KSA1015OTA

DATA SHEET www.onsemi.com PNP Epitaxial Silicon Transistor KSA1015 1 Features • • • • Low−Frequency Amplifier Collector−Base Voltage: VCBO = −50 V Complement to KSC1815 These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant Parameter Value Unit VCBO Collector−Base Voltage −50 V VCEO Collector−Emitter Voltage −50 V VEBO Emitter−Base Voltage −5 V IC Collector Current −150 mA IB Base Current −50 mA TJ Junction Temperature 150 °C −55 to 150 °C TSTG Storage Temperature Range 3 Bent Lead Tape & Reel Ammo Packing TO−92 3 4.83x4.76 LEADFORMED CASE 135AR ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted) Symbol 2 1. Emitter 2. Collector 3. Base MARKING DIAGRAM A1015 (GR, Y) AYWW A A1015(GR, Y) Y WW = Assembly Site = Device Code = Year of Production, = Work Week Number Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. ORDERING INFORMATION THERMAL CHARACTERISTICS (Note 1) (TA = 25°C unless otherwise noted) Parameter Max Unit Total Device Dissipation 400 mW Derate Above 25°C 3.2 mW/°C Thermal Resistance, Junction to Ambient 312 °C/W Symbol PD RqJA Packing Method Device Marking Package KSA1015GRTA A1015GR TO−92 3L (Pb−Free) Ammo A1015Y TO−92 3L (Pb−Free) Ammo KSA1015YTA 1. PCB size: FR−4, 76 mm x 114 mm x 1.57 mm (3.0 inch x 4.5 inch x 0.062 inch) with minimum land pattern size. © Semiconductor Components Industries, LLC, 2002 December, 2021 − Rev. 2 1 Publication Order Number: KSA1015/D KSA1015 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Symbol Min Typ Max Unit BVCBO Collector−Base Breakdown Voltage Parameter IC = −100 mA, IE = 0 Conditions −50 − − V BVCEO Collector−Emitter Breakdown Voltage IC = −10 mA, IB = 0 −50 − − V BVEBO Emitter−Base Breakdown Voltage IE = −10 mA, IC = 0 −5 − − V ICBO Collector Cut−Off Current VCB = −50 V, IE = 0 − − −0.1 mA IEBO Emitter Cut−Off Current VEB = −5 V, IC = 0 − − −0.1 mA hFE1 DC Current Gain VCE = −6 V, IC = −2 mA 70 − 400 hFE2 DC Current Gain VCE = −6 V, IC = −150 mA 25 − − VCE(sat) Collector−Emitter Saturation Voltage IC = −100 mA, IB = −10 mA − −0.1 −0.3 VBE(sat) Base−Emitter Saturation Voltage IC = −100 mA, IB = −10 mA − − −1.1 V fT Current Gain Bandwidth Product VCE = −10 V, IC = −1 mA 80 − − MHz Cob Output Capacitance VCB = −10 V, IE = 0, f = 1 MHz − 4 7 pF NF Noise Figure VCE = −6 V, IC = −0.1 mA, f = 100 Hz, RG = 10 kW − 0.5 6 dB V Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. hFE CLASSIFICATION Classification O Y GR hFE1 70~140 120~240 200~400 www.onsemi.com 2 KSA1015 TYPICAL PERFORMANCE CHARACTERISTICS 1000 −45 VCE = −6 V IB = −400 mA IB = −350 mA IB = −300 mA IB = −250 mA −40 −35 −30 hFE, DC CURRENT GAIN IC, COLLECTOR CURRENT (V) −50 IB = −200 mA −25 IB = −150 mA −20 −15 IB = −100 mA −10 IB = −50 mA 100 10 −5 0 0 1 −0.1 −2 −4 −6 −8 −10 −12 −14 −16 −18 −20 VCE, COLLECTOR−EMITTER VOLTAGE (V) −1 VBE(sat) −0.1 VCE(sat) −0.01 −0.1 VCE = −6 V IC, COLLECTOR CURRENT (mA) VBE(sat), VCE(sat), SATURATION VOLTAGE (V) −100 IC = 10 IB −1 −10 −10 −1 −0.1 −0.0 −100 IC, COLLECTOR CURRENT (mA) −0.2 −0.4 −0.6 −0.8 −1.0 VBE(sat), BASE−EMITTER VOLTAGE (V) Figure 3. Base−Emitter Saturation Voltage and Collector−Emitter Saturation Voltage Figure 4. Base−Emitter On Voltage 1000 f = 1 MHz IE = 0 VCE = −6 V hFE, DC CURRENT GAIN Cob, CAPACITANCE (pF) −100 Figure 2. DC Current Gain −10 1 −1 −10 IC, COLLECTOR CURRENT (mA) Figure 1. Static Characteristic 10 −1 −10 100 10 −100 VCB(sat), COLLECTOR−BASE VOLTAGE (V) −1 −10 IC, COLLECTOR CURRENT (mA) Figure 5. Collector Output Capacitance Figure 6. Current Gain Bandwidth Product www.onsemi.com 3 −1.2 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS TO−92 3 4.83x4.76 LEADFORMED CASE 135AR ISSUE O DOCUMENT NUMBER: DESCRIPTION: 98AON13879G DATE 30 SEP 2016 Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. TO−92 3 4.83X4.76 LEADFORMED PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. 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