVICE TSTG Storage Temperature TOPR Operating Temperature TJ TSOL JC PTOT −55 to +150 −55 to +105 °C −55 to +110 Junction Temperature −55 to +125 Lead Solder Temperature 260 for 10 s Junction−to−Case Thermal Resistance 210 °C/W Total Device Power Dissipation 200 mW www.onsemi.com 2 FOD814, FOD817 ABSOLUTE MAXIMUM RATINGS TA = 25°C unless otherwise specified. (continued) Value Symbol Parameter FOD814 FOD817 Unit ±50 50 mA 6 V EMITTER IF Continuous Forward Current VR Reverse Voltage PD Power Dissipation 70 mW Derate Above 100°C 1.7 mW/°C VCEO Collector−Emitter Voltage 70 V VECO Emitter−Collector Voltage 6 IC Continuous Collector Current 50 mA PC Collector Power Dissipation 150 mW Derate Above 90°C 2.9 mW/°C DETECTOR Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. ELECTRICAL CHARACTERISTICS TA = 25°C unless otherwise specified. INDIVIDUAL COMPONENT CHARACTERISTICS Symbol Parameter Device Test Conditions Min Typ Max Unit FOD814 IF = ±20 mA − 1.2 1.4 V FOD817 IF = 20 mA − 1.2 1.4 Emmiter VF Forward Voltage IR Reverse Current FOD817 VR = 4.0 V − − 10 A Ct Terminal Capacitance FOD814 V = 0, f = 1 kHz − 50 250 pF − 30 250 − − 100 − − 100 70 − − 70 − − 6 − − 6 − − FOD817 Detector ICEO Collector Dark Current FOD814 VCE = 20 V, IF = 0 FOD817 BVCEO BVECO Collector−Emitter Breakdown Voltage FOD814 Emitter−Collector Breakdown Voltage FOD814 IC = 0.1 mA, IF = 0 FOD817 IE = 10 A, IF = 0 FOD817 nA V DC TRANSFER CHARACTERISTICS Symbol CTR Parameter Current Transfer Ratio (Note 2) Device Test Conditions Min Typ Max Unit FOD814 IF = ±1 mA, VCE = 5 V 20 − 300 % 50 − 150 50 − 600 FOD817A 80 − 160 FOD817B 130 − 260 FOD817C 200 − 400 FOD817D 300 − 600 FOD814A FOD817 VCE(SAT) Collector−Emitter Saturation Voltage IF = 5 mA, VCE = 5 V FOD814 IF = ±20 mA, IC = 1 mA − 0.1 0.2 FOD817 IF = 20 mA, IC = 1 mA − 0.1 0.2 www.onsemi.com 3 V FOD814, FOD817 ELECTRICAL CHARACTERISTICS TA = 25°C unless otherwise specified. (continued) AC TRANSFER CHARACTERISTICS Parameter Symbol Device Test Conditions Min Typ Max Unit VCE = 5 V, IC = 2 mA, RL = 100 Ω, −3 dB 15 80 − kHz − 4 18 s − 3 18 fC Cut−Off Frequency FOD814 tr Response Time (Rise) FOD814, FOD817 tf Response Time (Fall) FOD814, FOD817 VCE = 2 V, IC = 2 mA, RL = 100  (Note 3) ISOLATION CHARACTERISTICS Symbol Device Test Conditions Min Typ Max Unit VISO Input−Output Isolation Voltage (Note 4) Parameter FOD814, FOD817 f = 60 Hz, t = 1 min, II−O ≤ 2 A 5000 − − VACRMS RISO Isolation Resistance FOD814, FOD817 VI−O = 500 VDC 5x1010 1x1011 −  CISO Isolation Capacitance FOD814, FOD817 VI−O = 0, f = 1 MHz − 0.6 1.0 pf Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 2. Current Transfer Ratio (CTR) = IC / IF x 100% 3. For test circuit setup and waveforms, refer to page 5. 4. For this test, Pins 1 and 2 are common, and Pins 3 and 4 are common. TYPICAL ELECTRICAL/OPTICAL CHARACTERISTICS CURVES 200 PC, Collector Power Dissipation (mW) PC, Collector Power Dissipation (mW) TA = 25°C unless otherwise specified. 150 100 50 0 −55 −40 −20 0 20 40 60 80 100 120 200 150 100 50 0 −55 −40 −20 0 20 40 60 80 100 120 TA, Ambient Temperature (5C) TA, Ambient Temperature (5C) Figure 3. Collector Power Dissipation vs. Ambient Temperature (FOD814) Figure 4. Collector Power Dissipation vs. Ambient Temperature (FOD817) www.onsemi.com 4 FOD814, FOD817 TYPICAL ELECTRICAL/OPTICAL CHARACTERISTICS CURVES 6 100 TA = 25°C IC = 0.5 mA 5 TA = 105°C 1 mA 3 mA 4 IF, Forward Current (mA) VCE(sat), Collector−Emitter Saturation Voltage (V) TA = 25°C unless otherwise specified. (continued) 5 mA 7 mA 3 2 1 0 0 2.5 5 7.5 10 12.5 75°C 50°C 10 25°C 0°C −30°C 1 −55°C 0.1 0.5 15 1.0 IF, Forward Current (mA) Figure 6. Forward Current vs. Forward Voltage (FOD814) 140 Current Transfer Ratio CTR (%) IF, Forward Current (mA) 100 TA = 110°C 75°C 50°C 25°C 0°C −30°C 1 −55°C 0.1 0.5 1.0 1.5 VCE = 5 V TA = 25°C 120 FOD817 100 FOD814 80 60 40 20 0 0.1 2.0 0.2 0.5 VF, Forward Voltage (V) PC(max) IF = 30 mA 20 mA 10 mA 20 5 10 30 TA = 25°C 30 2 20 50 100 Figure 8. Current Transfer Ratio vs. Forward Current IC, Collector Current (mA) IC, Collector Current (mA) 40 1 IF, Forward Current (mA) Figure 7. Forward Current vs. Forward Voltage (FOD817) 50 2.0 VF, Forward Voltage (V) Figure 5. Collector−Emitter Saturation Voltage vs. Forward Current 10 1.5 5 mA 10 TA = 25°C 20 mA IF = 30 mA 25 PC(max) 20 15 10 mA 10 5 mA 5 1 mA 0 0 10 20 30 40 50 60 70 80 0 90 100 0 10 20 30 40 50 60 70 VCE, Collector−Emitor Voltage (V) VCE, Collector−Emitor Voltage (V) Figure 9. Collector Current vs. Collector−Emitor Voltage (FOD814) Figure 10. Collector Current vs. Collector−Emitor Voltage (FOD817) www.onsemi.com 5 80 90 FOD814, FOD817 TYPICAL ELECTRICAL/OPTICAL CHARACTERISTICS CURVES Relative Current Transfer Ratio (%) 160 VCE(sat), Collector−Emitter Saturation Voltage (V) TA = 25°C unless otherwise specified. (continued) FOD814 IF = 1 mA VCE = 5 v 140 120 100 80 60 FOD817 IF = 5 mA VCE = 5 v 40 20 0 −60 −40 −20 0 20 40 60 80 0.10 IF = 20 mA IC = 1 mA 0.08 0.06 0.04 0.02 0 −60 −40 100 120 −20 0 20 40 60 80 100 120 TA, Ambient Temperature (5C) TA, Ambient Temperature (5C) Figure 11. Relative Current Transfer Ratio vs. Ambient Temperature Figure 12. Collector−Emitter Saturation Voltage vs. Ambient Temperature 100 100 PLED, Led Power Dissipation (mW) PLED, Led Power Dissipation (mW) 0.12 80 60 40 20 0 −55 −40 −20 0 20 40 60 80 100 120 80 60 40 20 0 −55 −40 −20 0 20 40 60 80 100 120 TA, Ambient Temperature (5C) TA, Ambient Temperature (5C) Figure 13. Led Power Dissipation vs. Ambient Temperature (FOD814) Figure 14. Led Power Dissipation vs. Ambient Temperature (FOD817) VCE = 2 V 50 IC = 2 mA TA = 25°C 20 tr 10 AV, Voltage Gain (dB) Response Time (ms) 100 tf td 5 2 ts 1 0.5 0 0.1 0.2 0.5 1 2 5 −20 10 100 k −10 0.2 0.1 1 k RL = 10 k VCE = 2 V IC = 2 mA TA = 25°C 0.2 0.5 1.5 2 10 100 RL, Load Resistance (kW) f, Frequency (kHz) Figure 15. Response Time vs. Load Resistance Figure 16. Frequency Response www.onsemi.com 6 1000 FOD814, FOD817 TYPICAL ELECTRICAL/OPTICAL CHARACTERISTICS CURVES TA = 25°C unless otherwise specified. (continued) ICEO, Collector Dark Current (nA) 10000 VCE = 20 V 1000 100 10 1 0.1 0.01 −60 −40 −20 0 20 40 60 80 100 120 TA, Ambient Temperature (5C) Figure 17. Collector Dark Current vs. Ambient Temperature Vcc RD Input RL Vcc Input Output 10% Output RD 90% td RL Output ts tr tf Figure 18. Test Circuit for Response Time Figure 19. Test Circuit for Frequency Response www.onsemi.com 7 FOD814, FOD817 REFLOW PROFILE 260 TP 240 Temperature (5C) 220 TL 200 180 Max. Ramp−up Rate = 3°C/s Max. Ramp−down Rate = 6°C/s tP Tsmax tL Preheat Area 160 Tsmin 140 ts 120 100 80 60 40 20 0 120 240 360 Time 25°C to Peak Time (s) Figure 20. Reflow Profile REFLOW PROFILE Profile Feature Pb−Free Assembly Profile Temperature Min. (Tsmin) 150°C Temperature Max. (Tsmax) 200°C Time (tS) from (Tsmin to Tsmax) 60−120 s Ramp−up Rate (tL to tP) 3°C/s max. Liquidous Temperature (TL) 217°C Time (tL) Maintained Above (TL) 60−150 s Peak Body Package Temperature 260°C +0°C / −5°C Time (tP) within 5°C of 260°C 30 s Ramp−down Rate (TP to TL) 6°C/s max. Time 25°C to Peak Temperature 8 min max. ORDERING INFORMATION Part Number FOD817X Package Shipping† DIP 4−Pin Tube (100 units per tube) FOD817XS SMT 4−Pin (Lead Bend) Tube (100 units per tube) Tape and Reel (1,000 units per reel) FOD817XSD SMT 4−Pin (Lead Bend) FOD817X300 DIP 4−Pin, DIN EN/IEC60747−5−5 option Tube (100 units per tube) FOD817X3S SMT 4−Pin (Lead Bend), DIN EN/IEC60747−5−5 option Tube (100 units per tube) FOD817X3SD SMT 4−Pin (Lead Bend), DIN EN/IEC60747−5−5 option Tape and Reel (1,000 units per reel) DIP 4−Pin, 0.4″ Lead Spacing, DIN EN/IEC60747−5−5 option Tape and Reel (1,000 units per reel) FOD817X300W †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. NOTE: The product orderable part number system listed in this table also applies to the FOD814 products. ″X″ denotes the Current Transfer Ratio (CTR) options. www.onsemi.com 8 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS PDIP4 4.6x6.5, 2.54P CASE 646CA ISSUE O DOCUMENT NUMBER: DESCRIPTION: 98AON13453G PDIP4 4.6X6.5, 2.54P DATE 31 JUL 2016 Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the rights of others. © Semiconductor Components Industries, LLC, 2019 www.onsemi.com MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS PDIP4 4.6x6.5, 2.54P CASE 646CD ISSUE O DOCUMENT NUMBER: DESCRIPTION: 98AON13452G PDIP4 4.6X6.5, 2.54P DATE 31 JUL 2016 Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the rights of others. © Semiconductor Components Industries, LLC, 2019 www.onsemi.com MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS PDIP4 GW CASE 709AH ISSUE A DOCUMENT NUMBER: DESCRIPTION: 98AON13454G PDIP4 GW DATE 31 JUL 2016 Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. 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