MBRM110LT3G

MBRM110LT1G, NRVBM110LT1G, NRVBM110LT3G Surface Mount Schottky Power Rectifier POWERMITE Power Surface Mount Package The Schottky POWERMITE employs the Schottky Barrier principle with a barrier metal and epitaxial construction that produces optimal forward voltage drop−reverse current tradeoff. The advanced packaging techniques provide for a highly efficient micro miniature, space saving surface mount Rectifier. With its unique heatsink design, the POWERMITE has the same thermal performance as the SMA while being 50% smaller in footprint area, and delivering one of the lowest height profiles,  1.1 mm in the industry. Because of its small size, it is ideal for use in portable and battery powered products such as cellular and cordless phones, chargers, notebook computers, printers, PDAs and PCMCIA cards. Typical applications are AC−DC and DC−DC converters, reverse battery protection, and “ORing” of multiple supply voltages and any other application where performance and size are critical. Features          Ultra Low VF 1st in Marketplace with a 10 VR Schottky Rectifier Low Profile − Maximum Height of 1.1 mm Small Footprint − Footprint Area of 8.45 mm2 Low Thermal Resistance with Direct Thermal Path of Die on Exposed Cathode Heat Sink ESD Ratings:  Human Body Model > 4000 V (Class 3)  Machine Model > 400 V (Class C) AEC−Q101 Qualified and PPAP Capable NRVB Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements All Packages are Pb−Free* Mechanical Characteristics:      POWERMITE is JEDEC Registered as D0−216AA Case: Molded Epoxy Epoxy Meets UL 94 V−0 @ 0.125 in Weight: 62 mg (Approximately) Lead and Mounting Surface Temperature for Soldering Purposes: 260C Maximum for 10 Seconds http://onsemi.com SCHOTTKY BARRIER RECTIFIER 1.0 AMPERES, 10 VOLTS ANODE CATHODE POWERMITE CASE 457 PLASTIC MARKING DIAGRAM 1 M 1L1 G M 1L1G 2 = Date Code = Device Code = Pb−Free Package ORDERING INFORMATION Package Shipping† MBRM110LT1G POWERMITE (Pb−Free) 3,000 / Tape & Reel NRVBM110LT1G POWERMITE (Pb−Free) 3,000 / Tape & Reel MBRM110LT3G POWERMITE (Pb−Free) 12,000 / Tape & Reel NRVBM110LT3G POWERMITE (Pb−Free) 12,000 / Tape & Reel Device †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.  Semiconductor Components Industries, LLC, 2012 January, 2012 − Rev. 2 1 Publication Order Number: MBRM110L/D MBRM110LT1G, NRVBM110LT1G, NRVBM110LT3G MAXIMUM RATINGS Rating Symbol Value Unit VRRM VRWM VR 10 V Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage Average Rectified Forward Current (TL = 115C, RqJL = 35C/W) IO A 1.0 Non−Repetitive Peak Surge Current (Non−Repetitive peak surge current, halfwave, single phase, 60 Hz) IFSM Storage Temperature Tstg −55 to 125 C Operating Junction Temperature TJ −55 to 125 C Voltage Rate of Change (Rated VR, TJ = 25C) A 50 dv/dt 10,000 V/ms Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. THERMAL CHARACTERISTICS Characteristic Symbol Value Unit Rtjl Rtjtab Rtja 35 23 277 C/W Thermal Resistance, Junction−to−Lead (Anode) (Note 1) Thermal Resistance, Junction−to−Tab (Cathode) (Note 1) Thermal Resistance, Junction−to−Ambient (Note 1) 1. Mounted with minimum recommended pad size, PC Board FR4, See Figures 8 and 9. ELECTRICAL CHARACTERISTICS Characteristic Symbol Value VF Maximum Instantaneous Forward Voltage (Note 2) TJ = 100C 0.280 0.365 0.415 0.175 0.275 0.325 TJ = 25C TJ = 100C 0.2 0.5 30 60 (IF = 0.1 A) (IF = 1.0 A) (IF = 2.0 A) IR Maximum Instantaneous Reverse Current (Note 2) Unit TJ = 25C (VR = 5.0 V) (VR = 10 V) V mA 10 IF, INSTANTANEOUS FORWARD CURRENT (AMPS) IF, INSTANTANEOUS FORWARD CURRENT (AMPS) 2. Pulse Test: Pulse Width  250 ms, Duty Cycle  2%. TJ = 125C 100C 75C 25C 1 −55C 0.1 0.1 0.2 0.3 0.4 0.5 0.6 0.7 VF, INSTANTANEOUS FORWARD VOLTAGE (VOLTS) 10 TJ = 125C 100C 75C 1 25C 0.1 0.1 0.2 0.3 −55C 0.4 0.5 0.6 Figure 1. Typical Forward Voltage Figure 2. Maximum Forward Voltage http://onsemi.com 2 0.7 VF, INSTANTANEOUS FORWARD VOLTAGE (VOLTS) 1E−1 TJ = 125C 1E−2 100C 75C 1E−3 1E−4 25C 1E−5 1E−6 1 0 2 3 4 5 6 7 8 9 10 VR, REVERSE VOLTAGE (VOLTS) IR, INSTANTANEOUS REVERSE VOLTAGE (VOLTS) IR, INSTANTANEOUS REVERSE VOLTAGE (VOLTS) MBRM110LT1G, NRVBM110LT1G, NRVBM110LT3G 1E+0 TJ = 125C 1E−1 100C 75C 1E−2 1E−3 25C 1E−4 1E−5 0 1 3 4 5 6 7 8 9 10 VR, REVERSE VOLTAGE (VOLTS) Figure 3. Typical Reverse Current IF , AVERAGE FORWARD CURRENT (AMPS) 2 Figure 4. Maximum Reverse Current 1.8 dc 1.6 1.4 SQUARE WAVE 1.2 1.0 0.8 0.6 0.4 0.2 0 0 20 60 40 80 100 120 140 TL, LEAD TEMPERATURE (C) 500 C, CAPACITANCE (pF) 450 400 350 300 TJ = 25C f = 1 MHz 250 200 150 100 0 1 2 3 4 5 6 7 8 VR, REVERSE VOLTAGE (VOLTS) 9 10 PFO, AVERAGE POWER DISSIPATION (WATTS) Figure 5. Current Derating − Junction to Lead 0.45 0.4 dc 0.35 0.3 SQUARE WAVE 0.25 0.2 0.15 0.1 0.05 0 0 Figure 6. Typical Capacitance 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 IO, AVERAGE FORWARD CURRENT (AMPS) Figure 7. Forward Power Dissipation http://onsemi.com 3 1.8 R (T) , TRANSIENT THERMAL RESISTANCE (NORMALIZED) MBRM110LT1G, NRVBM110LT1G, NRVBM110LT3G 1.0 50% 20% 0.1 10% 5.0% 0.01 2.0% 1.0% Rtjl(t) = Rtjl*r(t) 0.001 0.00001 0.0001 0.001 0.01 0.1 1.0 10 100 T, TIME (s) R (T) , TRANSIENT THERMAL RESISTANCE (NORMALIZED) Figure 8. Thermal Response Junction to Lead 1.0 50% 20% 0.1 10% 5.0% 0.01 2.0% Rtjl(t) = Rtjl*r(t) 1.0% 0.001 0.00001 0.0001 0.001 0.01 0.1 1.0 T, TIME (s) Figure 9. Thermal Response Junction to Ambient POWERMITE is a registered trademark of and used under a license from Microsemi Corporation. http://onsemi.com 4 10 100 1,000 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS POWERMITE CASE 457 ISSUE G DATE 12 JAN 2022 SCALE 4:1 GENERIC MARKING DIAGRAMS* 1 M XXXG 2 1 STYLE 1 1 M XXXG 2 STYLE 2 M XXXG 2 XXX = Specific Device Code M = Date Code G = Pb−Free Package STYLE 3 DOCUMENT NUMBER: DESCRIPTION: STYLE 1: PIN 1. CATHODE 2. ANODE 98ASB14853C POWERMITE STYLE 2: PIN 1. ANODE OR CATHODE 2. CATHODE OR ANODE (BI−DIRECTIONAL) STYLE 3: PIN 1. ANODE 2. CATHODE *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “G”, may or may not be present. Some products may not follow the Generic Marking. Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. 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