MBR350RL

MBR350, MBR360 MBR360 is a Preferred Device Axial Lead Rectifiers These devices employ the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlap contact. Ideally suited for use as rectifiers in low−voltage, high−frequency inverters, free wheeling diodes, and polarity protection diodes. http://onsemi.com Features • • • • • SCHOTTKY BARRIER RECTIFIERS 3.0 AMPERES 50, 60 VOLTS Extremely Low vF Low Power Loss/High Efficiency Highly Stable Oxide Passivated Junction Low Stored Charge, Majority Carrier Conduction Pb−Free Packages are Available* Mechanical Characteristics: • Case: Epoxy, Molded • Weight: 1.1 Gram (Approximately) • Finish: All External Surfaces Corrosion Resistant and Terminal • • Leads are Readily Solderable Lead Temperature for Soldering Purposes: 260°C Max. for 10 Seconds Polarity: Cathode indicated by Polarity Band AXIAL LEAD CASE 267−05 (DO−201AD) STYLE 1 MAXIMUM RATINGS Rating Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage Symbol MBR350 MBR360 VRRM VRWM VR Max Unit V Average Rectified Forward Current TA = 65°C (RqJA = 28°C/W, P.C. Board Mounting) IO 3.0 A Non−Repetitive Peak Surge Current (Note 1) (Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz, TL = 75°C) IFSM 80 A Operating and Storage Junction Temperature Range (Reverse Voltage Applied) TJ, Tstg −65 to +150 °C 28 °C/W THERMAL CHARACTERISTICS Thermal Resistance, Junction−to−Ambient (see Note 4 − Mounting Data, Mounting Method 3) RqJA MARKING DIAGRAM 50 60 Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Lead Temperature reference is cathode lead 1/32 in from case. A MBR 3x0G G A x G (Note: = Assembly Location = 5 or 6 = Pb−Free Package Microdot may be in either location) ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 3 of this data sheet. Preferred devices are recommended choices for future use and best overall value. *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. © Semiconductor Components Industries, LLC, 2006 June, 2006 − Rev. 6 1 Publication Order Number: MBR350/D MBR350, MBR360 ELECTRICAL CHARACTERISTICS (TL = 25°C unless otherwise noted) (Note 2) Characteristic Symbol Maximum Instantaneous Forward Voltage (Note 3) (iF = 1.0 Amp) (iF = 3.0 Amp) (iF = 9.4 Amp) vF Maximum Instantaneous Reverse Current @ Rated DC Voltage (Note 3) TL = 25°C TL = 100°C iR Max Unit V 0.600 0.740 1.080 mA 0.60 20 2. Lead Temperature reference is cathode lead 1/32 in from case. 3. Pulse Test: Pulse Width = 300 ms, Duty Cycle = 2.0%. 20 75°C 20 10 25°C I , REVERSE CURRENT (mA) R TJ = 100°C 10 7.0 3.0 2.0 100°C 75°C 0.20 0.10 0.05 *The curves shown are typical for the highest voltage device in the voltage grouping. Typical reverse current for lower voltage selections can be estimated from these same curves if VR is sufficiently below rated VR. 0.02 0.01 0.005 25°C 0.002 1.0 0 10 0.7 20 30 40 50 VR REVERSE VOLTAGE (VOLTS) 60 80 Figure 2. Typical Reverse Current* , AVERAGE FORWARD CURRENT (AMPS) 0.5 0.3 0.2 0.1 0.07 0.05 5.0 RATED VR RqJA = 28°C/W 4.0 DC 3.0 SQUARE WAVE 2.0 1.0 TJ = 150°C F (AV) 0.03 0.02 I i , INSTANTANEOUS FORWARD CURRENT (AMPS) F 5.0 TJ = 150°C 5.0 2.0 1.0 0.50 0 0.2 0.6 0.8 0.4 1.0 vF, INSTANTANEOUS VOLTAGE (VOLTS) 1.2 1.4 0 0 20 40 60 80 100 120 TA, AMBIENT TEMPERATURE (C°) 140 Figure 3. Current Derating Ambient (Mounting Method 3 per Note 4) Figure 1. Typical Forward Voltage http://onsemi.com 2 160 5.0 300 4.0 200 TJ = 150°C 3.0 C, CAPACITANCE (pF) P , AVERAGE POWER DISSIPATION (WATTS) F (AV) MBR350, MBR360 SQUARE WAVE 2.0 dc TJ = 25°C 100 70 50 1.0 40 0 30 0 1.0 2.0 3.0 4.0 IF (AV), AVERAGE FORWARD CURRENT (AMPS) 5.0 0 10 Figure 4. Power Dissipation 20 30 40 VR, REVERSE VOLTAGE (VOLTS) 50 Figure 5. Typical Capacitance NOTE 4 — MOUNTING DATA Data shown for thermal resistance, junction−to−ambient (RqJA) for the mountings shown is to be used as typical guideline values for preliminary engineering, or in case the tie point temperature cannot be measured. TYPICAL VALUES FOR RqJA IN STILL AIR Lead Length, L (in) Mounting Method 1/8 1/4 1/2 3/4 RqJA 1 50 51 53 55 °C/W 2 58 59 61 63 °C/W 3 Mounting Method 1 °C/W 28 Mounting Method 2 Mounting Method 3 ÉÉ ÉÉÉÉÉÉÉÉÉÉÉ ÉÉ ÉÉÉÉÉÉÉÉÉÉ ÉÉ ÉÉÉÉÉÉÉÉÉÉ ÉÉ ÉÉ ÉÉ ÉÉ P.C. Board where available copper surface is small. L L Vector Push−In Terminals T−28 L P.C. Board with 2−1/2 in X 2−1/2 in copper surface. L L = 1/2’’ Board Ground Plane ORDERING INFORMATION Package Shipping † MBR350RL Axial Lead 1500 Units / Tape & Reel MBR350RLG Axial Lead (Pb−Free) 1500 Units / Tape & Reel MBR360 Axial Lead 500 Units / Bag MBR360G Axial Lead (Pb−Free) 500 Units / Bag MBR360RL Axial Lead 1500 Units / Tape & Reel MBR360RLG Axial Lead (Pb−Free) 1500 Units / Tape & Reel Device †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. http://onsemi.com 3 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS AXIAL LEAD CASE 267−05 ISSUE G DATE 06/06/2000 SCALE 1:1 K D NOTES: 1. DIMENSIONS AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. 267-04 OBSOLETE, NEW STANDARD 267-05. A 1 2 B K STYLE 1: PIN 1. CATHODE (POLARITY BAND) 2. ANODE DOCUMENT NUMBER: DESCRIPTION: DIM A B D K 98ASB42170B AXIAL LEAD INCHES MIN MAX 0.287 0.374 0.189 0.209 0.047 0.051 1.000 --- MILLIMETERS MIN MAX 7.30 9.50 4.80 5.30 1.20 1.30 25.40 --- STYLE 2: NO POLARITY Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. 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