FQP2P40_F080

ON Semiconductor Is Now To learn more about onsemi™, please visit our website at www.onsemi.com onsemi and       and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of onsemi product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. onsemi reserves the right to make changes at any time to any products or information herein, without notice. The information herein is provided “as-is” and onsemi makes no warranty, representation or guarantee regarding the accuracy of the information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using onsemi products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/ or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. onsemi does not convey any license under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and hold onsemi and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. Other names and brands may be claimed as the property of others. P-Channel QFET® MOSFET -400 V, -2.0 A, 6.5 Ω Description Features These P-Channel enhancement mode power field effect transistors are produced using ON Semiconductor’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for electronic lamp ballast based on complimentary half bridge. • -2.0 A, -400 V, RDS(on) = 6.5 Ω (Max.) @ VGS = -10 V • Low Gate Charge (Typ. 10 nC) • Low Crss (Typ. 6.5 pF) • Fast Switching • 100% Avalanche Tested • Improved dv/dt Capability S G G D S TO-220 Absolute Maximum Ratings Symbol VDSS ID TC = 25°C unless otherwise noted. Parameter Drain-Source Voltage - Continuous (TC = 25°C) Drain Current - Continuous (TC = 100°C) IDM Drain Current VGSS Gate-Source Voltage EAS Single Pulsed Avalanche Energy IAR Avalanche Current EAR Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TC = 25°C) dv/dt PD TJ, TSTG TL - Pulsed D FQP2P40-F080 -400 Unit V -2.0 A -1.27 A -8.0 A ± 30 V (Note 2) 120 mJ (Note 1) -2.0 A (Note 1) 6.3 -4.5 63 0.51 -55 to +150 mJ V/ns W W/°C °C 300 °C FQP2P40-F080 1.98 Unit °C/W (Note 1) (Note 3) - Derate Above 25°C Operating and Storage Temperature Range Maximum Lead Temperature for Soldering, 1/8" from Case for 5 Seconds Thermal Characteristics Symbol RθJC Parameter Thermal Resistance, Junction-to-Case, Max. RθCS Thermal Resistance, Case-to-Sink, Typ. 0.5 °C/W RθJA Thermal Resistance, Junction-to-Ambient, Max. 62.5 °C/W ©2000 Semiconductor Components Industries, LLC. October-2017,Rev.3 Publication Order Number: FQP2P40/D FQP2P40 — P-Channel QFET® MOSFET FQP2P40 Part Number Top Mark FQP2P40-F080 FQP2P40 Elerical Characteristics Symbol Package TO-220 Packing Method Tube Reel Size N/A Tape Width N/A Quantity 50 units TC = 25°C unless otherwise noted. Parameter Test Conditions Min. Typ. Max. Unit -400 -- -- V -- V/°C Off Characteristics BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = -250 μA ΔBVDSS / ΔTJ Breakdown Voltage Temperature Coefficient ID = -250 μA, Referenced to 25°C -- - IDSS Zero Gate Voltage Drain Current VDS = -400 V, VGS = 0 V -- -- -1 μA VDS = -320 V, TC = 125°C -- -- -10 μA IGSSF Gate-Body Leakage Current, Forward VGS = -30 V, VDS = 0 V -- -- -100 nA IGSSR Gate-Body Leakage Current, Reverse VGS = 30 V, VDS = 0 V -- -- 100 nA On Characteristics VGS(th) Gate Threshold Voltage VDS = VGS, ID = -250 μA -3.0 -- -5.0 V RDS(on) Static Drain-Source On-Resistance VGS = -10 V, ID = -1.0 A -- 5.0 6.5 Ω gFS Forward Transconductance VDS = -50 V, ID = -1.0 A -- 1.42 -- S VDS = -25 V, VGS = 0 V, f = 1.0 MHz -- 270 350 pF -- 45 60 pF -- 6.5 8.5 pF Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Switching Characteristics td(on) Turn-On Delay Time tr Turn-On Rise Time td(off) Turn-Off Delay Time tf Turn-Off Fall Time Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge VDD = -200 V, ID = -2.0 A, VGS = -10 V, RG = 25 Ω (Note 4) VDS = -320 V, ID = -2.0 A, VGS = -10 V (Note 4) -- 9 30 ns -- 33 75 ns -- 22 55 ns -- 25 60 ns -- 10 13 nC -- 2.1 -- nC -- 5.5 -- nC Drain-Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain-Source Diode Forward Current -- -- -2.0 A ISM -- -- -8.0 A VSD Maximum Pulsed Drain-Source Diode Forward Current VGS = 0 V, IS = -2.0 A Drain-Source Diode Forward Voltage -- -- -5.0 V trr Reverse Recovery Time -- 250 -- ns Qrr Reverse Recovery Charge VGS = 0 V, IS = -2.0 A, dIF / dt = 100 A/μs -- 0.85 -- μC Notes: 1. Repetitive rating : pulse-width limited by maximum junction temperature. 2. L = 52.5 mH, IAS = -2.0 A, VDD = -50 V, RG = 25 Ω, Starting TJ = 25°C. 3. ISD ≤ -2.0 A, di/dt ≤ 200 A/μs, VDD ≤ BVDSS, Starting TJ = 25°C. 4. Essentially independent of operating temperature. www.onsemi.com 2 FQP2P40 — P-Channel QFET® MOSFET Package Marking and Ordering Information VGS -15.0 V -10.0 V -8.0 V -7.0 V -6.5 V -6.0 V Bottom : -5.5 V 0 10 -ID , Drain Current [A] -ID, Drain Current [A] Top : -1 10 ※ Notes : 1. 250μ s Pulse Test 2. TC = 25℃ 150℃ 25℃ ※ Notes : 1. VDS = -50V 2. 250μ s Pulse Test -55℃ -2 10 0 10 -1 -1 0 10 10 1 10 2 10 4 6 8 10 -VGS , Gate-Source Voltage [V] -VDS, Drain-Source Voltage [V] Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics 10 -IDR , Reverse Drain Current [A] RDS(on) [Ω], Drain-Source On-Resistance 12 VGS = - 10V VGS = - 20V 8 6 ※ Note : TJ = 25℃ 4 0 10 150℃ ※ Notes : 1. VGS = 0V 2. 250μ s Pulse Test -1 0 1 2 3 4 5 6 10 0.0 0.5 -ID , Drain Current [A] 1.0 1.5 2.0 2.5 3.0 -VSD , Source-Drain Voltage [V] Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperature 12 600 400 Ciss 300 Coss ※ Notes : 1. VGS = 0 V 2. f = 1 MHz 200 Crss 100 0 -1 10 0 10 1 10 -VGS, Gate-Source Voltage [V] Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd 500 Capacitance [pF] 25℃ VDS = -80V 10 VDS = -200V VDS = -320V 8 6 4 2 ※ Note : ID = -2.0 A 0 0 2 Figure 5. Capacitance Characteristics 4 6 8 10 12 QG, Total Gate Charge [nC] -VDS, Drain-Source Voltage [V] Figure 6. Gate Charge Characteristics www.onsemi.com 3 FQP2P40 — P-Channel QFET® MOSFET Typical Performance Characteristics (Continued) 2.5 RDS(ON), (Normalized) Drain-Source On-Resistance -BVDSS, (Normalized) Drain-Source Breakdown Voltage 1.2 1.1 1.0 ※ Notes : 1. VGS = 0 V 2. ID = -250 μA 0.9 0.8 -100 -50 0 50 100 150 2.0 1.5 1.0 ※ Notes : 1. VGS = -10 V 2. ID = -1.0 A 0.5 0.0 -100 200 -50 0 50 100 150 200 o o TJ, Junction Temperature [ C] TJ, Junction Temperature [ C] Figure 7. Breakdown Voltage Variation vs. Temperature Figure 8. On-Resistance Variation vs. Temperature 2.0 Operation in This Area is Limited by R DS(on) 1 1.6 100 μs -ID, Drain Current [A] 1 ms 10 ms 0 10 DC -1 10 ※ Notes : 1.2 0.8 0.4 o 1. TC = 25 C o 2. TJ = 150 C 3. Single Pulse -2 10 0 1 10 2 10 0.0 25 3 10 10 50 Figure 9. Maximum Safe Operating Area 10 0 125 D = 0 .5 ※ N o te s : 1 . Z θ J C ( t) = 1 . 9 8 ℃ /W M a x . 2 . D u ty F a c to r , D = t 1 /t 2 3 . T J M - T C = P D M * Z θ J C ( t) 0 .1 0 .0 5 -1 0 .0 2 0 .0 1 PDM t1 s in g le p u ls e 10 100 Figure 10. Maximum Drain Current vs. Case Temperature 0 .2 10 75 TC, Case Temperature [℃] -VDS, Drain-Source Voltage [V] ZθJC(t), Thermal Response [oC/W] Zθ JC(t), Thermal Response -ID, Drain Current [A] 10 t2 -2 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 t 1 , S q u a r e W a v e P u ls e D u r a t io n [ s e c ] Figure 11. Transient Thermal Response Curve www.onsemi.com 4 10 1 150 FQP2P40 — P-Channel QFET® MOSFET Typical Performance Characteristics 200nF 12V FQP2P40 — P-Channel QFET® MOSFET VGS Same Type as DUT 50KΩ Qg -10V 300nF VDS VGS Qgs Qgd DUT -3mA IG = const. Charge Figure 12. Gate Charge Test Circuit & Waveform VDS RG RL t on VDD VGS td(on) VGS t off tr td(off) tf 10% DUT VGS -10V VDS 90% Figure 13. Resistive Switching Test Circuit & Waveforms BVDSS 1 EAS = ---- L IAS2 -------------------2 BVDSS - VDD L VDS tp ID RG VGS -10V VDD DUT tp VDD VDS (t) ID (t) IAS BVDSS Figure 14. Unclamped Inductive Switching Test Circuit & Waveforms www.onsemi.com 5 Time FQP2P40 — P-Channel QFET® MOSFET + VDS DUT _ I SD L Driver RG VGS VGS ( Driver ) I SD ( DUT ) Compliment of DUT (N-Channel) VDD • dv/dt controlled by RG • ISD controlled by pulse period Gate Pulse Width D = -------------------------Gate Pulse Period 10V Body Diode Reverse Current IRM di/dt IFM , Body Diode Forward Current VDS ( DUT ) VSD Body Diode Forward Voltage Drop Body Diode Recovery dv/dt Figure 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms www.onsemi.com 6 VDD FQP2P40 — P-Channel QFET® MOSFET Mechanical Dimensions Figure 16. TO220, Molded, 3-Lead, Jedec Variation AB Package drawings are provided as a service to customers considering ON Semiconductor components. Drawings may change in any manner without notice. Please note the revision and/or date on the drawing and contact a ON Semiconductor representative to verify or obtain the most recent revision. Package specifications do not expand the terms of ON Semiconductor’s worldwide terms and conditions, specif-ically the warranty therein, which covers ON Semiconductor products. www.onsemi.com 7 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor 19521 E. 32nd Pkwy, Aurora, Colorado 80011 USA Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada Email: orderlit@onsemi.com ❖ © Semiconductor Components Industries, LLC N. American Technical Support: 800−282−9855 Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: 421 33 790 2910 Japan Customer Focus Center Phone: 81−3−5817−1050 ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative www.onsemi.com