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Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s
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KSC388
NPN Epitaxial Silicon Transistor
Features
• TV Final Picture IF Amplifier Applications
• GPE = 33 dB (Typical) at f = 45 MHz
• Suffix “-C” means Center Collector (1. Emitter 2. Collector 3. Base)
TO-92
• Non Suffix “-C” means Side Collector (1. Emitter 2. Base 3. Collector)
12
3
Straight Lead
Bulk Packing
1
2
1. Emitter
2. Base
3. Collector
3
Bent Lead
Tape & Reel
Ammo Packing
Ordering Information
Part Number
Top Mark
Package
Packing Method
KSC388CYTA
C388
TO-92 3L
Ammo
Absolute Maximum Ratings
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The
absolute maximum ratings are stress ratings only. Values are at TA = 25°C unless otherwise noted.
Symbol
Parameter
Value
Unit
VCBO
Collector-Base Voltage
30
V
VCEO
Collector-Emitter Voltage
25
V
VEBO
Emitter-Base Voltage
4
V
IC
Collector Current
50
mA
TJ
Junction Temperature
150
°C
TSTG
Storage Temperature
-55 to 150
°C
© 2002 Fairchild Semiconductor Corporation
KSC388 Rev. 1.4
www.fairchildsemi.com
KSC388 — NPN Epitaxial Silicon Transistor
October 2015
Values are at TA = 25°C unless otherwise noted.
Symbol
PD
RθJA
Parameter
Value
Unit
Power Dissipation
300
mW
Derate Above 25°C
2.4
mW/°C
Thermal Resistance, Junction-to-Ambient
416
°C/W
Note:
1. PCB size: FR-4, 76 mm x 114 mm x 1.57 mm (3.0 inch x 4.5 inch x 0.062 inch) with minimum land pattern size.
Electrical Characteristics
Values are at TA = 25°C unless otherwise noted.
Symbol
Parameter
Conditions
Min.
Typ.
Max.
Unit
BVCBO
Collector-Base Breakdown Voltage
IC = 10 μA, IE = 0
30
V
BVCEO
Collector-Emitter Breakdown Voltage IC = 5 mA, IB = 0
25
V
ICBO
Collector Cut-Off Current
VCB = 30 V, IE = 0
0.1
μA
IEBO
Emitter Cut-Off Current
VEB = 3 V, IC = 0
0.1
μA
hFE
DC Current Gain
VCE = 12.5 V, IC = 12.5 mA
VCE(sat)
Collector-Emitter Saturation Voltage
IC = 15 mA, IB = 1.5 mA
0.2
V
VBE(sat)
Base-Emitter Saturation Voltage
IC = 15 mA, IB = 1.5 mA
1.5
V
Output Capacitance
VCB = 10 V, IE = 0,
f = 1 MHz
2
pF
Collector-Base Time Constant
VCB = 10 V, IC = 1 mA,
f = 30 MHz
25
ps
Current Gain Bandwidth Product
VCE = 12.5 V, IC = 12.5 mA
300
Power Gain
VCE = 12.5 V, IC = 12.5 mA,
f = 45 MHz
28
Cob
Cc·rbb´
fT
GPE
© 2002 Fairchild Semiconductor Corporation
KSC388 Rev. 1.4
20
200
0.8
MHz
33
36
dB
www.fairchildsemi.com
2
KSC388 — NPN Epitaxial Silicon Transistor
Thermal Characteristics(1)
1000
16
IB = 70μA
12
IB = 60μA
10
IB = 50μA
8
IB = 40μA
6
IB = 30μA
4
IB = 20μA
2
IB = 10μA
hFE, DC CURRENT GAIN
IC[mA], COLLECTOR CURRENT
VCE=12.5V
14
10
0.1
0
0
4
8
12
16
20
100
24
1
100
IC[mA], COLLECTOR CURRENT
VCE[V], COLLECTOR-EMITTER VOLTAGE
Figure 1. Static Characteristic
Figure 2. DC Current Gain
1000
10
IC=10IB
VCE=6V
IC[mA], COLLECTOR CURRENT
VBE(sat), VCE(sat)[V], SATURATION VOLTAGE
10
1
0.1
0.01
0.1
1
100
10
1
0.1
0.0
10
10
Cib[pF],Cob[pF], CAPACITANCE
f = 1MHz
IE=0
Cib
Cob
1
10
100
VCB[V], COLLECTOR-BASE VOLTAGE
0.8
1.0
1.2
1000
VCE=12.5V
100
10
0.1
1
10
100
IC[mA], COLLECTOR CURRENT
Figure 5. Collector Input Capacitance
Collector Output Capacitance
© 2002 Fairchild Semiconductor Corporation
KSC388 Rev. 1.4
0.6
Figure 4. Base-Emitter On Voltage
fT[MHz], CURRENT GAIN BANDWIDTH PRODUCT
Figure 3. Base-Emitter Saturation Voltage and
Collector-Emitter Saturation Voltage
1
0.4
VBE[V], BASE-EMITTER VOLTAGE
IC[mA], COLLECTOR CURRENT
0.1
0.1
0.2
Figure 6. Current Gain Bandwidth Product
www.fairchildsemi.com
3
KSC388 — NPN Epitaxial Silicon Transistor
Typical Performance Characteristics
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
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