MC1413DR2

MC1413, MC1413B, NCV1413B High Voltage, High Current Darlington Transistor Arrays The seven NPN Darlington connected transistors in these arrays are well suited for driving lamps, relays, or printer hammers in a variety of industrial and consumer applications. Their high breakdown voltage and internal suppression diodes insure freedom from problems associated with inductive loads. Peak inrush currents to 500 mA permit them to drive incandescent lamps. The MC1413, B with a 2.7 kW series input resistor is well suited for systems utilizing a 5.0 V TTL or CMOS Logic. http://onsemi.com PDIP−16 P SUFFIX CASE 648 16 1 SOIC−16 D SUFFIX CASE 751B Features • Pb−Free Packages are Available* • NCV Prefix for Automotive and Other Applications Requiring Site 16 1 and Control Changes ORDERING INFORMATION 1/7 MC1413, B 2.7 k Device Pin 9 5.0 k 3.0 k Figure 1. Representative Schematic Diagram 16 1 Package Shipping† MC1413D SOIC−16 48 Units/Rail MC1413DG SOIC−16 (Pb−Free) 48 Units/Tube MC1413DR2 SOIC−16 2500 Tape & Reel MC1413DR2G SOIC−16 (Pb−Free) 2500 Tape & Reel MC1413P PDIP−16 25 Units/Rail MC1413PG PDIP−16 (Pb−Free) 25 Units/Rail MC1413BD SOIC−16 48 Units/Rail MC1413BDG SOIC−16 (Pb−Free) 48 Units/Rail 2 15 MC1413BDR2 SOIC−16 2500 Tape & Reel 3 14 MC1413BDR2G SOIC−16 (Pb−Free) 2500 Tape & Reel 4 13 MC1413BP PDIP−16 25 Units/Rail MC1413BPG 12 PDIP−16 (Pb−Free) 25 Units/Rail 5 6 11 NCV1413BDR2 SOIC−16 2500 Tape & Reel NCV1413BDR2G SOIC−16 (Pb−Free) 2500 Tape & Reel 10 7 †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. 9 8 (Top View) DEVICE MARKING INFORMATION Figure 2. PIN CONNECTIONS See general marking information in the device marking section on page 5 of this data sheet. *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. © Semiconductor Components Industries, LLC, 2006 July, 2006 − Rev. 8 1 Publication Order Number: MC1413/D MC1413, MC1413B, NCV1413B MAXIMUM RATINGS (TA = 25°C, and rating apply to any one device in the package, unless otherwise noted.) Symbol Value Unit Output Voltage VO 50 V Input Voltage VI 30 V Collector Current − Continuous IC 500 mA Base Current − Continuous IB 25 mA Operating Ambient Temperature Range MC1413 MC1413B NCV1413B TA Storage Temperature Range Tstg −55 to +150 °C Junction Temperature TJ 150 °C Rating °C −20 to +85 −40 to +85 −40 to +125 Thermal Resistance, Junction−to−Ambient Case 648, P Suffix Case 751B, D Suffix RqJA Thermal Resistance, Junction−to−Case Case 648, P Suffix Case 751B, D Suffix RqJC Electrostatic Discharge Sensitivity (ESD) Human Body Model (HBM) Machine Model (MM) Charged Device Model (CDM) ESD °C/W 67 100 °C/W 22 20 V 2000 400 1500 Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. http://onsemi.com 2 MC1413, MC1413B, NCV1413B ELECTRICAL CHARACTERISTICS (TA = 25°C, unless otherwise noted) Symbol Min Typ Max − − − − 100 50 − − − 1.1 0.95 0.85 1.6 1.3 1.1 − 0.93 1.35 − − − − − − 2.4 2.7 3.0 II(off) 50 100 − mA hFE 1000 − − − Input Capacitance CI − 15 30 pF Turn−On Delay Time (50% EI to 50% EO) ton − 0.25 1.0 ms Turn−Off Delay Time (50% EI to 50% EO) toff − 0.25 1.0 ms IR − − − − 50 100 mA VF − 1.5 2.0 V Characteristic Output Leakage Current (VO = 50 V, TA = +85°C) (VO = 50 V, TA = +25°C) All Types All Types Collector−Emitter Saturation Voltage (IC = 350 mA, IB = 500 mA) (IC = 200 mA, IB = 350 mA) (IC = 100 mA, IB = 250 mA) All Types All Types All Types VCE(sat) Input Current − On Condition (VI = 3.85 V) MC1413, B Input Voltage − On Condition (VCE = 2.0 V, IC = 200 mA) (VCE = 2.0 V, IC = 250 mA) (VCE = 2.0 V, IC = 300 mA) MC1413, B MC1413, B MC1413, B All Types TA = +25°C TA = +85°C Clamp Diode Forward Voltage (IF = 350 mA) NOTE: mA VI(on) DC Current Gain (VCE = 2.0 V, IC = 350 mA) Clamp Diode Leakage Current (VR = 50 V) V II(on) Input Current − Off Condition (IC = 500 mA, TA = 85°C) Unit mA ICEX V NCV1413B Tlow = −40°C, Thigh = +125°C. Guaranteed by design. NCV prefix is for automotive and other applications requiring site and change control. http://onsemi.com 3 MC1413, MC1413B, NCV1413B TYPICAL PERFORMANCE CURVES − TA = 25°C 400 I O , OUTPUT CURRENT (mA) 300 MC1413, B 200 100 0 0 1.0 2.0 3.0 4.0 5.0 8.0 9.0 10 11 All Types 200 100 0 12 0 50 100 150 200 250 300 350 VI, INPUT VOLTAGE (V) II, INPUT CURRENT (mA) Figure 3. Output Current versus Input Voltage Figure 4. Output Current versus Input Current 800 400 2.5 700 600 I I, INPUT CURRENT (mA) PIN 13 PIN 10 1 Output Conducting at a Time 500 PIN 16 400 300 200 2.0 Maximum 1.5 Typical 1.0 0.5 All Types 100 0 0 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.0 0 2.0 3.0 4.0 5.0 6.0 7.0 VCE(sat), SATURATION VOLTAGE (V) VI, INPUT VOLTAGE (V) Figure 5. Typical Output Characteristics Figure 6. Input Characteristics − MC1413, B 1000 I C, COLLECTOR CURRENT (mA) IC , COLLECTOR CURRENT (mA) 300 1 700 2 500 3 300 4 5 200 6 7 100 10 20 30 50 70 % DUTY CYCLE Figure 7. Maximum Collector Current versus Duty Cycle (and Number of Drivers in Use) http://onsemi.com 4 100 NUMBER OF DRIVERS USED I O , OUTPUT CURRENT (mA) 400 8.0 MC1413, MC1413B, NCV1413B MARKING DIAGRAMS PDIP−16 P SUFFIX CASE 648 16 16 MC1413P ULN2003A AWLYYWWG MC1413BP ULQ2003A AWLYYWWG 1 1 SOIC−16 D SUFFIX CASE 751B 16 16 MC1413DG AWLYWW 1 16 MC1413BDG AWLYWW 1 A WL YY, Y WW G NCV1413BDG AWLYWW 1 = Assembly Location = Wafer Lot = Year = Work Week = Pb−Free Package http://onsemi.com 5 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS PDIP−16 CASE 648−08 ISSUE V 16 1 SCALE 1:1 D A 16 9 E H E1 1 NOTE 8 b2 8 c B TOP VIEW END VIEW WITH LEADS CONSTRAINED NOTE 5 A2 A e/2 NOTE 3 L A1 C D1 e SEATING PLANE M eB END VIEW 16X b SIDE VIEW 0.010 M C A M B M NOTE 6 DATE 22 APR 2015 NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: INCHES. 3. DIMENSIONS A, A1 AND L ARE MEASURED WITH THE PACKAGE SEATED IN JEDEC SEATING PLANE GAUGE GS−3. 4. DIMENSIONS D, D1 AND E1 DO NOT INCLUDE MOLD FLASH OR PROTRUSIONS. MOLD FLASH OR PROTRUSIONS ARE NOT TO EXCEED 0.10 INCH. 5. DIMENSION E IS MEASURED AT A POINT 0.015 BELOW DATUM PLANE H WITH THE LEADS CONSTRAINED PERPENDICULAR TO DATUM C. 6. DIMENSION eB IS MEASURED AT THE LEAD TIPS WITH THE LEADS UNCONSTRAINED. 7. DATUM PLANE H IS COINCIDENT WITH THE BOTTOM OF THE LEADS, WHERE THE LEADS EXIT THE BODY. 8. PACKAGE CONTOUR IS OPTIONAL (ROUNDED OR SQUARE CORNERS). DIM A A1 A2 b b2 C D D1 E E1 e eB L M INCHES MIN MAX −−−− 0.210 0.015 −−−− 0.115 0.195 0.014 0.022 0.060 TYP 0.008 0.014 0.735 0.775 0.005 −−−− 0.300 0.325 0.240 0.280 0.100 BSC −−−− 0.430 0.115 0.150 −−−− 10 ° MILLIMETERS MIN MAX −−− 5.33 0.38 −−− 2.92 4.95 0.35 0.56 1.52 TYP 0.20 0.36 18.67 19.69 0.13 −−− 7.62 8.26 6.10 7.11 2.54 BSC −−− 10.92 2.92 3.81 −−− 10 ° GENERIC MARKING DIAGRAM* 16 STYLE 1: PIN 1. CATHODE 2. CATHODE 3. CATHODE 4. CATHODE 5. CATHODE 6. CATHODE 7. CATHODE 8. CATHODE 9. ANODE 10. ANODE 11. ANODE 12. ANODE 13. ANODE 14. ANODE 15. ANODE 16. ANODE DOCUMENT NUMBER: DESCRIPTION: STYLE 2: PIN 1. COMMON DRAIN 2. COMMON DRAIN 3. COMMON DRAIN 4. COMMON DRAIN 5. COMMON DRAIN 6. COMMON DRAIN 7. COMMON DRAIN 8. COMMON DRAIN 9. GATE 10. SOURCE 11. GATE 12. SOURCE 13. GATE 14. SOURCE 15. GATE 16. SOURCE 98ASB42431B PDIP−16 XXXXXXXXXXXX XXXXXXXXXXXX AWLYYWWG 1 XXXXX A WL YY WW G = Specific Device Code = Assembly Location = Wafer Lot = Year = Work Week = Pb−Free Package *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “ G”, may or may not be present. Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the rights of others. © Semiconductor Components Industries, LLC, 2019 www.onsemi.com MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS SOIC−16 CASE 751B−05 ISSUE K DATE 29 DEC 2006 SCALE 1:1 −A− 16 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSIONS A AND B DO NOT INCLUDE MOLD PROTRUSION. 4. MAXIMUM MOLD PROTRUSION 0.15 (0.006) PER SIDE. 5. DIMENSION D DOES NOT INCLUDE DAMBAR PROTRUSION. ALLOWABLE DAMBAR PROTRUSION SHALL BE 0.127 (0.005) TOTAL IN EXCESS OF THE D DIMENSION AT MAXIMUM MATERIAL CONDITION. 9 −B− 1 P 8 PL 0.25 (0.010) 8 M B S G R K F X 45 _ C −T− SEATING PLANE J M D DIM A B C D F G J K M P R MILLIMETERS MIN MAX 9.80 10.00 3.80 4.00 1.35 1.75 0.35 0.49 0.40 1.25 1.27 BSC 0.19 0.25 0.10 0.25 0_ 7_ 5.80 6.20 0.25 0.50 INCHES MIN MAX 0.386 0.393 0.150 0.157 0.054 0.068 0.014 0.019 0.016 0.049 0.050 BSC 0.008 0.009 0.004 0.009 0_ 7_ 0.229 0.244 0.010 0.019 16 PL 0.25 (0.010) M T B S A S STYLE 1: PIN 1. 2. 3. 4. 5. 6. 7. 8. 9. 10. 11. 12. 13. 14. 15. 16. COLLECTOR BASE EMITTER NO CONNECTION EMITTER BASE COLLECTOR COLLECTOR BASE EMITTER NO CONNECTION EMITTER BASE COLLECTOR EMITTER COLLECTOR STYLE 2: PIN 1. 2. 3. 4. 5. 6. 7. 8. 9. 10. 11. 12. 13. 14. 15. 16. CATHODE ANODE NO CONNECTION CATHODE CATHODE NO CONNECTION ANODE CATHODE CATHODE ANODE NO CONNECTION CATHODE CATHODE NO CONNECTION ANODE CATHODE STYLE 3: PIN 1. 2. 3. 4. 5. 6. 7. 8. 9. 10. 11. 12. 13. 14. 15. 16. COLLECTOR, DYE #1 BASE, #1 EMITTER, #1 COLLECTOR, #1 COLLECTOR, #2 BASE, #2 EMITTER, #2 COLLECTOR, #2 COLLECTOR, #3 BASE, #3 EMITTER, #3 COLLECTOR, #3 COLLECTOR, #4 BASE, #4 EMITTER, #4 COLLECTOR, #4 STYLE 4: PIN 1. 2. 3. 4. 5. 6. 7. 8. 9. 10. 11. 12. 13. 14. 15. 16. STYLE 5: PIN 1. 2. 3. 4. 5. 6. 7. 8. 9. 10. 11. 12. 13. 14. 15. 16. DRAIN, DYE #1 DRAIN, #1 DRAIN, #2 DRAIN, #2 DRAIN, #3 DRAIN, #3 DRAIN, #4 DRAIN, #4 GATE, #4 SOURCE, #4 GATE, #3 SOURCE, #3 GATE, #2 SOURCE, #2 GATE, #1 SOURCE, #1 STYLE 6: PIN 1. 2. 3. 4. 5. 6. 7. 8. 9. 10. 11. 12. 13. 14. 15. 16. CATHODE CATHODE CATHODE CATHODE CATHODE CATHODE CATHODE CATHODE ANODE ANODE ANODE ANODE ANODE ANODE ANODE ANODE STYLE 7: PIN 1. 2. 3. 4. 5. 6. 7. 8. 9. 10. 11. 12. 13. 14. 15. 16. SOURCE N‐CH COMMON DRAIN (OUTPUT) COMMON DRAIN (OUTPUT) GATE P‐CH COMMON DRAIN (OUTPUT) COMMON DRAIN (OUTPUT) COMMON DRAIN (OUTPUT) SOURCE P‐CH SOURCE P‐CH COMMON DRAIN (OUTPUT) COMMON DRAIN (OUTPUT) COMMON DRAIN (OUTPUT) GATE N‐CH COMMON DRAIN (OUTPUT) COMMON DRAIN (OUTPUT) SOURCE N‐CH COLLECTOR, DYE #1 COLLECTOR, #1 COLLECTOR, #2 COLLECTOR, #2 COLLECTOR, #3 COLLECTOR, #3 COLLECTOR, #4 COLLECTOR, #4 BASE, #4 EMITTER, #4 BASE, #3 EMITTER, #3 BASE, #2 EMITTER, #2 BASE, #1 EMITTER, #1 SOLDERING FOOTPRINT 8X 6.40 16X 1 1.12 16 16X 0.58 1.27 PITCH 8 9 DIMENSIONS: MILLIMETERS DOCUMENT NUMBER: DESCRIPTION: 98ASB42566B SOIC−16 Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the rights of others. © Semiconductor Components Industries, LLC, 2019 www.onsemi.com onsemi, , and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. 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