HGTD3N60C3S, HGTP3N60C3
Data Sheet
December 2001
6A, 600V, UFS Series N-Channel IGBTs
Features
The HGTD3N60C3S and the HGTP3N60C3 are MOS gated
high voltage switching devices combining the best features
of MOSFETs and bipolar transistors. These devices have
the high input impedance of a MOSFET and the low on-state
conduction loss of a bipolar transistor. The much lower
on-state voltage drop varies only moderately between 25oC
and 150oC.
• 6A, 600V at TC = 25oC
The IGBT is ideal for many high voltage switching
applications operating at moderate frequencies where low
conduction losses are essential, such as: AC and DC motor
controls, power supplies and drivers for solenoids, relays
and contactors.
• 600V Switching SOA Capability
• Typical Fall Time . . . . . . . . . . . . . . . . 130ns at TJ = 150oC
• Short Circuit Rating
• Low Conduction Loss
• Related Literature
- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”
Packaging
JEDEC TO-252AA
Formerly developmental type TA49113.
COLLECTOR
(FLANGE)
Ordering Information
PART NUMBER
PACKAGE
G
BRAND
HGTD3N60C3S
TO-252AA
G3N60C
HGTP3N60C3
TO-220AB
G3N60C
E
NOTE: When ordering, use the entire part number. Add the suffix 9A
to obtain the TO-252AA variant in Tape and Reel, i.e.,
HGTD3N60C3S9A.
JEDEC TO-220AB
E
C
G
Symbol
C
COLLECTOR
(FLANGE)
G
E
Fairchild CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS
4,364,073
4,417,385
4,430,792
4,443,931
4,466,176
4,516,143
4,532,534
4,587,713
4,598,461
4,605,948
4,620,211
4,631,564
4,639,754
4,639,762
4,641,162
4,644,637
4,682,195
4,684,413
4,694,313
4,717,679
4,743,952
4,783,690
4,794,432
4,801,986
4,803,533
4,809,045
4,809,047
4,810,665
4,823,176
4,837,606
4,860,080
4,883,767
4,888,627
4,890,143
4,901,127
4,904,609
4,933,740
4,963,951
4,969,027
©2001 Fairchild Semiconductor Corporation
HGTD3N60C3S, HGTP3N60C3 Rev. B
HGTD3N60C3S, HGTP3N60C3
Absolute Maximum Ratings TC = 25oC
Collector to Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .BVCES
Collector Current Continuous
At TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC25
At TC = 110oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC110
Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ICM
Gate to Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGES
Gate to Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VGEM
Switching Safe Operating Area at TJ = 150oC (Figure 14) . . . . . . . . . . . . . . . . . . . . . . SSOA
Power Dissipation Total at TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD
Power Dissipation Derating TC > 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Reverse Voltage Avalanche Energy . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . EARV
Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL
Package Body for 10s, see Tech Brief 334. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .Tpkg
Short Circuit Withstand Time (Note 2) at VGE = 10V (Figure 6) . . . . . . . . . . . . . . . . . . . . .tSC
ALL TYPES
600
UNITS
V
6
3
24
±20
±30
18A at 480V
33
0.27
100
-40 to 150
A
A
A
V
V
W
W/oC
mJ
oC
oC
oC
300
260
8
µs
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTES:
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. VCE(PK) = 360V, TJ = 125oC, RG = 82Ω.
Electrical Specifications
TC = 25oC, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
Collector to Emitter Breakdown Voltage
BVCES
IC = 250µA, VGE = 0V
Emitter to Collector Breakdown Voltage
BVECS
IC = 3mA, VGE = 0V
Collector to Emitter Leakage Current
Collector to Emitter Saturation Voltage
Gate to Emitter Threshold Voltage
Gate to Emitter Leakage Current
Switching SOA
Gate to Emitter Plateau Voltage
On-State Gate Charge
Current Turn-On Delay Time
Current Rise Time
Current Turn-Off Delay Time
ICES
VCE(SAT)
VGE(TH)
IGES
SSOA
VGEP
Qg(ON)
td(ON)I
trI
td(OFF)I
VCE = BVCES
IC = IC110,
VGE = 15V
MIN
TYP
MAX
UNITS
600
-
-
V
16
30
-
V
TC = 25oC
-
-
250
µA
TC = 150oC
-
-
2.0
mA
TC = 25oC
-
1.65
2.0
V
-
1.85
2.2
V
3.0
5.5
6.0
V
TC = 150oC
IC = 250µA, VCE = VGE TC = 25oC
VGE = ±25V
-
-
±250
nA
VCE(PK) = 480V
18
-
-
A
VCE(PK) = 600V
2
-
-
A
IC = IC110, VCE = 0.5 BVCES
-
8.3
-
V
IC = IC110,
VCE = 0.5 BVCES
VGE = 15V
-
10.8
13.5
nC
VGE = 20V
-
13.8
17.3
nC
-
5
-
ns
-
10
-
ns
-
325
400
ns
-
130
275
ns
-
85
-
µJ
TJ = 150oC,
RG = 82Ω,
VGE = 15V, L = 1mH
TJ = 150oC
ICE = IC110
VCE(PK) = 0.8 BVCES
VGE = 15V
RG = 82Ω
Current Fall Time
tfI
Turn-On Energy
EON
Turn-Off Energy (Note 3)
EOFF
-
245
-
µJ
Thermal Resistance
RθJC
-
-
3.75
oC/W
L = 1mH
Test Circuit (Figure 18)
NOTE:
3. Turn-Off Energy Loss (EOFF) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and ending
at the point where the collector current equals zero (ICE = 0A). The HGTP3N60C3 and HGTD3N60C3S were tested per JEDEC standard No.
24-1 Method for Measurement of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss. TurnOn losses include diode losses.
©2001 Fairchild Semiconductor Corporation
HGTD3N60C3S, HGTP3N60C3 Rev. B
HGTD3N60C3S, HGTP3N60C3
20
DUTY CYCLE