KSA916YTA

PNP Epitaxial Silicon Transistor KSA916 Features • Audio Power Amplifier • Driver Stage Amplifier • Complement to KSC2316 www.onsemi.com ABSOLUTE MAXIMUM RATINGS (Values are at TA = 25°C unless otherwise noted.) Parameter Value Unit VCBO Collector−Base Voltage −120 V VCEO Collector−Emitter Voltage −120 V VEBO Emitter−Base Voltage −5 V −800 mA Symbol IC Collector Current TJ Junction Temperature 150 °C TSTG Storage Temperature −55 to +150 °C TO−92 3 LF CASE 135AM MARKING DIAGRAM AA9 16Y YWW Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1: Emitter 2: Collector 3: Base THERMAL CHARACTERISTICS (Values are at TA = 25°C unless otherwise noted.) (Note 1) Parameter Value Unit Power Dissipation, by RθJA 900 mW Power Dissipation, by RθJC 3 W Derate Above 25_C, by RθJA 7.2 mW/°C Derate Above 25_C, by RθJC 24 mW/°C RθJA Thermal Resistance, Junction−to−Ambient 130 °C/W RθJC Thermal Resistance, Junction−to−Case 41 °C/W Symbol PD March, 2021 − Rev. 2 A A916Y YWW 2 3 = Assembly Code = Device Code = Date Code ORDERING INFORMATION 1. PCB size: FR−4, 76 mm × 114 mm × 1.57 mm (3.0 inch × 4.5 inch × 0.062 inch) with minimum land pattern size. © Semiconductor Components Industries, LLC, 2002 1 1 Device KSA916YTA Package Shipping TO−92 3 LF (Pb−Free) 2000 / Fan−Fold Publication Order Number: KSA916/D KSA916 ELECTRICAL CHARACTERISTICS (Values are at TA = 25°C unless otherwise noted.) Symbol Parameter Conditions Min. Typ. Max. Unit BVCBO Collector−Base Breakdown Voltage IC = −1 mA, IE = 0 −120 − − V BVCEO Collector−Emitter Breakdown Voltage IC = −10 mA, IB = 0 −120 − − V BVEBO Emitter−Base Breakdown Voltage IE = −1 mA, IC = 0 −5 − − V ICBO Collector Cut−Off Current VCB = −120 V, IE = 0 − − −0.1 mA hFE1 DC Current Gain VCE = −5 V, IC = −10 mA 60 − − hFE2 DC Current Gain VCE = −5 V, IC = −100 mA 80 − 240 Collector−Emitter Saturation Voltage IC = −500 mA, IB = −50 mA − − −1 V Current Gain Bandwidth Product VCE = −5 V, IC = −100 mA − 120 − MHz Output Capacitance VCB = −10 V, IE = 0, f = 1 MHz − − 40 pF VCE(sat) fT Cob Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. hFE CLASSIFICATION Classification O Y hFE2 80 ~ 160 120 ~ 240 www.onsemi.com 2 KSA916 TYPICAL PERFORMANCE CHARACTERISTICS 1000 VCE = −5 V IB = −10 mA IB = −15 mA −800 IB = −7 mA −600 IB = −5 mA −400 IB = −4 mA IB = −3 mA IB = −2 mA −200 0 hFE, DC Current Gain IC, Collector Current (mA) −1000 100 IB = −1 mA IB = 0 0 −2 −4 −6 −8 10 −1 −10 −10 VCE, Collector−Emitter Voltage (V) Figure 2. DC Current Gain −1000 IC = 10 IB IC, Collector Current (mA) VCE(sat), Saturation Voltage (V) −10 −1 1s VCE(sat) −0.1 −0.01 −0.1 −1 −10 −100 −0.2 −0.4 −0.6 −0.8 VBE, Base−Emitter Voltage (V) Figure 3. Collector−Emitter Saturation Voltage Figure 4. Base−Emitter On Voltage PC, Power Dissipation (W) 1 ms 100 ms DC Operating TC = 25°C −10 −1.0 4.0 10 ms −1 −10 IC, Collector Current (mA) −1000 −100 −100 −1 0.0 −1000 Single Pulse IC, Collector Current (A) −1000 IC, Collector Current (mA) Figure 1. Static Characteristic −10 −100 3.5 3.0 2.5 2.0 1.5 TA 0.5 0.0 −100 TC 1.0 0 25 50 75 100 125 VCE, Collector−Emitter Voltage (V) TA, Ambient Temperature (5C) Figure 5. Safe Operating Area Figure 6. Power Derating www.onsemi.com 3 150 175 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS TO−92 3 8.0x4.9 (LEADFORMED) CASE 135AM ISSUE B DOCUMENT NUMBER: DESCRIPTION: 98AON14058G DATE 14 JAN 2021 Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. TO−92 3 8.0X4.9 (LEADFORMED) PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. 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