KSH42CTF

KSH42C KSH42C General Purpose Amplifier Low Speed Switching Applications • Lead Formed for Surface Mount Application (No Suffix) • Straight Lead (I-PAK, “- I” Suffix) • Electrically Similar to Popular TIP42C D-PAK 1 1.Base I-PAK 1 2.Collector 3.Emitter PNP Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO Parameter Value -100 Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage IC Collector Current (DC) ICP Collector Current (Pulse) Units V -100 V -5 V -6 A -10 A IB Base Current -2 A PC Collector Dissipation (TC=25°C) 20 W Collector Dissipation (Ta=25°C) 1.75 W TJ Junction Temperature 150 °C TSTG Storage Temperature - 65 ~ 150 °C Electrical Characteristics TC=25°C unless otherwise noted Symbol VCEO(sus) Parameter * Collector-Emitter Sustaining Voltage Test Condition IC = - 30mA, IB = 0 ICEO Collector Cut-off Current ICES Collector Cut-off Current IEBO Min. -100 Max. Units V VCE = -60V, IB = 0 -50 µA VCE = -100V, VBE = 0 -10 µA Emitter Cut-off Current VBE = -5V, IC = 0 -0.5 mA hFE * DC Current Gain VCE = -4V, IC = -0.3A VCE = -4V, IC = -3A VCE(sat) * Collector-Emitter Saturation Voltage IC = -6A, IB = -600mA VBE(on) * Base-Emitter On Voltage VCE = -6A, IC = -4A fT Current Gain Bandwidth Product VCE = -10V, IC = -500mA 30 15 3 75 -1.5 V -2 V MHz * Pulse Test: PW≤300µs, Duty Cycle≤2% ©2002 Semiconductor Components Industries, LLC. October-2017,Rev. 1 Publication Order Number: KSH42C/D KSH42C VBE(sat), VCE(sat)[V], SATURATION VOLTAGE Typical Characteristics 1000 hFE, DC CURRENT GAIN VCE = -2V 100 10 1 -0.01 -0.1 -1 -10 -10 IC = 10 IB -1 V BE(sat) -0.1 VCE(sat) -0.01 -0.01 -0.1 -1 -10 IC[A], COLLECTOR CURRENT IC[A], COLLECTOR CURRENT Figure 1. DC current Gain Figure 2. Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage 10 tR, tD [µs], TURN ON TIME Cob[pF], CAPACITANCE 1000 100 10 V CC = -30V IC = 10.IB 1 tR 0.1 tD VBE(off)=-5V 1 -0.1 0.01 -0.01 -1 -10 -0.1 -10 IC[A], COLLECTOR CURRENT VCB[V], COLLECTOR-BASE VOLTAGE Figure 3. Collector Capacitance Figure 4. Turn On Time 10 -100 V CC = -30V IC = 10.IB tSTG 1 tF 0.1 0.01 -0.01 IC[A], COLLECTOR CURRENT tSTG,tF [µ s], TURN OFF TIME -1 -100 -0.1 -1 -10 ICP(max) -10 10 1m IC(max) 5m -1 50 s 0µ 0µ s s s DC -0.1 -0.01 -1 IC[A], COLLECTOR CURRENT -10 -100 VCE[V], COLLECTOR-EMITTER VOLTAGE Figure 5. Turn Off Time Figure 6. Safe Operating Area www.onsemi.com 2 -1000 KSH42C Typical Characteristics (Continued) PC[W], POWER DISSIPATION 25 20 15 10 5 0 0 25 50 75 100 125 150 175 o TC[ C], CASE TEMPERATURE Figure 7. Power Derating www.onsemi.com 3 KSH42C Package Dimensions D-PAK MIN0.55 0.91 ±0.10 0.50 ±0.10 0.89 ±0.10 0.50 ±0.10 1.02 ±0.20 2.30TYP [2.30±0.20] (1.00) (3.05) (2XR0.25) (0.10) 6.60 ±0.20 (5.34) (5.04) (1.50) (0.70) 2.30 ±0.20 (0.90) 6.10 ±0.20 2.70 ±0.20 2.30 ±0.10 0.76 ±0.10 6.10 ±0.20 2.30TYP [2.30±0.20] (0.50) 2.70 ±0.20 MAX0.96 (4.34) 9.50 ±0.30 0.80 ±0.20 0.60 ±0.20 (0.50) 9.50 ±0.30 5.34 ±0.30 0.70 ±0.20 6.60 ±0.20 0.76 ±0.10 Dimensions in Millimeters www.onsemi.com 4 KSH42C Package Dimensions (Continued) I-PAK 2.30 ±0.20 6.60 ±0.20 5.34 ±0.20 2.30TYP [2.30±0.20] ±0.20 ±0.30 16.10 ±0.20 ±0.30 9.30 0.76 ±0.10 1.80 0.80 MAX0.96 0.50 ±0.10 6.10 ±0.20 (0.50) 0.70 (4.34) ±0.10 0.60 ±0.20 (0.50) 2.30TYP [2.30±0.20] 0.50 ±0.10 Dimensions in Millimeters www.onsemi.com 5 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. 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