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N-Channel QFET® FRFET® MOSFET
500 V, 10 A, 610 m
Features
Description
• 10 A, 500 V, RDS(on) = 610 mΩ (Max.) @ VGS = 10 V, ID = 5 A
This N-Channel enhancement mode power MOSFET is produced using ON Semiconductor’s proprietary planar stripe and
DMOS technology. This advanced MOSFET technology has
been especially tailored to reduce on-state resistance, and to
provide superior switching performance and high avalanche
energy strength. These devices are suitable for switched mode
power supplies, active power factor correction (PFC), and electronic lamp ballasts.
• Low gate charge ( Typ. 45 nC)
• Low Crss ( Typ. 17.5 pF)
• 100% avalanche tested
• Fast recovery body diode
D
D
G
S
G
D2-PAK
S
MOSFET Maximum Ratings TC = 25oC unless otherwise noted
Symbol
VDSS
Drain to Source Voltage
Parameter
VGSS
Gate to Source Voltage
ID
Drain Current
- Continuous (TC = 25oC)
- Continuous (TC = 100oC)
IDM
Drain Current
- Pulsed
EAS
Single Pulsed Avalanche Energy
FQB10N50CFTM-WS
500
Unit
V
±30
V
10
A
6.35
(Note 1)
40
A
(Note 2)
825
mJ
IAR
Avalanche Current
(Note 1)
10
A
EAR
Repetitive Avalanche Energy
(Note 1)
14.3
mJ
dv/dt
Peak Diode Recovery dv/dt
2.0
V/ns
(Note 3)
(TC = 25oC)
PD
Power Dissipation
TJ, TSTG
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
TL
- Derate above 25oC
143
W
1.14
W/oC
-55 to +150
oC
300
oC
FQB10N50CFTM-WS
Unit
Thermal Characteristics
Symbol
RJC
RJA
Parameter
Thermal Resistance, Junction to Case, Max
0.87
Thermal Resistance, Junction to Ambient (minimum pad of 2 oz copper), Max.
2
Thermal Resistance, Junction to Ambient (1 in pad of 2 oz copper), Max.
©2010 Semiconductor Components Industries, LLC
September-2017, Rev. 3
62.5
oC/W
40
Publication Order Number:
FQB10N50CFTM-WS
FQB10N50CF — N-Channel QFET® FRFET® MOSFET
FQB10N50CF
Device Marking
FQB10N50CF
Device
FQB10N50CFTM-WS
Package
D2-PAK
Reel Size
330mm
Tape Width
24mm
Quantity
800
Electrical Characteristics
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
500
-
-
V
ID = 250A, Referenced to 25 C
-
0.5
-
V/oC
VDS = 500V , VGS = 0V
Off Characteristics
BVDSS
BVDSS
/ TJ
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
IDSS
Zero Gate Voltage Drain Current
IGSS
Gate to Body Leakage Current
ID = 250A, VGS = 0V, TJ = 25oC
o
-
-
10
VDS = 400V, TC = 125oC
-
-
100
VGS = ±30V, VDS = 0V
-
-
±100
A
nA
On Characteristics
VGS(th)
RDS(on)
Gate Threshold Voltage
VGS = VDS, ID = 250A
2.0
-
4.0
V
Static Drain to Source On Resistance
VGS = 10V, ID = 5A
-
0.51
0.61
gFS
Forward Transconductance
VDS = 20V, ID = 5A
-
105
-
S
VDS = 25V, VGS = 0V
f = 1MHz
-
1660
2210
pF
-
182
240
pF
-
17.5
26
pF
-
45
60
nC
-
8
-
nC
-
19
-
nC
ns
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Qg(tot)
Total Gate Charge at 10V
Qgs
Gate to Source Gate Charge
Qgd
Gate to Drain “Miller” Charge
VDS = 400V, ID = 10A
VGS = 10V
(Note 4)
Switching Characteristics
td(on)
Turn-On Delay Time
tr
Turn-On Rise Time
td(off)
Turn-Off Delay Time
tf
Turn-Off Fall Time
VDD = 250V, ID = 10A
RG = 25
(Note 4)
-
25
60
-
47
105
ns
-
138
285
ns
-
55
120
ns
Drain-Source Diode Characteristics
IS
Maximum Continuous Drain to Source Diode Forward Current
-
-
10
A
ISM
Maximum Pulsed Drain to Source Diode Forward Current
-
-
40
A
VSD
Drain to Source Diode Forward Voltage
VGS = 0V, ISD = 10A
-
-
1.4
V
trr
Reverse Recovery Time
91
-
ns
Qrr
Reverse Recovery Charge
VGS = 0V, ISD = 10A
dIF/dt = 100A/s
-
220
-
nC
Notes:
1: Repetitive Rating: Pulse width limited by maximum junction temperature
2: L = 16.5mH, IAS = 10A, VDD = 50V, RG = 25, Starting TJ = 25°C
3: ISD 10A, di/dt 200A/s, VDD BVDSS, Starting TJ = 25°C
4: Essentially Independent of Operating Temperature Typical Characteristics
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2
FQB10N50CF — N-Channel QFET® FRFET® MOSFET
Package Marking and Ordering Information TC = 25oC unless otherwise noted
Figure 2. Transfer Characteristics
50
VGS = 15.0 V
10.0 V
8.0 V
7.0 V
6.5 V
6.0 V
5.5 V
5.0 V
10
ID,Drain Current[A]
ID,Drain Current[A]
Figure 1. On-Region Characteristics
30
10
o
150 C
o
-55 C
o
25 C
1
*Notes:
1. 250s Pulse Test
*Notes:
1. VDS = 20V
2. 250s Pulse Test
o
2. TC = 25 C
0.1
10
VDS,Drain-Source Voltage[V]
30
2
3
4
5
6
7
VGS,Gate-Source Voltage[V]
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperature
1.2
100
1.0
0.8
VGS = 10V
0.6
VGS = 20V
0.4
10
o
150 C
o
25 C
1
*Notes:
1. VGS = 0V
o
0.2
*Note: TJ = 25 C
0
5
10
15
20
ID, Drain Current [A]
25
0.1
0.0
30
Figure 5. Capacitance Characteristics
3000
Ciss
2500
2000
Coss
*Note:
1. VGS = 0V
2. f = 1MHz
Crss
500
0
0.1
1
10
VDS, Drain-Source Voltage [V]
1.5
10
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
1500
1000
2. 250s Pulse Test
0.5
1.0
VSD, Body Diode Forward Voltage [V]
Figure 6. Gate Charge Characteristics
30
VGS, Gate-Source Voltage [V]
3500
Capacitances [pF]
8
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
IS, Reverse Drain Current [A]
RDS(ON) [],
Drain-Source On-Resistance
1
0.8 1
VDS = 100V
VDS = 250V
VDS = 400V
8
6
4
2
0
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3
*Note: ID = 10A
0
10
20
30
40
Qg, Total Gate Charge [nC]
50
FQB10N50CF — N-Channel QFET® FRFET® MOSFET
Typical Performance Characteristics
Figure 7. Breakdown Voltage Variation
vs. Temperature
Figure 8. On-Resistance Variation
vs. Temperature
3.0
RDS(on), [Normalized]
Drain-Source On-Resistance
BVDSS, [Normalized]
Drain-Source Breakdown Voltage
1.10
1.05
1.00
0.95
*Notes:
1. VGS = 0V
2. ID = 250A
0.90
-100
-50
0
50
100
o
TJ, Junction Temperature [ C]
2.5
2.0
1.5
1.0
*Notes:
1. VGS = 10V
2. ID = 5A
0.5
0.0
-100
150
Figure 9. Maximum Safe Operating Area
-50
0
50
100
150
o
TJ, Junction Temperature [ C]
200
Figure 10. Maximum Drain Current
vs. Case Temperature
12
100
50s
10
ID, Drain Current [A]
1ms
10ms
1
Operation in This Area
is Limited by R DS(on)
DC
*Notes:
0.1
o
1. TC = 25 C
1
10
100
VDS, Drain-Source Voltage [V]
6
4
0
25
600
50
75
100
125
o
TC, Case Temperature [ C]
Figure 11. Transient Thermal Response Curve
1
0.5
JC
0.01
8
2
o
2. TJ = 150 C
3. Single Pulse
o
ZThermal
Response
JC(t), Thermal
Response
[Z [ C/W]
]
ID, Drain Current [A]
100s
10
0.2
0.1
0.1
PDM
0.05
t1
0.02
0.01
0.01
Single pulse
1E-3
-5
10
t2
*Notes:
o
1. ZJC(t) = 0.87 C/W Max.
2. Duty Factor, D= t1/t2
3. TJM - TC = PDM * ZJC(t)
-4
10
-3
-2
-1
10
10
10
Rectangular
Pulse
Duration
t , Square Wave
Pulse
Duration[sec]
[sec]
1
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4
0
10
1
10
150
FQB10N50CF — N-Channel QFET® FRFET® MOSFET
Typical Performance Characteristics (Continued)
FQB10N50CF — N-Channel QFET® FRFET® MOSFET
Figure 12. Gate Charge Test Circuit & Waveform
VGS
Same Type
as DUT
50KΩ
200nF
12V
Qg
10V
300nF
VDS
VGS
Qgs
Qgd
DUT
IG = const.
3mA
Charge
Figure 13. Resistive Switching Test Circuit & Waveforms
VDS
RG
RL
VDS
90%
VDD
VGS
VGS
DUT
V
10V
GS
10%
td(on)
tr
td(off)
t on
tf
t off
Figure 14. Unclamped Inductive Switching Test Circuit & Waveforms
BVDSS
1
EAS = ---- L IAS2 -------------------2
BVDSS - VDD
L
VDS
BVDSS
IAS
ID
RG
V
10V
GS
GS
VDD
DUT
ID (t)
VDS (t)
VDD
tp
tp
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5
Time
DUT
+
VDS
_
I SD
L
Driver
RG
VGS
VGS
( Driver )
Same Type
as DUT
VDD
• dv/dt controlled by RG
• ISD controlled by pulse period
Gate Pulse Width
D = -------------------------Gate Pulse Period
10V
IFM , Body Diode Forward Current
I SD
( DUT )
di/dt
IRM
Body Diode Reverse Current
VDS
( DUT )
Body Diode Recovery dv/dt
VSD
Body Diode
Forward Voltage Drop
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6
VDD
FQB10N50CF — N-Channel QFET® FRFET® MOSFET
Figure 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms
FQB10N50CF — N-Channel QFET® FRFET® MOSFET
Mechanical Dimensions
TO-263 2L (D2PAK)
Figure 16. 2LD,TO263, Surface Mount
Package drawings are provided as a service to customers considering ON Semiconductor components. Drawings may change in
any manner without notice. Please note the revision and/or date on the drawing and contact a ON Semiconductor representative to
verify or obtain the most recent revision. Package specifications do not expand the terms of ON Semiconductor’s worldwide terms
and conditions, specif-ically the warranty therein, which covers ON Semiconductor products.
Dimension in Millimeters
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ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
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