DATA SHEET
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Quad Analog Switch/
Quad Multiplexer
MC14016B
SOIC−14
D SUFFIX
CASE 751A
The MC14016B quad bilateral switch is constructed with MOS
P−channel and N−channel enhancement mode devices in a single
monolithic structure. Each MC14016B consists of four independent
switches capable of controlling either digital or analog signals.
The quad bilateral switch is used in signal gating, chopper, modulator,
demodulator and CMOS logic implementation.
MARKING DIAGRAM
14
Features
•
•
•
•
•
•
•
•
•
Diode Protection on All Inputs
Supply Voltage Range = 3.0 Vdc to 18 Vdc
Linearized Transfer Characteristics
Low Noise − 12 nV/√Cycle, f ≥ 1.0 kHz typical
Pin−for−Pin Replacements for CD4016B, CD4066B (Note Improved
Transfer Characteristic Design Causes More Parasitic Coupling
Capacitance than CD4016)
For Lower RON, Use The HC4016 High−Speed CMOS Device or
The MC14066B
This Device Has Inputs and Outputs Which Do Not Have ESD
Protection. Antistatic Precautions Must Be Taken
NLV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q100
Qualified and PPAP Capable*
These Devices are Pb−Free and are RoHS Compliant
MAXIMUM RATINGS (Voltages Referenced to VSS)
Symbol
VDD
Parameter
DC Supply Voltage Range
Value
Unit
−0.5 to +18.0
V
Vin, Vout
Input or Output Voltage Range
(DC or Transient)
−0.5 to VDD + 0.5
V
Iin
Input Current (DC or Transient)
per Control Pin
±10
mA
ISW
Switch Through Current
±25
mA
PD
Power Dissipation, per Package
(Note 1)
500
mW
TA
Ambient Temperature Range
−55 to +125
°C
Tstg
Storage Temperature Range
−65 to +150
°C
TL
Lead Temperature
(8−Second Soldering)
260
°C
14016BG
AWLYWW
1
A
WL
Y
WW
G
= Assembly Location
= Wafer Lot
= Year
= Work Week
= Pb−Free Indicator
ORDERING INFORMATION
Package
Shipping†
MC14016BDG
SOIC−14
(Pb−Free)
55
Units / Tube
MC14016BDR2G
SOIC−14
(Pb−Free)
2500 /
Tape & Reel
NLV14016BDR2G*
SOIC−14
(Pb−Free)
2500 /
Tape & Reel
Device
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. Temperature Derating: “D/DW” Packages: –7.0 mW/_C From 65_C To 125_C
This device contains protection circuitry to guard against damage due to high
static voltages or electric fields. However, precautions must be taken to avoid
applications of any voltage higher than maximum rated voltages to this
high−impedance circuit. For proper operation, Vin and Vout should be constrained
to the range VSS ≤ (Vin or Vout) ≤ VDD.
Unused inputs must always be tied to an appropriate logic voltage level
(e.g., either VSS or VDD). Unused outputs must be left open.
© Semiconductor Components Industries, LLC, 2014
October, 2022 − Rev. 12
1
Publication Order Number:
MC14016B/D
MC14016B
BLOCK DIAGRAM
PIN ASSIGNMENT
IN 1
1
14
VDD
OUT 1
2
13
CONTROL 1
OUT 2
3
12
CONTROL 4
IN 2
4
11
IN 4
CONTROL 2
5
10
OUT 4
CONTROL 3
6
9
OUT 3
VSS
7
8
IN 3
CONTROL 1
IN 1
CONTROL 2
IN 2
CONTROL 3
IN 3
CONTROL 4
IN 4
LOGIC DIAGRAM
(1/4 OF DEVICE SHOWN)
13
2
OUT 1
1
5
3
OUT 2
4
6
9
OUT 3
8
12
10
OUT 4
11
VDD = PIN 14
VSS = PIN 7
OUT
CONTROL
Control
LOGIC DIAGRAM RESTRICTIONS
VSS ≤ Vin ≤ VDD
VSS ≤ Vout ≤ VDD
IN
0 = VSS
Off
1 = VDD
On
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2
Switch
MC14016B
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ELECTRICAL CHARACTERISTICS (Voltages Referenced to VSS)
−55_C
Characteristic
Input Voltage
Control Input
VDD
Vdc
Min
Max
Min
VIL
5.0
10
15
−
−
−
−
−
−
−
−
−
1.5
1.5
1.5
0.9
0.9
0.9
−
−
−
−
−
−
Vdc
VIH
5.0
10
15
−
−
−
−
−
−
3.0
8.0
13
2.0
6.0
11
−
−
−
−
−
−
−
−
−
Vdc
15
−
±0.1
−
±0.00001
±0.1
−
±1.0
mAdc
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
5.0
5.0
5.0
0.2
−
−
−
−
−
−
−
−
−
−
−
−
5.0
10
15
−
−
−
0.25
0.5
1.0
−
−
−
0.0005
0.0010
0.0015
0.25
0.5
1.0
−
−
−
7.5
15
30
Figure
Symbol
1
−
Iin
Input Capacitance
Control
Switch Input
Switch Output
Feed Through
−
Cin
“ON” Resistance
(VC = VDD, RL = 10 kW)
2,3
IDD
4,5,6
RON
(Vin = +10 Vdc)
(Vin = +0.25 Vdc) VSS = 0 Vdc
(Vin = +5.6 Vdc)
(Vin = +15 Vdc)
(Vin = +0.25 Vdc) VSS = 0 Vdc
(Vin = +9.3 Vdc)
D “ON” Resistance
Between any 2 circuits in a common
package
(VC = VDD)
(Vin = +5.0 Vdc, VSS = −5.0 Vdc)
(Vin = +7.5 Vdc, VSS = −7.5 Vdc)
−
Input/Output Leakage Current
(VC = VSS)
(Vin = +7.5, Vout = −7.5 Vdc)
(Vin = −7.5, Vout = +7.5 Vdc)
−
125_C
Typ
(Note 2)
Input Current Control
Quiescent Current
(Per Package) (Note 3)
25_C
Max
Min
Max
Unit
pF
mAdc
W
10
−
−
−
600
600
600
−
−
−
260
310
310
660
660
660
−
−
−
840
840
840
15
−
−
−
360
360
360
−
−
−
260
260
300
400
400
400
−
−
−
520
520
520
DRON
W
−
−
5.0
7.5
−
−
−
−
15
10
−
−
−
−
−
−
−
mAdc
7.5
7.5
−
−
±0.1
±0.1
−
−
±0.0015
±0.0015
±0.1
± 0.1
−
−
±1.0
±1.0
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
NOTE: All unused inputs must be returned to VDD or VSS as appropriate for the circuit application.
2. Data labelled “Typ” is not to be used for design purposes but is intended as an indication of the IC’s potential performance.
3. For voltage drops across the switch (DVswitch) > 600 mV ( > 300 mV at high temperature), excessive VDD current may be drawn; i.e., the
current out of the switch may contain both VDD and switch input components. The reliability of the device will be unaffected unless the
Maximum Ratings are exceeded. (See first page of this data sheet.) Reference Figure 14.
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3
MC14016B
ELECTRICAL CHARACTERISTICS (Note 4) (CL = 50 pF, TA = 25_C)
VDD
Vdc
Min
Typ
(Note 5)
Max
Unit
5.0
10
15
−
−
−
15
7.0
6.0
45
20
15
ns
5.0
10
15
−
−
−
34
20
15
120
110
100
−
5.0
10
15
−
−
−
30
50
100
−
−
−
mV
−
−
5.0
−
– 80
−
dB
10,11
−
5.0
10
15
−
−
−
24
25
30
−
−
−
nV/√Cycle
5.0
10
15
−
−
−
12
12
15
−
−
−
−
0.16
−
Figure
Symbol
Propagation Delay Time (VSS = 0 Vdc)
Vin to Vout
(VC = VDD, RL = 10 kW)
7
tPLH,
tPHL
Control to Output
(Vin ≤ 10 Vdc, RL = 10 kW)
8
tPHZ,
tPLZ,
tPZH,
tPZL
Crosstalk, Control to Output (VSS = 0 Vdc)
(VC = VDD, Rin = 10 kW, Rout = 10 kW,
f = 1.0 kHz)
9
Crosstalk between any two switches (VSS = 0 Vdc)
(RL = 1.0 kW, f = 1.0 MHz,
V
crosstalk + 20 log10 out1)
Vout2
Characteristic
Noise Voltage (VSS = 0 Vdc)
(VC = VDD, f = 100 Hz)
(VC = VDD, f = 100 kHz)
ns
Second Harmonic Distortion (VSS = – 5.0 Vdc)
(Vin = 1.77 Vdc, RMS Centered @ 0.0 Vdc,
RL = 10 kW, f = 1.0 kHz)
−
−
5.0
Insertion Loss (VC = VDD, Vin = 1.77 Vdc,
VSS = −5.0 Vdc, RMS centered = 0.0 Vdc, f = 1.0 MHz)
V
Iloss + 20 log10 out)
Vin
(RL = 1.0 kW)
(RL = 10 kW)
(RL = 100 kW)
(RL = 1.0 MW)
12
−
5.0
Bandwidth (−3.0 dB)
(VC = VDD, Vin = 1.77 Vdc, VSS = −5.0 Vdc,
RMS centered @ 0.0 Vdc)
(RL = 1.0 kW)
(RL = 10 kW)
(RL = 100 kW)
(RL = 1.0 MW)
OFF Channel Feedthrough Attenuation
(VSS = −5.0 Vdc)
Vout
+ –50 dB)
(VC = VSS, 20 log10
Vin
(RL = 1.0 kW)
(RL = 10 kW)
(RL = 100 kW)
(RL = 1.0 MW)
dB
−
−
−
−
12,13
BW
−
2.3
0.2
0.1
0.05
−
−
−
−
5.0
MHz
−
−
−
−
−
54
40
38
37
−
−
−
−
5.0
kHz
−
−
−
−
1250
140
18
2.0
−
−
−
−
4. The formulas given are for typical characteristics only at 25_C.
5. Data labelled “Typ” is not to be used for design purposes but is intended as an indication of the IC’s potential performance.
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4
%
MC14016B
VC
IS
Vin
Vout
VIL: VC is raised from VSS until VC = VIL.
VIL: at VC = VIL: IS = ±10 mA with Vin = VSS, Vout = VDD or Vin = VDD, Vout = VSS.
VIH: When VC = VIH to VDD, the switch is ON and the RON specifications are met.
Figure 1. Input Voltage Test Circuit
10,000
VDD
ID
PULSE
GENERATOR
TO ALL
4 CIRCUITS
VDD
Vout
10 k
CONTROL
INPUT
fc
VSS
PD , POWER DISSIPATION (μW)
VDD = 15 Vdc
Vin
TA = 25°C
Figure 2. Quiescent Power Dissipation
Test Circuit
5.0 Vdc
1000
100
10
1.0
5.0k 10k
PD = VDD x ID
100k
1.0M
fc, FREQUENCY (Hz)
R ON, “ON” RESISTANCE (OHMS)
700
VSS = 0 Vdc
RL = 10 kW
TA = 25°C
600
500
VC = VDD = 10 Vdc
300
200
VC = VDD = 15 Vdc
100
0
0
2.0
10M
50M
Figure 3. Typical Power Dissipation per Circuit
(1/4 of device shown)
TYPICAL RON VERSUS INPUT VOLTAGE
400
10 Vdc
6.0
10
14
Vin, INPUT VOLTAGE (Vdc)
Figure 4. VSS = 0 V
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5
18
20
MC14016B
Vout
RL
CL
Vin
Vout
20 ns
RL
20 ns
90%
50%
Vin
VC
tPLH
tPHL
Figure 5. RON Characteristics
Test Circuit
VSS
50%
Vout
Vin
VDD
10%
Figure 6. Propagation Delay Test Circuit
and Waveforms
Vout
VC
RL
CL
VX
Vin
20 ns
50%
VC
tPZH
Vout
VDD
90%
10%
tPHZ
90%
10%
tPZL
10 k
VC
VSS
Vin = VDD
Vx = VSS
15 pF
Vin
tPLZ
1k
90%
Vout
Vout
10%
Vin = VSS
Vx = VDD
Figure 7. Turn−On Delay Time Test Circuit
and Waveforms
Figure 8. Crosstalk Test Circuit
35
OUT
VC = VDD
IN
NOISE VOLTAGE (nV/ CYCLE)
30
QUAN-TECH
MODEL
2283
OR EQUIV
VDD = 15 Vdc
25
10 Vdc
20
5.0 Vdc
15
10
5.0
0
10
Figure 9. Noise Voltage Test Circuit
100
1.0k
f, FREQUENCY (Hz)
10 k
Figure 10. Typical Noise Characteristics
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6
100 k
MC14016B
2.0
TYPICAL INSERTION LOSS (dB)
RL = 1 MW AND 100 kW
0
10 kW
- 2.0
- 4.0
1.0
kW- 3.0 dB (R = 1.0 MW )
L
- 6.0
- 3.0 dB (RL = 10 kW )
- 3.0 dB (RL = 1.0 kW )
- 8.0
- 10
- 12
10 k
100 k
1.0M
10 M
fin, INPUT FREQUENCY (Hz)
100 M
Figure 11. Typical Insertion Loss/Bandwidth
Characteristics
Vout
RL
VC
+ 2.5 Vdc
0.0 Vdc
- 2.5 Vdc
Vin
Figure 12. Frequency Response Test Circuit
ON SWITCH
CONTROL
SECTION
OF IC
LOAD
V
SOURCE
Figure 13. DV Across Switch
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7
MC14016B
APPLICATIONS INFORMATION
Figure A illustrates use of the Analog Switch. The 0−to−5 V
Digital Control signal is used to directly control a 5 Vp−p
analog signal.
The digital control logic levels are determined by VDD
and VSS. The VDD voltage is the logic high voltage; the VSS
voltage is logic low. For the example, VDD = +5 V logic high
at the control inputs; VSS = GND = 0 V logic low.
The maximum analog signal level is determined by VDD
and VSS. The analog voltage must not swing higher than
VDD or lower than VSS.
The example shows a 5 Vp−p signal which allows no
margin at either peak. If voltage transients above VDD
and/or below VSS are anticipated on the analog channels,
external diodes (Dx) are recommended as shown in Figure
B. These diodes should be small signal types able to absorb
the maximum anticipated current surges during clipping.
The absolute maximum potential difference between
VDD and VSS is 18.0 V. Most parameters are specified up to
15 V which is the recommended maximum difference
between VDD and VSS.
+5 V
VSS
VDD
+5 V
5 Vp-p
ANALOG SIGNAL
EXTERNAL
CMOS
DIGITAL
CIRCUITRY
+ 5.0 V
SWITCH
IN
SWITCH
OUT
5 Vp-p
+ 2.5 V
ANALOG SIGNAL
0-TO-5 V DIGITAL
GND
CONTROL SIGNALS
MC14016B
Figure A. Application Example
VDD
VDD
Dx
Dx
SWITCH
IN
SWITCH
OUT
Dx
Dx
VSS
VSS
Figure B. External Germanium or Schottky Clipping Diodes
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8
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
SOIC−14 NB
CASE 751A−03
ISSUE L
14
1
SCALE 1:1
D
DATE 03 FEB 2016
A
B
14
8
A3
E
H
L
1
0.25
B
M
DETAIL A
7
13X
M
b
0.25
M
C A
S
B
S
0.10
X 45 _
M
A1
e
DETAIL A
h
A
C
SEATING
PLANE
DIM
A
A1
A3
b
D
E
e
H
h
L
M
MILLIMETERS
MIN
MAX
1.35
1.75
0.10
0.25
0.19
0.25
0.35
0.49
8.55
8.75
3.80
4.00
1.27 BSC
5.80
6.20
0.25
0.50
0.40
1.25
0_
7_
INCHES
MIN
MAX
0.054 0.068
0.004 0.010
0.008 0.010
0.014 0.019
0.337 0.344
0.150 0.157
0.050 BSC
0.228 0.244
0.010 0.019
0.016 0.049
0_
7_
GENERIC
MARKING DIAGRAM*
SOLDERING FOOTPRINT*
6.50
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. DIMENSION b DOES NOT INCLUDE DAMBAR
PROTRUSION. ALLOWABLE PROTRUSION
SHALL BE 0.13 TOTAL IN EXCESS OF AT
MAXIMUM MATERIAL CONDITION.
4. DIMENSIONS D AND E DO NOT INCLUDE
MOLD PROTRUSIONS.
5. MAXIMUM MOLD PROTRUSION 0.15 PER
SIDE.
14
14X
1.18
XXXXXXXXXG
AWLYWW
1
1
1.27
PITCH
XXXXX
A
WL
Y
WW
G
= Specific Device Code
= Assembly Location
= Wafer Lot
= Year
= Work Week
= Pb−Free Package
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “G”, may
or may not be present. Some products may
not follow the Generic Marking.
14X
0.58
DIMENSIONS: MILLIMETERS
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
STYLES ON PAGE 2
DOCUMENT NUMBER:
DESCRIPTION:
98ASB42565B
SOIC−14 NB
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
PAGE 1 OF 2
onsemi and
are trademarks of Semiconductor Components Industries, LLC dba onsemi or its subsidiaries in the United States and/or other countries. onsemi reserves
the right to make changes without further notice to any products herein. onsemi makes no warranty, representation or guarantee regarding the suitability of its products for any particular
purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation
special, consequential or incidental damages. onsemi does not convey any license under its patent rights nor the rights of others.
© Semiconductor Components Industries, LLC, 2019
www.onsemi.com
SOIC−14
CASE 751A−03
ISSUE L
DATE 03 FEB 2016
STYLE 1:
PIN 1. COMMON CATHODE
2. ANODE/CATHODE
3. ANODE/CATHODE
4. NO CONNECTION
5. ANODE/CATHODE
6. NO CONNECTION
7. ANODE/CATHODE
8. ANODE/CATHODE
9. ANODE/CATHODE
10. NO CONNECTION
11. ANODE/CATHODE
12. ANODE/CATHODE
13. NO CONNECTION
14. COMMON ANODE
STYLE 2:
CANCELLED
STYLE 3:
PIN 1. NO CONNECTION
2. ANODE
3. ANODE
4. NO CONNECTION
5. ANODE
6. NO CONNECTION
7. ANODE
8. ANODE
9. ANODE
10. NO CONNECTION
11. ANODE
12. ANODE
13. NO CONNECTION
14. COMMON CATHODE
STYLE 4:
PIN 1. NO CONNECTION
2. CATHODE
3. CATHODE
4. NO CONNECTION
5. CATHODE
6. NO CONNECTION
7. CATHODE
8. CATHODE
9. CATHODE
10. NO CONNECTION
11. CATHODE
12. CATHODE
13. NO CONNECTION
14. COMMON ANODE
STYLE 5:
PIN 1. COMMON CATHODE
2. ANODE/CATHODE
3. ANODE/CATHODE
4. ANODE/CATHODE
5. ANODE/CATHODE
6. NO CONNECTION
7. COMMON ANODE
8. COMMON CATHODE
9. ANODE/CATHODE
10. ANODE/CATHODE
11. ANODE/CATHODE
12. ANODE/CATHODE
13. NO CONNECTION
14. COMMON ANODE
STYLE 6:
PIN 1. CATHODE
2. CATHODE
3. CATHODE
4. CATHODE
5. CATHODE
6. CATHODE
7. CATHODE
8. ANODE
9. ANODE
10. ANODE
11. ANODE
12. ANODE
13. ANODE
14. ANODE
STYLE 7:
PIN 1. ANODE/CATHODE
2. COMMON ANODE
3. COMMON CATHODE
4. ANODE/CATHODE
5. ANODE/CATHODE
6. ANODE/CATHODE
7. ANODE/CATHODE
8. ANODE/CATHODE
9. ANODE/CATHODE
10. ANODE/CATHODE
11. COMMON CATHODE
12. COMMON ANODE
13. ANODE/CATHODE
14. ANODE/CATHODE
STYLE 8:
PIN 1. COMMON CATHODE
2. ANODE/CATHODE
3. ANODE/CATHODE
4. NO CONNECTION
5. ANODE/CATHODE
6. ANODE/CATHODE
7. COMMON ANODE
8. COMMON ANODE
9. ANODE/CATHODE
10. ANODE/CATHODE
11. NO CONNECTION
12. ANODE/CATHODE
13. ANODE/CATHODE
14. COMMON CATHODE
DOCUMENT NUMBER:
DESCRIPTION:
98ASB42565B
SOIC−14 NB
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
PAGE 2 OF 2
onsemi and
are trademarks of Semiconductor Components Industries, LLC dba onsemi or its subsidiaries in the United States and/or other countries. onsemi reserves
the right to make changes without further notice to any products herein. onsemi makes no warranty, representation or guarantee regarding the suitability of its products for any particular
purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation
special, consequential or incidental damages. onsemi does not convey any license under its patent rights nor the rights of others.
© Semiconductor Components Industries, LLC, 2019
www.onsemi.com
onsemi,
, and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates
and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property.
A listing of onsemi’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. onsemi reserves the right to make changes at any time to any
products or information herein, without notice. The information herein is provided “as−is” and onsemi makes no warranty, representation or guarantee regarding the accuracy of the
information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use
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