HGTD3N60C3S9A

HGTD3N60C3S, HGTP3N60C3 Data Sheet December 2001 6A, 600V, UFS Series N-Channel IGBTs Features The HGTD3N60C3S and the HGTP3N60C3 are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC. • 6A, 600V at TC = 25oC The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as: AC and DC motor controls, power supplies and drivers for solenoids, relays and contactors. • 600V Switching SOA Capability • Typical Fall Time . . . . . . . . . . . . . . . . 130ns at TJ = 150oC • Short Circuit Rating • Low Conduction Loss • Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards” Packaging JEDEC TO-252AA Formerly developmental type TA49113. COLLECTOR (FLANGE) Ordering Information PART NUMBER PACKAGE G BRAND HGTD3N60C3S TO-252AA G3N60C HGTP3N60C3 TO-220AB G3N60C E NOTE: When ordering, use the entire part number. Add the suffix 9A to obtain the TO-252AA variant in Tape and Reel, i.e., HGTD3N60C3S9A. JEDEC TO-220AB E C G Symbol C COLLECTOR (FLANGE) G E Fairchild CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS 4,364,073 4,417,385 4,430,792 4,443,931 4,466,176 4,516,143 4,532,534 4,587,713 4,598,461 4,605,948 4,620,211 4,631,564 4,639,754 4,639,762 4,641,162 4,644,637 4,682,195 4,684,413 4,694,313 4,717,679 4,743,952 4,783,690 4,794,432 4,801,986 4,803,533 4,809,045 4,809,047 4,810,665 4,823,176 4,837,606 4,860,080 4,883,767 4,888,627 4,890,143 4,901,127 4,904,609 4,933,740 4,963,951 4,969,027 ©2001 Fairchild Semiconductor Corporation HGTD3N60C3S, HGTP3N60C3 Rev. B HGTD3N60C3S, HGTP3N60C3 Absolute Maximum Ratings TC = 25oC Collector to Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .BVCES Collector Current Continuous At TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC25 At TC = 110oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC110 Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ICM Gate to Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGES Gate to Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VGEM Switching Safe Operating Area at TJ = 150oC (Figure 14) . . . . . . . . . . . . . . . . . . . . . . SSOA Power Dissipation Total at TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD Power Dissipation Derating TC > 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Reverse Voltage Avalanche Energy . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . EARV Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG Maximum Temperature for Soldering Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL Package Body for 10s, see Tech Brief 334. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .Tpkg Short Circuit Withstand Time (Note 2) at VGE = 10V (Figure 6) . . . . . . . . . . . . . . . . . . . . .tSC ALL TYPES 600 UNITS V 6 3 24 ±20 ±30 18A at 480V 33 0.27 100 -40 to 150 A A A V V W W/oC mJ oC oC oC 300 260 8 µs CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. NOTES: 1. Repetitive Rating: Pulse width limited by maximum junction temperature. 2. VCE(PK) = 360V, TJ = 125oC, RG = 82Ω. Electrical Specifications TC = 25oC, Unless Otherwise Specified PARAMETER SYMBOL TEST CONDITIONS Collector to Emitter Breakdown Voltage BVCES IC = 250µA, VGE = 0V Emitter to Collector Breakdown Voltage BVECS IC = 3mA, VGE = 0V Collector to Emitter Leakage Current Collector to Emitter Saturation Voltage Gate to Emitter Threshold Voltage Gate to Emitter Leakage Current Switching SOA Gate to Emitter Plateau Voltage On-State Gate Charge Current Turn-On Delay Time Current Rise Time Current Turn-Off Delay Time ICES VCE(SAT) VGE(TH) IGES SSOA VGEP Qg(ON) td(ON)I trI td(OFF)I VCE = BVCES IC = IC110, VGE = 15V MIN TYP MAX UNITS 600 - - V 16 30 - V TC = 25oC - - 250 µA TC = 150oC - - 2.0 mA TC = 25oC - 1.65 2.0 V - 1.85 2.2 V 3.0 5.5 6.0 V TC = 150oC IC = 250µA, VCE = VGE TC = 25oC VGE = ±25V - - ±250 nA VCE(PK) = 480V 18 - - A VCE(PK) = 600V 2 - - A IC = IC110, VCE = 0.5 BVCES - 8.3 - V IC = IC110, VCE = 0.5 BVCES VGE = 15V - 10.8 13.5 nC VGE = 20V - 13.8 17.3 nC - 5 - ns - 10 - ns - 325 400 ns - 130 275 ns - 85 - µJ TJ = 150oC, RG = 82Ω, VGE = 15V, L = 1mH TJ = 150oC ICE = IC110 VCE(PK) = 0.8 BVCES VGE = 15V RG = 82Ω Current Fall Time tfI Turn-On Energy EON Turn-Off Energy (Note 3) EOFF - 245 - µJ Thermal Resistance RθJC - - 3.75 oC/W L = 1mH Test Circuit (Figure 18) NOTE: 3. Turn-Off Energy Loss (EOFF) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and ending at the point where the collector current equals zero (ICE = 0A). The HGTP3N60C3 and HGTD3N60C3S were tested per JEDEC standard No. 24-1 Method for Measurement of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss. TurnOn losses include diode losses. ©2001 Fairchild Semiconductor Corporation HGTD3N60C3S, HGTP3N60C3 Rev. B HGTD3N60C3S, HGTP3N60C3 20 DUTY CYCLE