MC14070BFELG

MC14070B, MC14077B CMOS SSI Quad Exclusive “OR” and “NOR” Gates The MC14070B quad exclusive OR gate and the MC14077B quad exclusive NOR gate are constructed with MOS P−channel and N−channel enhancement mode devices in a single monolithic structure. These complementary MOS logic gates find primary use where low power dissipation and/or high noise immunity is desired. http://onsemi.com Features • Supply Voltage Range = 3.0 Vdc to 18 Vdc • All Outputs Buffered • Capable of Driving Two Low−Power TTL Loads or One • • • • • SOIC−14 D SUFFIX CASE 751A Low−Power Schottky TTL Load Over the Rated Temperature Range Double Diode Protection on All Inputs MC14070B − Replacement for CD4030B and CD4070B Types MC14077B − Replacement for CD4077B Type NLV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q100 Qualified and PPAP Capable These Devices are Pb−Free and are RoHS Compliant PIN ASSIGNMENT IN 1A 1 14 VDD IN 2A 2 13 IN 2D OUTA 3 12 IN 1D OUTB 4 11 OUTD IN 1B 5 10 OUTC IN 2B 6 9 IN 2C VSS 7 8 IN 1C MAXIMUM RATINGS (Voltages Referenced to VSS) Value Unit −0.5 to +18.0 V −0.5 to VDD + 0.5 V Input or Output Current (DC or Transient) per Pin ±10 mA PD Power Dissipation, per Package (Note 1) 500 mW TA Ambient Temperature Range −55 to +125 °C Tstg Storage Temperature Range −65 to +150 °C TL Lead Temperature (8−Second Soldering) 260 °C Symbol VDD Vin, Vout Iin, Iout Parameter DC Supply Voltage Range Input or Output Voltage Range (DC or Transient) MARKING DIAGRAM 14 140xxBG AWLYWW 1 Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Temperature Derating: “D/DW” Packages: –7.0 mW/_C From 65_C To 125_C xx A WL, L YY, Y WW, W G = Specific Device Code = Assembly Location = Wafer Lot = Year = Work Week = Pb−Free Package ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 4 of this data sheet. This device contains protection circuitry to guard against damage due to high static voltages or electric fields. However, precautions must be taken to avoid applications of any voltage higher than maximum rated voltages to this high−impedance circuit. For proper operation, Vin and Vout should be constrained to the range VSS ≤ (Vin or Vout) ≤ VDD. Unused inputs must always be tied to an appropriate logic voltage level (e.g., either VSS or VDD). Unused outputs must be left open. © Semiconductor Components Industries, LLC, 2014 August, 2014 − Rev. 10 1 Publication Order Number: MC14070B/D MC14070B, MC14077B MC14070B QUAD Exclusive OR Gate MC14077B QUAD Exclusive NOR Gate 1 1 3 3 2 5 2 5 4 4 6 8 6 8 10 9 12 10 9 12 11 11 13 13 VDD = PIN 14 VSS = PIN 7 (BOTH DEVICES) 20 ns 20 ns VDD Vin IDD Vin VDD 90% 50% 10% VSS 1/f 50% DUTY CYCLE * CL *Inverted output on MC14077B only. Figure 1. Power Dissipation Test Circuit and Waveform PULSE GENERATOR INPUT * # VSS 20 ns 20 ns VDD tPLH tPHL CL OUTPUT 90% 50% 10% tTHL *Inverted output on MC14077B only. #Connect unused input to VDD for MC14070B, to VSS for MC14077B. Figure 2. Switching Time Test Circuit and Waveforms http://onsemi.com 2 VDD 90% 50% 10% tTLH VSS VOH VOL MC14070B, MC14077B ELECTRICAL CHARACTERISTICS (Voltages Referenced to VSS) −55_C Characteristic Output Voltage Vin = VDD or 0 Symbol 25_C VDD Vdc Min Max Min Typ (Note 2) 125_C Max Min Max Unit “0” Level VOL 5.0 10 15 − − − 0.05 0.05 0.05 − − − 0 0 0 0.05 0.05 0.05 − − − 0.05 0.05 0.05 Vdc “1” Level VOH 5.0 10 15 4.95 9.95 14.95 − − − 4.95 9.95 14.95 5.0 10 15 − − − 4.95 9.95 14.95 − − − Vdc “0” Level VIL 5.0 10 15 − − − 1.5 3.0 4.0 − − − 2.25 4.50 6.75 1.5 3.0 4.0 − − − 1.5 3.0 4.0 5.0 10 15 3.5 7.0 11 − − − 3.5 7.0 11 2.75 5.50 8.25 − − − 3.5 7.0 11 − − − 5.0 5.0 10 15 –3.0 –0.64 –1.6 –4.2 − − − − –2.4 –0.51 –1.3 –3.4 –4.2 –0.88 –2.25 –8.8 − − − − –1.7 –0.36 –0.9 –2.4 − − − − IOL 5.0 10 15 0.64 1.6 4.2 − − − 0.51 1.3 3.4 0.88 2.25 8.8 − − − 0.36 0.9 2.4 − − − mAdc Input Current Iin 15 − ±0.1 − ±0.00001 ±0.1 − ±1.0 mAdc Input Capacitance (Vin = 0) Cin − − − − 5.0 7.5 − − pF Quiescent Current (Per Package) IDD 5.0 10 15 − − − 0.25 0.5 1.0 − − − 0.0005 0.0010 0.0015 0.25 0.5 1.0 − − − 7.5 15 30 mAdc Total Supply Current (Notes 3 & 4) (Dynamic plus Quiescent, Per Package) (CL = 50 pF on all outputs, all buffers switching) IT 5.0 10 15 Output Rise and Fall Times (Note 3) (CL = 50 pF) tTLH, tTHL = (1.35 ns/pF) CL + 33 ns tTLH, tTHL = (0.60 ns/pF) CL + 20 ns tTLH, tTHL = (0.40 ns/pF) CL + 20 ns tTLH, tTHL Propagation Delay Times (Note 3) (CL = 50 pF) tPLH, tPHL = (0.90 ns/pF) CL + 130 ns tPLH, tPHL = (0.36 ns/pF) CL + 57 ns tPLH, tPHL = (0.26 ns/pF) CL + 37 ns tPLH, tPHL Vin = 0 or VDD Input Voltage (VO = 4.5 or 0.5 Vdc) (VO = 9.0 or 1.0 Vdc) (VO = 13.5 or 1.5 Vdc) “1” Level VIH (VO = 0.5 or 4.5 Vdc) (VO = 1.0 or 9.0 Vdc) (VO = 1.5 or 13.5 Vdc) Output Drive Current (VOH = 2.5 Vdc) (VOH = 4.6 Vdc) (VOH = 9.5 Vdc) (VOH = 13.5 Vdc) (VOL = 0.4 Vdc) (VOL = 0.5 Vdc) (VOL = 1.5 Vdc) Vdc Vdc IOH Source Sink mAdc IT = (0.3 mA/kHz) f + IDD IT = (0.6 mA/kHz) f + IDD IT = (0.9 mA/kHz) f + IDD mAdc ns 5.0 10 15 − − − − − − − − − 100 50 40 200 100 80 − − − − − − ns 5.0 10 15 − − − − − − − − − 175 75 55 350 150 110 − − − − − − Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 2. Data labelled “Typ” is not to be used for design purposes but is intended as an indication of the IC’s potential performance. 3. The formulas given are for the typical characteristics only at 25_C. 4. To calculate total supply current at loads other than 50 pF: IT(CL) = IT(50 pF) + (CL – 50) Vfk where: IT is in mH (per package), CL in pF, V = (VDD – VSS) in volts, f in kHz is input frequency, and k = 0.002. http://onsemi.com 3 MC14070B, MC14077B ORDERING INFORMATION Package Shipping† MC14070BDG SOIC−14 (Pb−Free) 55 Units / Rail MC14070BDR2G SOIC−14 (Pb−Free) 2500 / Tape & Reel NLV14070BDR2G* SOIC−14 (Pb−Free) 2500 / Tape & Reel MC14077BDG SOIC−14 (Pb−Free) 55 Units / Rail MC14077BDR2G SOIC−14 (Pb−Free) 2500 / Tape & Reel NLV14077BDR2G* SOIC−14 (Pb−Free) 2500 / Tape & Reel Device †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. *NLV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q100 Qualified and PPAP Capable. http://onsemi.com 4 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS SOIC−14 NB CASE 751A−03 ISSUE L 14 1 SCALE 1:1 D DATE 03 FEB 2016 A B 14 8 A3 E H L 1 0.25 B M DETAIL A 7 13X M b 0.25 M C A S B S 0.10 X 45 _ M A1 e DETAIL A h A C SEATING PLANE DIM A A1 A3 b D E e H h L M MILLIMETERS MIN MAX 1.35 1.75 0.10 0.25 0.19 0.25 0.35 0.49 8.55 8.75 3.80 4.00 1.27 BSC 5.80 6.20 0.25 0.50 0.40 1.25 0_ 7_ INCHES MIN MAX 0.054 0.068 0.004 0.010 0.008 0.010 0.014 0.019 0.337 0.344 0.150 0.157 0.050 BSC 0.228 0.244 0.010 0.019 0.016 0.049 0_ 7_ GENERIC MARKING DIAGRAM* SOLDERING FOOTPRINT* 6.50 NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. DIMENSION b DOES NOT INCLUDE DAMBAR PROTRUSION. ALLOWABLE PROTRUSION SHALL BE 0.13 TOTAL IN EXCESS OF AT MAXIMUM MATERIAL CONDITION. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD PROTRUSIONS. 5. MAXIMUM MOLD PROTRUSION 0.15 PER SIDE. 14 14X 1.18 XXXXXXXXXG AWLYWW 1 1 1.27 PITCH XXXXX A WL Y WW G = Specific Device Code = Assembly Location = Wafer Lot = Year = Work Week = Pb−Free Package *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “G”, may or may not be present. Some products may not follow the Generic Marking. 14X 0.58 DIMENSIONS: MILLIMETERS *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. STYLES ON PAGE 2 DOCUMENT NUMBER: DESCRIPTION: 98ASB42565B SOIC−14 NB Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 2 onsemi and are trademarks of Semiconductor Components Industries, LLC dba onsemi or its subsidiaries in the United States and/or other countries. onsemi reserves the right to make changes without further notice to any products herein. onsemi makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. onsemi does not convey any license under its patent rights nor the rights of others. © Semiconductor Components Industries, LLC, 2019 www.onsemi.com SOIC−14 CASE 751A−03 ISSUE L DATE 03 FEB 2016 STYLE 1: PIN 1. COMMON CATHODE 2. ANODE/CATHODE 3. ANODE/CATHODE 4. NO CONNECTION 5. ANODE/CATHODE 6. NO CONNECTION 7. ANODE/CATHODE 8. ANODE/CATHODE 9. ANODE/CATHODE 10. NO CONNECTION 11. ANODE/CATHODE 12. ANODE/CATHODE 13. NO CONNECTION 14. COMMON ANODE STYLE 2: CANCELLED STYLE 3: PIN 1. NO CONNECTION 2. ANODE 3. ANODE 4. NO CONNECTION 5. ANODE 6. NO CONNECTION 7. ANODE 8. ANODE 9. ANODE 10. NO CONNECTION 11. ANODE 12. ANODE 13. NO CONNECTION 14. COMMON CATHODE STYLE 4: PIN 1. NO CONNECTION 2. CATHODE 3. CATHODE 4. NO CONNECTION 5. CATHODE 6. NO CONNECTION 7. CATHODE 8. CATHODE 9. CATHODE 10. NO CONNECTION 11. CATHODE 12. CATHODE 13. NO CONNECTION 14. COMMON ANODE STYLE 5: PIN 1. COMMON CATHODE 2. ANODE/CATHODE 3. ANODE/CATHODE 4. ANODE/CATHODE 5. ANODE/CATHODE 6. NO CONNECTION 7. COMMON ANODE 8. COMMON CATHODE 9. ANODE/CATHODE 10. ANODE/CATHODE 11. ANODE/CATHODE 12. ANODE/CATHODE 13. NO CONNECTION 14. COMMON ANODE STYLE 6: PIN 1. CATHODE 2. CATHODE 3. CATHODE 4. CATHODE 5. CATHODE 6. CATHODE 7. CATHODE 8. ANODE 9. ANODE 10. ANODE 11. ANODE 12. ANODE 13. ANODE 14. ANODE STYLE 7: PIN 1. ANODE/CATHODE 2. COMMON ANODE 3. COMMON CATHODE 4. ANODE/CATHODE 5. ANODE/CATHODE 6. ANODE/CATHODE 7. ANODE/CATHODE 8. ANODE/CATHODE 9. ANODE/CATHODE 10. ANODE/CATHODE 11. COMMON CATHODE 12. COMMON ANODE 13. ANODE/CATHODE 14. ANODE/CATHODE STYLE 8: PIN 1. COMMON CATHODE 2. ANODE/CATHODE 3. ANODE/CATHODE 4. NO CONNECTION 5. ANODE/CATHODE 6. ANODE/CATHODE 7. COMMON ANODE 8. COMMON ANODE 9. ANODE/CATHODE 10. ANODE/CATHODE 11. NO CONNECTION 12. ANODE/CATHODE 13. ANODE/CATHODE 14. COMMON CATHODE DOCUMENT NUMBER: DESCRIPTION: 98ASB42565B SOIC−14 NB Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. 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