KSC2073TU

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This literature is subject to all applicable copyright laws and is not for resale in any manner. KSC2073 NPN Epitaxial Silicon Transistor Features • TV Vertical Deflection Output • Complement to KSA940 • Collector-Base Voltage : VCBO = 150V TO-220 1 1.Base Absolute Maximum Ratings Symbol 2.Collector 3.Emitter TA = 25°C unless otherwise noted Parameter Value Units VCBO Collector-Base Voltage 150 V VCEO Collector-Emitter Voltage 150 V VEBO Emitter-Base Voltage 5 V 1.5 A IC Collector Current PC Collector Dissipation (TC = 25°C) 25 W TJ Junction Temperature 150 °C TSTG Storage Temperature - 55 to 150 °C Electrical Characteristics Symbol TA = 25°C unless otherwise noted Parameter Test Condition Min. Typ. Max. Units BVCBO Collector-Base Breakdown Voltage IC = 500μA, IE = 0 150 V BVCEO Collector-Emitter Breakdown Voltage IC = 10mA, IB = 0 150 V BVEBO Emitter-Base Breakdown Voltage IE = 500μA, IC = 0 5 Collector Cut-off Current VCB = 120V, IE = 0 ICBO hFE VCE(sat) fT Cob DC Current Gain VCE = 10V, IC = 0.5A Collector-Emitter Saturation Voltage IC = 500mA, IB = 50mA Current Gain Bandwidth Product VCE = 10V, IC = 0.5A Output Capacitance VCB =10V, IE = 0, f = 1MHz V 10 40 75 μA 140 1 V 4 MHz 50 pF hFE Classification Classification H1 H2 hFE 40 ~ 80 60 ~ 125 © 2011 Fairchild Semiconductor Corporation KSC2073 Rev. A1 www.fairchildsemi.com 1 KSC2073 — NPN Epitaxial Silicon Transistor September 2011 1.0 1000 VCE=10V IB=8mA 0.8 hFE, DC CURRENT GAIN IC[A], COLLECTOR CURRENT 0.9 IB=7mA 0.7 IB=6mA 0.6 0.5 IB=5mA IB=4mA 0.4 IB=3mA 0.3 IB=2mA 0.2 0.1 100 IB=1mA 0.0 0 5 10 15 20 25 30 35 40 45 10 0.01 50 0.1 VCE[V], COLLECTOR-EMITTER VOLTAGE 10 IC[A], COLLECTOR CURRENT Figure 1. Static Characteristic Figure 2. DC current Gain 10 1000 IC=10IB f=1MHz IE=0 Cob[pF], CAPACITANCE VBE(sat),VCE(sat)[V], SATURATION VOLTAGE 1 1 VBE(sat) VCE(sat) 0.1 0.01 0.01 100 10 0.1 1 10 1 10 100 VCB[V], COLLECTOR-BASE VOLTAGE IC[A], COLLECTOR CURRENT Figure 3. Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage Figure 4. Collector-Emitter On Voltage 40 10 o DC 1 Thermal limitation 35 PC[W], POWER DISSIPATION IC[A], COLLECTOR CURRENT 1.TC=25 C 2.*Single pulse *1mS S/B limitation S/B limitation 30 25 20 15 10 5 0 0.1 10 0 100 VCE[V], COLLECTOR EMITTER VOLTAGE 50 75 100 125 150 o TC[ C], CASE TEMPERATURE Figure 5. Safe Operating Area Figure 6. Power Derating © 2011 Fairchild Semiconductor Corporation KSC2073 Rev. A1 25 www.fairchildsemi.com 2 KSC2073 — NPN Epitaxial Silicon Transistor Typical Performance Characteristics 3.89 3.60 10.360 10.109 A 0.36 M B B A 2.860 2.660 C 1.41 1.17 8.89 6.86 6.477 6.121 7° 3° 12.88 12.19 15.22 14.76 15.97 15.89 8.79 8.59 F 6.90 6.60 1 5° 3° 5° 3° 3 3 2.76 2.56 0.89 0.79 0.36 M 1.91 1 C B 0.61 0.33 1.65 1.25 2.64 2.44 5.18 4.98 NOTES: 5° 3° 5° 3° A. PACKAGE REFERENCE: JEDEC TO220 VARIATION AB B. ALL DIMENSIONS ARE IN MILLIMETERS. C. DIMENSION AND TOLERANCE AS PER ASME Y14.5-1994. D. DIMENSIONS ARE EXCLUSIVE OF BURRS, MOLD FLASH AND TIE BAR PROTRUSIONS. E. FAIRCHILD SEMICONDUCTOR. F 4.67 4.47 DOES NOT COMPLY JEDEC STD VALUE. G. DRAWING FILE NAME: TO220U03REV1 3.96 3.51 SUPPLIER "B" PACKAGE SHAPE 3.50 10.67 9.65 E SUPPLIER "A" PACKAGE SHAPE 3.40 2.50 16.30 13.90 IF PRESENT, SEE NOTE "D" 16.51 15.42 E 9.40 8.13 E 1 [2.46] 2 3 C 4.10 2.70 14.04 12.70 2.13 2.06 FRONT VIEWS 4.70 4.00 1.62 H 1.42 "A1" 8.65 7.59 SEE NOTE "F" 1.62 1.10 2.67 2.40 1.00 0.55 6.69 6.06 OPTIONAL CHAMFER E 14.30 11.50 NOTE "I" BOTTOM VIEW 3 0.60 0.36 SIDE VIEW 2.85 2.10 2 1 BACK VIEW NOTES: A) REFERENCE JEDEC, TO-220, VARIATION AB B) ALL DIMENSIONS ARE IN MILLIMETERS. C) DIMENSIONS COMMON TO ALL PACKAGE SUPPLIERS EXCEPT WHERE NOTED [ ]. D) LOCATION OF MOLDED FEATURE MAY VARY (LOWER LEFT CORNER, LOWER CENTER AND CENTER OF THE PACKAGE) E DOES NOT COMPLY JEDEC STANDARD VALUE. F) "A1" DIMENSIONS AS BELOW: SINGLE GAUGE = 0.51 - 0.61 DUAL GAUGE = 1.10 - 1.45 G) DRAWING FILE NAME: TO220B03REV9 H PRESENCE IS SUPPLIER DEPENDENT I) SUPPLIER DEPENDENT MOLD LOCKING HOLES IN HEATSINK. ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. 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