IRLM120ATF

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This literature is subject to all applicable copyright laws and is not for resale in any manner. IRLM120A Advanced Power MOSFET FEATURES BVDSS = 100 V n Avalanche Rugged Technology RDS(on) = 0.22 Ω n Rugged Gate Oxide Technology n Lower Input Capacitance ID = 2.3 A n Improved Gate Charge n Extended Safe Operating Area SOT-223 n Lower Leakage Current : 10 µA (Max.) @ VDS = 100V n Lower RDS(ON) : 0.176 Ω (Typ.) 2 1 3 1. Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol VDSS Characteristic Value Drain-to-Source Voltage o ID Units V 100 Continuous Drain Current (TC=25 C) 2.3 o Continuous Drain Current (TC=70 C) A 1.85 IDM Drain Current-Pulsed VGS Gate-to-Source Voltage EAS Single Pulsed Avalanche Energy (2) (1) 18 A ±20 V 105 mJ IAR Avalanche Current (1) 2.3 A EAR Repetitive Avalanche Energy (1) 0.27 mJ dv/dt Peak Diode Recovery dv/dt (3) 6.5 V/ns o PD Total Power Dissipation (TC=25 C) * Linear Derating Factor * 2.7 W 0.022 W/ C o Operating Junction and TJ, TSTG - 55 to +150 Storage Temperature Range o Maximum Lead Temp. for Soldering TL C 300 Purposes, 1/8” from case for 5-seconds Thermal Resistance Symbol Characteristic Typ. Max. RθJA Junction-to-Ambient * -- 46.3 Units o C/W * When mounted on the minimum pad size recommended (PCB Mount). 1 N-CHANNEL POWER MOSFET IRLM120A Electrical Characteristics (TC=25 oC unless otherwise specified) Symbol Characteristic BVDSS Drain-Source Breakdown Voltage VGS(th) IGSS IDSS RDS(on) Breakdown Voltage Temp. Coeff. Gate Threshold Voltage Gate-Source Leakage , Forward Gate-Source Leakage , Reverse Drain-to-Source Leakage Current Static Drain-Source On-State Resistance 100 -- -- -- 0.09 -- 1.0 -- 2.0 -- -- 100 V nA See Fig 7 VDS=5V,ID=250µA VGS=20V VGS=-20V -- -100 -- 10 -- -- 100 -- -- 0.22 Ω VGS=5V,ID=1.15A (4) -- VDS=40V,ID=1.15A (4) Forward Transconductance -- 4.6 Input Capacitance -- 340 440 Coss Output Capacitance -- 90 115 Crss Reverse Transfer Capacitance -- 39 50 td(on) Turn-On Delay Time -- 5 20 Rise Time -- 10 30 Turn-Off Delay Time -- 19 50 Fall Time -- 9 30 tf V/ C ID=250µA -- gfs td(off) VGS=0V,ID=250µA o -- Ciss tr V Test Condition Ω ∆BV/∆TJ Min. Typ. Max. Units Qg Total Gate Charge -- 10.2 15 Qgs Gate-Source Charge -- 1.7 -- Qgd Gate-Drain (“Miller”) Charge -- 6.0 -- µA pF VDS=100V o VDS=80V,TC=125 C VGS=0V,VDS=25V,f =1MHz See Fig 5 VDD=50V,ID=9.2A, ns RG=9 Ω See Fig 13 (4)(5) VDS=80V,VGS=5V, nC ID=9.2A See Fig 6 & Fig 12 (4)(5) Source-Drain Diode Ratings and Characteristics Symbol Characteristic IS Continuous Source Current Min. Typ. Max. Units -- -- 2.3 A Test Condition Integral reverse pn-diode ISM Pulsed-Source Current (1) -- -- 18 VSD Diode Forward Voltage (4) -- -- 1.5 V TJ=25 C,IS=2.3A,VGS=0V trr Reverse Recovery Time -- 98 -- ns TJ=25 C,IF=9.2A Qrr Reverse Recovery Charge -- 0.34 -- µC diF/dt=100A/µs in the MOSFET o o (4) Notes ; ① Repetitive Rating : Pulse Width Limited by Maximum Junction Temperature ② L=30mH, IAS=2.3A, VDD=25V, RG=27Ω, Starting TJ =25 oC ③ ISD < 9.2A, di/dt < 300A/μs, VDD < BVDSS , Starting TJ =25 oC ④ Pulse Test : Pulse Width = 250µs, Duty Cycle < 2% ⑤ Essentially Independent of Operating Temperature 2 N-CHANNEL POWER MOSFET IRLM120A Fig 1. Output Characteristics Fig 2. Transfer Characteristics VGS ID , Drain Current [A] 101 7.0 V 6.0 V 5.5 V 5.0 V 4.5 V 4.0 V 3.5 V Bottom : 3.0 V ID , Drain Current [A] Top : 100 @ Notes : 1. 250 µs Pulse Test 2. TC = 25 oC 10-1 -1 10 100 101 150 oC 100 25 oC @ Notes : 1. VGS = 0 V 2. VDS = 40 V 3. 250 µs Pulse Test - 55 oC 10-1 101 0 2 4 6 8 10 VDS , Drain-Source Voltage [V] VGS , Gate-Source Voltage [V] Fig 3. On-Resistance vs. Drain Current Fig 4. Source-Drain Diode Forward Voltage IDR , Reverse Drain Current [A] Drain-Source On-Resistance VGS = 5 V 0.3 0.2 0.1 VGS = 10 V @ Note : TJ = 25 oC 0.0 0 10 20 30 40 101 100 @ Notes : 1. VGS = 0 V 2. 250 µs Pulse Test 150 oC 25 oC 10-1 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 ID , Drain Current [A] VSD , Source-Drain Voltage [V] Fig 5. Capacitance vs. Drain-Source Voltage Fig 6. Gate Charge vs. Gate-Source Voltage 600 360 C iss Ciss= Cgs+ Cgd ( Cds= shorted ) Coss= Cds+ Cgd Crss= Cgd C oss 240 @ Notes : 1. VGS = 0 V 2. f = 1 MHz C rss 120 00 10 101 VDS , Drain-Source Voltage [V] 6 VDS = 20 V VGS , Gate-Source Voltage [V] 480 Capacitance [pF] RDS(on) , [ Ω ] 0.4 VDS = 50 V VDS = 80 V 4 2 @ Notes : ID = 9.2 A 0 0 2 4 6 8 10 12 QG , Total Gate Charge [nC] 3 N-CHANNEL POWER MOSFET IRLM120A Fig 7. Breakdown Voltage vs. Temperature Fig 8. On-Resistance vs. Temperature 1.1 1.0 0.9 @ Notes : 1. V = 0 V GS Drain-Source On-Resistance 2.5 RDS(on) , (Normalized) BVDSS , (Normalized) Drain-Source Breakdown Voltage 1.2 2.0 1.5 1.0 @ Notes : 1. V = 5 V 0.5 GS 2. ID = 4.6 A 2. ID = 250 µA 0.8 -75 -50 -25 0 25 50 75 100 125 150 0.0 -75 175 -50 -25 o 102 0 25 50 75 100 125 150 175 TJ , Junction Temperature [oC] TJ , Junction Temperature [ C] Fig 9. Max. Safe Operating Area Fig 10. Max. Drain Current vs. Case Temperature 10 ID , Drain Current [A] 100 µs 101 1 ms 10 ms DC 100 @ Notes : 1. TC = 25 oC 2. TJ = 150 oC 3. Single Pulse 8 6 4 2 10-1 0 10 101 0 25 102 50 100 125 150 Fig 11. Thermal Response 101 Thermal Response 75 Tc , Case Temperature [oC] VDS , Drain-Source Voltage [V] D=0.5 100 0.2 @ Notes : 1. Z J C (t)=3.5 o C/W Max. 0.1 0.05 10- 1 θ 2. Duty Factor, D=t1 /t2 0.02 3. TJ M -TC =PD M *Zθ J C (t) 0.01 PDM single pulse t1 θJC Z (t) , ID , Drain Current [A] Operation in This Area is Limited by R DS(on) t2 -2 10 10- 5 10- 4 10- 3 10- 2 10- 1 t 1 , Square Wave Pulse Duration 100 101 [sec] 4 N-CHANNEL POWER MOSFET IRLM120A Fig 12. Gate Charge Test Circuit & Waveform * Current Regulator ” VGS Same Type as DUT 50KΩ Qg 200nF 12V 10V 300nF VDS Qgs VGS Qgd DUT 3mA R1 R2 Current Sampling (IG) Resistor Current Sampling (ID) Resistor Charge Fig 13. Resistive Switching Test Circuit & Waveforms RL Vout Vout 90% VDD Vin ( 0.5 rated VDS ) RG DUT Vin 10% 10V td(on) tr td(off) t on tf t off Fig 14. Unclamped Inductive Switching Test Circuit & Waveforms BVDSS 1 EAS = ---- LL IAS2 -------------------2 BVDSS -- VDD LL VDS Vary tp to obtain required peak ID BVDSS IAS ID RG C DUT ID (t) VDD VDS (t) VDD 5V tp tp Time 5 N-CHANNEL POWER MOSFET IRLM120A Fig 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms DUT + VDS -- IS L Driver VGS RG VGS VGS ( Driver ) Same Type as DUT VDD • dv/dt controlled by ＂RG＂ • IS controlled by Duty Factor ＂D＂ Gate Pulse Width D = -------------------------Gate Pulse Period 10V IFM , Body Diode Forward Current IS ( DUT ) di/dt IRM Body Diode Reverse Current VDS ( DUT ) Body Diode Recovery dv/dt Vf VDD Body Diode Forward Voltage Drop 6 TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. 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