FQB22P10TM

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ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. FQB22P10 P-Channel QFET® MOSFET -100 V, -22 A, 125 mΩ Features Description This P-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, audio amplifier, DC motor control, and variable switching power applications. • -22 A, -100 V, RDS(on) = 125 mΩ (Max) @VGS = -10 V, ID = -11 A • Low Gate Charge (Typ. 40 nC) • Low Crss (Typ. 160 pF) • 100% Avalanche Tested • 175°C Maximum Junction Temperature Rating S D G G D2-PAK S D Absolute Maximum Ratings Symbol VDSS TC = 25°C unless otherwise noted Parameter Drain-Source Voltage - Continuous (TC = 25°C) Drain Current ID FQB22P10TM -100 Unit V - Continuous (TC = 100°C) -22 A -15.6 A -88 A IDM Drain Current VGSS Gate-Source Voltage EAS Single Pulsed Avalanche Energy (Note 2) IAR Avalanche Current (Note 1) -22 A EAR Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TA = 25°C) * (Note 1) 12.5 -6.0 3.75 mJ V/ns W 125 0.83 -55 to +175 W W/°C °C 300 °C dv/dt PD - Pulsed (Note 1) (Note 3) Power Dissipation (TC = 25°C) TJ, TSTG TL - Derate above 25°C Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds ±30 V 710 mJ Thermal Characteristics Symbol RJC RJA FQB22P10TM Parameter Thermal Resistance, Junction to Case, Max. 1.2 Thermal Resistance, Junction to Ambient (minimum pad of 2 oz copper), Max. 62.5 Thermal Resistance, Junction to Ambient (* 1 in2 pad of 2 oz copper), Max. ©2000 Fairchild Semiconductor Corporation FQB22P10 Rev. C3 1 Unit oC/W 40 www.fairchildsemi.com FQB22P10 — P-Channel QFET® MOSFET October 2013 Device Marking FQB22P10 Device Electrical Characteristics Symbol Package D2-PAK FQB22P10TM Reel Size 330mm Tape Width 24mm Quantity 800 TC = 25°C unless otherwise noted Parameter Test Conditions Min Typ Max Unit -100 -- -- V -- V/°C Off Characteristics BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = -250 µA ∆BVDSS / ∆TJ Breakdown Voltage Temperature Coefficient ID = -250 µA, Referenced to 25°C -- -0.1 VDS = -100 V, VGS = 0 V -- -- -1 µA VDS = -80 V, TC = 125°C -- -- -10 µA IDSS Zero Gate Voltage Drain Current IGSSF Gate-Body Leakage Current, Forward VGS = -30 V, VDS = 0 V -- -- -100 nA IGSSR Gate-Body Leakage Current, Reverse VGS = 30 V, VDS = 0 V -- -- 100 nA -2.0 -- -4.0 V On Characteristics VGS(th) Gate Threshold Voltage VDS = VGS, ID = -250 µA RDS(on) Static Drain-Source On-Resistance VGS = -10 V, ID = -11 A -- 0.096 0.125 Ω gFS Forward Transconductance VDS = -40 V, ID = -11 A -- 13.5 -- S VDS = -25 V, VGS = 0 V, f = 1.0 MHz -- 1170 1500 pF -- 460 600 pF -- 160 200 pF Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Switching Characteristics td(on) Turn-On Delay Time tr Turn-On Rise Time td(off) Turn-Off Delay Time tf Turn-Off Fall Time Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge VDD = -50 V, ID = -22 A, RG = 25 Ω (Note 4) VDS = -80 V, ID = -22 A, VGS = -10 V (Note 4) -- 17 45 ns -- 170 350 ns -- 60 130 ns -- 110 230 ns -- 40 50 nC -- 7.0 -- nC -- 21 -- nC Drain-Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain-Source Diode Forward Current -- -- -22 A ISM -- -- -88 A -- -- -4.0 V VGS = 0 V, IS = -22 A, dIF / dt = 100 A/µs -- 110 -- ns -- 0.6 -- µC VSD Maximum Pulsed Drain-Source Diode Forward Current VGS = 0 V, IS = -22 A Drain-Source Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge Notes: 1. Repetitive Rating : Pulse width limited by maximum junction temperature 2. L = 2.2mH, IAS = -22A, VDD = -25V, RG = 25 Ω, Starting TJ = 25°C 3. ISD ≤ -22A, di/dt ≤ 300A/µs, VDD ≤ BVDSS, Starting TJ = 25°C 4. Essentially independent of operating temperature ©2000 Fairchild Semiconductor Corporation FQB22P10 Rev. C3 2 www.fairchildsemi.com FQB22P10 — P-Channel QFET® MOSFET Package Marking and Ordering Information VGS -15.0 V -10.0 V -8.0 V -7.0 V -6.0 V -5.5 V -5.0 V Bottom : .5 V 1 10 -ID , Drain Current [A] -ID, Drain Current [A] Top : 1 10 175℃ 25℃ 0 10 -55℃ 0 10 ※ Notes : 1. VDS = -40V 2. 250μ s Pulse Test ※ Notes : 1. 250μ s Pulse Test 2. TC = 25℃ -1 -1 0 10 10 1 10 2 10 4 6 8 10 -VGS , Gate-Source Voltage [V] -VDS, Drain-Source Voltage [V] Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics 0.5 -I DR , Reverse Drain Current [A] RDS(on) [ Ω], Drain-Source On-Resistance 0.4 VGS = - 10V 0.3 VGS = - 20V 0.2 0.1 1 10 0 10 175℃ 25℃ ※ Notes : 1. VGS = 0V 2. 250μ s Pulse Test ※ Note : TJ = 25℃ -1 0.0 0 10 20 30 40 50 60 70 80 90 10 100 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 -VSD , Source-Drain Voltage [V] Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperature 3500 12 Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd 3000 -V GS , Gate-Source Voltage [V] VDS = -50V 2500 Coss ※ Notes : 1. VGS = 0 V 2. f = 1 MHz 2000 1500 Crss 1000 500 0 -1 10 VDS = -20V 10 Ciss Capacitance [pF] 0.2 -ID , Drain Current [A] VDS = -80V 8 6 4 2 ※ Note : ID = -22 A 0 0 10 0 1 10 20 30 40 50 QG, Total Gate Charge [nC] -VDS, Drain-Source Voltage [V] Figure 5. Capacitance Characteristics ©2000 Fairchild Semiconductor Corporation FQB22P10 Rev. C3 10 Figure 6. Gate Charge Characteristics 3 www.fairchildsemi.com FQB22P10 — P-Channel QFET® MOSFET Typical Characteristics (Continued) 2.5 2.0 1.1 RDS(ON) , (Normalized) Drain-Source On-Resistance -BV DSS , (Normalized) Drain-Source Breakdown Voltage 1.2 1.0 ※ Notes : 1. VGS = 0 V 2. ID = -250 μ A 0.9 0.8 -100 -50 0 50 100 150 1.5 1.0 ※ Notes : 1. VGS = -10 V 2. ID = -11 A 0.5 0.0 -100 200 -50 0 50 100 150 200 o o TJ, Junction Temperature [ C] TJ, Junction Temperature [ C] Figure 7. Breakdown Voltage Variation vs. Temperature Figure 8. On-Resistance Variation vs. Temperature 25 Operation in This Area is Limited by R DS(on) 2 10 20 1 ms -I D, Drain Current [A] -I D, Drain Current [A] 100 µs 10 ms 1 10 DC 0 10 ※ Notes : 15 10 5 o 1. TC = 25 C o 2. TJ = 175 C 3. Single Pulse -1 10 0 1 10 0 25 2 10 10 50 ZJC(t), Thermal Response [oC/W] Figure 9. Maximum Safe Operating Area 10 75 100 125 150 175 TC, Case Temperature [℃] -VDS, Drain-Source Voltage [V] Figure 10. Maximum Drain Current vs. Case Temperature 0 D = 0 .5 ※ N o te s : 1 . Z θ J C ( t) = 1 .2 ℃ /W M a x . 2 . D u ty F a c to r , D = t 1 /t 2 3 . T J M - T C = P D M * Z θ J C ( t) 0 .2 0 .1 10 -1 0 .0 5 PDM 0 .0 2 0 .0 1 t1 s i n g l e p u ls e 10 t2 -2 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 t 1 , S q u a r e W a v e P u ls e D u r a t io n [ s e c ] Figure 11. Transient Thermal Response Curve ©2000 Fairchild Semiconductor Corporation FQB22P10 Rev. C3 4 www.fairchildsemi.com FQB22P10 — P-Channel QFET® MOSFET Typical Characteristics ® FQB22P10 — P-Channel QFET MOSFET Figure 12. Gate Charge Test Circuit & Waveform VGS Same Type as DUT 50KΩ 200nF 12V Qg -10V 300nF VDS VGS Qgs Qgd DUT -3mA IG = const. Charge Figure 13. Resistive Switching Test Circuit & Waveforms VDS RG RL t on td(on) VDD VGS VGS t off tr td(off) tf 10% DUT VGS -10V VDS 90% Figure 14. Unclamped Inductive Switching Test Circuit & Waveforms BVDSS 1 EAS = ---- L IAS2 -------------------2 BVDSS - VDD L VDS tp ID RG VGS -10V VDD VDD VDS (t) ID (t) DUT IAS BVDSS tp ©2000 Fairchild Semiconductor Corporation FQB22P10 Rev. C3 Time 5 www.fairchildsemi.com + VDS DUT _ I SD L Driver RG VGS VGS ( Driver ) I SD ( DUT ) Compliment of DUT (N-Channel) VDD • dv/dt controlled by RG • ISD controlled by pulse period Gate Pulse Width D = -------------------------Gate Pulse Period 10V Body Diode Reverse Current IRM di/dt IFM , Body Diode Forward Current VDS ( DUT ) VSD Body Diode Forward Voltage Drop VDD Body Diode Recovery dv/dt ©2000 Fairchild Semiconductor Corporation FQB22P10 Rev. C3 6 www.fairchildsemi.com FQB22P10 — P-Channel QFET® MOSFET Figure 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms 10.67 9.65 10.67 -A1.68 1.00 4 4 9.45 9.65 8.38 10.00 1.78 MAX 2 3 1 1.78 1.14 0.99 0.51 (2.12) 2 0.25 MAX PLASTIC BODY STUB 3.80 3 1 1.05 0.25 M 5.08 B AM LAND PATTERN RECOMMENDATION UNLESS NOTED, ALL DIMS TYPICAL 5.08 FRONT VIEW - DIODE PRODUCTS VERSION ALTERNATIVE SUPPLIER DETAIL 6.22 MIN 4 -B- 4.83 4.06 1.65 1.14 4 6.86 MIN 15.88 14.61 SEE DETAIL A 2 2 3 1 3 1 BACK VIEW - DIODE PRODUCTS VERSION ALTERNATIVE SUPPLIER DETAIL GAGE PLANE 0.74 0.33 0.25 2.79 1.78 0.25 MAX (5.38) SEATING PLANE SCALE: 2X 0.10 NOTES: UNLESS OTHERWISE SPECIFIED A) ALL DIMENSIONS ARE IN MILLIMETERS. B) REFERENCE JEDEC, TO-263, VARIATION AB. C) DIMENSIONING AND TOLERANCING PER DIMENSIONING AND TOLERANCING PER ASME Y14.5 - 2009. D) LOCATION OF THE PIN HOLE MAY VARY (LOWER LEFT CORNER, LOWER CENTER AND CENTER OF THE PACKAGE). E) LANDPATTERN RECOMMENDATION PER IPC TO254P1524X482-3N B F) FILENAME: TO263A02REV8 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. 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