MBRB20100CTG

MBRB20100CTG, NRVBB20100CTT4G, NRVBBS20100CTT4G SWITCHMODE Power Rectifier D2PAK Surface Mount Power Package The D2PAK Power Rectifier is a state−of−the−art device that employs the use of the Schottky Barrier principle with a platinum barrier metal. Features • • • • • • • • • • Package Designed for Power Surface Mount Applications Center−Tap Configuration Guardring for Stress Protection Low Forward Voltage 175°C Operating Junction Temperature Epoxy Meets UL 94 V−0 @ 0.125 in Short Heat Sink Tab Manufactured − Not Sheared! Similar in Size to Industry Standard TO−220 Package NRVBB and NRVBBS Prefixes for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable These Devices are Pb−Free and are RoHS Compliant* http://onsemi.com SCHOTTKY BARRIER RECTIFIER 20 AMPERES 100 VOLTS D2PAK CASE 418B STYLE 3 1 4 3 MARKING DIAGRAM Mechanical Characteristics • Case: Epoxy, Molded, Epoxy Meets UL 94 V−0 • Weight: 1.4 Grams (Approximately) • Finish: All External Surfaces Corrosion Resistant and Terminal AY WW B20100G AKA Leads are Readily Solderable • Lead and Mounting Surface Temperature for Soldering Purposes: 260°C Max. for 10 Seconds • MBRB20100CTG, NRVBB20100CTT4G Meets MSL1 Requirements A Y WW B20100 G AKA • NRVBBS20100CTT4G Meets MSL2 Requirements • ESD Ratings: ♦ ♦ Machine Model = C (> 400 V) Human Body Model = 3B (> 8000 V) = Assembly Location = Year = Work Week = Device Code = Pb−Free Package = Diode Polarity ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 2 of this data sheet. *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. © Semiconductor Components Industries, LLC, 2012 August, 2012 − Rev. 10 1 Publication Order Number: MBRB20100CT/D MBRB20100CTG, NRVBB20100CTT4G, NRVBBS20100CTT4G MAXIMUM RATINGS (Per Leg) Rating Symbol Value Unit Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage VRRM VRWM VR 100 V Average Rectified Forward Current Per Leg (Rated VR, TC = 155°C) Total Device IF(AV) 10 20 A Peak Repetitive Forward Current (Rated VR, Square Wave, 20 kHz, TC = 150°C) IFRM Non−Repetitive Peak Surge Current (Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz) IFSM Peak Repetitive Reverse Surge Current (2.0 ms, 1.0 kHz) IRRM Storage Temperature Range Tstg −65 to +175 °C Operating Junction Temperature (Note 1) TJ −65 to +175 °C dv/dt 10,000 V/ms Voltage Rate of Change (Rated VR) 20 150 0.5 A A A Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. The heat generated must be less than the thermal conductivity from Junction−to−Ambient: dPD/dTJ < 1/RqJA. THERMAL CHARACTERISTICS (Per Leg) Symbol Characteristic Thermal Resistance, Junction−to−Case Junction−to−Ambient (Note 2) Value RqJC RqJA 2.0 50 Symbol Value Unit °C/W 2. When mounted using minimum recommended pad size on FR−4 board. ELECTRICAL CHARACTERISTICS (Per Leg) Characteristic Maximum Instantaneous Forward Voltage (Note 3) (iF = 10 Amp, TC = 125°C) (iF = 10 Amp, TC = 25°C) (iF = 20 Amp, TC = 125°C) (iF = 20 Amp, TC = 25°C) vF Maximum Instantaneous Reverse Current (Note 3) (Rated dc Voltage, TJ = 125°C) (Rated dc Voltage, TJ = 25°C) iR 0.75 0.85 0.85 0.95 6.0 0.1 Unit V mA 3. Pulse Test: Pulse Width = 300 ms, Duty Cycle ≤ 2.0%. ORDERING INFORMATION Package Shipping† D2PAK 50 Units / Rail MBRB20100CTT4G D2PAK (Pb−Free) 800 Units / Tape & Reel NRVBB20100CTT4G D2PAK (Pb−Free) 800 Units / Tape & Reel NRVBBS20100CTT4G D2PAK (Pb−Free) 800 Units / Tape & Reel Device MBRB20100CTG (Pb−Free) †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. http://onsemi.com 2 10 50 TJ = 150°C 125°C 20 IR , REVERSE CURRENT (mA) i F, INSTANTANEOUS FORWARD CURRENT (AMPS) MBRB20100CTG, NRVBB20100CTT4G, NRVBBS20100CTT4G 150°C 10 100°C 5 TJ = 25°C 3 1 1.0 125°C 0.1 100°C 0.01 0.001 25°C 0.5 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 0.0001 1 0 20 vF, INSTANTANEOUS VOLTAGE (VOLTS) 100 80 Figure 2. Typical Reverse Current Per Diode 20 20 RATED VOLTAGE APPLIED RqJC = 2°C/W 18 AVERAGE POWER (WATTS) dc 60 VR, REVERSE VOLTAGE (VOLTS) Figure 1. Typical Forward Voltage Per Diode IF(AV) , AVERAGE FORWARD CURRENT (AMPS) 40 15 SQUARE WAVE 10 5.0 IPK/IAV = 5 TJ = 125°C PI 16 IPK/IAV = 10 14 12 IPK/IAV = 20 10 SQUARE WAVE 8 6 DC 4 2 0 80 100 120 140 TC, CASE TEMPERATURE (°C) 160 0 180 Figure 3. Typical Current Derating, Case, Per Leg 0 2 4 6 8 10 12 14 AVERAGE CURRENT (AMPS) 16 18 20 Figure 4. Average Power Dissipation & Average Current http://onsemi.com 3 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS D2PAK 3 CASE 418B−04 ISSUE L DATE 17 FEB 2015 SCALE 1:1 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. 418B−01 THRU 418B−03 OBSOLETE, NEW STANDARD 418B−04. C E −B− V W 4 1 2 A S 3 −T− SEATING PLANE K W J G D DIM A B C D E F G H J K L M N P R S V H 3 PL 0.13 (0.005) M T B M VARIABLE CONFIGURATION ZONE N R P L M STYLE 1: PIN 1. BASE 2. COLLECTOR 3. EMITTER 4. COLLECTOR L M F F F VIEW W−W 1 VIEW W−W 2 VIEW W−W 3 STYLE 2: PIN 1. GATE 2. DRAIN 3. SOURCE 4. DRAIN MILLIMETERS MIN MAX 8.64 9.65 9.65 10.29 4.06 4.83 0.51 0.89 1.14 1.40 7.87 8.89 2.54 BSC 2.03 2.79 0.46 0.64 2.29 2.79 1.32 1.83 7.11 8.13 5.00 REF 2.00 REF 0.99 REF 14.60 15.88 1.14 1.40 U L M INCHES MIN MAX 0.340 0.380 0.380 0.405 0.160 0.190 0.020 0.035 0.045 0.055 0.310 0.350 0.100 BSC 0.080 0.110 0.018 0.025 0.090 0.110 0.052 0.072 0.280 0.320 0.197 REF 0.079 REF 0.039 REF 0.575 0.625 0.045 0.055 STYLE 3: PIN 1. ANODE 2. CATHODE 3. ANODE 4. CATHODE STYLE 4: PIN 1. GATE 2. COLLECTOR 3. EMITTER 4. COLLECTOR STYLE 5: STYLE 6: PIN 1. CATHODE PIN 1. NO CONNECT 2. ANODE 2. CATHODE 3. CATHODE 3. ANODE 4. ANODE 4. CATHODE MARKING INFORMATION AND FOOTPRINT ON PAGE 2 DOCUMENT NUMBER: DESCRIPTION: 98ASB42761B D2PAK 3 Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 2 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the rights of others. © Semiconductor Components Industries, LLC, 2019 www.onsemi.com D2PAK 3 CASE 418B−04 ISSUE L DATE 17 FEB 2015 GENERIC MARKING DIAGRAM* xx xxxxxxxxx AWLYWWG xxxxxxxxG AYWW AYWW xxxxxxxxG AKA IC Standard Rectifier xx A WL Y WW G AKA = Specific Device Code = Assembly Location = Wafer Lot = Year = Work Week = Pb−Free Package = Polarity Indicator *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “ G”, may or may not be present. SOLDERING FOOTPRINT* 10.49 8.38 16.155 2X 3.504 2X 1.016 5.080 PITCH DIMENSIONS: MILLIMETERS *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. DOCUMENT NUMBER: DESCRIPTION: 98ASB42761B D2PAK 3 Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 2 OF 2 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. 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