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KSC5502
NPN Planar Silicon Transistor
Equivalent Circuit
Features
•
•
•
•
C
High-Voltage Power Switch Mode Application
Small Variance in Storage Time
Wide Safe Operating Area
Suitable for Electronic Ballast Application
B
1
TO-220
E
1.Base
2.Collector
3.Emitter
Ordering Information
Part Number
Marking
Package
Packing Method
KSC5502TU
J5502
TO-220
Tube
Absolute Maximum Ratings
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The
absolute maximum ratings are stress ratings only. Values are at TA = 25°C unless otherwise noted.
Symbol
Parameter
Value
Unit
VCBO
Collector-Base Voltage
1200
V
VCEO
Collector-Emitter Voltage
600
V
VEBO
Emitter-Base Voltage
12
V
IC
Collector Current (DC)
2
A
(1)
ICP
Collector Current (Pulse)
4
A
IB
Base Current (DC)
1
A
(1)
IBP
Base Current (Pulse)
TJ
Junction Temperature
TSTG
Storage Junction Temperature Range
EAS
Avalanche Energy (TJ = 25°C)
2
A
150
°C
-65 to +150
°C
2.5
mJ
Notes:
1. Pulse test: pulse width = 5 ms, duty cycle ≤ 10%
© 2008 Fairchild Semiconductor Corporation
KSC5502 Rev. 1.1.0
www.fairchildsemi.com
1
KSC5502 — NPN Planar Silicon Transistor
January 2014
Values are at TA = 25°C unless otherwise noted.
Symbol
PC
Parameter
Max.
Unit
Collector Dissipation (TC = 25°C)
50
W
RθJC(2)
Thermal Resistance, Junction to Case
2.5
°C/W
RθJA(3)
Thermal Resistance, Junction to Ambient
85
°C/W
Notes:
2. RθJC test fixture under infinite cooling condition.
3. RθJA test board and fixture under natural convection, JESD51-10 recommended thermal test board.
Electrical Characteristics(4)
Values are at TC = 25°C unless otherwise noted.
Symbol
Parameter
Conditions
Min.
Typ.
Max.
Unit
BVCBO
Collector-Base Breakdown Voltage IC = 1 mA, IE = 0
1200
1350
V
BVCEO
Collector-Emitter Breakdown
Voltage
IC = 5 mA, IB = 0
600
750
V
BVEBO
Emitter-Base Breakdown Voltage
IE = 500 μA, IC=0
12.0
13.2
V
ICES
Collector Cut-Off Current
VCES = 1200 V, VBE = 0
ICEO
Collector Cut-Off Current
VCE = 600 V, IB = 0
IEBO
Emitter Cut-Off Current
VEB = 12 V, IC = 0
VCE = 1 V, IC = 0.2 A
hFE
DC Current Gain
VCE = 1 V, IC = 1 A
VCE = 2.5 V,
IC = 0.5 A
IC = 0.2 A, IB = 0.02 A
VCE(sat)
Collector-Emitter Saturation
Voltage
IC = 0.4 A, IB = 0.08 A
IC = 1 A, IB = 0.2 A
IC = 0.4 A, IB = 0.08 A
VBE(sat)
Base-Emitter Saturation Voltage
IC = 1 A, IB = 0.2 A
Cib
Input Capacitance
Cob
Output Capacitance
TC = 25°C
100
TC = 125°C
500
TC = 25°C
100
TC = 125°C
500
TC = 25°C
10
TC = 25°C
15
28
TC = 125°C
8
27
TC = 25°C
4.0
8.7
TC = 125°C
3.0
6.6
TC = 25°C
12
20
TC = 125°C
6
16
μA
μA
μA
40
30
TC = 25°C
0.09
0.80
TC = 125°C
0.13
1.10
TC = 25°C
0.08
0.60
TC = 125°C
0.12
1.00
TC = 25°C
0.19
1.50
V
TC = 125°C
0.35
3.00
TC = 25°C
0.77
1.00
TC = 125°C
0.65
0.90
TC = 25°C
0.83
1.20
TC = 125°C
0.70
1.00
410
500
pF
20
100
pF
VEB = 8 V, IC = 0, f = 1 MHz
VCB = 10 V, IE = 0, f = 1 MHz
V
Note:
4. Pulse test : pulse width = 5 ms, duty cycle ≤ 10%
© 2008 Fairchild Semiconductor Corporation
KSC5502 Rev. 1.1.0
www.fairchildsemi.com
2
KSC5502 — NPN Planar Silicon Transistor
Thermal Characteristics
Values are at TC = 25°C unless otherwise noted.
Symbol
Parameter
VCE(DSAT) Dynamic Saturation Voltage
Conditions
Min
Typ.
IC = 0.4 A, IB1 = 80 mA, at 1μs
VCC = 300 V
at 3μs
11
IC = 1 A, IB1 = 200 mA, at 1μs
VCC = 300 V
at 3μs
23
Max.
8
Unit
V
13
Resistive Load Switching (D.C < 10%, Pulse Width = 20 s)
tON
Turn-On Time
tOFF
Turn-Off Time
tON
Turn-On Time
tOFF
Turn-Off Time
IC = 0.4 A,
IB1 = 80 mA,
IB2 = 0.2 A,
VCC = 300 V,
RL = 750 Ω
TC = 25°C
250
TC = 125°C
260
TC = 25°C
3.3
TC = 125°C
3.8
IC = 1 A,
IB1 = 160 mA,
IB2 = 160 mA,
VCC = 300 V,
RL = 300 Ω
TC = 25°C
220
TC = 125°C
250
TC = 25°C
4.3
TC = 125°C
5.0
TC = 25°C
1.4
IC = 0.4 A,
IB1 = 80 mA,
IB2 = 0.2 A,
VZ = 300 V,
LC = 200 μH
TC = 125°C
1.7
TC = 25°C
130
TC = 125°C
80
TC = 25°C
210
TC = 125°C
130
TC = 25°C
4.9
TC = 125°C
5.3
TC = 25°C
170
TC = 125°C
340
TC = 25°C
300
TC = 125°C
810
350
4.0
450
5.0
ns
μs
ns
μs
Inductive Load Switching (VCC = 15 V)
tSTG
Storage Time
tF
Fall Time
tC
Cross-Over Time
tSTG
Storage Time
tF
Fall Time
tC
Cross-Over Time
IC = 0.8 A,
IB1 = 160 mA,
IB2 = 160 mA,
VCC = 300 V,
LC = 200 μH
© 2008 Fairchild Semiconductor Corporation
KSC5502 Rev. 1.1.0
2.0
200
350
5.5
250
600
μs
ns
ns
μs
ns
ns
www.fairchildsemi.com
3
KSC5502 — NPN Planar Silicon Transistor
Electrical Characteristics (Continued)
100
o
400mA
2
300mA
200mA
IB=100mA
1
TJ=125 C
hFE, DC CURRENT GAIN
IC[A], COLLECTOR CURRENT
VCE=1V
1A
900mA
800mA
700mA
600mA
500mA
3
o
TJ=25 C
10
1
0
0
1
2
3
4
5
6
1
7
Figure 1. Static Characteristic
1000
IC=10IB
10
VCE(sat)(V), VOLTAGE
VCE(sat)(V), VOLTAGE
100
Figure 2. DC current Gain
IC=5IB
10
10
IC[mA], COLLECTOR CURRENT)
VCE[V], COLLECTOR EMITTER VOLTAGE
1
o
TJ=125 C
1
o
TJ=125 C
0.1
0.1
o
TJ=25 C
o
TJ=25 C
0.01
0.01
1
10
100
1
1000
10
100
1000
IC(mA), COLLECTOR CURRENT
IC(mA), COLLECTOR CURRENT
Figure 3. Collector-Emitter Saturation Voltage
Figure 4. Collector-Emitter Saturation Voltage
2
o
TJ=25 C
IC=5IB
1.5A
VBE[V], VOLTAGE
VCE[V], VOLTAGE
2.0A
1.0A
1
0.4A
IC=0.2A
0
1
10
100
o
TJ=25 C
o
TJ=125 C
0.1
1k
1
IB[mA], BASE CURRENT
10
100
1k
IC[mA], COLLECTOR CURRENT
Figure 5. Typical Collector Saturation Voltage
Figure 6. Base-Emitter Saturation Voltage
© 2008 Fairchild Semiconductor Corporation
KSC5502 Rev. 1.1.0
1
www.fairchildsemi.com
4
KSC5502 — NPN Planar Silicon Transistor
Typical Performance Characteristics
1000
900
800
IC=10IB
700
600
IC=5IB1=2IB2
VCC=300V
PW=20us
tON[ns],TIME
VBE[V], VOLTAGE
500
1
o
TJ=25 C
o
TJ=125 C
400
300
o
TJ=125 C
200
o
TJ=25 C
0.1
1
10
100
100
0.3
1k
0.4
IC[mA], COLLECTOR CURRENT
Figure 7. Base-Emitter Saturation Voltage
0.6 0.7 0.8 0.9 1
2
3
Figure 8. Resistive Switching Time, ton
1000
900
5
4.5
800
4
700
IC=5IB1=2IB2
VCC=300V
PW=20us
3.5
600
IC=5IB1=5IB2
VCC=300V
PW=20us
500
2.5
tON[ns],TIME
3
tOFF(us),TIME
0.5
IC[A], COLLECTOR CURRENT
o
TJ=125 C
2
400
300
o
TJ=125 C
o
TJ=25 C
200
1.5
o
TJ=25 C
1
0.3
0.4
0.5
0.6 0.7 0.8 0.9 1
2
100
0.3
3
0.4
0.5
0.6 0.7 0.8 0.9 1
2
3
IC[A], COLLECTOR CURRENT
IC[A], COLLECTOR CURRENT
Figure 9. Resistive Switching Time, toff
Figure 10. Resistive Switching Time, ton
6
9
5
8
IC=5IB1=5IB2
VCC=300V
PW=20us
7
4
IC=5IB1=2IB2
VCC=15V
VZ=300V
LC=200uH
o
TJ=125 C
5
tSTG(us),TIME
tOFF(us),TIME
6
o
TJ=125 C
4
o
TJ=25 C
3
2
o
TJ=25 C
3
2
0.3
0.4
0.5
0.6 0.7 0.8 0.9 1
2
1
0.3
3
IC[A], COLLECTOR CURRENT
0.5
0.6 0.7 0.8 0.9 1
2
3
IC[A], COLLECTOR CURRENT
Figure 11. Resistive Switching Time, toff
Figure 12. Inductive Switching Time, tSTG
© 2008 Fairchild Semiconductor Corporation
KSC5502 Rev. 1.1.0
0.4
www.fairchildsemi.com
5
KSC5502 — NPN Planar Silicon Transistor
Typical Performance Characteristics (Continued)
400
tF(ns),TIME
200
600
IC=5IB1=2IB2
VCC=15V
VZ=300V
LC=200uH
500
o
TJ=25 C
100
90
80
70
400
o
TJ=125 C
60
IC=5IB1=2IB2
VCC=15V
VZ=300V
LC=200uH
o
TJ=25 C
300
tC[ns],TIME
300
200
o
TJ=125 C
50
40
30
20
0.3
0.4
0.5
0.6 0.7 0.8 0.9 1
2
100
0.3
3
0.4
IC[A], COLLECTOR CURRENT
Figure 13. Inductive Switching Time, tF
7
6
2
3
2000
IC=5IB1=5IB2
VCC=15V
VZ=300V
LC=200uH
o
TJ=125 C
1000
900
800
700
600
5
IC=5IB1=5IB2
VCC=15V
VZ=300V
LC=200uH
o
TJ=125 C
500
4
tF(ns),TIME
tSTG(us),TIME
0.6 0.7 0.8 0.9 1
Figure 14. Inductive Switching Time, tc
10
9
8
0.5
IC[A], COLLECTOR CURRENT
o
TJ=25 C
3
400
300
200
o
TJ=25 C
2
100
90
80
70
60
1
0.3
0.4
0.5
0.6 0.7 0.8 0.9 1
2
50
0.3
3
Figure 15. Inductive Switching Time, tSTG
0.6 0.7 0.8 0.9 1
2
3
5
o
IC=5IB1=5IB2
VCC=15V
VZ=300V
LC=200uH
o
TJ=125 C
4
1000
900
800
700
600
500
tSTG, TIME[us]
tC[ns],TIME
2000
0.5
Figure 16. Inductive Switching Time, tF
4000
3000
0.4
IC[A], COLLECTOR CURRENT
IC[A], COLLECTOR CURRENT
o
TJ=25 C
400
TJ=25 C
IC=5IB1=2IB2
VCC=15V
VZ=300V
LC=200uH
o
TJ=125 C
IC=0.8A
3
2
300
1
200
100
0.3
0
0.4
0.5
0.6 0.7 0.8 0.9 1
2
10
3
11
12
hFE, FORCED GAIN @ VCE=1V & IC=0.8A
IC[A], COLLECTOR CURRENT
Figure 17. Inductive Switching Time, tc
Figure 18. Inductive Switching Time, tSTG
© 2008 Fairchild Semiconductor Corporation
KSC5502 Rev. 1.1.0
IC=0.4A
www.fairchildsemi.com
6
KSC5502 — NPN Planar Silicon Transistor
Typical Performance Characteristics (Continued)
500
300
o
o
250
TJ=25 C
IC=5IB1=2IB2
VCC=15V
VZ=300V
LC=200uH
TJ=25 C
IC=5IB1=2IB2
VCC=15V
VZ=300V
LC=200uH
o
TJ=125 C
400
o
TJ=125 C
200
tC, TIME[ns]
tF, TIME[ns]
IC=0.8A
150
IC=0.4A
100
300
IC=0.8A
200
IC=0.4A
100
50
0
0
10
11
10
12
11
12
hFE, FORCED GAIN @ VCE=1V & IC=0.8A
hFE, FORCED GAIN @ VCE=1V & IC=0.8A
Figure 20. Inductive Switching Time, tc
Figure 19. Inductive Switching Time, tF
60
1000
F=1MHz
50
PC[W], POWER DISSIPATION
CAPACITANCE[pF]
Cib
100
Cob
10
40
30
20
10
0
0
1
1
10
100
100
150
200
o
REVERSE VOLTAGE[V]
Figure 21. Capacitance
Figure 22. Power Derating
© 2008 Fairchild Semiconductor Corporation
KSC5502 Rev. 1.1.0
50
TC( C), CASE TEMPERATURE
www.fairchildsemi.com
7
KSC5502 — NPN Planar Silicon Transistor
Typical Performance Characteristics (Continued)
KSC5502 — NPN Planar Silicon Transistor
Physical Dimensions
TO-220
Figure 23. TO-220, MOLDED, 3-LEAD, JEDEC VARIATION AB (ACTIVE)
Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner
without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or
obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions, specifically the
warranty therein, which covers Fairchild products.
Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings:
http://www.fairchildsemi.com/dwg/TO/TO220B03.pdf.
For current tape and reel specifications, visit Fairchild Semiconductor’s online packaging area:
http://www.fairchildsemi.com/packing_dwg/PKG-TO220B03.pdf.
© 2008 Fairchild Semiconductor Corporation
KSC5502 Rev. 1.1.0
www.fairchildsemi.com
8
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