KSD1222TU

KSD1222 KSD1222 Power Amplifier Applications • • • • • High DC Current Gain Low Collector-Emitter Saturation Voltage Built in a Damper Diode at E-C Darlington TR Complement to KSB907 1 I-PAK 1. Base 2. Collector 3. Emitter NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO Parameter Collector-Base Voltage Value 60 Units V VCEO Collector-Emitter Voltage 40 V VEBO Emitter-Base Voltage 5 V IC Collector Current 3 A IB Base Current 0.3 A Collector Dissipation (TC=25°C) 15 W Collector Dissipation (Ta=25°C) 1 W PC TJ Junction Temperature 150 °C TSTG Storage Temperature - 55 ~ 150 °C Electrical Characteristics TC=25°C unless otherwise noted Symbol BVCEO Parameter Collector-Emitter Breakdown Voltage Test Condition IC = 25mA, IB = 0 Min. 40 Typ. Max. ICBO Collector Cut-off Current VCB = 60V, IE = 0 20 µA IEBO Emitter Cut-off Current VEB = 5V, IC = 0 2.5 mA hFE1 hFE2 DC Current Gain VCE = 2V, IC = 1A VCE = 2V, IC = 3A V 2000 1000 VCE(sat) Collector-Emitter Saturation Voltage IC = 2A, IB = 4mA 1.5 VBE(sat) Base-Emitter Saturation Voltage IC = 2A, IB = 4mA 2 tON Turn On Time VCC = 30V, IC = 3A IB1 = -IB2 = 6mA RL = 10Ω tSTG Storage Time tF Fall Time ©2001 Fairchild Semiconductor Corporation Units V V 0.1 µs 1 µs 0.2 µs Rev. A1, January 2001 KSD1222 Typical Characteristics 5 10000 4 IB =300 3 hFE, DC CURRENT GAIN IC[A], COLLECTOR CURRENT VCE = 2V µA 275µ A 250µ A 225 µ A 2 200µ A 1 IB = 175µ A 1000 IB = 0 0 0 1 2 3 4 100 0.1 5 1 VCE[V], COLLECTOR-EMITTER VOLTAGE IC[A], COLLECTOR CURRENT Figure 1. Static Characteristic Figure 2. DC current Gain 4 V CE=2V IC = 500IB IC[A], COLLECTOR CURRENT VBE(sat), VCE(sat)[V], SATURATION VOLTAGE 10 VBE(sat) VCE(sat) 1 0.1 0.1 1 3 2 1 0 0.0 10 0.8 Figure 3. Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage 3.2 20 IC MAX. (PULSE) 1ms PC[W], POWER DISSIPATION 10ms IC MAX. (DC) DC 1 VCEO MAX. 0.1 0.01 10 VCE [V], COLLECTOR-EMITTER VOLTAGE Figure 5. Safe Operating Area ©2001 Fairchild Semiconductor Corporation 2.4 Figure 4. Base-Emitter On Voltage 10 1 1.6 VBE[V], BASE EMITTER VOLTAGE IC[A], COLLECTOR CURRENT IC[A], COLLECTOR CURRENT 10 100 15 10 5 0 0 25 50 75 100 125 150 175 o TC[ C], CASE TEMPERATURE Figure 6. Power Derating Rev. A1, January 2001 KSD1222 Package Demensions I-PAK 2.30 ±0.20 6.60 ±0.20 5.34 ±0.20 2.30TYP [2.30±0.20] ±0.20 ±0.30 16.10 ±0.20 ±0.30 9.30 0.76 ±0.10 1.80 0.80 MAX0.96 0.50 ±0.10 6.10 ±0.20 (0.50) 0.70 (4.34) ±0.10 0.60 ±0.20 (0.50) 2.30TYP [2.30±0.20] 0.50 ±0.10 Dimensions in Millimeters ©2001 Fairchild Semiconductor Corporation Rev. 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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. ©2001 Fairchild Semiconductor Corporation Rev. H2