FQD3P50TM_F085

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Other names and brands may be claimed as the property of others. FQD3P50TM-F085 500V P-Channel MOSFET FQD3P50TM-F085 500V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect transistors are produced using ON Semiconductor’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for electronic lamp ballast based on complimentary half bridge. • • • • • • • • -2.1A, -500V, RDS(on) = 4.9Ω @VGS = -10 V Low gate charge ( typical 18 nC) Low Crss ( typical 9.5 pF) Fast switching 100% avalanche tested Improved dv/dt capability Qualified to AEC Q101 RoHS Compliant S ! D ● ● G! ▶ ▲ G Absolute Maximum Ratings Symbol VDSS ID ● D-PAK S ! TC = 25°C unless otherwise noted Parameter D Drain-Source Voltage - Continuous (TC = 25°C) Drain Current - Continuous (TC = 100°C) IDM Drain Current VGSS Gate-Source Voltage - Pulsed Units V FQD3P50TM-F085 -500 (Note 1) -2.1 A -1.33 A -8.4 A ± 30 V mJ EAS Single Pulsed Avalanche Energy (Note 2) 250 IAR Avalanche Current (Note 1) -2.1 A EAR Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TA = 25°C) * (Note 1) 5.0 -4.5 2.5 mJ V/ns W 50 0.4 -55 to +150 W W/°C °C 300 °C dv/dt PD TJ, TSTG TL (Note 3) Power Dissipation (TC = 25°C) - Derate above 25°C Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds Thermal Characteristics Symbol RθJC Parameter Thermal Resistance, Junction-to-Case Typ -- Max 2.5 Units °C/W RθJA Thermal Resistance, Junction-to-Ambient * -- 50 °C/W RθJA Thermal Resistance, Junction-to-Ambient -- 110 °C/W * When mounted on the minimum pad size recommended (PCB Mount) ©2010 Semiconductor Components Industries, LLC. September-2017, Rev. 3 Publication Order Number: FQD3P50TM-F085/D Symbol TC = 25°C unless otherwise noted Parameter Test Conditions Min Typ Max Units -500 -- -- V -- V/°C Off Characteristics BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = -250 µA ∆BVDSS ∆TJ / Breakdown Voltage Temperature Coefficient ID = -250 µA, Referenced to 25°C -- 0.42 IDSS IGSSF IGSSR VDS = -500 V, VGS = 0 V -- -- -1 µA VDS = -400 V, TC = 125°C -- -- -10 µA Gate-Body Leakage Current, Forward VGS = -30 V, VDS = 0 V -- -- -100 nA Gate-Body Leakage Current, Reverse VGS = 30 V, VDS = 0 V -- -- 100 nA Zero Gate Voltage Drain Current On Characteristics VGS(th) Gate Threshold Voltage VDS = VGS, ID = -250 µA -3.0 -- -5.0 V RDS(on) Static Drain-Source On-Resistance VGS = -10 V, ID = -1.05 A -- 3.9 4.9 Ω gFS Forward Transconductance VDS = -50 V, ID = -1.05 A -- 2.1 -- S -- 510 660 pF -- 70 90 pF -- 9.5 12 pF -- 12 35 ns -- 56 120 ns -- 35 80 ns -- 45 100 ns -- 18 23 nC (Note 4) Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance VDS = -25 V, VGS = 0 V, f = 1.0 MHz Switching Characteristics td(on) Turn-On Delay Time tr Turn-On Rise Time td(off) Turn-Off Delay Time tf Turn-Off Fall Time Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge VDD = -250 V, ID = -2.7 A, RG = 25 Ω (Note 4, 5) VDS = -400 V, ID = -2.7 A, VGS = -10 V (Note 4, 5) -- 3.6 -- nC -- 9.2 -- nC Drain-Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain-Source Diode Forward Current -- -- -2.1 A ISM -- -- -8.4 A VSD Maximum Pulsed Drain-Source Diode Forward Current VGS = 0 V, IS = -2.1 A Drain-Source Diode Forward Voltage -- -- -5.0 V trr Reverse Recovery Time -- 270 -- ns Qrr Reverse Recovery Charge -- 1.5 -- µC VGS = 0 V, IS = -2.7 A, dIF / dt = 100 A/µs Notes: 1. Repetitive Rating : Pulse width limited by maximum junction temperature 2. L = 102mH, IAS = -2.1A, VDD = -50V, RG = 25 Ω, Starting TJ = 25°C 3. ISD ≤ -2.7A, di/dt ≤ 200A/µs, VDD ≤ BVDSS, Starting TJ = 25°C 4. Pulse Test : Pulse width ≤ 300µs, Duty cycle ≤ 2% 5. Essentially independent of operating temperature www.onsemi.com 2 (Note 4) FQD3P50TM-F085 500V P-Channel MOSFET Elerical Characteristics VGS -15.0 V -10.0 V -8.0 V -7.0 V -6.5 V -6.0 V Bottom : -5.5 V -I D, Drain Current [A] 0 10 -I D , Drain Current [A] Top : -1 10 ※ Notes : 1. 250μs Pulse Test 2. TC = 25℃ -2 10 0 10 150℃ 25℃ ※ Notes : 1. VDS = -50V 2. 250μs Pulse Test -55℃ -1 -1 0 10 10 1 10 10 2 4 6 8 10 -VGS , Gate-Source Voltage [V] -VDS, Drain-Source Voltage [V] Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics 8 6 -I DR , Reverse Drain Current [A] VGS = - 10V VGS = - 20V 5 4 3 2 ※ Note : TJ = 25℃ 150℃ 25℃ ※ Notes : 1. VGS = 0V 2. 250μs Pulse Test -1 0 2 4 6 8 10 0.0 0.5 1.0 1.5 2.0 2.5 3.0 -ID , Drain Current [A] -VSD , Source-Drain Voltage [V] Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperature 1200 12 Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd 1000 800 Capacitance [pF] 0 10 Ciss 600 Coss 400 ※ Notes : 1. VGS = 0 V 2. f = 1 MHz Crss 200 0 -1 10 0 10 10 -V GS , Gate-Source Voltage [V] RDS(on) [ Ω ], Drain-Source On-Resistance 7 8 10 VDS = -400V 6 4 2 ※ Note : ID = -2.7 A 0 1 VDS = -100V VDS = -250V 0 2 4 6 8 10 12 14 16 18 20 QG, Total Gate Charge [nC] VDS, Drain-Source Voltage [V] Figure 5. Capacitance Characteristics www.onsemi.com 3 Figure 6. Gate Charge Characteristics FQD3P50TM-F085 500V P-Channel MOSFET Typical Characteristics (Continued) 2.5 2.0 1.1 RDS(ON) , (Normalized) Drain-Source On-Resistance -BV DSS , (Normalized) Drain-Source Breakdown Voltage 1.2 1.0 ※ Notes : 1. VGS = 0 V 2. ID = -250 μA 0.9 0.8 -100 -50 0 100 50 150 1.5 1.0 ※ Notes : 1. VGS = -10 V 2. ID = -1.35 A 0.5 0.0 -100 200 -50 o 0 50 100 150 200 o TJ, Junction Temperature [ C] TJ, Junction Temperature [ C] Figure 7. Breakdown Voltage Variation vs. Temperature Figure 8. On-Resistance Variation vs. Temperature 2.5 Operation in This Area is Limited by R DS(on) 2.0 1 -I D, Drain Current [A] 100 µs 1 ms 10 ms 0 10 DC -1 10 ※ Notes : 1.5 1.0 0.5 o 1. TC = 25 C o 2. TJ = 150 C 3. Single Pulse -2 10 0 1 10 2 10 0.0 25 3 10 10 50 ※ N o te s : 1 . Z θ J C ( t ) = 2 . 5 ℃ /W M a x . 2 . D u ty F a c t o r , D = t 1 /t 2 3 . T J M - T C = P D M * Z θ J C( t ) 0 .2 0 .0 5 -1 0 .0 2 0 .0 1 PDM t1 s in g le p u ls e 10 125 Figure 10. Maximum Drain Current vs. Case Temperature 0 .1 10 100 D = 0 .5 0 θ JC ( t) , T h e r m a l R e s p o n s e Figure 9. Maximum Safe Operating Area 10 75 TC, Case Temperature [℃] -VDS, Drain-Source Voltage [V] Z -I D, Drain Current [A] 10 t2 -2 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 t 1 , S q u a r e W a v e P u ls e D u r a t io n [ s e c ] Figure 11. Transient Thermal Response Curve www.onsemi.com 4 10 1 150 FQD3P50TM-F085 500V P-Channel MOSFET Typical Characteristics FQD3P50TM-F085 500V P-Channel MOSFET Gate Charge Test Circuit & Waveform 50KΩ 200nF 12V VGS Same Type as DUT Qg -10V 300nF VDS VGS Qgs Qgd DUT -3mA Charge Resistive Switching Test Circuit & Waveforms VDS RG RL t on td(on) VDD VGS VGS t off tr td(off) tf 10% DUT -10V VDS 90% Unclamped Inductive Switching Test Circuit & Waveforms VDS BVDSS 1 EAS = ---- L IAS2 -------------------2 BVDSS - VDD L tp ID RG VDD DUT -10V tp VDD VDS (t) ID (t) IAS BVDSS www.onsemi.com 5 Time + VDS DUT _ I SD L Driver RG VGS VGS ( Driver ) I SD ( DUT ) Compliment of DUT (N-Channel) VDD • dv/dt controlled by RG • ISD controlled by pulse period Gate Pulse Width D = -------------------------Gate Pulse Period 10V Body Diode Reverse Current IRM di/dt IFM , Body Diode Forward Current VDS ( DUT ) VSD Body Diode Forward Voltage Drop Body Diode Recovery dv/dt www.onsemi.com 6 VDD FQD3P50TM-F085 500V P-Channel MOSFET Peak Diode Recovery dv/dt Test Circuit & Waveforms TO-252 (DPAK) (FS PKG Code 36) 1:1 Scale 1:1 on letter size paper Dimensions shown below are in: millimeters Part Weight per unit (gram): 0.33 www.onsemi.com 7 FQD3P50TM-F085 500V P-Channel MOSFET Mechanical Dimensions ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. 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