HMHAA280R1

DATA SHEET www.onsemi.com AC Input, Half Pitch Mini-Flat Package 4-Pin Optocoupler HMHAA280 MPF4 CASE 100AL Description The HMHAA280 series consists of two gallium arsenide infrared emitting diodes, connected in inverse parallel, driving a single silicon phototransistor in a compact 4−pin mini−flat package. The lead pitch is 1.27 mm. MARKING DIAGRAM ON 280 VXYYM1 Features • • • • • • Compact 4−pin Package (2.4 mm Maximum Standoff Height) Half Pitch Leads for Optimum Board Space Savings Current Transfer Ratio: 50–600% Available in Tape and Reel Quantities of 2500 CSA (File #1201524), UL (File #E90700) and VDE (File #136480) Certified This is a Pb−Free Device ON 280 V X YY M1 = onsemi Logo = Device Number = VDE mark (Note: Only appears on parts ordered with VDE option – See order entry table) = One−Digit Year Code = Digit Work Week, Ranging from “01” to “53” = Assembly Package Code Applications • AC Line Monitor • Unknown Polarity DC Sensor • Telephone Line Receiver PIN CONNECTIONS 1 4 COLLECTOR 2 3 EMITTER ORDERING INFORMATION See detailed ordering and shipping information on page 5 of this data sheet. © Semiconductor Components Industries, LLC, 2011 November, 2022 − Rev. 2 1 Publication Order Number: HMHAA280/D HMHAA280 ABSOLUTE MAXIMUM RATINGS (TA = 25°C, unless otherwise noted) Symbol Parameter Value Unit TOTAL PACKAGE TSTG Storage Temperature −55 to + 125 °C TOPR Operating Temperature −55 to + 100 °C EMITTER IF (avg) Continuous Forward Current 50 mA IF (pk) Peak Forward Current (1ms pulse, 300 pps.) 1 A VR Reverse Input Voltage 6 V PD Power Dissipation Derate Linearly (above 25°C) 60 0.6 mW mW/°C Continuous Collector Current 50 mA Power Dissipation Derate Linearly (above 25°C) 150 1.5 mW mW/°C VCEO Collector−Emitter Voltage 80 V VECO Emitter−Collector Voltage 7 V DETECTOR PD ELECTRICAL CHARACTERISTICS (TA = 25°C) Symbol Parameter Test Condition Min Typ Max Unit INDIVIDUAL COMPONENT CHARACTERISTICS Emitter VF Forward Voltage IF = ±5 mA − − 1.4 V IR Reverse Current VR = 5 V − − 5 mA BVCEO Breakdown Voltage Collector to Emitter IC = 0.5 mA, IF = 0 80 − − V BVECO Emitter to Collector IE = 100 mA, IF = 0 7 − − ICEO Collector Dark Current VCE = 80 V, IF = 0 − − 100 nA CCE Capacitance VCE = 0 V, f = 1 MHz − 10 − pF % Detector TRANSFER CHARACTERISTICS DC Current Transfer Ratio IF = ±5 mA, VCE = 5 V 50 − 600 CTR Symmetry IF = ±5 mA, VCE = 5 V 0.33 − 3.0 Saturation Voltage IF = ±8 mA, IC = 2.4 mA − − 0.4 V tr Rise Time (Non−Saturated) IC = 2 mA, VCE = 5 V, RL = 100 W − 3 − ms tf Fall Time (Non−Saturated) IC = 2 mA, VCE = 5 V, RL = 100 W − 3 − ms 3750 − − VRMS CTR VCE(SAT) ISOLATION CHARACTERISTICS VISO Steady State Isolation Voltage 1 Minute Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. *All typicals at TA = 25°C. www.onsemi.com 2 HMHAA280 TYPICAL PERFORMANCE CHARACTERISTICS 100 TA = 25°C IC, COLLECTOR CURRENT (mA) IF, FORWARD CURRENT (mA) 100 10 1 0.6 0.8 1.0 1.2 VCE = 5 V 10 VCE = 0.4 V 1 0.1 1.6 1.4 VCE = 10 V 1 10 IF, FORWARD CURRENT (mA) VF, FORWARD VOLTAGE (V) Figure 2. Collector Current vs. Forward Current Figure 1. Forward Current vs. Forward Voltage 2.0 NORMALIZED CTR (IF) / CTR (5 mA) TA = 25°C VCE = 10 V VCE = 5 V 100 VCE = 0.4 V 10 1 10 IF = 5 mA 1.0 IF = 10 mA 0.5 IF = 1 mA 0.0 IF = 0.5 mA −0.5 −40 100 −20 0 20 VCE = 5 V IF = 25 mA IF = 5 mA IF = 10 mA IF = 1 mA 1 IF = 0.5 mA −20 60 80 Figure 4. Normalized CTR vs. Temperature 100 0.1 −40 40 TA, AMBIENT TEMPERATURE (°C) Figure 3. Current Transfer Ratio vs. Forward Current 10 Normalized to: IF = 5 mA VCE = 5 V TA = 25°C 1.5 IF, FORWARD CURRENT (mA) IC, COLLECTOR CURRENT (mA) IC / IF, CURRENT TRANSFER RATIO (%) 1000 100 0 20 40 60 80 100 TA, AMBIENT TEMPERATURE (°C) Figure 5. Collector Current vs. Temperature www.onsemi.com 3 100 HMHAA280 TYPICAL PERFORMANCE CHARACTERISTICS (continued) 18 TA = 25°C 40 IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA) 50 IF = 50 mA IF = 40 mA IF = 30 mA 30 IF = 10 mA IF = 20 mA 20 IF = 5.0 mA 10 IF = 1.0 mA 0 0 1 2 3 4 5 6 7 8 IF = 40 mA 14 IF = 30 mA 12 IF = 20 mA 10 IF = 10 mA 8 IF = 5 mA 6 4 IF = 0.5 mA 2 0.2 1000 SWITCHING TIME (ms) VCE = 48 V VCE = 24 V VCE = 10 V 0.01 TA = 25°C IF = 16 mA VCC = 5 V 100 20 40 60 80 10 1 0.1 100 tON 10 1 RL, LOAD RESISTANCE (kW) Figure 8. Collector Dark Current vs. Temperature Figure 9. Switching Time vs. Load Resistance 0.30 IF = 5 mA IC = 1 mA 0.28 0.26 0.24 0.22 0.20 0.18 0.16 0.14 0.12 −40 −20 1.0 tS TA, AMBIENT TEMPERATURE (°C) 0.10 0.8 tOFF VCE = 5 V 0.001 0 0.6 Figure 7. Collector Current vs. Collector−Emitter Voltage 10 VCE(SAT), COLLECTOR−EMITTER SATURATION VOLTAGE (V) ICEO, COLLECTOR DARK CURRENT (mA) Figure 6. Collector Current vs. Collector−Emitter Voltage 0.1 0.4 VCE, COLLECTOR−EMITTER VOLTAGE (V) VCE, COLLECTOR−EMITTER VOLTAGE (V) 1 IF = 2 mA IF = 1.0 mA 0 0.0 10 9 IF = 50 mA 16 0 20 40 60 80 100 TA, AMBIENT TEMPERATURE (°C) Figure 10. Collector−Emitter Saturation Voltage vs. Temperature www.onsemi.com 4 100 HMHAA280 REFLOW PROFILE (Heating) to 30 s Package Surface Temperature T (°C) 230°C (peak temperature) 210°C 180°C to 60 s 150 s 90 s 80 s Time (s) • Peak reflow temperature: 230°C (package surface temperature) for 30 seconds • Time of temperature higher than 210°C: 60 seconds or less • One time soldering reflow is recommended ORDERING INFORMATION Package Shipping† HMHAA280 MFP−4 100 Units / Tube HMHAA280R2 MFP−4 2500 / Tape & Reel HMHAA280R2V MFP−4, VDE Option 2500 / Tape & Reel HMHAA280V MFP−4, VDE Option 100 Units / Tube Device †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. www.onsemi.com 5 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS MFP4 2.5X4.4, 1.27P CASE 100AL ISSUE O DATE 31 AUG 2016 0.3−0.51 PIN ONE 0.61 1.52 1 3 0.55−0.75 4.83 7.87 4.40 (Typ) 6.30−7.29 2 4 2.31−2.69 1.27 2.39 (Max) LAND PATTERN RECOMMENDATION 1.95−2.11 0−0.20 R0.15 (Typ) 2̇\:̇ R0.15 (Typ) 1.27+/− .127 0.30−0.89 0.18−0.25 1.19 (Typ) NOTES: A) NO STANDARD APPLIES TO THIS PACKAGE B) ALL DIMENSIONS ARE IN MILLIMETERS. C) DIMENSIONS ARE EXCLUSIVE OF BURRS, MOLD FLASH, AND TIE BAR EXTRUSION DOCUMENT NUMBER: DESCRIPTION: 98AON13485G MFP4 2.5X4.4, 1.27P Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. 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