MAC16M

MAC16D, MAC16M, MAC16N Preferred Device Triacs Silicon Bidirectional Thyristors Designed for high performance full-wave ac control applications where high noise immunity and high commutating di/dt are required. http://onsemi.com Features • • • • • • • • TRIACS 16 AMPERES RMS 400 thru 800 VOLTS Blocking Voltage to 800 Volts On-State Current Rating of 16 Amperes RMS at 80°C Uniform Gate Trigger Currents in Three Quadrants High Immunity to dv/dt − 500 V/ms minimum at 125°C Minimizes Snubber Networks for Protection Industry Standard TO-220AB Package High Commutating di/dt − 9.0 A/ms minimum at 125°C Pb−Free Packages are Available* MT2 MT1 G MARKING DIAGRAM MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Rating Symbol Peak Repetitive Off−State Voltage (Note 1) (TJ = −40 to 125°C, Sine Wave, 50 to 60 Hz, Gate Open) MAC16D MAC16M MAC16N VDRM, VRRM On-State RMS Current (Full Cycle Sine Wave, 60 Hz, TC = 80°C) IT(RMS) 16 ITSM 150 A I2t 93 A2sec PGM 20 W Peak Non-Repetitive Surge Current (One Full Cycle Sine Wave, 60 Hz, TJ = 125°C) Circuit Fusing Consideration (t = 8.3 ms) Peak Gate Power (Pulse Width ≤ 1.0 ms, TC = 80°C) Average Gate Power (t = 8.3 ms, TC = 80°C) Value Unit V 400 600 800 MAC16xG AYWW 1 2 TO−220AB CASE 221A−09 STYLE 4 3 A x A Y WW G = D, M, or N = Assembly Location = Year = Work Week = Pb−Free Package PIN ASSIGNMENT 1 Main Terminal 1 PG(AV) 0.5 W 2 Main Terminal 2 Operating Junction Temperature Range TJ −40 to +125 °C 3 Gate Storage Temperature Range Tstg −40 to +150 °C 4 Main Terminal 2 Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. 1. VDRM and VRRM for all types can be applied on a continuous basis. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded. *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. © Semiconductor Components Industries, LLC, 2005 December, 2005 − Rev. 3 1 ORDERING INFORMATION Device Package Shipping MAC16D TO−220AB 50 Units / Rail MAC16DG TO−220AB (Pb−Free) 50 Units / Rail MAC16M TO−220AB 50 Units / Rail MAC16MG TO−220AB (Pb−Free) 50 Units / Rail MAC16N TO−220AB 50 Units / Rail MAC16NG TO−220AB (Pb−Free) 50 Units / Rail Preferred devices are recommended choices for future use and best overall value. Publication Order Number: MAC16D/D MAC16D, MAC16M, MAC16N THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction−to−Case Junction−to−Ambient Maximum Lead Temperature for Soldering Purposes 1/8″ from Case for 10 Seconds Symbol Value Unit RqJC RqJA 2.0 62.5 °C/W TL 260 °C ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted; Electricals apply in both directions) Symbol Characteristic Min Typ Max Unit − − − − 0.01 2.0 − 1.2 1.6 10 10 10 16 18 22 50 50 50 − 20 50 − − − 33 36 33 50 80 50 0.5 0.5 0.5 0.75 0.72 0.82 1.5 1.5 1.5 (di/dt)c 9.0 − − A/ms dv/dt 500 − − V/ms OFF CHARACTERISTICS Peak Repetitive Blocking Current (VD = Rated VDRM, VRRM; Gate Open) TJ = 25°C TJ = 125°C IDRM, IRRM mA ON CHARACTERISTICS Peak On-State Voltage (Note 2) (ITM = ± 21 A Peak) VTM Gate Trigger Current (Continuous dc) (VD = 12 V, RL = 100 W) MT2(+), G(+) MT2(+), G(−) MT2(−), G(−) IGT Holding Current (VD = 12 V, Gate Open, Initiating Current = ±150 mA) IH Latching Current (VD = 24 V, IG = 50 mA) MT2(+), G(+) MT2(+), G(−) MT2(−), G(−) IL Gate Trigger Voltage (VD = 12 V, RL = 100 W) MT2(+), G(+) MT2(+), G(−) MT2(−), G(−) V mA mA mA VGT V DYNAMIC CHARACTERISTICS Rate of Change of Commutating Current, See Figure 10. (VD = 400 V, ITM = 6.0 A, Commutating dv/dt = 24 V/ms, Gate Open, TJ = 125°C, f = 250 Hz, No Snubber) CL = 10 mF LL = 40 mH Critical Rate of Rise of Off-State Voltage (VD = Rated VDRM, Exponential Waveform, Gate Open, TJ = 125°C) 2. Indicates Pulse Test: Pulse Width ≤ 2.0 ms, Duty Cycle ≤ 2%. http://onsemi.com 2 MAC16D, MAC16M, MAC16N Voltage Current Characteristic of Triacs (Bidirectional Device) + Current Symbol Parameter VTM VDRM Peak Repetitive Forward Off State Voltage IDRM Peak Forward Blocking Current VRRM Peak Repetitive Reverse Off State Voltage IRRM Peak Reverse Blocking Current VTM Maximum On State Voltage IH Holding Current on state IH IRRM at VRRM off state IH Quadrant 3 MainTerminal 2 − VTM Quadrant Definitions for a Triac MT2 POSITIVE (Positive Half Cycle) + (+) MT2 Quadrant II (+) MT2 (−) IGT GATE Quadrant I (+) IGT GATE MT1 MT1 REF REF IGT − + IGT (−) MT2 Quadrant III Quadrant 1 MainTerminal 2 + (−) MT2 Quadrant IV (+) IGT GATE (−) IGT GATE MT1 MT1 REF REF − MT2 NEGATIVE (Negative Half Cycle) All polarities are referenced to MT1. With in−phase signals (using standard AC lines) quadrants I and III are used. http://onsemi.com 3 + Voltage IDRM at VDRM 125 20 120 18 PAV, AVERAGE POWER (WATTS) TC, CASE TEMPERATURE (°C) MAC16D, MAC16M, MAC16N α = 30 and 60° 110 120° α = 180° 100 95 90° 14 α = 90° 105 60° 12 α = 120° 10 DC 90 α = 30° 8 6 4 85 2 0 2 4 6 8 10 12 IT(RMS), RMS ON-STATE CURRENT (AMP) 14 0 16 0 100 TYPICAL AT TJ = 25°C 2 4 6 8 10 12 IT(RMS), ON-STATE CURRENT (AMP) 14 16 Figure 2. On-State Power Dissipation r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED) Figure 1. RMS Current Derating I T, INSTANTANEOUS ON-STATE CURRENT (AMP) 180° 16 115 80 DC MAXIMUM @ TJ = 125°C 10 1 0.1 0.01 0.1 1 10 100 t, TIME (ms) 1000 1·10 4 Figure 4. Thermal Response MAXIMUM @ TJ = 25°C 40 I H, HOLD CURRENT (mA) 1 0.1 0 0.5 1 1.5 2 2.5 3 3.5 VT, INSTANTANEOUS ON-STATE VOLTAGE (VOLTS) MT2 POSITIVE MT2 NEGATIVE 5 −40 4 Figure 3. On-State Characteristics −10 20 50 80 TJ, JUNCTION TEMPERATURE (°C) Figure 5. Hold Current Variation http://onsemi.com 4 110 125 MAC16D, MAC16M, MAC16N Q2 VGT, GATE TRIGGER VOLTAGE (VOLT) 1 IGT, GATE TRIGGER CURRENT (mA) 100 Q3 Q1 VD = 12 V RL = 100 W 1 −40 −10 20 50 80 TJ, JUNCTION TEMPERATURE (°C) 110 VD = 12 V RL = 100 W Q1 Q3 Q2 0.5 −40 125 −10 5000 125 100 4K (dv/dt) c , CRITICAL RATE OF RISE OF COMMUTATING VOLTAGE(V/μ s) VD = 800 Vpk TJ = 125°C 3K 2K 1K 10 100 1000 RG, GATE TO MAIN TERMINAL 1 RESISTANCE (OHMS) 10000 TJ = 125°C 10 tw VDRM 10 75°C f= 1 2 tw (di/dt)c = 6f ITM 1000 20 30 40 50 60 70 80 90 100 (di/dt)c, RATE OF CHANGE OF COMMUTATING CURRENT (A/ms) Figure 9. Critical Rate of Rise of Commutating Voltage Figure 8. Critical Rate of Rise of Off-State Voltage (Exponential Waveform) LL 200 VRMS ADJUST FOR ITM, 60 Hz VAC CHARGE 100°C ITM 1 1N4007 MEASURE I TRIGGER CHARGE CONTROL NON-POLAR CL TRIGGER CONTROL dv/dt , CRITICAL RATE OF RISE OF OFF-STATE VOLTAGE(V/μ s) 110 Figure 7. Gate Trigger Voltage Variation Figure 6. Gate Trigger Current Variation 0 +20 50 80 TJ, JUNCTION TEMPERATURE (°C) − + 200 V MT2 1N914 51 W G MT1 Note: Component values are for verification of rated (di/dt)c. See AN1048 for additional information. Figure 10. Simplified Test Circuit to Measure the Critical Rate of Rise of Commutating Current (di/dt)c http://onsemi.com 5 MAC16D, MAC16M, MAC16N PACKAGE DIMENSIONS TO−220AB CASE 221A−09 ISSUE AA −T− B SEATING PLANE C F T S 4 DIM A B C D F G H J K L N Q R S T U V Z A Q 1 2 3 U H K Z L R V NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED. J G D N INCHES MIN MAX 0.570 0.620 0.380 0.405 0.160 0.190 0.025 0.035 0.142 0.147 0.095 0.105 0.110 0.155 0.018 0.025 0.500 0.562 0.045 0.060 0.190 0.210 0.100 0.120 0.080 0.110 0.045 0.055 0.235 0.255 0.000 0.050 0.045 −−− −−− 0.080 STYLE 4: PIN 1. 2. 3. 4. MILLIMETERS MIN MAX 14.48 15.75 9.66 10.28 4.07 4.82 0.64 0.88 3.61 3.73 2.42 2.66 2.80 3.93 0.46 0.64 12.70 14.27 1.15 1.52 4.83 5.33 2.54 3.04 2.04 2.79 1.15 1.39 5.97 6.47 0.00 1.27 1.15 −−− −−− 2.04 MAIN TERMINAL 1 MAIN TERMINAL 2 GATE MAIN TERMINAL 2 ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. 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Box 61312, Phoenix, Arizona 85082−1312 USA Phone: 480−829−7710 or 800−344−3860 Toll Free USA/Canada Japan: ON Semiconductor, Japan Customer Focus Center 2−9−1 Kamimeguro, Meguro−ku, Tokyo, Japan 153−0051 Fax: 480−829−7709 or 800−344−3867 Toll Free USA/Canada Phone: 81−3−5773−3850 Email: orderlit@onsemi.com http://onsemi.com 6 ON Semiconductor Website: http://onsemi.com Order Literature: http://www.onsemi.com/litorder For additional information, please contact your local Sales Representative. MAC16D/D