MBT2222ADW1T1G

MBT2222ADW1, NSVBT2222ADW1 General Purpose Transistor NPN Silicon http://onsemi.com Features • Moisture Sensitivity Level: 1 • NSV Prefix for Automotive and Other Applications Requiring • Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant Symbol Value Unit Collector−Emitter Voltage VCEO 40 Vdc Collector−Base Voltage VCBO 75 Vdc Emitter−Base Voltage VEBO 6.0 Vdc IC 600 mAdc Collector Current − Continuous Electrostatic Discharge ESD HBM Class 2 MM Class B Total Package Dissipation (Note 1), TA = 25°C Thermal Resistance, Junction−to−Ambient Junction and Storage Temperature Q1 (1) Q2 (5) (6) 1 SC−88/SC70−6/SOT−363 CASE 419B STYLE 1 MARKING DIAGRAM THERMAL CHARACTERISTICS Characteristic (2) (4) MAXIMUM RATINGS Rating (3) Symbol Max Unit PD 150 mW RqJA 833 °C/W TJ, Tstg −55 to +150 °C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Device mounted on FR4 glass epoxy printed circuit board using the minimum recommended footprint. 6 1P M G G 1 1P = Specific Device Code M = Date Code G = Pb−Free Package (Note: Microdot may be in either location) ORDERING INFORMATION Package Shipping† MBT2222ADW1T1G SOT−363 (Pb−Free) 3000 / Tape & Reel NSVBT2222ADW1T1G SOT−363 (Pb−Free) 3000 / Tape & Reel Device †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. © Semiconductor Components Industries, LLC, 2013 September, 2013 − Rev. 5 1 Publication Order Number: MBT2222ADW1T1/D MBT2222ADW1, NSVBT2222ADW1 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Collector−Emitter Breakdown Voltage (IC = 10 mAdc, IB = 0) V(BR)CEO 40 − Vdc Collector−Base Breakdown Voltage (IC = 10 mAdc, IE = 0) V(BR)CBO 75 − Vdc Emitter−Base Breakdown Voltage, (IE = 10 mAdc, IC = 0) V(BR)EBO 6.0 − Vdc ICEX − 10 nAdc − − 0.01 10 IEBO − 100 nAdc IBL − 20 nAdc 35 50 75 35 100 50 40 − − − − 300 − − − − 0.3 1.0 0.6 − 1.2 2.0 fT 300 − MHz Collector Cutoff Current (VCE = 60 Vdc, VEB(off) = 3.0 Vdc) Collector Cutoff Current (VCB = 60 Vdc, IE = 0) (VCB = 60 Vdc, IE = 0, TA = 125°C) Emitter Cutoff Current (VEB = 3.0 Vdc, IC = 0) Base Cutoff Current (VCE = 60 Vdc, VEB(off) = 3.0 Vdc) ICBO mAdc ON CHARACTERISTICS DC Current Gain (IC = 0.1 mAdc, VCE = 10 Vdc) (IC = 1.0 mAdc, VCE = 10 Vdc) (IC = 10 mAdc, VCE = 10 Vdc) (IC = 10 mAdc, VCE = 10 Vdc, TA = −55°C) (IC = 150 mAdc, VCE = 10 Vdc) (Note 2) (IC = 150 mAdc, VCE = 1.0 Vdc) (Note 2) (IC = 500 mAdc, VCE = 10 Vdc) (Note 2) Collector−Emitter Saturation Voltage (Note 2) Base−Emitter Saturation Voltage (Note 2) (IC = 150 mAdc, IB = 15 mAdc) (IC = 500 mAdc, IB = 50 mAdc) (IC = 150 mAdc, IB = 15 mAdc) (IC = 500 mAdc, IB = 50 mAdc) hFE VCE(sat) VBE(sat) − Vdc Vdc SMALL− SIGNAL CHARACTERISTICS Current−Gain − Bandwidth Product (Note 3) (IC = 20 mAdc, VCE = 20 Vdc, f = 100 MHz) Output Capacitance (VCB = 10 Vdc, IE = 0, f = 1.0 MHz) Cobo − 8.0 pF Input Capacitance (VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz) Cibo − 25 pF 2.0 0.25 8.0 1.25 − − 8.0 4.0 50 75 300 375 5.0 25 35 200 rb, Cc − 150 ps NF − 4.0 dB (VCC = 30 Vdc, VBE(off) = − 0.5 Vdc, IC = 150 mAdc, IB1 = 15 mAdc) td − 10 tr − 25 (VCC = 30 Vdc, IC = 150 mAdc, IB1 = IB2 = 15 mAdc) ts − 225 tf − 60 Input Impedance (IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) (IC = 10 mAdc, VCE = 10 Vdc, f = 1.0 kHz) Voltage Feedback Ratio (IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) (IC = 10 mAdc, VCE = 10 Vdc, f = 1.0 kHz) Small−Signal Current Gain (IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) (IC = 10 mAdc, VCE = 10 Vdc, f = 1.0 kHz) Output Admittance (IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) (IC = 10 mAdc, VCE = 10 Vdc, f = 1.0 kHz) Collector Base Time Constant Noise Figure (IE = 20 mAdc, VCB = 20 Vdc, f = 31.8 MHz) (IC = 100 mAdc, VCE = 10 Vdc, RS = 1.0 kW, f = 1.0 kHz) hie hre hfe hoe kW X 10− 4 − mmhos SWITCHING CHARACTERISTICS Delay Time Rise Time Storage Time Fall Time 2. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2.0%. 3. fT is defined as the frequency at which |hfe| extrapolates to unity. http://onsemi.com 2 ns ns MBT2222ADW1, NSVBT2222ADW1 SWITCHING TIME EQUIVALENT TEST CIRCUITS +30 V +30 V 1.0 to 100 ms, DUTY CYCLE ≈ 2.0% +16 V 200 1.0 to 100 ms, DUTY CYCLE ≈ 2.0% +16 V 200 0 0 -2 V 1 kW < 2 ns 1k -14 V CS* < 10 pF < 20 ns CS* < 10 pF 1N914 -4 V Scope rise time < 4 ns *Total shunt capacitance of test jig, connectors, and oscilloscope. Figure 1. Turn−On Time Figure 2. Turn−Off Time hFE , DC CURRENT GAIN 1000 700 500 TJ = 125°C 300 200 25°C 100 70 50 -55°C 30 VCE = 1.0 V VCE = 10 V 20 10 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 IC, COLLECTOR CURRENT (mA) 50 70 100 200 300 500 700 1.0 k VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) Figure 3. DC Current Gain 1.0 TJ = 25°C 0.8 0.6 IC = 1.0 mA 10 mA 150 mA 500 mA 0.4 0.2 0 0.005 0.01 0.02 0.03 0.05 0.1 0.2 0.3 0.5 1.0 IB, BASE CURRENT (mA) 2.0 Figure 4. Collector Saturation Region http://onsemi.com 3 3.0 5.0 10 20 30 50 MBT2222ADW1, NSVBT2222ADW1 200 500 IC/IB = 10 TJ = 25°C tr @ VCC = 30 V td @ VEB(off) = 2.0 V td @ VEB(off) = 0 30 20 10 7.0 5.0 200 t′s = ts - 1/8 tf 100 70 50 tf 30 20 10 7.0 5.0 3.0 2.0 5.0 7.0 10 20 30 50 70 100 200 300 IC, COLLECTOR CURRENT (mA) 500 5.0 7.0 10 20 30 50 70 100 200 IC, COLLECTOR CURRENT (mA) Figure 5. Turn−On Time 500 10 RS = OPTIMUM RS = SOURCE RS = RESISTANCE IC = 1.0 mA, RS = 150 W 500 mA, RS = 200 W 100 mA, RS = 2.0 kW 50 mA, RS = 4.0 kW 8.0 6.0 f = 1.0 kHz 8.0 NF, NOISE FIGURE (dB) NF, NOISE FIGURE (dB) 300 Figure 6. Turn−Off Time 10 4.0 2.0 IC = 50 mA 100 mA 500 mA 1.0 mA 6.0 4.0 2.0 0 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 500 1.0 k 2.0 k 5.0 k 10 k 20 k 50 k 100 k Figure 7. Frequency Effects Figure 8. Source Resistance Effects 10 7.0 5.0 Ccb 3.0 2.0 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 REVERSE VOLTAGE (VOLTS) 20 30 50 f T, CURRENT-GAIN BANDWIDTH PRODUCT (MHz) RS, SOURCE RESISTANCE (OHMS) Ceb 0.2 0.3 100 200 f, FREQUENCY (kHz) 20 0.1 0 50 50 100 30 CAPACITANCE (pF) VCC = 30 V IC/IB = 10 IB1 = IB2 TJ = 25°C 300 t, TIME (ns) t, TIME (ns) 100 70 50 Figure 9. Capacitances 500 VCE = 20 V TJ = 25°C 300 200 100 70 50 1.0 2.0 3.0 5.0 7.0 10 20 30 IC, COLLECTOR CURRENT (mA) 50 70 100 Figure 10. Current−Gain Bandwidth Product http://onsemi.com 4 MBT2222ADW1, NSVBT2222ADW1 1.0 +0.5 TJ = 25°C 0 COEFFICIENT (mV/° C) V, VOLTAGE (VOLTS) 0.8 VBE(sat) @ IC/IB = 10 1.0 V 0.6 VBE(on) @ VCE = 10 V 0.4 0.2 RqVC for VCE(sat) -0.5 -1.0 -1.5 RqVB for VBE -2.0 VCE(sat) @ IC/IB = 10 0 -2.5 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 IC, COLLECTOR CURRENT (mA) 500 1.0 k 0.1 0.2 Figure 11. “On” Voltages 0.5 1.0 2.0 5.0 10 20 50 100 200 IC, COLLECTOR CURRENT (mA) Figure 12. Temperature Coefficients http://onsemi.com 5 500 MBT2222ADW1, NSVBT2222ADW1 PACKAGE DIMENSIONS SC−88/SC70−6/SOT−363 CASE 419B−02 ISSUE Y 2X aaa H D D H A D 6 5 GAGE PLANE 4 1 2 L L2 E1 E DETAIL A 3 aaa C 2X bbb H D 2X 3 TIPS e B 6X b ddd TOP VIEW M A2 A 6X ccc C A1 SIDE VIEW C C A-B D DETAIL A SEATING PLANE END VIEW c NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. DIMENSIONS D AND E1 DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR GATE BURRS. MOLD FLASH, PROTRUSIONS, OR GATE BURRS SHALL NOT EXCEED 0.20 PER END. 4. DIMENSIONS D AND E1 AT THE OUTERMOST EXTREMES OF THE PLASTIC BODY AND DATUM H. 5. DATUMS A AND B ARE DETERMINED AT DATUM H. 6. DIMENSIONS b AND c APPLY TO THE FLAT SECTION OF THE LEAD BETWEEN 0.08 AND 0.15 FROM THE TIP. 7. DIMENSION b DOES NOT INCLUDE DAMBAR PROTRUSION. ALLOWABLE DAMBAR PROTRUSION SHALL BE 0.08 TOTAL IN EXCESS OF DIMENSION b AT MAXIMUM MATERIAL CONDITION. THE DAMBAR CANNOT BE LOCATED ON THE LOWER RADIUS OF THE FOOT. MILLIMETERS INCHES DIM MIN NOM MAX MIN NOM MAX A −−− −−− 1.10 −−− −−− 0.043 A1 0.00 −−− 0.10 0.000 −−− 0.004 A2 0.70 0.90 1.00 0.027 0.035 0.039 b 0.15 0.20 0.25 0.006 0.008 0.010 C 0.08 0.15 0.22 0.003 0.006 0.009 D 1.80 2.00 2.20 0.070 0.078 0.086 E 2.00 2.10 2.20 0.078 0.082 0.086 E1 1.15 1.25 1.35 0.045 0.049 0.053 e 0.65 BSC 0.026 BSC L 0.26 0.36 0.46 0.010 0.014 0.018 L2 0.15 BSC 0.006 BSC aaa 0.15 0.006 bbb 0.30 0.012 ccc 0.10 0.004 ddd 0.10 0.004 STYLE 1: PIN 1. EMITTER 2 2. BASE 2 3. COLLECTOR 1 4. EMITTER 1 5. BASE 1 6. COLLECTOR 2 RECOMMENDED SOLDERING FOOTPRINT* 6X 6X 0.30 0.66 2.50 0.65 PITCH DIMENSIONS: MILLIMETERS *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent− Marking.pdf. SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada Email: orderlit@onsemi.com N. American Technical Support: 800−282−9855 Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: 421 33 790 2910 Japan Customer Focus Center Phone: 81−3−5817−1050 http://onsemi.com 6 ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your loca Sales Representative MBT2222ADW1T1/D