H11D1TM

DATA SHEET www.onsemi.com 6-Pin DIP High Voltage Phototransistor Optocouplers 6 1 PDIP6 CASE 646BY 4N38M, H11D1M, H11D3M, MOC8204M Description The 4N38M, H11D1M, H11D3M and MOC8204M are phototransistor−type optically coupled optoisolators. A gallium arsenide infrared emitting diode is coupled with a high voltage NPN silicon phototransistor. The device is supplied in a standard plastic six−pin dual−in−line package. Features • High Voltage: MOC8204M, BVCEO = 400 V ♦ H11D1M, BVCEO = 300 V ♦ H11D3M, BVCEO = 200 V Safety and Regulatory Approvals: ♦ UL1577, 4,170 VACRMS for 1 Minute DIN−EN/IEC60747−5−5, 850 V Peak Working Insulation Voltage ♦ • • Applications • • • • • Power Supply Regulators Digital Logic Inputs Microprocessor Inputs Appliance Sensor Systems Industrial Controls © Semiconductor Components Industries, LLC, 2022 February, 2022 − Rev. 0 6 6 1 1 PDIP6 CASE 646BZ PDIP6 CASE 646BX MARKING DIAGRAM ON H11D1 VXYYQ ON = Company Logo H11D1 = Specific Device Code V = DIN EN/IEC60747−5−5 Option (only appears on component ordered with this option) X = One−Digit Year Code YY = Digit Work Week Q = Assembly Package Code ORDERING INFORMATION See detailed ordering and shipping information on page 410 of this data sheet. 1 Publication Order Number: MOC8204M/D 4N38M, H11D1M, H11D3M, MOC8204M SCHEMATICS ANODE 1 CATHODE 6 BASE 5 COLLECTOR 2 4 EMITTER N/C 3 Figure 1. Schematics SAFETY AND INSULATION RATINGS Parameter Installation Classifications per DIN VDE 0110/1.89 Table 1, For Rated Mains Voltage Characteristic < 150 VRMS I − IV < 300 VRMS I − IV Climatic Classification 55/100/21 Pollution Degree (DIN VDE 0110/1.89) 2 Comparative Tracking Index Symbol 175 Value Unit Input−to−Output Test Voltage, Method A, VIORM x 1.6 = VPR, Type and Sample Test with tm = 10 s, Partial Discharge < 5 pC 1360 Vpeak Input−to−Output Test Voltage, Method B, VIORM x 1.875 = VPR, 100% Production Test with tm = 1 s, Partial Discharge < 5 pC 1594 Vpeak VIORM Maximum Working Insulation Voltage 850 Vpeak VIOTM Highest Allowable Over−Voltage 6000 Vpeak External Creepage ≥7 mm External Clearance ≥7 mm VPR Parameter External Clearance (for Option TV, 0.4” Lead Spacing) ≥ 10 mm DTI Distance Through Insulation (Insulation Thickness) ≥ 0.5 mm TS Case Temperature (Note 1) 175 °C IS,INPUT Input Current (Note 1) 350 mA PS,OUTPUT Output Power (Note 1) 800 mW > 109 Ω RIO Insulation Resistance at TS, VIO = 500 V (Note 1) As per DIN EN/IEC 60747−5−5, this optocoupler is suitable for “safe electrical insulation” only within the safety limit data. Compliance with the safety ratings shall be ensured by means of protective circuits. 1. Safety limit values – maximum values allowed in the event of a failure. www.onsemi.com 2 4N38M, H11D1M, H11D3M, MOC8204M ABSOLUTE MAXIUM RATINGS Symbol Parameter Device Value Unit TOTAL DEVICE TSTG Storage Temperature All −40 to + 125 °C TOPR Operating Temperature All −40 to + 100 °C Junction Temperature All −40 to + 125 °C Lead Solder Temperature All 260 for 10 seconds °C Total Device Power Dissipation @ TA = 25°C All 420 mW 3.5 mW/°C TJ TSOL PD Derate Above 25°C EMITTER IF Forward DC Current (Note 2) All 80 mA VR Reverse Input Voltage (Note 2) All 6.0 V Forward Current – Peak (1 μs pulse, 300 pps) (Note 2) All 3.0 A LED Power Dissipation @ TA = 25°C (Note 2) All IF(pk) PD Derate Above 25°C 120 mW 1.41 mW/°C DETECTOR PD All Power Dissipation @ TA = 25°C 300 mW 4.0 mW/°C MOC8204M 400 V H11D1M 300 V H11D3M 200 V Derate Linearly Above 25°C VCEO VCBO VECO IC Collector to Emitter Voltage (Note 2) Collector Base Voltage (Note 2) Emitter to Collector Voltage (Note 2) Collector Current (Continuous) 4N38M 80 V MOC8204M 400 V H11D1M 300 V H11D3M 200 V 4N38M 80 V H11D1M, H11D3M, MOC8204M 7 V All 100 mA Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 2. Parameters meet or exceed JEDEC registered data (for 4N38M only). www.onsemi.com 3 4N38M, H11D1M, H11D3M, MOC8204M ELECTRICAL CHARACTERISTICS Symbol (TJ = 25°C unless otherwise noted) Characteristic Test Conditions Device Min Typ Max Unit All − 1.15 1.50 V All − −1.8 − mV/°C INDIVIDUAL COMONENT CHARACTERISTICS Emitter VF Forward Voltage (Note 3) IF = 10 mA ΔVF ΔTA Forward Voltage Temperature Coefficient BVR Reverse Breakdown Voltage IR = 10 μA All 6 25 − V Junction Capacitance VF = 0 V, f = 1 MHz All − 50 − pF − 65 − pF All − 0.05 10 μA MOC8204M 400 − − V H11D1M 300 − − V H11D3M 200 − − V CJ VF = 1 V, f = 1 MHz IR Reverse Leakage Current (Note 3) VR = 6 V Breakdown Voltage Collector−to−Emitter (Note 3) RBE = 1 MΩ, IC = 1.0 mA, IF = 0 Detector BVCEO No RBE, IC = 1.0 mA BVCBO Collector to Base (Note 3) IC = 100 μA, IF = 0 4N38M 80 − − V MOC8204M 400 − − V H11D1M 300 − − V H11D3M 200 − − V 4N38M 80 − − V BVEBO Emitter to Base IE = 100 μA, IF = 0 4N38M 7 − − V BVECO Emitter to Collector IE = 100 μA, IF = 0 All 7 10 − V Leakage Current Collector to Emitter (Note 3) (RBE = 1 MΩ) VCE = 300 V, IF = 0, TA = 25°C MOC8204M − − 100 nA − − 250 μA − − 100 nA − − 250 μA − − 100 nA − − 250 μA 4N38M − − 50 nA IF = 10 mA, VCE = 10 V, RBE = 1 MΩ H11D1M, H11D3M, MOC8204M 2 (20) − − mA (%) IF = 10 mA, VCE = 10 V 4N38M 2 (20) − − mA (%) IF = 10 mA, IC = 0.5 mA, RBE = 1 MΩ H11D1M, H11D3M, MOC8204M − 0.1 0.4 V IF = 20 mA, IC = 4 mA 4N38M − − 1.0 V VCE = 10 V, IC = 2 mA, RL = 100 Ω All − 5 − μs All − 5 − μs 4170 − − VACRMS − 0.2 − pF 1011 − − Ω ICEO VCE = 300 V, IF = 0, TA = 100°C VCE = 200 V, IF = 0, TA = 25°C H11D1M VCE = 200 V, IF = 0, TA = 100°C VCE = 100 V, IF = 0, TA = 25°C H11D3M VCE = 100 V, IF = 0, TA = 100°C No RBE, VCE = 60 V, IF = 0, TA = 25°C TRANSFER CHARACTERISTICS Emitter CTR VCE(SAT) Current Transfer Ratio, Collector−to−Emitter Saturation Voltage (Note 3) Switching Times tON Non−Saturated Turn−on Time tOFF Turn−off Time ISOLATION CHARACTERISTICS VISO Input−Output Isolation Voltage t = 1 Minute CISO Isolation Capacitance VI−O = 0 V, f = 1 MHz RISO Isolation Resistance VI−O = ±500 VDC, TA = 25°C Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 3. Parameters meet or exceed JEDEC registered data (for 4N38M only). www.onsemi.com 4 4N38M, H11D1M, H11D3M, MOC8204M TYPICAL PERFORMANCE CURVES NORMALIZED IC – OUTPUT CURRENT VF – FORWARD VOLTAGE (V) 1.8 1.7 1.6 1.5 1.4 1.3 TA = −55°C 1.2 TA = 25°C 1.1 1.0 1 Normalized to: VCE = 10 V IF = 10 mA RBE = 106 Ω TA = 25°C 10 IF = 5 mA 0.1 0.01 TA = 100°C 10 100 0.1 1000 NORMALIZED IC – OUTPUT CURRENT IF = 5 mA Normalized to: VCE = 10 V IF = 10 mA RBE = 106 Ω TA = 25°C −40 −20 0 20 40 60 80 Figure 4. Normalized Output Current vs. LED Input Current Figure 5. Normalized Output Current vs. Temperature VCE = 300 V 10 VCE = 50 V 1 0.1 10 IF = 10 mA TA – AMBIENT TEMPERATURE (°C) VCE = 100 V 100 1 IF – LED INPUT DCURRENT (mA) Normalized to: VCE = 100 V RBE = 106 Ω TA = 25°C 10000 100 IF = 20 mA 0.01 −60 10 NORMALIZED ICBO – COLLECTOR− BASE CURRENT NORMALIZED IC – OUTPUT CURRENT NORMALIZED ICEO − DARK CURRENT Normalized to: VCE = 10 V IF = 10 mA RBE = 106 Ω TA = 25°C 1 10 Figure 3. Normalized Output Characteristics 0.1 0.01 1 VCE − COLLECTOR VOLTAGE (V) Figure 2. LED Forward Voltage vs. Forward Current 1 IF = 10 mA 1 IF – LED FORWARDCURRENT (mA) 10 IF = 50 mA 20 30 40 50 60 70 80 90 100 110 100 10 Normalized to: VCE = 10 V IF = 10 mA RBE = 106 Ω TA = 25°C 9 8 7 IF = 50 mA 6 5 4 3 2 IF = 10 mA IF = 5 mA 1 0 −60 TA – AMBIENT TEMPERATURE (°C) −40 −20 0 20 40 60 80 100 TA – AMBIENT TEMPERATURE (°C) Figure 7. Normalized Collector−Base Current vs. Temperature Figure 6. Normalized Dark Current vs. Ambient Temperature www.onsemi.com 5 4N38M, H11D1M, H11D3M, MOC8204M REFLOW PROFILE Figure 8. Reflow Profile Profile Feature Pb−Free Assembly Profile Temperature Min. (Tsmin) 150°C Temperature Max. (Tsmax) 200°C Time (tS) from (Tsmin to Tsmax) 60 − 120 seconds Ramp−up Rate (t to tP) 3°C / second max. Liquidous Temperature (TL) 217°C Time (tL) Maintained Above (TL) 60 − 150 seconds Peak Body Package Temperature 260°C + 0°C / −5°C Time (tP) within 5°C of 260°C 30 seconds Ramp−down Rate (TP to TL) 6°C / second max. Time 25°C to Peak Temperature 8 minutes max. Table 1. ORDERING INFORMATION Part Number Package Packing Method† H11D1M DIP 6−Pin Tube (50 Units) H11D1SM SMT 6−Pin (Lead Bend) Tube (50 Units) H11D1SR2M SMT 6−Pin (Lead Bend) Tape and Reel (1000 Units) H11D1VM DIP 6−Pin, DIN EN/IEC60747−5−5 Option Tube (50 Units) H11D1SVM SMT 6−Pin (Lead Bend), DIN EN/IEC60747−5−5 Option Tube (50 Units) H11D1SR2VM SMT 6−Pin (Lead Bend), DIN EN/IEC60747−5−5 Option Tape and Reel (1000 Units) H11D1TVM DIP 6−Pin, 0.4” Lead Spacing, DIN EN/IEC60747−5−5 Option Tube (50 Units) †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. 4. The product orderable part number system listed in this table also applies to the 4N38M, H11D3M, and MOC8204M devices. www.onsemi.com 6 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS PDIP6 8.51x6.35, 2.54P CASE 646BX ISSUE O DOCUMENT NUMBER: DESCRIPTION: 98AON13449G PDIP6 8.51X6.35, 2.54P DATE 31 JUL 2016 Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the rights of others. © Semiconductor Components Industries, LLC, 2019 www.onsemi.com MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS PDIP6 8.51x6.35, 2.54P CASE 646BY ISSUE A DATE 15 JUL 2019 A B DOCUMENT NUMBER: DESCRIPTION: 98AON13450G PDIP6 8.51x6.35, 2.54P Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the rights of others. © Semiconductor Components Industries, LLC, 2018 www.onsemi.com MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS PDIP6 8.51x6.35, 2.54P CASE 646BZ ISSUE O DOCUMENT NUMBER: DESCRIPTION: 98AON13451G PDIP6 8.51X6.35, 2.54P DATE 31 JUL 2016 Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the rights of others. © Semiconductor Components Industries, LLC, 2019 www.onsemi.com onsemi, , and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. 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