FQU2N50BTU_WS

ON Semiconductor Is Now To learn more about onsemi™, please visit our website at www.onsemi.com onsemi and       and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of onsemi product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. onsemi reserves the right to make changes at any time to any products or information herein, without notice. The information herein is provided “as-is” and onsemi makes no warranty, representation or guarantee regarding the accuracy of the information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using onsemi products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/ or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. onsemi does not convey any license under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and hold onsemi and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. Other names and brands may be claimed as the property of others. N-Channel QFET® MOSFET 500 V, 1.6 A, 5.3 Ω Description Features This N-Channel enhancement mode power MOSFET is produced using ON Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, audio amplifier, DC motor control, and variable switching power applications. • 1.6 A, 500 V, RDS(on) = 5.3 Ω (Max.) @ VGS = 10 V, ID = 0.8 A • Low Gate Charge (Typ. 6.0 nC) • Low Crss (Typ. 4.3 pF) • Fast Switching • 100% Avalanche Tested • Improved dv/dt Capability D G G D S I-PAK Absolute Maximum Ratings T Symbol VDSS ID S o C = 25 C unless otherwise noted. FQU2N50BTU-WS 500 Parameter Drain-Source Voltage - Continuous (TC = 25°C) Drain Current - Continuous (TC = 100°C) IDM Drain Current VGSS Gate-Source Voltage EAS Single Pulsed Avalanche Energy IAR EAR dv/dt PD - Pulsed (Note 1) TL 1.6 A 1.0 A 6.4 A ± 30 V (Note 2) 120 mJ Avalanche Current (Note 1) 1.6 A Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TA = 25°C) * (Note 1) 3.0 4.5 2.5 mJ V/ns W 30 0.24 -55 to +150 W W/°C °C 300 °C (Note 3) Power Dissipation (TC = 25°C) TJ, TSTG Units V - Derate above 25°C Operating and Storage Temperature Range Maximum Lead Temperature for Soldering, 1/8" from Case for 5 Seconds Thermal Characteristics Symbol RJC RJA Parameter FQU2N50BTU_WS Thermal Resistance, Junction to Ambient (Minimum Pad of 2-oz Copper), Max. 2 Thermal Resistance, Junction to Ambient (*1 in Pad of 2-oz Copper), Max. ©2000 Semiconductor Components Industries, LLC. October-2017,Rev. 3 Unit 4.17 Thermal Resistance, Junction to Case, Max. 110 oC/W 50 Publication Order Number: FQU2N50B/D FQU2N50B — N-Channel QFET® MOSFET FQU2N50B Part Number FQU2N50BTU-WS Electrical Characteristics T Symbol Package I-PAK Top Mark FQU2N50B Packing Method Tube Reel Size N/A Tape Width N/A Quantity 75 units o C = 25 C unless otherwise noted. Parameter Test Conditions Min Typ Max Units 500 -- -- V -- V/°C Off Characteristics BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 µA ∆BVDSS / ∆TJ Breakdown Voltage Temperature Coefficient ID = 250 µA, Referenced to 25°C -- 0.48 IDSS Zero Gate Voltage Drain Current VDS = 500 V, VGS = 0 V -- -- 1 µA VDS = 400 V, TC = 125°C -- -- 10 µA IGSSF Gate-Body Leakage Current, Forward VGS = 30 V, VDS = 0 V -- -- 100 nA IGSSR Gate-Body Leakage Current, Reverse VGS = -30 V, VDS = 0 V -- -- -100 nA On Characteristics VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250 µA 2.3 3.0 3.7 V VDS = VGS, ID = 250 mA 3.6 4.3 5.0 V RDS(on) Static Drain-Source On-Resistance VGS = 10 V, ID = 0.8 A -- 4.2 5.3 Ω gFS Forward Transconductance VDS = 50 V, ID = 0.8 A -- 1.3 -- S VDS = 25 V, VGS = 0 V, f = 1.0 MHz -- 180 230 pF -- 30 40 pF -- 4 6 pF ns Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Switching Characteristics td(on) Turn-On Delay Time tr Turn-On Rise Time td(off) Turn-Off Delay Time tf Turn-Off Fall Time Qg Total Gate Charge Qgs Gate-Source Charge Qgd VDD = 250 V, ID = 2.1 A, RG = 25 Ω (Note 4) VDS = 400 V, ID = 2.1 A, VGS = 10 V (Note 4) Gate-Drain Charge -- 6 20 -- 25 60 ns -- 10 30 ns -- 20 50 ns -- 6.0 8.0 nC -- 1.3 -- nC -- 3.0 -- nC A Drain-Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain-Source Diode Forward Current -- -- 1.6 ISM -- -- 6.4 A VSD Maximum Pulsed Drain-Source Diode Forward Current VGS = 0 V, IS = 1.6 A Drain-Source Diode Forward Voltage -- -- 1.4 V trr Reverse Recovery Time Qrr Reverse Recovery Charge VGS = 0 V, IS = 2.1 A, dIF / dt = 100 A/µs
 1. Repetitive rating : pulse-width limited by maximum junction temperature. 2. L = 85 mH, IAS = 1.6 A, VDD = 50 V, RG = 25 Ω, starting TJ = 25oC. 3. ISD ≤ 2.1 A, di/dt ≤ 200 A/μs, VDD ≤ BVDSS, starting TJ = 25oC. 4. Essentially independent of operating temperature. www.onsemi.com 2 -- 195 -- ns -- 0.69 -- µC FQU2N50B — N-Channel QFET® MOSFET Package Marking and Ordering Information ID , Drain Current [A] 0 10 Bottom : VGS 15 V 10 V 8.0 V 7.0 V 6.5 V 6.0 V 5.5 V ID , Drain Current [A] Top : -1 10 150℃ 0 10 25℃ -55℃ ※ Notes : 1. 250μs Pulse Test 2. TC = 25℃ ※ Notes : 1. VDS = 50V 2. 250μs Pulse Test -2 10 -1 -1 0 10 10 1 10 2 10 4 8 6 10 VGS , Gate-Source Voltage [V] VDS , Drain-Source Voltage [V] Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics 18 IDR , Reverse Drain Current [A] RDS(on) [ Ω ], Drain-Source On-Resistance 15 VGS = 10V 12 VGS = 20V 9 6 3 0 10 25℃ 150℃ ※ Notes : 1. VGS = 0V 2. 250μs Pulse Test ※ Note : TJ = 25℃ 0 0.0 -1 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 10 0.2 0.4 ID , Drain Current [A] 0.6 0.8 1.0 1.2 1.4 VSD , Source-Drain Voltage [V] Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperature 12 350 Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd 300 VDS = 100V 10 Capacitance [pF] 250 Ciss 200 Coss 150 ※ Notes : 1. VGS = 0 V 2. f = 1 MHz 100 Crss 50 VGS, Gate-Source Voltage [V] VDS = 250V VDS = 400V 8 6 4 2 ※ Note : ID = 2.1 A 0 -1 10 0 0 10 1 10 0 1 2 3 4 5 6 7 QG, Total Gate Charge [nC] VDS, Drain-Source Voltage [V] Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics www.onsemi.com 3 FQU2N50B — N-Channel QFET® MOSFET  !    3.0 1.2 RDS(ON) , (Normalized) Drain-Source On-Resistance BV DSS , (Normalized) Drain-Source Breakdown Voltage 2.5 1.1 1.0 ※ Notes : 1. VGS = 0 V 2. ID = 250 μA 0.9 0.8 -100 -50 0 50 100 150 2.0 1.5 1.0 ※ Notes : 1. VGS = 10 V 2. ID = 1.05 A 0.5 0.0 -100 200 -50 o 0 50 100 150 200 o TJ, Junction Temperature [ C] TJ, Junction Temperature [ C] Figure 7. Breakdown Voltage Variation vs. Temperature Figure 8. On-Resistance Variation vs. Temperature 1.8 Operation in This Area is Limited by R DS(on) 1 1.5 10 ID, Drain Current [A] 1 ms 0 10 10 ms DC -1 10 ※ Notes : o 1. TC = 25 C 1.2 0.9 0.6 0.3 o 2. TJ = 150 C 3. Single Pulse -2 10 0 1 10 2 10 0.0 25 3 10 10 50 75 100 125 TC, Case Temperature [℃] VDS, Drain-Source Voltage [V] Figure 9. Maximum Safe Operating Area ZJC(t), Thermal Response [oC/W] ID, Drain Current [A] 100 µs 10µs Figure 10. Maximum Drain Current vs. Case Temperature D = 0 .5 10 ※ N o te s : 1 . Z θ J C ( t) = 4 .1 7 ℃ /W M a x . 2 . D u ty F a c to r , D = t 1 /t 2 3 . T J M - T C = P D M * Z θ J C ( t) 0 0 .2 0 .1 0 .0 5 10 PDM 0 .0 2 0 .0 1 -1 t1 s i n g l e p u ls e 10 -5 10 -4 10 t2 -3 10 -2 10 -1 10 0 t1 , R e c t a n g u l a r P u l s e D u r a t i o n [ s e c ] Figure 11. Transient Thermal Response Curve www.onsemi.com 4 10 1 150 FQU2N50B — N-Channel QFET® MOSFET  !   



   FQU2N50B — N-Channel QFET® MOSFET 50KΩ 200nF 12V VGS Same Type as DUT Qg 10V 300nF VDS VGS Qgs Qgd DUT IG = const. 3mA Charge Figure 12. Gate Charge Test Circuit & Waveform VDS RG RL VDS 90% VDD VGS VGS DUT V 10V GS 10% td(on) tr td(off) t on t off tf Figure 13. Resistive Switching Test Circuit & Waveforms VDS BVDSS 1 EAS = ---- L IAS2 -------------------2 BVDSS - VDD L BVDSS IAS ID RG V 10V GS GS VDD DUT ID (t) VDS (t) VDD tp tp Figure 14. Unclamped Inductive Switching Test Circuit & Waveforms www.onsemi.com 5 Time + VDS _ I SD L Driver RG VGS VGS ( Driver ) I SD ( DUT ) Same Type as DUT VDD • dv/dt controlled by RG • ISD controlled by pulse period Gate Pulse Width D = -------------------------Gate Pulse Period 10V IFM , Body Diode Forward Current di/dt IRM Body Diode Reverse Current VDS ( DUT ) Body Diode Recovery dv/dt VSD VDD Body Diode Forward Voltage Drop Figure 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms www.onsemi.com 6 FQU2N50B — N-Channel QFET® MOSFET DUT FQU2N50B — N-Channel QFET® MOSFET Mechanical Dimensions Figure 16. TO-251 (I-PAK), Molded, 3-Lead, Option AA Package drawings are provided as a service to customers considering ON Semiconductor components. Drawings may change in any manner without notice. Please note the revision and/or date on the drawing and contact a ON Semiconductor representative to verify or obtain the most recent revision. Package specifications do not expand the terms of ON Semiconductor’s worldwide terms and conditions, specif-ically the warranty therein, which covers ON Semiconductor products. www.onsemi.com 7 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor 19521 E. 32nd Pkwy, Aurora, Colorado 80011 USA Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada Email: orderlit@onsemi.com ❖ © Semiconductor Components Industries, LLC N. American Technical Support: 800−282−9855 Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: 421 33 790 2910 Japan Customer Focus Center Phone: 81−3−5817−1050 ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative www.onsemi.com