MBR41H100CTH

MBR41H100CT, NRVBB41H100CT Series Switch-mode Power Rectifier 100 V, 40 A www.onsemi.com Features and Benefits • • • • • • • • • 1 Low Forward Voltage: 0.67 V @ 125°C Low Power Loss/High Efficiency High Surge Capacity 175°C Operating Junction Temperature 40 A Total (20 A Per Diode Leg) Guard−Ring for Stress Protection NRVBB Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant MBR41H100CTH and MBRB41H100CT−1H are Halide−Free 2, 4 3 TO−220 CASE 221A STYLE 6 1 2 AYWW B41H100G AKA I2PAK (TO−262) CASE 418D STYLE 3 AYWW B41H100x AKA 1 3 Mechanical Characteristics: 4 • Case: Epoxy, Molded • Epoxy Meets UL 94 V−0 @ 0.125 in • Weight (Approximately): 1.9 Grams (TO−220) • D2PAK 3 CASE 418B STYLE 3 4 • Power Supply − Output Rectification • Power Management • Instrumentation AYWW B41H100x AKA 3 Applications • MARKING DIAGRAMS 4 1.7 Grams (D2PAK) 1.5 Grams (TO−262) Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable Lead Temperature for Soldering Purposes: 260°C Max. for 10 Seconds 12 3 A = Assembly Location Y = Year WW = Work Week x = G or H G = Pb−Free Package H = Halide−Free Package AKA = Polarity Designator ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 6 of this data sheet. © Semiconductor Components Industries, LLC, 2015 January, 2015 − Rev. 9 1 Publication Order Number: MBR41H100CT/D MBR41H100CT, NRVBB41H100CT Series MAXIMUM RATINGS (Per Diode Leg) Rating Symbol Value Unit Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage VRRM VRWM VR 100 V Average Rectified Forward Current (Rated VR) TC = 150°C IF(AV) Peak Repetitive Forward Current (Rated VR, Square Wave, 20 kHz) TC = 145°C IFRM Nonrepetitive Peak Surge Current (Surge applied at rated load conditions halfwave, single phase, 60 Hz) IFSM A 20 A 40 A 350 Operating Junction Temperature (Note 1) TJ +175 °C Storage Temperature Tstg *65 to +175 °C Voltage Rate of Change (Rated VR) dv/dt 10,000 V/ms WAVAL 400 mJ Controlled Avalanche Energy (see test conditions in Figures 10 and 11) ESD Ratings: Machine Model = C Human Body Model = 3B V > 400 > 8000 Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. The heat generated must be less than the thermal conductivity from Junction−to−Ambient: dPD/dTJ < 1/RqJA. THERMAL CHARACTERISTICS (Per Diode Leg) Characteristic Symbol Value RqJC RqJA 2.0 70 Symbol Value Unit °C/W Maximum Thermal Resistance Junction−to−Case Junction−to−Ambient ELECTRICAL CHARACTERISTICS (Per Diode Leg) Characteristic Maximum Instantaneous Forward Voltage (Note 2) (IF = 20 A, TC = 25°C) (IF = 20 A, TC = 125°C) (IF = 40 A, TC = 25°C) (IF = 40 A, TC = 125°C) vF Maximum Instantaneous Reverse Current (Note 2) (Rated DC Voltage, TC = 125°C) (Rated DC Voltage, TC = 25°C) iR Unit V 0.80 0.67 0.90 0.76 mA 10 0.01 Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 2. Pulse Test: Pulse Width = 300 ms, Duty Cycle ≤ 2.0%. www.onsemi.com 2 1000 100 TJ = 150°C 10 TJ = 125°C TJ = 25°C 1 0.1 0 0.2 0.4 0.6 1.0 0.8 1.2 VF, INSTANTANEOUS FORWARD VOLTAGE (VOLTS) IF, INSTANTANEOUS FORWARD CURRENT (AMPS) IF, INSTANTANEOUS FORWARD CURRENT (AMPS) MBR41H100CT, NRVBB41H100CT Series 1000 100 TJ = 150°C TJ = 125°C 10 TJ = 25°C 1 0.1 0 0.2 1.0E−01 IR, REVERSE CURRENT (AMPS) 1.0E−01 TJ = 125°C TJ = 125°C 1.0E−04 1.0E−05 1.0E−05 TJ = 25°C 1.0E−06 TJ = 25°C 1.0E−06 1.0E−07 1.0E−07 1.0E−08 0 40 20 60 80 100 60 80 100 VR, REVERSE VOLTAGE (VOLTS) Figure 3. Typical Reverse Current Figure 4. Maximum Reverse Current dc 25 SQUARE WAVE 15 10 5 110 40 20 VR, REVERSE VOLTAGE (VOLTS) 35 30 1.0E−08 0 PFO, AVERAGE POWER DISSIPATION (WATTS) IF, AVERAGE FORWARD CURRENT (AMPS) TJ = 150°C 1.0E−03 1.0E−04 0 100 1.2 1.0 1.0E−02 TJ = 150°C 1.0E−03 20 0.8 Figure 2. Maximum Forward Voltage IR, MAXIMUM REVERSE CURRENT (AMPS) Figure 1. Typical Forward Voltage 1.0E−02 0.6 0.4 VF, INSTANTANEOUS FORWARD VOLTAGE (VOLTS) 120 130 140 150 160 170 180 50 45 40 35 SQUARE 30 25 DC 20 15 10 5 0 0 5 10 15 20 25 30 35 40 45 TC, CASE TEMPERATURE (°C) IO, AVERAGE FORWARD CURRENT (AMPS) Figure 5. Current Derating Figure 6. Forward Power Dissipation www.onsemi.com 3 50 MBR41H100CT, NRVBB41H100CT Series 10000 C, CAPACITANCE (pF) TJ = 25°C 1000 100 10 0 20 40 80 60 100 VR, REVERSE VOLTAGE (VOLTS) R(t), TRANSIENT THERMAL RESISTANCE Figure 7. Capacitance 100 10 D = 0.5 0.2 0.1 0.05 1 0.01 0.1 P(pk) t1 0.01 t2 SINGLE PULSE DUTY CYCLE, D = t1/t2 0.001 0.000001 0.00001 0.0001 0.001 0.1 0.01 1 10 100 1000 t1, TIME (sec) R(t), TRANSIENT THERMAL RESISTANCE Figure 8. Thermal Response Junction−to−Ambient 10 1 0.1 D = 0.5 0.2 0.1 0.05 0.01 P(pk) 0.01 t1 SINGLE PULSE t2 DUTY CYCLE, D = t1/t2 0.001 0.000001 0.00001 0.0001 0.001 0.1 0.01 1 t1, TIME (sec) Figure 9. Thermal Response Junction−to−Case www.onsemi.com 4 10 100 1000 MBR41H100CT, NRVBB41H100CT Series +VDD IL 10 mH COIL BVDUT VD MERCURY SWITCH ID ID IL DUT S1 VDD t0 Figure 10. Test Circuit t1 t2 t Figure 11. Current−Voltage Waveforms The unclamped inductive switching circuit shown in Figure 10 was used to demonstrate the controlled avalanche capability of this device. A mercury switch was used instead of an electronic switch to simulate a noisy environment when the switch was being opened. When S1 is closed at t0 the current in the inductor IL ramps up linearly; and energy is stored in the coil. At t1 the switch is opened and the voltage across the diode under test begins to rise rapidly, due to di/dt effects, when this induced voltage reaches the breakdown voltage of the diode, it is clamped at BVDUT and the diode begins to conduct the full load current which now starts to decay linearly through the diode, and goes to zero at t2. By solving the loop equation at the point in time when S1 is opened; and calculating the energy that is transferred to the diode it can be shown that the total energy transferred is equal to the energy stored in the inductor plus a finite amount of energy from the VDD power supply while the diode is in breakdown (from t1 to t2) minus any losses due to finite component resistances. Assuming the component resistive elements are small Equation (1) approximates the total energy transferred to the diode. It can be seen from this equation that if the VDD voltage is low compared to the breakdown voltage of the device, the amount of energy contributed by the supply during breakdown is small and the total energy can be assumed to be nearly equal to the energy stored in the coil during the time when S1 was closed, Equation (2). EQUATION (1): ǒ BV 2 DUT W [ 1 LI LPK AVAL 2 BV V DUT DD EQUATION (2): 2 W [ 1 LI LPK AVAL 2 www.onsemi.com 5 Ǔ MBR41H100CT, NRVBB41H100CT Series ORDERING INFORMATION Package Shipping† MBR41H100CTG TO−220 (Pb−Free) 50 Units / Rail MBR41H100CTH TO−220 (Halide−Free) 50 Units / Rail MBRB41H100CT−1G I2PAK (Pb−Free) 50 Units / Rail MBRB41H100CT−1H (In Development) I2PAK (Halide−Free) 50 Units / Rail MBRB41H100CTT4G D2PAK 3 (Pb−Free) 800 Units / Tape & Reel NRVBB41H100CTT4G* D2PAK 3 (Pb−Free) 800 Units / Tape & Reel Device †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. *NRVBB Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q100 Qualified and PPAP Capable. www.onsemi.com 6 MBR41H100CT, NRVBB41H100CT Series PACKAGE DIMENSIONS TO−220 CASE 221A−09 ISSUE AH −T− B SEATING PLANE C F T S 4 DIM A B C D F G H J K L N Q R S T U V Z A Q 1 2 3 U H K Z L R V NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED. J G D N INCHES MIN MAX 0.570 0.620 0.380 0.415 0.160 0.190 0.025 0.038 0.142 0.161 0.095 0.105 0.110 0.161 0.014 0.024 0.500 0.562 0.045 0.060 0.190 0.210 0.100 0.120 0.080 0.110 0.045 0.055 0.235 0.255 0.000 0.050 0.045 ----0.080 STYLE 6: PIN 1. 2. 3. 4. www.onsemi.com 7 ANODE CATHODE ANODE CATHODE MILLIMETERS MIN MAX 14.48 15.75 9.66 10.53 4.07 4.83 0.64 0.96 3.61 4.09 2.42 2.66 2.80 4.10 0.36 0.61 12.70 14.27 1.15 1.52 4.83 5.33 2.54 3.04 2.04 2.79 1.15 1.39 5.97 6.47 0.00 1.27 1.15 ----2.04 MBR41H100CT, NRVBB41H100CT Series PACKAGE DIMENSIONS D2PAK 3 CASE 418B−04 ISSUE K NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. 418B−01 THRU 418B−03 OBSOLETE, NEW STANDARD 418B−04. C E V W −B− 4 DIM A B C D E F G H J K L M N P R S V A 1 2 S 3 −T− SEATING PLANE K W J G D 3 PL 0.13 (0.005) VARIABLE CONFIGURATION ZONE H M T B M N R M STYLE 3: PIN 1. ANODE 2. CATHODE 3. ANODE 4. CATHODE P U L L L M M F F F VIEW W−W 1 VIEW W−W 2 VIEW W−W 3 SOLDERING FOOTPRINT* 10.49 8.38 16.155 2X 3.504 2X 1.016 5.080 PITCH DIMENSIONS: MILLIMETERS *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. www.onsemi.com 8 INCHES MIN MAX 0.340 0.380 0.380 0.405 0.160 0.190 0.020 0.035 0.045 0.055 0.310 0.350 0.100 BSC 0.080 0.110 0.018 0.025 0.090 0.110 0.052 0.072 0.280 0.320 0.197 REF 0.079 REF 0.039 REF 0.575 0.625 0.045 0.055 MILLIMETERS MIN MAX 8.64 9.65 9.65 10.29 4.06 4.83 0.51 0.89 1.14 1.40 7.87 8.89 2.54 BSC 2.03 2.79 0.46 0.64 2.29 2.79 1.32 1.83 7.11 8.13 5.00 REF 2.00 REF 0.99 REF 14.60 15.88 1.14 1.40 MBR41H100CT, NRVBB41H100CT Series PACKAGE DIMENSIONS I2PAK (TO−262) CASE 418D ISSUE D C E V −B− NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 4 A W 1 2 DIM A B C D E F G H J K S V W 3 F −T− SEATING PLANE K S J G D 3 PL 0.13 (0.005) M T B H M INCHES MIN MAX 0.335 0.380 0.380 0.406 0.160 0.185 0.026 0.035 0.045 0.055 0.122 REF 0.100 BSC 0.094 0.110 0.013 0.025 0.500 0.562 0.390 REF 0.045 0.070 0.522 0.551 STYLE 3: PIN 1. 2. 3. 4. MILLIMETERS MIN MAX 8.51 9.65 9.65 10.31 4.06 4.70 0.66 0.89 1.14 1.40 3.10 REF 2.54 BSC 2.39 2.79 0.33 0.64 12.70 14.27 9.90 REF 1.14 1.78 13.25 14.00 ANODE CATHODE ANODE CATHODE ON Semiconductor and the are registered trademarks of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other countries. SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. SCILLC reserves the right to make changes without further notice to any products herein. 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