MBT35200MT1
High Current Surface
Mount PNP Silicon
Switching Transistor
for Load Management
in Portable Applications
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Features
• AEC−Q101 Qualified and PPAP Capable
• S Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements
35 VOLTS
2.0 AMPS
PNP TRANSISTOR
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS (TA = 25°C)
Rating
Symbol
Max
Unit
Collector-Emitter Voltage
VCEO
−35
Vdc
Collector-Base Voltage
VCBO
−55
Vdc
Emitter-Base Voltage
VEBO
−5.0
Vdc
Collector Current − Continuous
IC
−2.0
Adc
Collector Current − Peak
ICM
−5.0
A
Electrostatic Discharge
ESD
CASE 318G
TSOP−6
STYLE 6
COLLECTOR
1, 2, 5, 6
3
BASE
HBM Class 3
MM Class C
4
EMITTER
THERMAL CHARACTERISTICS
Characteristic
Symbol
Total Device Dissipation
TA = 25°C
Derate above 25°C
PD (Note 1)
Thermal Resistance,
Junction−to−Ambient
RqJA (Note 1)
Total Device Dissipation
TA = 25°C
Derate above 25°C
PD (Note 2)
Thermal Resistance,
Junction−to−Ambient
RqJA (Note 2)
Thermal Resistance,
Junction−to−Lead #1
RqJL
Total Device Dissipation
(Single Pulse < 10 sec.)
PDsingle
(Notes 2 & 3)
Junction and Storage
Temperature Range
TJ, Tstg
Max
Unit
625
5.0
mW
mW/°C
200
1.0
8.0
120
80
August, 2013 − Rev. 5
G4 MG
G
°C/W
1
W
mW/°C
°C/W
°C/W
W
1.75
−55 to
+150
G4
= Specific Device Code
M
= Date Code
G
= Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Package
Shipping†
MBT35200MT1G
TSOP−6
(Pb−Free)
3,000 /
Tape & Reel
SMBT35200MT1G
TSOP−6
(Pb−Free)
3,000 /
Tape & Reel
Device
°C
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. FR−4 @ Minimum Pad
2. FR−4 @ 1.0 X 1.0 inch Pad
3. ref: Figure 9
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2013
MARKING DIAGRAM
1
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Publication Order Number:
MBT35200MT1/D
MBT35200MT1
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typical
Max
−35
−45
−
−55
−65
−
−5.0
−7.0
−
−
−0.03
−0.1
−
−0.03
−0.1
−
−0.01
−0.1
100
100
100
200
200
200
−
400
−
−
−
−
−0.125
−0.175
−0.260
−0.15
−0.20
−0.31
−
−0.68
−0.85
−
−0.81
−0.875
100
−
−
Unit
OFF CHARACTERISTICS
Collector −Emitter Breakdown Voltage
(IC = −10 mAdc, IB = 0)
V(BR)CEO
Collector −Base Breakdown Voltage
(IC = −0.1 mAdc, IE = 0)
V(BR)CBO
Emitter −Base Breakdown Voltage
(IE = −0.1 mAdc, IC = 0)
V(BR)EBO
Collector Cutoff Current
(VCB = −35 Vdc, IE = 0)
ICBO
Collector−Emitter Cutoff Current
(VCES = −35 Vdc)
ICES
Emitter Cutoff Current
(VEB = −4.0 Vdc)
IEBO
Vdc
Vdc
Vdc
mAdc
mAdc
mAdc
ON CHARACTERISTICS
DC Current Gain (Note 1)
(IC = −1.0 A, VCE = −1.5 V)
(IC = −1.5 A, VCE = −1.5 V)
(IC = −2.0 A, VCE = −3.0 V)
hFE
Collector −Emitter Saturation Voltage (Note 1)
(IC = −0.8 A, IB = −0.008 A)
(IC = −1.2 A, IB = −0.012 A)
(IC = −2.0 A, IB = −0.02 A)
VCE(sat)
Base −Emitter Saturation Voltage (Note 1)
(IC = −1.2 A, IB = −0.012 A)
VBE(sat)
Base −Emitter Turn−on Voltage (Note 1)
(IC = −2.0 A, VCE = −3.0 V)
VBE(on)
V
V
V
Cutoff Frequency
(IC = −100 mA, VCE = −5.0 V, f = 100 MHz)
fT
Input Capacitance (VEB = −0.5 V, f = 1.0 MHz)
Cibo
−
600
650
pF
Output Capacitance (VCB = −3.0 V, f = 1.0 MHz)
Cobo
−
85
100
pF
Turn−on Time (VCC = −10 V, IB1 = −100 mA, IC = −1 A, RL = 3 W)
ton
−
35
−
nS
Turn−off Time (VCC = −10 V, IB1 = IB2 = −100 mA, IC = 1 A, RL = 3 W)
toff
−
225
−
nS
1. Pulsed Condition: Pulse Width = 300 msec, Duty Cycle ≤ 2%
http://onsemi.com
2
MHz
0.1
VCE(sat) , COLLECTOR EMITTER SATURATION
VOLTAGE (VOLTS)
VCE(sat) , COLLECTOR EMITTER SATURATION
VOLTAGE (VOLTS)
MBT35200MT1
IC/IB = 100
50
10
0.01
0.001
0.001
0.01
0.1
100°C
0.15
25°C
0.10
-55°C
0.05
0
0.01
0.1
1.0
IC, COLLECTOR CURRENT (AMPS)
IC, COLLECTOR CURRENT (AMPS)
Figure 1. Collector Emitter Saturation Voltage
versus Collector Current
Figure 2. Collector Emitter Saturation Voltage
versus Collector Current
1.0
100°C
VBE(sat) , BASE EMITTER SATURATION
VOLTAGE (VOLTS)
hFE , DC CURRENT GAIN (NORMALIZED)
0.20
0.001
1.4
1.2
25°C
1.0
0.8
-55°C
0.4
0.2
0
-55°C
0.8
25°C
0.6
100°C
0.4
0.2
0
0.001
0.01
0.1
0.001
1.0
0.01
0.1
1.0
IC, COLLECTOR CURRENT (AMPS)
IC, COLLECTOR CURRENT (AMPS)
Figure 3. DC Current Gain versus
Collector Current
Figure 4. Base Emitter Saturation Voltage
versus Collector Current
1.1
750
1.0
700
0.9
C ibo , INPUT CAPACITANCE (pF)
V BE(on) , BASE EMITTER TURN-ON VOLTAGE (VOLTS)
IC/IB = 50
1.0
1.6
0.6
0.25
-55°C
0.8
25°C
0.7
0.6
100°C
0.5
0.4
650
600
550
500
450
400
350
300
0.3
0.001
0.01
0.1
0
1.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
IC, COLLECTOR CURRENT (AMPS)
VEB, EMITTER BASE VOLTAGE (VOLTS)
Figure 5. Base Emitter Turn−On Voltage
versus Collector Current
Figure 6. Input Capacitance
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3
4.5
5.0
MBT35200MT1
10
200
IC , COLLECTOR CURRENT (AMPS)
Cobo, OUTPUT CAPACITANCE (pF)
225
175
150
125
100
75
50
1 s 100 ms 10 ms
DC
0.1
SINGLE PULSE AT Tamb = 25°C
0.01
0
5.0
0
r(t), NORMALIZED TRANSIENT THERMAL
RESISTANCE
100 ms
1.0
25
1.0
1 ms
VCB, COLLECTOR BASE VOLTAGE (VOLTS)
1.0
10
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
Figure 7. Output Capacitance
Figure 8. Safe Operating Area
10
15
20
25
30
0.1
35
100
D = 0.5
0.2
0.1
0.1
0.05
0.02
0.01
0.01
SINGLE PULSE
0.001
0.00001
0.0001
0.001
0.01
0.1
t, TIME (sec)
1.0
Figure 9. Normalized Thermal Response
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4
10
100
1000
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
TSOP−6
CASE 318G−02
ISSUE V
1
SCALE 2:1
D
H
ÉÉ
ÉÉ
6
E1
1
NOTE 5
5
2
L2
4
GAUGE
PLANE
E
3
L
b
SEATING
PLANE
C
DETAIL Z
e
DIM
A
A1
b
c
D
E
E1
e
L
L2
M
c
A
0.05
M
DATE 12 JUN 2012
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH. MINIMUM
LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL.
4. DIMENSIONS D AND E1 DO NOT INCLUDE MOLD FLASH,
PROTRUSIONS, OR GATE BURRS. MOLD FLASH, PROTRUSIONS, OR
GATE BURRS SHALL NOT EXCEED 0.15 PER SIDE. DIMENSIONS D
AND E1 ARE DETERMINED AT DATUM H.
5. PIN ONE INDICATOR MUST BE LOCATED IN THE INDICATED ZONE.
A1
DETAIL Z
MIN
0.90
0.01
0.25
0.10
2.90
2.50
1.30
0.85
0.20
0°
MILLIMETERS
NOM
MAX
1.00
1.10
0.06
0.10
0.38
0.50
0.18
0.26
3.00
3.10
2.75
3.00
1.50
1.70
0.95
1.05
0.40
0.60
0.25 BSC
10°
−
STYLE 1:
PIN 1. DRAIN
2. DRAIN
3. GATE
4. SOURCE
5. DRAIN
6. DRAIN
STYLE 2:
PIN 1. EMITTER 2
2. BASE 1
3. COLLECTOR 1
4. EMITTER 1
5. BASE 2
6. COLLECTOR 2
STYLE 3:
PIN 1. ENABLE
2. N/C
3. R BOOST
4. Vz
5. V in
6. V out
STYLE 4:
PIN 1. N/C
2. V in
3. NOT USED
4. GROUND
5. ENABLE
6. LOAD
STYLE 5:
PIN 1. EMITTER 2
2. BASE 2
3. COLLECTOR 1
4. EMITTER 1
5. BASE 1
6. COLLECTOR 2
STYLE 6:
PIN 1. COLLECTOR
2. COLLECTOR
3. BASE
4. EMITTER
5. COLLECTOR
6. COLLECTOR
STYLE 7:
PIN 1. COLLECTOR
2. COLLECTOR
3. BASE
4. N/C
5. COLLECTOR
6. EMITTER
STYLE 8:
PIN 1. Vbus
2. D(in)
3. D(in)+
4. D(out)+
5. D(out)
6. GND
STYLE 9:
PIN 1. LOW VOLTAGE GATE
2. DRAIN
3. SOURCE
4. DRAIN
5. DRAIN
6. HIGH VOLTAGE GATE
STYLE 10:
PIN 1. D(OUT)+
2. GND
3. D(OUT)−
4. D(IN)−
5. VBUS
6. D(IN)+
STYLE 11:
PIN 1. SOURCE 1
2. DRAIN 2
3. DRAIN 2
4. SOURCE 2
5. GATE 1
6. DRAIN 1/GATE 2
STYLE 12:
PIN 1. I/O
2. GROUND
3. I/O
4. I/O
5. VCC
6. I/O
STYLE 13:
PIN 1. GATE 1
2. SOURCE 2
3. GATE 2
4. DRAIN 2
5. SOURCE 1
6. DRAIN 1
STYLE 14:
PIN 1. ANODE
2. SOURCE
3. GATE
4. CATHODE/DRAIN
5. CATHODE/DRAIN
6. CATHODE/DRAIN
STYLE 15:
PIN 1. ANODE
2. SOURCE
3. GATE
4. DRAIN
5. N/C
6. CATHODE
STYLE 16:
PIN 1. ANODE/CATHODE
2. BASE
3. EMITTER
4. COLLECTOR
5. ANODE
6. CATHODE
STYLE 17:
PIN 1. EMITTER
2. BASE
3. ANODE/CATHODE
4. ANODE
5. CATHODE
6. COLLECTOR
GENERIC
MARKING DIAGRAM*
RECOMMENDED
SOLDERING FOOTPRINT*
6X
0.60
XXXAYWG
G
1
6X
3.20
XXX
A
Y
W
G
0.95
PITCH
DIMENSIONS: MILLIMETERS
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
DOCUMENT NUMBER:
DESCRIPTION:
98ASB14888C
TSOP−6
1
IC
0.95
XXX MG
G
= Specific Device Code
=Assembly Location
= Year
= Work Week
= Pb−Free Package
STANDARD
XXX = Specific Device Code
M
= Date Code
G
= Pb−Free Package
*This information is generic. Please refer to device data sheet
for actual part marking. Pb−Free indicator, “G” or microdot “
G”, may or may not be present.
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
PAGE 1 OF 1
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