ISL9R1560G2-F085

STEALTHt Rectifier 15 A, 600 V ISL9R1560G2-F085 Description The ISL9R1560G2−F085 is Stealth diode optimized for low loss performance in high frequency hard switched applications. The Stealth family exhibits low reverse recovery current (IRM(REC)) and exceptionally soft recovery under typical operating conditions. This device is intended for use as a free wheeling or boost diode in power supplies and other power switching applications. The low IRRM and short ta phase reduce loss in switching transistors. The soft recovery minimizes ringing, expanding the range of conditions under which the diode may be operated without the use of additional snubber circuitry. Consider using the Stealth] diode with an SMPS IGBT to provide the most efficient and highest power density design at lower cost. www.onsemi.com 2. ANODE 1. CATHODE TO−247−2LD CASE 340CL Features • • • • • High Speed Switching (trr = 26 ns(Typ.) @ IF = 15 A) Low Forward Voltage (VF = 2.2 V(Max) @ IF = 15 A) Avalanche Energy Rated AEC−Q101 Qualified and PPAP Capable This Device is Pb−Free 1 1. Cathode Applications • • • • 2 2. Anode Automotive DC/DC Converter Automotive On Board Charger Switching Power Supply Power Switching Circuits MARKING DIAGRAM $Y&Z&3&K R1560G2 $Y &Z &3 &K R1560G2 = ON Semiconductor Logo = Assembly Plant Code = Numeric Date Code = Lot Code = Specific Device Code ORDERING INFORMATION See detailed ordering and shipping information on page 2 of this data sheet. © Semiconductor Components Industries, LLC, 2013 March, 2020 − Rev. 4 1 Publication Order Number: ISL9R1560G2−F085/D ISL9R1560G2−F085 ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Characteristic Symbol Value Unit Peak Repetitive Reverse Voltage VRRM 600 V Working Peak Reverse Voltage VRWM 600 V VR 600 V Average Rectified Forward Current (TC = 25°C) IF(AV) 15 A Non−repetitive Peak Surge Current (Halfwave 1 Phase 50 Hz) IFSM 45 A EAVL 20 mJ TJ, TSTG −55 to +175 °C DC Blocking Voltage Avalanche Energy (1 A, 40 mH) Operating Junction and Storage Temperature Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. PACKAGE MARKING AND ORDERING INFORMATION Device Device Marking Package Tube Quantity ISL9R1560G2−F085 R1560G2 TO−247−2LD − 30 THERMAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Characteristic Symbol Value Unit Maximum Thermal Resistance, Junction to Case RqJC 0.93 °C/W Maximum Thermal Resistance, Junction to Ambient RqJA 45 °C/W ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Parameter Symbol Instantaneous Reverse Current IR Instantaneous Forward Voltage (Note 1) Reverse Recovery Time (Note 2) Reverse Recovery Time VFM trr ta tb Reverse Recovery Charge Avalanche Energy Test Conditions Min Typ Max Unit TC = 25°C − − 100 mA TC = 175°C − − 2 mA TC = 25°C − 1.8 2.2 V TC = 175°C − 1.35 2 V IF = 1 A, di/dt = 200 A/ms, VCC = 390 V TC = 25°C − 20 30 ns IF = 15 A, di/dt = 200 A/ms, VCC = 390 V TC = 25°C − 26 40 ns TC = 175°C − 114 − ns IF = 15 A, di/dt = 200 A/ms, VCC = 390 V TC = 25°C − 15 − ns − 11 − ns − 40 − nC 20 − − mJ VR = 600 V IF = 15 A Qrr EAVL IAV = 1 A, L = 40 mH Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 1. Pulse: Test Pulse Width = 300 ms, Duty Cycle = 2% 2. Guaranteed by design. www.onsemi.com 2 ISL9R1560G2−F085 TYPICAL PERFORMANCE CHARACTERISTICS 100 1000 IR, Reverse Current (mA) IF, Forward Current (A) 100 TC = 175°C 10 TC = 125°C 1 TC = 25°C 0.1 0.1 0.5 1.0 TC = 175°C 10 TC = 125°C 1 0.1 TC = 25°C 0.01 1E−3 1.5 2.0 1E−4 2.5 0 100 Figure 1. Typical Forward Voltage Drop vs. Forward Current trr, Reverse Recovery Time (ns) Cj, Capacitance (pF) 600 IF = 15 A 300 200 100 0 0.1 1 10 150 TC = 175°C 100 TC = 125°C 50 TC = 25°C 0 100 100 200 300 400 500 di/dt (A/ms) VR, Reverse Voltage (V) Figure 4. Typical Reverse Recovery Time vs. di/dt Figure 3. Typical Junction Capacitance 15 50 IF(AV), Average Forward Current (A) IRR, Max Reverse Recovery Current (A) 500 200 Typical Capacitance at 10 V = 58 pF TC = 175°C TC = 125°C 5 TC = 25°C 100 400 Figure 2. Typical Reverse Current vs. Reverse Voltage 400 0 300 VR, Reverse Voltage (V) VF, Forward Voltage (V) 10 200 200 300 di/dt (A/ms) IF = 15 A 400 40 30 20 10 0 25 500 50 75 100 125 150 175 Case Temperature, TC (°C) Figure 5. Typical Reverse recovery Current vs. di/dt Figure 6. Maximum Reverse Recovery Current vs. dIF/dt www.onsemi.com 3 ISL9R1560G2−F085 TYPICAL PERFORMANCE CHARACTERISTICS (continued) Qrr, Reverse Recovery Current (A) 800 IF = 15 A 600 TC = 175°C 400 TC = 125°C 200 TC = 25°C 0 100 200 300 400 500 di/dt (A/ms) Figure 7. Reverse Recovery Charge ZqJC(t), Thermal Response 1 0.1 PDM t1 t2 *Notes: 1. ZqJC(t) = 0.93°C/W Typ. 2. Duty Factor, D = t1/t2 3. TJM − TC = PDM * ZqJC(t) 0.01 10−5 10−4 10−3 10−2 10−1 100 t1, Square Wave Pulse Duration (sec) Figure 8. Transient Thermal Response Curve www.onsemi.com 4 101 102 ISL9R1560G2−F085 TEST CIRCUIT AND WAVEFORMS VGE AMPLITUDE AND RG CONTROL dIF/dt t1 AND t2 Control IF L IF DUT RG VGE CURRENT SENSE trr ta tb 0 + − MOSFET t1 dIF dt 0.25 IRM VDD IRM t2 Figure 10. trr Waveforms and Definitions Figure 9. trr Test Circuit I=1A L = 40 mH R < 0.1 W VDD = 50 V EAVL = 1/2LI2 [VR(AVL)/(VR(AVL) − VDD)] Q1 = IGBT (BVCES > DUT VR(AVL) VAVL L R CURRENT SENSE + VDD DUT VDD − IL I V Q1 0.1 IL t0 t1 t2 t Figure 12. Avalanche Current and Voltage Waveforms Figure 11. Avalanche Energy Test Circuit STEALTH is a trademark of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other countries. www.onsemi.com 5 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS TO−247−2LD CASE 340CL ISSUE A DATE 03 DEC 2019 GENERIC MARKING DIAGRAM* AYWWZZ XXXXXXX XXXXXXX XXXX A Y WW ZZ = Specific Device Code = Assembly Location = Year = Work Week = Assembly Lot Code *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “G”, may or may not be present. Some products may not follow the Generic Marking. DOCUMENT NUMBER: DESCRIPTION: 98AON13850G TO−247−2LD Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. 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