H11G2M

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Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. H11G1M, H11G2M 6-Pin DIP High Voltage Photodarlington Optocouplers Features General Description ■ High BVCEO: The H11G1M and H11G2M are photodarlington-type optically coupled optocouplers. These devices have a gallium arsenide infrared emitting diode coupled with a silicon darlington connected phototransistor which has an integral base-emitter resistor to optimize elevated temperature characteristics. – 100 V Minimum for H11G1M – 80 V Minimum for H11G2M ■ High Sensitivity to Low Input Current (Minimum 500% CTR at IF = 1 mA) ■ Low Leakage Current at Elevated Temperature (Maximum 100 µA at 80°C) ■ Safety and Regulatory Approvals: – UL1577, 4,170 VACRMS for 1 Minute – DIN-EN/IEC60747-5-5, 850 V Peak Working Insulation Voltage Applications ■ CMOS Logic Interface ■ Telephone Ring Detector ■ Low Input TTL Interface ■ Power Supply Isolation ■ Replace Pulse Transformer Schematic Package Outlines ANODE 1 6 BASE 5 COLLECTOR CATHODE 2 N/C 3 4 EMITTER Figure 2. Package Outlines Figure 1. Schematic ©2007 Fairchild Semiconductor Corporation H11G1M, H11G2M Rev. 1.0.5 www.fairchildsemi.com H11G1M, H11G2M — 6-Pin DIP High Voltage Photodarlington Optocouplers December 2014 As per DIN EN/IEC 60747-5-5, this optocoupler is suitable for “safe electrical insulation” only within the safety limit data. Compliance with the safety ratings shall be ensured by means of protective circuits. Parameter Installation Classifications per DIN VDE 0110/1.89 Table 1, For Rated Mains Voltage Characteristics < 150 VRMS I–IV < 300 VRMS I–IV Climatic Classification 55/100/21 Pollution Degree (DIN VDE 0110/1.89) 2 Comparative Tracking Index Symbol 175 Value Unit Input-to-Output Test Voltage, Method A, VIORM x 1.6 = VPR, Type and Sample Test with tm = 10 s, Partial Discharge < 5 pC 1360 Vpeak Input-to-Output Test Voltage, Method B, VIORM x 1.875 = VPR, 100% Production Test with tm = 1 s, Partial Discharge < 5 pC 1594 Vpeak VIORM Maximum Working Insulation Voltage 850 Vpeak VIOTM Highest Allowable Over-Voltage VPR Parameter 6000 Vpeak External Creepage ≥7 mm External Clearance ≥7 mm External Clearance (for Option TV, 0.4" Lead Spacing) ≥ 10 mm DTI Distance Through Insulation (Insulation Thickness) ≥ 0.5 mm TS Case Temperature(1) 175 °C IS,INPUT Current(1) 350 mA 800 mW Input PS,OUTPUT Output RIO Power(1) Insulation Resistance at TS, VIO = 500 V(1) > 109 Ω Note: 1. Safety limit values – maximum values allowed in the event of a failure. ©2007 Fairchild Semiconductor Corporation H11G1M, H11G2M Rev. 1.0.5 www.fairchildsemi.com 2 H11G1M, H11G2M — 6-Pin DIP High Voltage Photodarlington Optocouplers Safety and Insulation Ratings Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only. Symbol Parameter Value Unit TOTAL DEVICE TSTG Storage Temperature -40 to +125 °C TOPR Operating Temperature -40 to +100 °C Junction Temperature -40 to +125 ºC TJ TSOL PD 260 for 10 seconds °C Total Device Power Dissipation @ TA = 25°C Lead Solder Temperature 290 mW Derate Above 25°C 3.5 mW/°C EMITTER IF Forward Input Current 60 mA VR Reverse Input Voltage 6.0 V Forward Current – Peak (1 µs pulse, 300 pps) 3.0 A LED Power Dissipation @ TA = 25°C 90 mW Derate Above 25°C 1.8 mW/°C IF(pk) PD DETECTOR Collector-Emitter Voltage VCEO PD H11G1M 100 V H11G2M 80 V Photodetector Power Dissipation @ TA = 25°C 200 mW Derate Above 25°C 2.67 mW/°C ©2007 Fairchild Semiconductor Corporation H11G1M, H11G2M Rev. 1.0.5 www.fairchildsemi.com 3 H11G1M, H11G2M — 6-Pin DIP High Voltage Photodarlington Optocouplers Absolute Maximum Ratings TA = 25°C unless otherwise specified. Individual Component Characteristics Symbol Characteristic Test Conditions Device Min. Typ. Max. Unit All 1.3 1.5 V All -1.8 mV/°C 25 V EMITTER VF Forward Voltage ΔVF ΔTA Forward Voltage Temperature Coefficient BVR Reverse Breakdown Voltage CJ Junction Capacitance IR Reverse Leakage Current IF = 10 mA IR = 10 µA All VF = 0 V, f = 1 MHz 3.0 All VF = 1 V, f = 1 MHz VR = 3.0V All 50 pF 65 pF 0.001 10 µA DETECTOR BVCEO Breakdown Voltage Collector to Emitter IC = 1.0 mA, IF = 0 BVCBO Collector to Base IC = 100 µA BVEBO Emitter to Base ICEO Leakage Current Collector to Emitter H11G1M 100 V H11G2M 80 V H11G1M 100 V H11G2M 80 V All 7 10 V VCE = 80 V, IF = 0 H11G1M 100 nA VCE = 60 V, IF = 0 H11G2M 100 nA VCE = 80 V, IF = 0, TA = 80°C H11G1M 100 µA VCE = 60 V, IF = 0, TA = 80°C H11G2M 100 µA Transfer Characteristics Symbol Characteristics Test Conditions Device Min. Typ. Max. Unit All 100 (1000) mA (%) All 5 (500) mA (%) EMITTER CTR VCE(SAT) Current Transfer Ratio, IF = 10 mA, VCE = 1 V Collector to Emitter IF = 1 mA, VCE = 5 V Saturation Voltage IF = 16 mA, IC = 50 mA All 0.85 1.0 V IF = 1 mA, IC = 1 mA All 0.75 1.0 V RL = 100 Ω, IF = 10 mA, VCE = 5 V, f ≤ 30 Hz, Pulse Width ≤ 300 µs All 5 µs All 100 µs SWITCHING TIMES tON Turn-on Time tOFF Turn-off Time Isolation Characteristics Symbol Characteristic Test Conditions VISO Input-Output Isolation Voltage t = 1 Minute CISO Isolation Capacitance VI-O = 0 V, f = 1 MHz RISO Isolation Resistance VI-O = ±500 VDC, TA = 25°C ©2007 Fairchild Semiconductor Corporation H11G1M, H11G2M Rev. 1.0.5 Min. Typ. 4170 Unit VACRMS 0.2 1011 Max. pF Ω www.fairchildsemi.com 4 H11G1M, H11G2M — 6-Pin DIP High Voltage Photodarlington Optocouplers Electrical Characteristics 100 IC – NORMALIZED OUTPUT CURRENT IC – NORMALIZED OUTPUT CURRENT 10 1 Normalized to: VCE = 5 V IF = 1 mA 0.1 0.01 0.001 0.1 1 IF = 50mA 10 IF = 5mA IF = 1mA 1 IF = 0.5mA 0.1 0.01 -60 10 -40 Figure 3. Output Current vs. Input Current 0 20 40 60 80 100 120 Figure 4. Normalized Output Current vs. Temperature 1000 100 Normalized to: VCE = 5 V IF = 1 mA TA = 25˚C IF = 50 mA ICEO – DARK CURRENT (nA) IC – NORMALIZED OUTPUT CURRENT -20 TA – AMBIENT TEMPERATURE (˚C) IF – LED INPUT CURRENT(mA) 10 Normalized to: VCE = 5 V IF = 1 mA TA = 25˚C IF = 10 mA IF = 2 mA IF = 1 mA 1 IF = 0.5 mA 0.1 VCE = 80 V 100 VCE = 30 V 10 VCE = 1 0V 1 0.1 0.01 0.01 1 0 10 10 20 30 40 50 60 70 80 90 100 TA – AMBIENT TEMPERATURE (˚C) VCE – COLLECTOR – EMITTER VOLTAGE (V) Figure 5. Output Current vs. Collector-Emitter Voltage Figure 6. Collector-Emitter Dark Current vs. Ambient Temperature IF – FORWARD CURRENT (mA) 10 RL = 10 Ω RL = 100 Ω RL = 1 kΩ 1 Normalized to: VCC = 5 V IF = 10 mA RL = 100 Ω 0.1 0.1 1 10 ton + toff – TOTAL SWITCHING SPEED (NORMALIZED) Figure 7. Input Current vs. Total Switching Speed (Typical Values) ©2007 Fairchild Semiconductor Corporation H11G1M, H11G2M Rev. 1.0.5 www.fairchildsemi.com 5 H11G1M, H11G2M — 6-Pin DIP High Voltage Photodarlington Optocouplers Typical Performance Curves H11G1M, H11G2M — 6-Pin DIP High Voltage Photodarlington Optocouplers Reflow Profile 300 260°C 280 260 > 245°C = 42 s 240 220 200 180 °C Time above 183°C = 90 s 160 140 120 1.822°C/s Ramp-up rate 100 80 60 40 33 s 20 0 0 60 120 180 270 360 Time (s) Figure 8. Reflow Profile ©2007 Fairchild Semiconductor Corporation H11G1M, H11G2M Rev. 1.0.5 www.fairchildsemi.com 6 Part Number Package Packing Method H11G1M DIP 6-Pin Tube (50 Units) H11G1SM SMT 6-Pin (Lead Bend) Tube (50 Units) H11G1SR2M SMT 6-Pin (Lead Bend) Tape and Reel (1000 Units) H11G1VM DIP 6-Pin, DIN EN/IEC60747-5-5 Option Tube (50 Units) H11G1SVM SMT 6-Pin (Lead Bend), DIN EN/IEC60747-5-5 Option Tube (50 Units) H11G1SR2VM SMT 6-Pin (Lead Bend), DIN EN/IEC60747-5-5 Option Tape and Reel (1000 Units) H11G1TVM DIP 6-Pin, 0.4” Lead Spacing, DIN EN/IEC60747-5-5 Option Tube (50 Units) Note: 2. The product orderable part number system listed in this table also applies to the H11G2M device. Marking Information 1 V 3 H11G1 2 X YY Q 6 4 5 Figure 9. Top Mark Table 1. Top Mark Definitions 1 Fairchild Logo 2 Device Number 3 DIN EN/IEC60747-5-5 Option (only appears on component ordered with this option) 4 One-Digit Year Code, e.g., “4” 5 Digit Work Week, Ranging from “01” to “53” 6 Assembly Package Code ©2007 Fairchild Semiconductor Corporation H11G1M, H11G2M Rev. 1.0.5 www.fairchildsemi.com 7 H11G1M, H11G2M — 6-Pin DIP High Voltage Photodarlington Optocouplers Ordering Information ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. 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