FQPF6P25

FQPF6P25 April 2000 QFET TM FQPF6P25 250V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switching DC/DC converters. • • • • • • -4.2A, -250V, RDS(on) = 1.1Ω @VGS = -10 V Low gate charge ( typical 21 nC) Low Crss ( typical 20 pF) Fast switching 100% avalanche tested Improved dv/dt capability S !

G!

GD S Absolute Maximum Ratings

Symbol VDSS TO-220F ! FQPF Series D TC = 25°C unless otherwise noted Parameter ID Drain-Source Voltage - Continuous (TC = 25°C) Drain Current IDM Drain Current VGSS Gate-Source Voltage EAS Single Pulsed Avalanche Energy IAR Avalanche Current EAR Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TC = 25°C) FQPF6P25 - Continuous (TC = 100°C) dv/dt PD TJ, TSTG TL - Pulsed Units -250 V -4.2 A -1.78 A -16.8 A ±
30 V (Note 2) 540 mJ (Note 1) -4.2 A (Note 1) 4.5 -5.5 45 0.36 -55 to +150 mJ V/ns W W/°C °C 300 °C (Note 1) (Note 3) - Derate above 25°C Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8
from case for 5 seconds Thermal Characteristics Symbol RθJC Typ Max Units Thermal Resistance, Junction-to-Case Parameter -- 2.78 °CW RθJA Thermal Resistance, Junction-to-Ambient -- 62.5 °CW ©2000 Fairchild Semiconductor International Rev. A, April 2000 Symbol C = 25°C unless otherwise noted Parameter Test Conditions Min Typ Max Units -250 -- -- V Off Characteristics BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = -250 µA ∆BVDSS / ∆TJ Breakdown Voltage Temperature Coefficient ID = -250 µA, Referenced to 25°C -- -0.1 -- V/°C -1 µA µA IDSS Zero Gate Voltage Drain Current VDS = -250 V, VGS = 0 V -- -- VDS = -200 V, TC = 125°C -- -- -10 IGSSF Gate-Body Leakage Current, Forward VGS = -30 V, VDS = 0 V -- -- -100 nA IGSSR Gate-Body Leakage Current, Reverse VGS = 30 V, VDS = 0 V -- -- 100 nA On Characteristics VGS(th) Gate Threshold Voltage VDS = VGS, ID = -250 µA -3.0 -- -5.0 V RDS(on) Static Drain-Source On-Resistance VGS = -10 V, ID = -2.1 A -- 0.82 1.1 Ω gFS Forward Transconductance VDS = -40 V, ID = -2.1 A -- 2.8 -- S -- 600 780 pF -- 115 150 pF -- 20 25 pF -- 13 35 ns (Note 4) Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance VDS = -25 V, VGS = 0 V, f = 1.0 MHz Switching Characteristics td(on) Turn-On Delay Time tr Turn-On Rise Time td(off) Turn-Off Delay Time tf Turn-Off Fall Time Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge VDD = -125 V, ID = -6.0 A, RG = 25 Ω (Note 4, 5) VDS = -200 V, ID = -6.0 A, VGS = -10 V (Note 4, 5) -- 75 160 ns -- 40 90 ns -- 50 110 ns -- 21 27 nC -- 4.7 -- nC -- 10.7 -- nC A Drain-Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain-Source Diode Forward Current -- -- -4.2 ISM -- -- -16.8 A VSD Maximum Pulsed Drain-Source Diode Forward Current VGS = 0 V, IS = -4.2 A Drain-Source Diode Forward Voltage -- -- -5.0 V trr Reverse Recovery Time -- 170 -- ns Qrr Reverse Recovery Charge -- 1.1 -- µC VGS = 0 V, IS = -6.0 A, dIF / dt = 100 A/µs (Note 4) Notes: 1. Repetitive Rating : Pulse width limited by maximum junction temperature 2. L = 49mH, IAS = -4.2A, VDD = -50V, RG = 25 Ω, Starting TJ = 25°C 3. ISD
-6.0A, di/dt
300A/µs, VDD
BVDSS, Starting TJ = 25°C 4. Pulse Test : Pulse width
300µs, Duty cycle
2% 5. Essentially independent of operating temperature ©2000 Fairchild Semiconductor International Rev. A, April 2000 FQPF6P25 Electrical Characteristics




T VGS -15 V -10 V -8.0 V -7.0 V -6.5 V -6.0 V Bottom : -5.5 V Top : -I D , Drain Current [A] 1 10 -ID , Drain Current [A] 1 10 0 10 150
0 10 25
-55

Notes : 1. VDS = -40V 2. 250s Pulse Test
Notes : 1. 250s Pulse Test 2. TC = 25 -1 10 -1 10 -1 0 10 2 1 10 10 4 6 8 10 -VGS , Gate-Source Voltage [V] -VDS , Drain-Source Voltage [V] Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics 3.0 1 10 -IDR , Reverse Drain Current [A] RDS(on) [ Ω ], Drain-Source On-Resistance 2.5 VGS = - 10V 2.0 VGS = - 20V 1.5 0 10 1.0 0.5 150
25

Notes : 1. VGS = 0V 2. 250s Pulse Test
Note : TJ = 25 0.0 -1 0 4 8 12 16 20 10 0.0 0.5 1.0 1.5 2.0 2.5 3.0 -ID , Drain Current [A] -VSD , Source-Drain Voltage [V] Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperature 1400 Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd 1200 12 VDS = -50V Ciss Coss 800 600
Notes : 1. VGS = 0 V 2. f = 1 MHz Crss 400 200 -VGS, Gate-Source Voltage [V] 10 1000 Capacitance [pF] FQPF6P25 Typical Characteristics VDS = -125V VDS = -200V 8 6 4 2
Note : ID = -6.0 A 0 -1 10 0 0 10 1 10 -VDS, Drain-Source Voltage [V] Figure 5. Capacitance Characteristics ©2000 Fairchild Semiconductor International 0 4 8 12 16 20 24 QG, Total Gate Charge [nC] Figure 6. Gate Charge Characteristics Rev. A, April 2000 FQPF6P25 Typical Characteristics (Continued) 3.0 1.2 -BV DSS , (Normalized) Drain-Source Breakdown Voltage 2.5 RDS(ON) , (Normalized) Drain-Source On-Resistance 1.1 1.0 0.9
Notes : 1. VGS = 0 V 2. ID = -250 A 0.8 -100 -50 0 50 100 2.0 1.5 1.0
Notes : 1. VGS = -10 V 2. ID = -3.0 A 0.5 150 0.0 -100 200 -50 0 o 50 100 150 200 o TJ, Junction Temperature [ C] TJ, Junction Temperature [ C] Figure 7. Breakdown Voltage Variation vs. Temperature Figure 8. On-Resistance Variation vs. Temperature 2 5 10 Operation in This Area is Limited by R DS(on) 1 1 ms 4 100 µs 10 ms -I D, Drain Current [A] -I D, Drain Current [A] 10 100 ms DC 0 10 -1
Notes : 10 3 2 1 o 1. TC = 25 C o 2. TJ = 150 C 3. Single Pulse -2 10 0 1 10 0 25 2 10 10 50 Figure 9. Maximum Safe Operating Area 100 125 150 Figure 10. Maximum Drain Current vs. Case Temperature D = 0 .5 10 0 0 .2
N o te s : 1 . Z
J C ( t) = 2 .7 8  / W M a x . 2 . D u ty F a c to r , D = t 1 /t 2 3 . T J M - T C = P D M * Z
J C ( t) 0 .1 0 .0 5 10 -1 0 .0 2
JC ( t) , T h e r m a l R e s p o n s e 75 TC, Case Temperature [
] -VDS, Drain-Source Voltage [V] PDM 0 .0 1 t1 Z t2 s i n g le p u ls e 10 -2 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 t 1 , S q u a r e W a v e P u ls e D u r a t io n [ s e c ] Figure 11. Transient Thermal Response Curve ©2000 Fairchild Semiconductor International Rev. A, April 2000 FQPF6P25 Gate Charge Test Circuit & Waveform VGS Same Type as DUT 50K
Qg 200nF 12V -10V 300nF VDS VGS Qgs Qgd DUT -3mA Charge Resistive Switching Test Circuit & Waveforms VDS RL t on VDD VGS RG td(on) VGS t off tr td(off) tf 10% DUT -10V VDS 90% Unclamped Inductive Switching Test Circuit & Waveforms BVDSS 1 EAS = ---- L IAS2 -------------------2 BVDSS - VDD L VDS tp ID VDD RG VDD DUT -10V tp ©2000 Fairchild Semiconductor International Time VDS (t) ID (t) IAS BVDSS Rev. A, April 2000 FQPF6P25 Peak Diode Recovery dv/dt Test Circuit & Waveforms + VDS DUT _ I SD L Driver RG VGS VGS ( Driver ) I SD ( DUT ) Compliment of DUT (N-Channel) VDD • dv/dt controlled by RG • ISD controlled by pulse period Gate Pulse Width D = -------------------------Gate Pulse Period 10V Body Diode Reverse Current IRM di/dt IFM , Body Diode Forward Current VDS ( DUT ) VSD Body Diode Forward Voltage Drop VDD Body Diode Recovery dv/dt ©2000 Fairchild Semiconductor International Rev. A, April 2000 3.30 ±0.10 TO-220F 10.16 ±0.20 2.54 ±0.20 ø3.18 ±0.10 (7.00) (1.00x45°) 15.87 ±0.20 15.80 ±0.20 6.68 ±0.20 (0.70) MAX1.47 0.80 ±0.10 ) 0° (3 9.75 ±0.30 0.35 ±0.10 #1 +0.10 0.50 –0.05 2.54TYP [2.54 ±0.20] 2.54TYP [2.54 ±0.20] 9.40 ±0.20 ©2000 Fairchild Semiconductor International 2.76 ±0.20 4.70 ±0.20 FQPF6P25 Package Dimensions Rev. A, April 2000 TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ Bottomless™ CoolFET™ CROSSVOLT™ E2CMOS™ FACT™ FACT Quiet Series™ FAST® FASTr™ GTO™ HiSeC™ ISOPLANAR™ MICROWIRE™ POP™ PowerTrench® QFET™ QS™ Quiet Series™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TinyLogic™ UHC™ VCX™ DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR INTERNATIONAL. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. ©2000 Fairchild Semiconductor International Rev. A, January 2000