MAC16CNG

MAC16CMG, MAC16CNG Triacs Silicon Bidirectional Thyristors Designed primarily for full wave ac control applications, such as motor controls, heating controls or dimmers; or wherever full−wave, silicon gate−controlled devices are needed. www.onsemi.com Features • • • • • • • • • TRIACS 16 AMPERES RMS 400 thru 800 VOLTS High Commutating di/dt and High Immunity to dV/dt @ 125°C Minimizes Snubber Networks for Protection Blocking Voltage to 800 Volts On−State Current Rating of 16 Amperes RMS High Surge Current Capability − 150 Amperes Industry Standard TO−220 Package for Ease of Design Glass Passivated Junctions for Reliability and Uniformity Operational in Three Quadrants, Q1, Q2, and Q3 These Devices are Pb−Free and are RoHS Compliant* MT2 MT1 G MARKING DIAGRAM MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Rating Symbol Peak Repetitive Off-State Voltage (Note 1) (TJ = − 40 to 125°C) MAC16CM MAC16CN VDRM, VRRM 600 800 On-State RMS Current (Full Cycle Sine Wave 50 to 60 Hz; TC = 80°C) IT(RMS) 16 A Peak Non-Repetitive Surge Current (One Full Cycle, 60 Hz, TJ = 125°C) ITSM 150 A I2t 93 A2sec PGM 20 W PG(AV) 0.5 W 1 Main Terminal 1 Operating Junction Temperature Range TJ −40 to +125 °C 2 Main Terminal 2 Storage Temperature Range Tstg −40 to +150 °C 3 Gate 4 Main Terminal 2 Circuit Fusing Consideration (t = 8.33 ms) Peak Gate Power (Pulse Width ≤ 1.0 ms, TC = 80°C) Average Gate Power (t = 8.3 ms, TC = 80°C) Value Unit MAC16CxG AYWW V Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. VDRM and VRRM for all types can be applied on a continuous basis. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded. 1 2 TO−220 CASE 221A STYLE 4 3 x A Y WW G = M or N = Assembly Location = Year = Work Week = Pb−Free Package PIN ASSIGNMENT ORDERING INFORMATION Device Package Shipping MAC16CMG TO−220 (Pb−Free) 50 Units / Rail MAC16CNG TO−220 (Pb−Free) 50 Units / Rail *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. © Semiconductor Components Industries, LLC, 2015 January, 2015 − Rev. 4 1 Publication Order Number: MAC16C/D MAC16CMG, MAC16CNG THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction−to−Case Junction−to−Ambient Maximum Lead Temperature for Soldering Purposes 1/8″ from Case for 10 Seconds Symbol Value Unit RqJC RqJA 2.2 62.5 °C/W TL 260 °C ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted; Electricals apply in both directions) Symbol Characteristic Min Typ Max − − − − 0.01 2.0 − 1.2 1.6 Unit OFF CHARACTERISTICS Peak Repetitive Blocking Current (VD = Rated VDRM, VRRM Gate Open) TJ = 25°C TJ = 125°C IDRM, IRRM mA ON CHARACTERISTICS Peak On-State Voltage (Note 2) (ITM = $21 A Peak) VTM Gate Trigger Current (Continuous DC) (VD = 12 V, RL = 100 W) MT2(+), G(+) MT2(+), G(−) MT2(−), G(−) IGT Holding Current (VD = 12 V, Gate Open, Initiating Current = $150 mA) IH Latching Current (VD = 12 V, IG = 35 mA) MT2(+), G(+) MT2(+), G(−) MT2(−), G(−) IL Gate Trigger Voltage (Continuous DC) (VD = 12 V, RL = 100 W) MT2(+), G(+) MT2(+), G(−) MT2(−), G(−) V mA 8.0 8.0 8.0 12 16 20 35 35 35 − 20 50 − − − 25 40 24 50 80 50 mA mA VGT V 0.5 0.5 0.5 0.75 0.72 0.82 1.5 1.5 1.5 (di/dt)c 15 − − A/ms Critical Rate of Rise of Off-State Voltage (VD = Rated VDRM, Exponential Waveform, Gate Open, TJ = 125°C) dV/dt 600 − − V/ms Repetitive Critical Rate of Rise of On-State Current IPK = 50 A; PW = 40 msec; diG/dt = 200 mA/msec; f = 60 Hz di/dt − − 10 A/ms DYNAMIC CHARACTERISTICS Rate of Change of Commutating Current (VD = 400 V, ITM = 6.0 A, Commutating dV/dt = 24 V/ms, Gate Open, TJ = 125°C, f = 250 Hz, CL = 10 mF, LL = 40 mH, with Snubber) Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 2. Pulse Test: Pulse Width ≤ 2.0 ms, Duty Cycle ≤ 2%. www.onsemi.com 2 MAC16CMG, MAC16CNG Voltage Current Characteristic of Triacs (Bidirectional Device) + Current Symbol Parameter VTM VDRM Peak Repetitive Forward Off State Voltage IDRM Peak Forward Blocking Current VRRM Peak Repetitive Reverse Off State Voltage IRRM Peak Reverse Blocking Current VTM Maximum On State Voltage IH Holding Current on state IH IRRM at VRRM off state IH Quadrant 3 MainTerminal 2 − VTM Quadrant Definitions for a Triac MT2 POSITIVE (Positive Half Cycle) + (+) MT2 Quadrant II (+) MT2 Quadrant I (+) IGT GATE (−) IGT GATE MT1 MT1 REF REF IGT − + IGT (−) MT2 (−) MT2 Quadrant III Quadrant 1 MainTerminal 2 + Quadrant IV (+) IGT GATE (−) IGT GATE MT1 MT1 REF REF − MT2 NEGATIVE (Negative Half Cycle) All polarities are referenced to MT1. With in−phase signals (using standard AC lines) quadrants I and III are used. www.onsemi.com 3 + Voltage IDRM at VDRM MAC16CMG, MAC16CNG 1.10 VGT, GATE TRIGGER VOLTAGE (VOLT) IGT, GATE TRIGGER CURRENT (mA) 100 Q3 Q2 Q1 10 1 -40 -25 -10 5 20 35 50 65 80 95 TJ, JUNCTION TEMPERATURE (°C) 110 Q3 1.00 0.90 Q1 0.80 0.70 Q2 0.60 0.50 0.40 -40 -25 -10 125 5 20 35 50 65 80 TJ, JUNCTION TEMPERATURE (°C) 100 LATCHING CURRENT (mA) HOLDING CURRENT (mA) 125 100 Q2 MT2 NEGATIVE 10 MT2 POSITIVE 1 -40 -25 -10 5 20 35 50 65 80 95 TJ, JUNCTION TEMPERATURE (°C) 110 1 -40 -25 -10 125 Q1 Q3 10 5 20 35 50 65 80 TJ, JUNCTION TEMPERATURE (°C) 95 110 125 24 22 PAV, AVERAGE POWER (WATTS) 120 30° 60° 90° 115 110 105 100 120° 95 180° 90 DC 85 80 75 0 2 4 6 8 10 12 IT(RMS), RMS ON‐STATE CURRENT (AMP) 125 Figure 4. Typical Latching Current versus Junction Temperature Figure 3. Typical Holding Current versus Junction Temperature TC, CASE TEMPERATURE (°C) 110 Figure 2. Typical Gate Trigger Voltage versus Junction Temperature Figure 1. Typical Gate Trigger Current versus Junction Temperature 70 95 14 20 18 120° 16 14 12 10 8 90° 6 60° 4 2 0 16 DC 180° 30° 0 Figure 5. Typical RMS Current Derating 2 4 6 8 10 12 14 IT(AV), AVERAGE ON‐STATE CURRENT (AMP) Figure 6. On-State Power Dissipation www.onsemi.com 4 16 MAC16CMG, MAC16CNG 1.0 TYPICAL AT TJ = 25°C r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED) I T, INSTANTANEOUS ON‐STATE CURRENT (AMP) 100 MAXIMUM @ TJ = 125°C 10 MAXIMUM @ TJ = 25°C 1 0.1 0.01 0.1 1 10 100 t, TIME (ms) 1000 Figure 8. Typical Thermal Response 0.1 0 0.5 1 1.5 2 2.5 3 3.5 VT, INSTANTANEOUS ON‐STATE VOLTAGE (VOLTS) 4 Figure 7. On-State Characteristics www.onsemi.com 5 10000 MAC16CMG, MAC16CNG PACKAGE DIMENSIONS TO−220 CASE 221A−09 ISSUE AH −T− B SEATING PLANE C F T S 4 DIM A B C D F G H J K L N Q R S T U V Z A Q 1 2 3 U H K Z L R V NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED. J G D INCHES MIN MAX 0.570 0.620 0.380 0.415 0.160 0.190 0.025 0.038 0.142 0.161 0.095 0.105 0.110 0.161 0.014 0.024 0.500 0.562 0.045 0.060 0.190 0.210 0.100 0.120 0.080 0.110 0.045 0.055 0.235 0.255 0.000 0.050 0.045 ----0.080 MILLIMETERS MIN MAX 14.48 15.75 9.66 10.53 4.07 4.83 0.64 0.96 3.61 4.09 2.42 2.66 2.80 4.10 0.36 0.61 12.70 14.27 1.15 1.52 4.83 5.33 2.54 3.04 2.04 2.79 1.15 1.39 5.97 6.47 0.00 1.27 1.15 ----2.04 N STYLE 4: PIN 1. 2. 3. 4. MAIN TERMINAL 1 MAIN TERMINAL 2 GATE MAIN TERMINAL 2 ON Semiconductor and the are registered trademarks of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other countries. SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. 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