FQH44N10-F133

MOSFET – N-Channel, QFET) 100 V, 48 A, 39 mW FQH44N10 Description This N−Channel enhancement mode power MOSFET is produced using ON Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on−state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, audio amplifier, DC motor control, and variable switching power applications. www.onsemi.com VDSS RDS(ON) MAX ID MAX 100 V 39 mW @ 10 V 48 A D Features • 48 A, 100 V, RDS(on) = 39 mW (Max.) @ VGS = 10 V, • • • • ID = 24 A Low Gate Charge (Typ. 48 nC) Low Crss (Typ. 85 pF) 100% Avalanche Tested 175°C Maximum Junction Temperature Rating G S POWER MOSFET G D S TO−247−3LD CASE 340CK MARKING DIAGRAM $Y&Z&3&K FQH 44N10 $Y &Z &3 &K FQH44N10 = ON Semiconductor Logo = Assembly Plant Code = Numeric Date Code = Lot Code = Specific Device Code ORDERING INFORMATION See detailed ordering and shipping information on page 2 of this data sheet. © Semiconductor Components Industries, LLC, 2008 March, 2021 − Rev. 5 1 Publication Order Number: FQH44N10/D FQH44N10 ABSOLUTE MAXIMUM RATINGS (TC = 25°C, Unless otherwise noted) Symbol FQH44N10−133 Unit 100 V Continuous (TC = 25°C) 48 A Continuous (TC = 100°C) 34 Pulsed (Note 1) 192 A Gate−Source Voltage ±25 V EAS Single Pulsed Avalanche Energy (Note 2) 530 mJ IAR Avalanche Current (Note 1) 48 A EAR Repetitive Avalanche Energy (Note 1) 18 mJ dv/dt Peak Diode Recovery dv/dt (Note 3) 6.0 V/ns (TC = 25°C) 180 W Derate Above 25°C 1.2 W/°C −55 to +175 °C 300 °C VDSS ID IDM VGSS PD TJ, TSTG TL Parameter Drain−Source Voltage Drain Current Drain Current Power Dissipation Operating and Storage Temperature Range Maximum Lead Temperature for Soldering Purpose 1/8″ from Case for 5 seconds Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Repetitive rating: pulse−width limited by maximum junction temperature. 2. L = 0.345 mH, IAS = 48 A, VDD = 25 V, RG = 25 W, starting TJ = 25°C. 3. ISD ≤ 43.5 A, di/dt ≤ 300 A/ms, VDD ≤ BVDSS, starting TJ = 25°C. THERMAL CHARACTERISTICS Symbol Parameter FQH44N10−133 Unit RqJC Thermal Resistance, Junction to Case, Max. 0.83 _C/W RqCS Thermal Resistance, Case−to−Sink, Typ. 0.24 _C/W RqJA Thermal Resistance, Junction to Ambient, Max. 40 _C/W PACKAGE MARKING AND ORDERING INFORMATION Part Number Top Mark Package Packing Method Reel Size Tape Width Quantity FQH44N10−133 FQH44N10 TO−247 Tube N/A N/A 30 Units www.onsemi.com 2 FQH44N10 ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Parameter Symbol Test Conditions Min. Typ. Max. Unit OFF CHARACTERISTICS BVDSS Drain−Source Breakdown Voltage VGS = 0 V, ID = 250 mA 100 V DBVDSS / DTJ Breakdown Voltage Temperature Coefficient ID = 250 mA, Referenced to 25_C IDSS Zero Gate Voltage Drain Current VDS = 100 V, VGS = 0 V 1 VDS = 80 V, TC = 150_C 10 0.1 V/_C mA IGSSF Gate−Body Leakage Current, Forward VGS = 25 V, VDS = 0 V 100 nA IGSSR Gate−Body Leakage Current, Reverse VGS = −25 V, VDS = 0 V −100 nA 4.0 V 0.039 W ON CHARACTERISTICS VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250 mA RDS(on) Static Drain−Source On−Resistance VGS = 10 V, ID = 24 A 0.03 Forward Transconductance VDS = 40 V, ID = 24 A 31 gFS 2.0 S DYNAMIC CHARACTERISTICS Ciss Input Capacitance Coss Crss VDS = 25 V, VGS = 0 V, f = 1.0 MHz 1400 1800 pF Output Capacitance 425 550 pF Reverse Transfer Capacitance 85 110 pF 19 45 ns 190 390 ns SWITCHING CHARACTERISTICS td(on) Turn-On Delay Time tr Turn-On Rise Time td(off) VDD = 50 V, ID = 43.5 A, Rg = 25 W (Note 4) Turn-Off Delay Time 90 190 ns tf Turn-Off Fall Time 100 210 ns Qg Total Gate Charge 48 62 nC Qgs Gate−Source Charge Qgd Gate−Drain Charge VDS = 80 V, ID = 43.5 A, VGS = 10 V (Note 4) 9.0 nC 24 nC DRAIN−SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS Maximum Continuous Drain−Source Diode Forward Current 48 A ISM Maximum Pulsed Drain−Source Diode Forward Current 192 A VSD Drain−Source Diode Forward Voltage VGS = 0 V, IS = 48A 1.5 V trr Reverse Recovery Time Qrr Reverse Recovery Charge VGS = 0 V, IS = 43.5 A, dIF/dt = 100 A/ms IS 98 ns 360 nC Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 4. Essentially independent of operating temperature typical characteristics. www.onsemi.com 3 FQH44N10 TYPICAL PERFORMANCE CHARACTERISTICS Top VGS : 15.0 V 8.0 V 7.0 V ID, Drain Current (A) ID, Drain Current (A) 102 10.0 V 102 6.0 V 5.5 V 5.0 V Bottom : 4.5 V 101 * Notes : 1. 250 ms Pulse Test 2. TC = 25 °C 100 10−1 100 175°C 101 25°C −55°C 100 * Notes : 1. VDS=40 V 2. 250 ms Pulse Test 10−1 2 101 4 VDS, Drain−Source Voltage (V) 8 10 Figure 2. Transfer Characteristics 0.15 IDR, Reverse Drain Current (A) RDS(ON), Drain−Source On−Resistance (W) Figure 1. On−Region Characteristics 0.12 VGS = 10 V 0.09 VGS = 20 V 0.06 0.03 * Notes : TJ = 25°C 0.00 0 30 60 90 120 150 102 101 100 ID, Drain Current (A) 3500 3000 Ciss Crss 1000 * Notes : 1. VGS = 0 V 2. f = 1 MHz Coss 500 0 10−1 100 0.8 1.0 1.2 1.4 1.6 1.8 2.0 12 2000 1500 0.6 Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperature Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd 2500 0.4 VSD, Source−Drain Voltage (V) VGS, Gate−Source Voltage (V) 4000 * Notes : 1. VDS = 0 V 2. 250 ms Pulse Test 175°C 25°C 10−1 0.2 180 Figure 3. On−Resistance Variation vs. Drain Current and Gate Voltage Capacitance (pF) 6 VGS, Gate−Source Voltage (V) VDS = 80 V 8 6 4 2 0 101 VDS = 50 V 10 VDS, Drain−Source Voltage (V) * Notes : ID = 43.5 A 0 10 20 30 40 50 Qg, Total Gate Charge (nC) Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics www.onsemi.com 4 FQH44N10 RDS(on), (Normalized) Drain−Source On−Resistance BVDSS, (Normalized) Drain−Source Breakdown Voltage TYPICAL PERFORMANCE CHARACTERISTICS (Continued) 1.2 1.1 1.0 0.9 0.8 −100 * Notes: 1. VGS = 0 V 2. ID = 250 mA −50 0 50 100 150 3.0 2.5 2.0 1.5 1.0 * Notes: 1. VGS = 10 V 2. ID = 21.75 A 0.5 0.0 −100 200 −50 0 50 100 TJ, Junction Temperature (5C) TJ, Junction Temperature (5C) Figure 7. Breakdown Voltage Variation vs. Temperature Figure 8. On−Resistance Variation vs. Temperature 150 200 150 175 50 102 100 ms ID, Drain Current (A) Operation in This Area is Limited by RDS(on) 10 ms 1 ms 10 ms 101 DC 100 * Notes: 1. TC = 25 °C 2. TJ = 175 °C 3. Single Pulse 10−1 100 40 30 20 10 101 102 0 25 VDS, Drain−Source Voltage (V) 50 75 100 125 TC, Case Temperature (5C) Figure 9. Maximum Safe Operating Area ZqJC(t), Thermal Response (5C/W) ID, Drain Current (A) 103 Figure 10. Maximum Drain Current vs. Case Temperature 100 D=0.5 * Notes : 1. ZqJC(t) = 0.83 °C/W Max. 0.2 2. Duty Factor, D = t1/t2 3. TJM − TC = PDM * ZqJC(t) 0.1 10−1 0.05 PDM 0.02 t1 0.01 Single Pulse t2 10−2 10−5 10−4 10−3 10−2 10−1 10−0 t1, Square Wave Pulse Duration (sec) Figure 11. Transient Thermal Response Curve www.onsemi.com 5 101 FQH44N10 VGS 50 kW 12 V 200 nF 300 nF Qg Same Type as DUT Qgs VDS VGS Qgd DUT IG = Const. Charge Figure 12. Gate Charge Test Circuit & Waveform VDS RL VDS 90% 90% 90% VDD VGS RG VGS DUT VGS 10% td(on) 10% tr td(off) ton tf toff Figure 13. Resistive Switching Test Circuit & Waveforms L BV DSS 2 E AS + 1 L I AS 2 BV DSS * V DD VDS BVDSS ID IAS RG VDD DUT VGS ID(t) VDD VDS(t) tp tp Figure 14. Unclamped Inductive Switching Test Circuit & Waveforms www.onsemi.com 6 Time FQH44N10 + DUT VDS − ISD L Driver RG Same Type as DUT VGS − dv/dt controlled by RG − ISD controlled by pulse period D+ VGS (Driver) VDD Gate Pulse Width Gate Pulse Period 10 V IFM, Body Diode Forward Current ISD (DUT) di/dt IRM Body Diode Reverse Current VDS (DUT) Body Diode Recovery dv/dt VSD VDD Body Diode Forward Voltage Drop Figure 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms QFET is registered trademarks of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other countries. www.onsemi.com 7 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS TO−247−3LD SHORT LEAD CASE 340CK ISSUE A A DATE 31 JAN 2019 A E P1 P A2 D2 Q E2 S B D 1 2 D1 E1 2 3 L1 A1 L b4 c (3X) b 0.25 M (2X) b2 B A M DIM (2X) e GENERIC MARKING DIAGRAM* AYWWZZ XXXXXXX XXXXXXX XXXX = Specific Device Code A = Assembly Location Y = Year WW = Work Week ZZ = Assembly Lot Code *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “G”, may or may not be present. Some products may not follow the Generic Marking. DOCUMENT NUMBER: DESCRIPTION: 98AON13851G TO−247−3LD SHORT LEAD A A1 A2 b b2 b4 c D D1 D2 E E1 E2 e L L1 P P1 Q S MILLIMETERS MIN NOM MAX 4.58 4.70 4.82 2.20 2.40 2.60 1.40 1.50 1.60 1.17 1.26 1.35 1.53 1.65 1.77 2.42 2.54 2.66 0.51 0.61 0.71 20.32 20.57 20.82 13.08 ~ ~ 0.51 0.93 1.35 15.37 15.62 15.87 12.81 ~ ~ 4.96 5.08 5.20 ~ 5.56 ~ 15.75 16.00 16.25 3.69 3.81 3.93 3.51 3.58 3.65 6.60 6.80 7.00 5.34 5.46 5.58 5.34 5.46 5.58 Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. 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