IRLM220ATF

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This literature is subject to all applicable copyright laws and is not for resale in any manner. IRLM220A N-Channel A-FET 200 V, 1.13 A, 800 mΩ FEATURES BVDSS = 200 V ν Avalanche Rugged Technology RDS(on) = 0.8 Ω ν Rugged Gate Oxide Technology ν Lower Input Capacitance ID = 1.13 A ν Improved Gate Charge ν Extended Safe Operating Area ν Lower Leakage Current : 10 µA (Max.) @ VDS = 200V ν Lower RDS(ON) : 0.609 Ω (Typ.) D S SOT-223 G D Absolute Maximum Ratings IRLM220ATF Units Drain-to-Source Voltage 200 V Continuous Drain Current (TA=25°C) 1.13 Continuous Drain Current (TA=70°C) 0.9 Symbol VDSS ID Characteristic (1) A IDM Drain Current-Pulsed VGS Gate-to-Source Voltage EAS Single Pulsed Avalanche Energy (2) IAR Avalanche Current (1) EAR Repetitive Avalanche Energy (1) 0.2 mJ dv/dt Peak Diode Recovery dv/dt (3) 5 V/ns 2 W 0.016 W/°C PD TJ , TSTG TL Total Power Dissipation (TA=25°C) * Linear Derating Factor * Operating Junction and 9 A ±20 V 29 mJ 1.13 A - 55 to +150 Storage Temperature Range °C Maximum Lead Temp. for Soldering 300 Purposes, 1/8” from case for 5-seconds Thermal Resistance Symbol RθJA Characteristic Junction-to-Ambient * Typ. Max. Units -- 62.5 °C/W * When mounted on the minimum pad size recommended (PCB Mount). ©1999 Fairchild Semiconductor Corporation IRLM220A Rev. C0 1 www.fairchildsemi.com IRLM220A — N-Channel A-FET November 2013 Part Number IRLM220ATF Top Mark IRLM220A Package SOT-223 Electrical Characteristics T Symbol Packing Method Tape and Reel Min. Typ. M-ax. Units Characteristic Drain-Source Breakdown Voltage Breakdown Voltage Temp. Coeff. IDSS RDS(on) Gate Threshold Voltage 200 -1.0 -- -- 0.18 2.0 -- 100 Gate-Source Leakage , Forward -- -- -100 Gate-Source Leakage , Reverse -- -- 10 -- 100 Drain-to-Source Leakage Current Static Drain-Source On-State Resistance -- V nA See Fig 7 VDS=5V,ID=250µA VGS=20V VGS=--20V VDS=200V VDS=160V,TC=125°C -- -- -- 0.8 Ω VGS=5V,ID=0.57A S VDS=40V,ID=0.57A -- 2.8 -- Ciss Input Capacitance -- 330 430 Coss Output Capacitance -- 55 70 Crss Reverse Transfer Capacitance -- 8 30 td(on) Turn-On Delay Time -- 6 25 Rise Time -- 24 20 Turn-Off Delay Time -- 6 60 Fall Time -- 6 20 Qg Total Gate Charge -- 10.3 15 Qgs Gate-Source Charge -- 2.0 -- Qgd Gate-Drain (“Miller”) Charge -- 4.4 -- tf VGS=0V,ID=250µA -- Forward Transconductance td(off) V Test Condition V/°C ID=250µA µA gfs tr Quantity 4000 units = 25 C unless otherwise noted. ∆BV/∆TJ IGSS Tape Width 12 mm o C BVDSS VGS(th) Reel Size 13 " pF VGS=0V,VDS=25V,f =1MHz See Fig 5 VDD=100V,ID=5A, ns RG=9Ω See Fig 13 (4) VDS=160V,VGS=5V, nC ID=5A See Fig 6 & Fig 12 (4) Source-Drain Diode Ratings and Characteristics Symbol Characteristic IS Continuous Source Current ISM Pulsed-Source Current VSD Min. Typ. Max. Units -- 1.13 -- -- 9 Diode Forward Voltage -- -- 1.5 trr Reverse Recovery Time -- 140 Qrr Reverse Recovery Charge -- 0.59 -(1) A Test Condition Integral reverse pn-diode in the MOSFET V TJ=25°C,IS=1.13A,VGS=0V -- ns TJ=25°C,IF=5A -- µC diF/dt=100A/µs Notes ; ① Repetitive rating : pulse-width limited by maximum junction temperature. ② L = 35 mH, IAS = 1.13 A, VDD = 50 V, RG = 27 Ω, starting TJ = 25°C. ③ ISD ≤ 5 A, di/dt ≤ 180 A/µs, VDD ≤ BVDSS , starting TJ = 25°C. ④ Essentially independent of operating temperature. ©1999 Fairchild Semiconductor Corporation IRLM220A Rev. C0 2 www.fairchildsemi.com IRLM220A — N-Channel A-FET Package Marking and Ordering Information IRLM220A — N-Channel A-FET  !    Fig 1. Output Characteristics Fig 2. Transfer Characteristics V GS 100 Top : 7.0 V 6.0 V 5.5 V 5.0 V 4.5 V 4.0 V 3.5 V Bottom : 3.0 V 101 ID , Drain Current [A] ID , Drain Current [A] 101 @ Notes : 1. 250 µs Pulse Test 2. T = 25 oC 10-1 C 10-1 100 150 oC 100 25 oC 10-1 101 @ Notes : 1. VGS = 0 V 2. VDS = 40 V 3. 250 µs Pulse Test - 55 oC 0 2 4 6 8 10 VDS , Drain-Source Voltage [V] VGS , Gate-Source Voltage [V] Fig 3. On-Resistance vs. Drain Current Fig 4. Source-Drain Diode Forward Voltage IDR , Reverse Drain Current [A] RDS(on) , [ Ω ] Drain-Source On-Resistance 2.0 1.5 VGS = 5 V 1.0 0.5 VGS = 10 V o @ Note : TJ = 25 C 0.0 0 3 6 9 12 15 101 100 25 oC 10-1 0.4 18 @ Notes : 1. VGS = 0 V 2. 250 µs Pulse Test 150 oC 0.6 0.8 1.0 1.2 1.4 1.6 1.8 ID , Drain Current [A] VSD , Source-Drain Voltage [V] Fig 5. Capacitance vs. Drain-Source Voltage Fig 6. Gate Charge vs. Gate-Source Voltage 500 C iss 6 VDS = 40 V VGS , Gate-Source Voltage [V] Capacitance [pF] 400 Ciss= Cgs+ Cgd ( Cds= shorted ) Coss= ds+ Cgd Crss= gd 300 200 C oss 100 C rss @ Notes : 1. VGS = 0 V 2. f = 1 MHz 00 10 VDS = 160 V 4 2 @ Notes : ID = 5 A 0 0 1 10 2 6 8 10 12 QG , Total Gate Charge [nC] VDS , Drain-Source Voltage [V] ©1999 Fairchild Semiconductor Corporation IRLM220A Rev. C0 VDS = 100 V 3 www.fairchildsemi.com IRLM220A — N-Channel A-FET  !   



   Fig 7. Breakdown Voltage vs. Temperature Fig 8. On-Resistance vs. Temperature 2.5 RDS(on) , (Normalized) Drain-Source On-Resistance BVDSS , (Normalized) Drain-Source Breakdown Voltage 1.2 1.1 1.0 0.9 @ Notes : 1. V = 0 V GS 2.0 1.5 1.0 @ Notes : 1. VGS = 5 V 2. ID = 2.5 A 0.5 2. I = 250 µA D 0.8 -75 -50 -25 0 25 50 75 100 125 150 0.0 -75 175 -50 -25 o 102 0 25 50 75 100 125 150 175 TJ , Junction Temperature [oC] TJ , Junction Temperature [ C] Fig 9. Max. Safe Operating Area Fig 10. Max. Drain Current vs. Ambient Temperature 1.5 101 100 µs 1 ms 10 ms 0 10 10-1 -2 10 10-3 -1 10 ID , Drain Current [A] ID , Drain Current [A] Operation in This Area is Limited by R DS(on) DC @ Notes : 1. TC = 25 oC 2. TJ = 150 oC 3. Single Pulse 100 101 1.0 0.5 0.0 25 102 50 Thermal Response 102 Z (t) , 100 75 100 125 150 TA , Ambient Temperature [oC] VDS , Drain-Source Voltage [V] Fig 11. Thermal Response D=0.5 101 0.2 @ Notes : 1. J A (t)=62.5 0.1 0.05 o θ 2 2. 0.02 3. 0.01 C/W Max. ty Factor, D=t1 /t2 JM -TA =PD M *Z θJA (t) PDM t1 θJA single pulse t2 -1 10 10- 5 10- 4 10- 3 10- 2 10- 1 100 t 1 , Square Wave Pulse Duration ©1999 Fairchild Semiconductor Corporation IRLM220A Rev. C0 4 101 102 103 [sec] www.fairchildsemi.com IRLM220A — N-Channel A-FET 50KΩ 50K Ω 200nF 200n F 12V VGS Same Same Type as DU DUT T Qg 300nF 300n F VDS VGS Qgs Qgd DUT DU T IG = const. Charrge Cha Figure 12. Gate Charge Test Circuit & Waveform VDS RG RL VDS 90% VDD VGS VGS DUT DUT VGS 10% 10% td(on d( on)) tr td(o d( of f) t on t of offf tf Figure 13. Resistive Switching Test Circuit & Waveforms VDS BVDSS 1 EAS = ---- L IAS2 -------------------2 BVDS DSS S - VDD L BVDS DSS S IAS ID RG VGS VDD ID (t) VDS (t) VDD DUT tp Ti Tim me tp Figure 14. Unclamped Inductive Switching Test Circuit & Waveforms ©1999 Fairchild Semiconductor Corporation IRLM220A Rev. C0 5 www.fairchildsemi.com IRLM220A — N-Channel A-FET DUT + VDS _ I SD L Driver Driv er RG VGS VGS ( Driv Driver er ) I SD ( DUT ) Same Type Same as DUT VDD • dv/dt cont ntrrolled by RG • ISD con onttrol ollled by pu pullse pe perriod Gate Pul ulsse W idth D = -------------------------Gate Ga te Pu Pullse Pe Perriod 10V 10 V IFM , Body Body Di Diod ode e Forward Curr rren entt di/d di /dtt IRM Body Bo dy Diod ode e Reverse Curren entt VDS ( DUT ) Body Bo dy Di Diod ode e Recov cove ery dv dv/d /dtt VSD VDD Body Diode Body For Forw ward Vol olttag age e Dr Drop op Figure 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms ©1999 Fairchild Semiconductor Corporation IRLM220A Rev. C0 6 www.fairchildsemi.com IRLM220A — N-Channel A-FET Mechanical Dimensions Figure 16. SOT-223, Molded, 4-Lead Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions, specifically the warranty therein, which covers Fairchild products. Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings: http://www.fairchildsemi.com/package/packageDetails.html?id=PN_TTE23-004 ©1999 Fairchild Semiconductor Corporation IRLM220A Rev. C0 7 www.fairchildsemi.com tm *Trademarks of System General Corporation, used under license by Fairchild Semiconductor. DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. 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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative / In Design Datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. No Identification Needed Full Production Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve the design. Obsolete Not In Production Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I66 ©1999 Fairchild Semiconductor Corporation IRLM220A Rev. C0 8 www.fairchildsemi.com IRLM220A — N-Channel A-FET TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. Sync-Lock™ F-PFS™ AccuPower™ ® FRFET® AX-CAP®* ®* ® SM BitSiC™ Global Power Resource PowerTrench GreenBridge™ PowerXS™ Build it Now™ TinyBoost® Green FPS™ Programmable Active Droop™ CorePLUS™ TinyBuck® ® Green FPS™ e-Series™ QFET CorePOWER™ TinyCalc™ QS™ Gmax™ CROSSVOLT™ TinyLogic® Quiet Series™ GTO™ CTL™ TINYOPTO™ RapidConfigure™ IntelliMAX™ Current Transfer Logic™ TinyPower™ ISOPLANAR™ DEUXPEED® ™ TinyPWM™ Dual Cool™ Marking Small Speakers Sound Louder TinyWire™ EcoSPARK® Saving our world, 1mW/W/kW at a time™ and Better™ TranSiC™ EfficentMax™ SignalWise™ MegaBuck™ TriFault Detect™ ESBC™ SmartMax™ MICROCOUPLER™ TRUECURRENT®* SMART START™ MicroFET™ ® SerDes™ Solutions for Your Success™ MicroPak™ SPM® MicroPak2™ Fairchild® STEALTH™ MillerDrive™ Fairchild Semiconductor® UHC® SuperFET® MotionMax™ FACT Quiet Series™ ® Ultra FRFET™ SuperSOT™-3 mWSaver FACT® UniFET™ SuperSOT™-6 OptoHiT™ FAST® VCX™ SuperSOT™-8 OPTOLOGIC® FastvCore™ VisualMax™ OPTOPLANAR® SupreMOS® FETBench™ VoltagePlus™ SyncFET™ FPS™ XS™ ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. 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