FQD2P40TM

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ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. FQD2P40 P-Channel QFET® MOSFET -400 V, -1.56 A, 6.5 Ω Description Features This P-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, audio amplifier, DC motor control, and variable switching power applications.. • -1.56 A, -400 V, RDS(on) = 6.5 Ω (Max.) @ VGS = -10 V, ID = -0.78 A • Low Gate Charge (Typ. 10 nC) • Low Crss (Typ. 6.5 pF) • 100% Avalanche Tested • RoHS Compliant S D G S G D-PAK D Absolute Maximum Ratings Symbol VDSS ID TC = 25°C unless otherwise noted. Parameter Drain-Source Voltage - Continuous (TC = 25°C) Drain Current - Continuous (TC = 100°C) IDM Drain Current VGSS Gate-Source Voltage EAS IAR EAR dv/dt PD (Note 1) Unit V -1.56 A -0.98 A -6.24 A ± 30 V Single Pulsed Avalanche Energy (Note 2) 120 mJ Avalanche Current (Note 1) -1.56 A Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TA = 25°C) * (Note 1) 3.8 -4.5 2.5 mJ V/ns W 38 0.3 -55 to +150 W W/°C °C 300 °C (Note 3) Power Dissipation (TC = 25°C) TJ, TSTG TL - Pulsed FQD2P40TM -400 - Derate above 25°C Operating and Storage Temperature Range Maximum lead temperature for soldering, 1/8” from case for 5 seconds Thermal Characteristics Symbol RJC RJA Parameter FQD2P40TM 3.29 Thermal Resistance, Junction to Case, Max. Thermal Resistance, Junction to Ambient (Minimum Pad of 2-oz Copper), Max. 2 Thermal Resistance, Junction to Ambient (*1 in Pad of 2-oz Copper), Max. ©2008 Fairchild Semiconductor Corporation FQD2P40 Rev. 1.3 Unit 1 110 oC/W 50 www.fairchildsemi.com FQD2P40 — P-Channel QFET® MOSFET May 2015 Part Number FQD2P40TM Electrical Characteristics Symbol Package D-PAK Top Mark FQD2P40 Packing Method Tape and Reel Reel Size 330 mm Tape Width 16 mm Quantity 2500 units TC = 25°C unless otherwise noted. Parameter Test Conditions Min. Typ. Max. Unit -400 -- -- V -- - -- V/°C Off Characteristics BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = -250 µA ∆BVDSS / ∆TJ Breakdown Voltage Temperature Coefficient ID = -250 µA, Referenced to 25°C IDSS Zero Gate Voltage Drain Current VDS = -400 V, VGS = 0 V -- -- -1 µA VDS = -320 V, TC = 125°C -- -- -10 µA IGSSF Gate-Body Leakage Current, Forward VGS = -30 V, VDS = 0 V -- -- -100 nA IGSSR Gate-Body Leakage Current, Reverse VGS = 30 V, VDS = 0 V -- -- 100 nA On Characteristics VGS(th) Gate Threshold Voltage VDS = VGS, ID = -250 µA -3.0 -- -5.0 V RDS(on) Static Drain-Source On-Resistance VGS = -10 V, ID = -0.78 A -- 5.0 6.5 Ω gFS Forward Transconductance VDS = -50 V, ID = -0.78 A -- 1.26 -- S VDS = -25 V, VGS = 0 V, f = 1.0 MHz -- 270 350 pF -- 45 60 pF -- 6.5 8.5 pF -- 9 30 ns -- 33 75 ns -- 22 55 ns -- 25 60 ns -- 10 13 nC -- 2.1 -- nC -- 5.5 -- nC Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Switching Characteristics td(on) Turn-On Delay Time tr Turn-On Rise Time td(off) Turn-Off Delay Time tf Turn-Off Fall Time Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge VDD = -200 V, ID = -2.0 A, RG = 25 Ω (Note 4) VDS = -320 V, ID = -2.0 A, VGS = -10 V (Note 4) Drain-Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain-Source Diode Forward Current -- -- -1.56 A ISM -- -- -6.24 A VSD Maximum Pulsed Drain-Source Diode Forward Current VGS = 0 V, IS = -1.56 A Drain-Source Diode Forward Voltage -- -- -5.0 V trr Reverse Recovery Time -- 250 -- ns Qrr Reverse Recovery Charge VGS = 0 V, IS = -2.0 A, dIF / dt = 100 A/µs -- 0.85 -- µC Notes: 1. Repetitive rating : pulse-width limited by maximum junction temperature. 2. L = 86 mH, IAS = -1.56 A, VDD = -50 V, RG = 25 Ω, starting TJ = 25°C. 3. ISD ≤ -2.0 A, di/dt ≤ 200 A/µs, VDD ≤ BVDSS, starting TJ = 25°C. 4. Essentially independent of operating temperature. ©2008 Fairchild Semiconductor Corporation FQD2P40 Rev. 1.3 2 www.fairchildsemi.com FQD2P40 — P-Channel QFET® MOSFET Package Marking and Ordering Information VGS -15.0 V -10.0 V -8.0 V -7.0 V -6.5 V -6.0 V Bottom : -5.5 V 0 -I D, Drain Current [A] 10 -I D , Drain Current [A] Top : -1 10 ※ Notes : 1. 250μs Pulse Test 2. TC = 25℃ 150℃ 25℃ ※ Notes : 1. VDS = -50V 2. 250μs Pulse Test -55℃ -2 10 0 10 -1 -1 0 10 10 1 10 10 2 4 6 8 10 -VGS , Gate-Source Voltage [V] -VDS, Drain-Source Voltage [V] Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics 10 -I DR , Reverse Drain Current [A] RDS(on) [ Ω ], Drain-Source On-Resistance 12 VGS = - 10V VGS = - 20V 8 6 ※ Note : TJ = 25℃ 4 0 10 150℃ ※ Notes : 1. VGS = 0V 2. 250μs Pulse Test -1 0 1 2 3 4 5 10 6 0.0 0.5 -ID , Drain Current [A] 600 300 Coss ※ Notes : 1. VGS = 0 V 2. f = 1 MHz 200 Crss 0 -1 10 0 10 3.0 VDS = -200V 10 VDS = -320V 8 6 4 2 ※ Note : ID = -2.0 A 0 1 -VDS, Drain-Source Voltage [V] 0 2 4 6 8 10 12 QG, Total Gate Charge [nC] Figure 5. Capacitance Characteristics ©2008 Fairchild Semiconductor Corporation FQD2P40 Rev. 1.3 2.5 VDS = -80V 10 Ciss 100 2.0 12 -V GS , Gate-Source Voltage [V] 400 1.5 Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperature Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd 500 1.0 -VSD , Source-Drain Voltage [V] Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage Capacitance [pF] 25℃ Figure 6. Gate Charge Characteristics 3 www.fairchildsemi.com FQD2P40 — P-Channel QFET® MOSFET Typical Characteristics (Continued) 2.5 2.0 1.1 RDS(ON) , (Normalized) Drain-Source On-Resistance -BV DSS , (Normalized) Drain-Source Breakdown Voltage 1.2 1.0 ※ Notes : 1. VGS = 0 V 2. ID = -250 μA 0.9 0.8 -100 -50 0 50 100 150 1.5 1.0 ※ Notes : 1. VGS = -10 V 2. ID = -1.0 A 0.5 0.0 -100 200 -50 0 50 100 150 200 o o TJ, Junction Temperature [ C] TJ, Junction Temperature [ C] Figure 7. Breakdown Voltage Variation vs. Temperature Figure 8. On-Resistance Variation vs. Temperature 1.8 Operation in This Area is Limited by R DS(on) 1 10 1.5 1 ms -I D, Drain Current [A] -I D, Drain Current [A] 100 µs 10 ms 0 10 DC -1 10 ※ Notes : o 1. TC = 25 C 1.2 0.9 0.6 0.3 o 2. TJ = 150 C 3. Single Pulse -2 10 0 1 10 2 10 0.0 25 3 10 10 50 Figure 9. Maximum Safe Operating Area ZJC(t), Thermal Response [oC/W] 75 100 125 150 TC, Case Temperature [℃] -VDS, Drain-Source Voltage [V] Figure 10. Maximum Drain Current vs. Case Temperature D = 0 .5 10 0 ※ N o te s : 1 . Z θ J C( t) = 3 .2 9 ℃ /W M a x . 2 . D u ty F a c to r , D = t1 /t2 3 . T JM - T C = P D M * Z θ J C( t) 0 .2 0 .1 0 .0 5 10 PDM 0 .0 2 -1 0 .0 1 t1 s in g le p u ls e 10 -5 10 -4 10 t2 -3 10 -2 10 -1 10 0 10 1 t 1 , S q u a r e W a v e P u ls e D u r a t io n [ s e c ] Figure 11. Transient Thermal Response Curve ©2008 Fairchild Semiconductor Corporation FQD2P40 Rev. 1.3 4 www.fairchildsemi.com FQD2P40 — P-Channel QFET® MOSFET Typical Characteristics FQD2P40 — P-Channel QFET® MOSFET 50KΩ 50K Ω 200nF 200nF 12V VGS Same Same T Ty ype as DUT DUT Qg 300nF 300nF VDS VGS Qgs Qgd DUT DUT IG = const. Charg Ch arge e Figure 12. Gate Charge Test Circuit & Waveform VDS RG RL t on td(on d( on)) VDD VGS VGS t of offf tr td(of d( offf) tf 10 10% % DUT VGS VDS 90% Figure 13. Resistive Switching Test Circuit & Waveforms VDS BVDS DSS S 1 -----------------------------EAS = ---- L IAS2 ------2 BVDS DSS S - VDD L tp ID RG VGS Tim Ti me VDD VDD VDS (t) (t)) ID (t DUT DUT IAS BVDSS tp Figure 14. Unclamped Inductive Switching Test Circuit & Waveforms ©2008 Fairchild Semiconductor Corporation FQD2P40 Rev. 1.3 5 www.fairchildsemi.com FQD2P40 — P-Channel QFET® MOSFET + VDS DUT _ I SD L Driver Driv er RG VGS VGS ( Driv Driver er ) I SD ( DUT ) Compliment of DUT Comp (N-C (N-Channel hannel)) VDD • dv/dt cont ntrrolled by RG • ISD con onttrol ollled by pu pullse pe perriod Gate Pul ulsse W idth D = -------------------------te Pu Gate Ga Pullse Pe Perriod 10 10V V Body Bo dy Diod ode e Reverse Curren entt IRM di//dt di IFM , Bo Body dy Diod ode e For orw ward Curren entt VDS ( DUT ) VSD Body Bo dy Diode For Forw ward Vol olttag age e Drop Drop VDD Body Bo dy Di Diod ode e Recov cove ery dv dv/d /dtt Figure 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms ©2008 Fairchild Semiconductor Corporation FQD2P40 Rev. 1.3 6 www.fairchildsemi.com ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. 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