MC1413, MC1413B,
NCV1413B
High Voltage, High Current
Darlington Transistor Arrays
The seven NPN Darlington connected transistors in these arrays are
well suited for driving lamps, relays, or printer hammers in a variety of
industrial and consumer applications. Their high breakdown voltage
and internal suppression diodes insure freedom from problems
associated with inductive loads. Peak inrush currents to 500 mA
permit them to drive incandescent lamps.
The MC1413, B with a 2.7 kW series input resistor is well suited for
systems utilizing a 5.0 V TTL or CMOS Logic.
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PDIP−16
P SUFFIX
CASE 648
16
1
SOIC−16
D SUFFIX
CASE 751B
Features
• Pb−Free Packages are Available*
• NCV Prefix for Automotive and Other Applications Requiring Site
16
1
and Control Changes
ORDERING INFORMATION
1/7 MC1413, B
2.7 k
Device
Pin 9
5.0 k
3.0 k
Figure 1. Representative Schematic Diagram
16
1
Package
Shipping†
MC1413D
SOIC−16
48 Units/Rail
MC1413DG
SOIC−16
(Pb−Free)
48 Units/Tube
MC1413DR2
SOIC−16
2500 Tape & Reel
MC1413DR2G
SOIC−16
(Pb−Free)
2500 Tape & Reel
MC1413P
PDIP−16
25 Units/Rail
MC1413PG
PDIP−16
(Pb−Free)
25 Units/Rail
MC1413BD
SOIC−16
48 Units/Rail
MC1413BDG
SOIC−16
(Pb−Free)
48 Units/Rail
2
15
MC1413BDR2
SOIC−16
2500 Tape & Reel
3
14
MC1413BDR2G
SOIC−16
(Pb−Free)
2500 Tape & Reel
4
13
MC1413BP
PDIP−16
25 Units/Rail
MC1413BPG
12
PDIP−16
(Pb−Free)
25 Units/Rail
5
6
11
NCV1413BDR2
SOIC−16
2500 Tape & Reel
NCV1413BDR2G
SOIC−16
(Pb−Free)
2500 Tape & Reel
10
7
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
9
8
(Top View)
DEVICE MARKING INFORMATION
Figure 2. PIN CONNECTIONS
See general marking information in the device marking
section on page 5 of this data sheet.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques Reference
Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2006
July, 2006 − Rev. 8
1
Publication Order Number:
MC1413/D
MC1413, MC1413B, NCV1413B
MAXIMUM RATINGS (TA = 25°C, and rating apply to any one device in the package, unless otherwise noted.)
Symbol
Value
Unit
Output Voltage
VO
50
V
Input Voltage
VI
30
V
Collector Current − Continuous
IC
500
mA
Base Current − Continuous
IB
25
mA
Operating Ambient Temperature Range
MC1413
MC1413B
NCV1413B
TA
Storage Temperature Range
Tstg
−55 to +150
°C
Junction Temperature
TJ
150
°C
Rating
°C
−20 to +85
−40 to +85
−40 to +125
Thermal Resistance, Junction−to−Ambient
Case 648, P Suffix
Case 751B, D Suffix
RqJA
Thermal Resistance, Junction−to−Case
Case 648, P Suffix
Case 751B, D Suffix
RqJC
Electrostatic Discharge Sensitivity (ESD)
Human Body Model (HBM)
Machine Model (MM)
Charged Device Model (CDM)
ESD
°C/W
67
100
°C/W
22
20
V
2000
400
1500
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
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2
MC1413, MC1413B, NCV1413B
ELECTRICAL CHARACTERISTICS (TA = 25°C, unless otherwise noted)
Symbol
Min
Typ
Max
−
−
−
−
100
50
−
−
−
1.1
0.95
0.85
1.6
1.3
1.1
−
0.93
1.35
−
−
−
−
−
−
2.4
2.7
3.0
II(off)
50
100
−
mA
hFE
1000
−
−
−
Input Capacitance
CI
−
15
30
pF
Turn−On Delay Time
(50% EI to 50% EO)
ton
−
0.25
1.0
ms
Turn−Off Delay Time
(50% EI to 50% EO)
toff
−
0.25
1.0
ms
IR
−
−
−
−
50
100
mA
VF
−
1.5
2.0
V
Characteristic
Output Leakage Current
(VO = 50 V, TA = +85°C)
(VO = 50 V, TA = +25°C)
All Types
All Types
Collector−Emitter Saturation Voltage
(IC = 350 mA, IB = 500 mA)
(IC = 200 mA, IB = 350 mA)
(IC = 100 mA, IB = 250 mA)
All Types
All Types
All Types
VCE(sat)
Input Current − On Condition
(VI = 3.85 V)
MC1413, B
Input Voltage − On Condition
(VCE = 2.0 V, IC = 200 mA)
(VCE = 2.0 V, IC = 250 mA)
(VCE = 2.0 V, IC = 300 mA)
MC1413, B
MC1413, B
MC1413, B
All Types
TA = +25°C
TA = +85°C
Clamp Diode Forward Voltage
(IF = 350 mA)
NOTE:
mA
VI(on)
DC Current Gain
(VCE = 2.0 V, IC = 350 mA)
Clamp Diode Leakage Current
(VR = 50 V)
V
II(on)
Input Current − Off Condition
(IC = 500 mA, TA = 85°C)
Unit
mA
ICEX
V
NCV1413B Tlow = −40°C, Thigh = +125°C. Guaranteed by design. NCV prefix is for automotive and other applications requiring
site and change control.
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3
MC1413, MC1413B, NCV1413B
TYPICAL PERFORMANCE CURVES − TA = 25°C
400
I O , OUTPUT CURRENT (mA)
300
MC1413, B
200
100
0
0
1.0
2.0
3.0
4.0
5.0
8.0
9.0
10
11
All Types
200
100
0
12
0
50
100
150
200
250
300
350
VI, INPUT VOLTAGE (V)
II, INPUT CURRENT (mA)
Figure 3. Output Current versus Input Voltage
Figure 4. Output Current versus Input Current
800
400
2.5
700
600
I I, INPUT CURRENT (mA)
PIN 13
PIN 10
1 Output Conducting at a Time
500
PIN 16
400
300
200
2.0
Maximum
1.5
Typical
1.0
0.5
All Types
100
0
0
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.0
0
2.0
3.0
4.0
5.0
6.0
7.0
VCE(sat), SATURATION VOLTAGE (V)
VI, INPUT VOLTAGE (V)
Figure 5. Typical Output Characteristics
Figure 6. Input Characteristics − MC1413, B
1000
I C, COLLECTOR CURRENT (mA)
IC , COLLECTOR CURRENT (mA)
300
1
700
2
500
3
300
4
5
200
6
7
100
10
20
30
50
70
% DUTY CYCLE
Figure 7. Maximum Collector Current
versus Duty Cycle
(and Number of Drivers in Use)
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4
100
NUMBER OF DRIVERS USED
I O , OUTPUT CURRENT (mA)
400
8.0
MC1413, MC1413B, NCV1413B
MARKING DIAGRAMS
PDIP−16
P SUFFIX
CASE 648
16
16
MC1413P
ULN2003A
AWLYYWWG
MC1413BP
ULQ2003A
AWLYYWWG
1
1
SOIC−16
D SUFFIX
CASE 751B
16
16
MC1413DG
AWLYWW
1
16
MC1413BDG
AWLYWW
1
A
WL
YY, Y
WW
G
NCV1413BDG
AWLYWW
1
= Assembly Location
= Wafer Lot
= Year
= Work Week
= Pb−Free Package
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5
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
PDIP−16
CASE 648−08
ISSUE V
16
1
SCALE 1:1
D
A
16
9
E
H
E1
1
NOTE 8
b2
8
c
B
TOP VIEW
END VIEW
WITH LEADS CONSTRAINED
NOTE 5
A2
A
e/2
NOTE 3
L
A1
C
D1
e
SEATING
PLANE
M
eB
END VIEW
16X b
SIDE VIEW
0.010
M
C A
M
B
M
NOTE 6
DATE 22 APR 2015
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: INCHES.
3. DIMENSIONS A, A1 AND L ARE MEASURED WITH THE PACKAGE SEATED IN JEDEC SEATING PLANE GAUGE GS−3.
4. DIMENSIONS D, D1 AND E1 DO NOT INCLUDE MOLD FLASH
OR PROTRUSIONS. MOLD FLASH OR PROTRUSIONS ARE
NOT TO EXCEED 0.10 INCH.
5. DIMENSION E IS MEASURED AT A POINT 0.015 BELOW DATUM
PLANE H WITH THE LEADS CONSTRAINED PERPENDICULAR
TO DATUM C.
6. DIMENSION eB IS MEASURED AT THE LEAD TIPS WITH THE
LEADS UNCONSTRAINED.
7. DATUM PLANE H IS COINCIDENT WITH THE BOTTOM OF THE
LEADS, WHERE THE LEADS EXIT THE BODY.
8. PACKAGE CONTOUR IS OPTIONAL (ROUNDED OR SQUARE
CORNERS).
DIM
A
A1
A2
b
b2
C
D
D1
E
E1
e
eB
L
M
INCHES
MIN
MAX
−−−−
0.210
0.015
−−−−
0.115 0.195
0.014 0.022
0.060 TYP
0.008 0.014
0.735 0.775
0.005
−−−−
0.300 0.325
0.240 0.280
0.100 BSC
−−−−
0.430
0.115 0.150
−−−−
10 °
MILLIMETERS
MIN
MAX
−−−
5.33
0.38
−−−
2.92
4.95
0.35
0.56
1.52 TYP
0.20
0.36
18.67 19.69
0.13
−−−
7.62
8.26
6.10
7.11
2.54 BSC
−−−
10.92
2.92
3.81
−−−
10 °
GENERIC
MARKING DIAGRAM*
16
STYLE 1:
PIN 1. CATHODE
2. CATHODE
3. CATHODE
4. CATHODE
5. CATHODE
6. CATHODE
7. CATHODE
8. CATHODE
9. ANODE
10. ANODE
11. ANODE
12. ANODE
13. ANODE
14. ANODE
15. ANODE
16. ANODE
DOCUMENT NUMBER:
DESCRIPTION:
STYLE 2:
PIN 1. COMMON DRAIN
2. COMMON DRAIN
3. COMMON DRAIN
4. COMMON DRAIN
5. COMMON DRAIN
6. COMMON DRAIN
7. COMMON DRAIN
8. COMMON DRAIN
9. GATE
10. SOURCE
11. GATE
12. SOURCE
13. GATE
14. SOURCE
15. GATE
16. SOURCE
98ASB42431B
PDIP−16
XXXXXXXXXXXX
XXXXXXXXXXXX
AWLYYWWG
1
XXXXX
A
WL
YY
WW
G
= Specific Device Code
= Assembly Location
= Wafer Lot
= Year
= Work Week
= Pb−Free Package
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “ G”,
may or may not be present.
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
PAGE 1 OF 1
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the
rights of others.
© Semiconductor Components Industries, LLC, 2019
www.onsemi.com
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
SOIC−16
CASE 751B−05
ISSUE K
DATE 29 DEC 2006
SCALE 1:1
−A−
16
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSIONS A AND B DO NOT INCLUDE MOLD
PROTRUSION.
4. MAXIMUM MOLD PROTRUSION 0.15 (0.006) PER SIDE.
5. DIMENSION D DOES NOT INCLUDE DAMBAR
PROTRUSION. ALLOWABLE DAMBAR PROTRUSION
SHALL BE 0.127 (0.005) TOTAL IN EXCESS OF THE D
DIMENSION AT MAXIMUM MATERIAL CONDITION.
9
−B−
1
P
8 PL
0.25 (0.010)
8
M
B
S
G
R
K
F
X 45 _
C
−T−
SEATING
PLANE
J
M
D
DIM
A
B
C
D
F
G
J
K
M
P
R
MILLIMETERS
MIN
MAX
9.80
10.00
3.80
4.00
1.35
1.75
0.35
0.49
0.40
1.25
1.27 BSC
0.19
0.25
0.10
0.25
0_
7_
5.80
6.20
0.25
0.50
INCHES
MIN
MAX
0.386
0.393
0.150
0.157
0.054
0.068
0.014
0.019
0.016
0.049
0.050 BSC
0.008
0.009
0.004
0.009
0_
7_
0.229
0.244
0.010
0.019
16 PL
0.25 (0.010)
M
T B
S
A
S
STYLE 1:
PIN 1.
2.
3.
4.
5.
6.
7.
8.
9.
10.
11.
12.
13.
14.
15.
16.
COLLECTOR
BASE
EMITTER
NO CONNECTION
EMITTER
BASE
COLLECTOR
COLLECTOR
BASE
EMITTER
NO CONNECTION
EMITTER
BASE
COLLECTOR
EMITTER
COLLECTOR
STYLE 2:
PIN 1.
2.
3.
4.
5.
6.
7.
8.
9.
10.
11.
12.
13.
14.
15.
16.
CATHODE
ANODE
NO CONNECTION
CATHODE
CATHODE
NO CONNECTION
ANODE
CATHODE
CATHODE
ANODE
NO CONNECTION
CATHODE
CATHODE
NO CONNECTION
ANODE
CATHODE
STYLE 3:
PIN 1.
2.
3.
4.
5.
6.
7.
8.
9.
10.
11.
12.
13.
14.
15.
16.
COLLECTOR, DYE #1
BASE, #1
EMITTER, #1
COLLECTOR, #1
COLLECTOR, #2
BASE, #2
EMITTER, #2
COLLECTOR, #2
COLLECTOR, #3
BASE, #3
EMITTER, #3
COLLECTOR, #3
COLLECTOR, #4
BASE, #4
EMITTER, #4
COLLECTOR, #4
STYLE 4:
PIN 1.
2.
3.
4.
5.
6.
7.
8.
9.
10.
11.
12.
13.
14.
15.
16.
STYLE 5:
PIN 1.
2.
3.
4.
5.
6.
7.
8.
9.
10.
11.
12.
13.
14.
15.
16.
DRAIN, DYE #1
DRAIN, #1
DRAIN, #2
DRAIN, #2
DRAIN, #3
DRAIN, #3
DRAIN, #4
DRAIN, #4
GATE, #4
SOURCE, #4
GATE, #3
SOURCE, #3
GATE, #2
SOURCE, #2
GATE, #1
SOURCE, #1
STYLE 6:
PIN 1.
2.
3.
4.
5.
6.
7.
8.
9.
10.
11.
12.
13.
14.
15.
16.
CATHODE
CATHODE
CATHODE
CATHODE
CATHODE
CATHODE
CATHODE
CATHODE
ANODE
ANODE
ANODE
ANODE
ANODE
ANODE
ANODE
ANODE
STYLE 7:
PIN 1.
2.
3.
4.
5.
6.
7.
8.
9.
10.
11.
12.
13.
14.
15.
16.
SOURCE N‐CH
COMMON DRAIN (OUTPUT)
COMMON DRAIN (OUTPUT)
GATE P‐CH
COMMON DRAIN (OUTPUT)
COMMON DRAIN (OUTPUT)
COMMON DRAIN (OUTPUT)
SOURCE P‐CH
SOURCE P‐CH
COMMON DRAIN (OUTPUT)
COMMON DRAIN (OUTPUT)
COMMON DRAIN (OUTPUT)
GATE N‐CH
COMMON DRAIN (OUTPUT)
COMMON DRAIN (OUTPUT)
SOURCE N‐CH
COLLECTOR, DYE #1
COLLECTOR, #1
COLLECTOR, #2
COLLECTOR, #2
COLLECTOR, #3
COLLECTOR, #3
COLLECTOR, #4
COLLECTOR, #4
BASE, #4
EMITTER, #4
BASE, #3
EMITTER, #3
BASE, #2
EMITTER, #2
BASE, #1
EMITTER, #1
SOLDERING FOOTPRINT
8X
6.40
16X
1
1.12
16
16X
0.58
1.27
PITCH
8
9
DIMENSIONS: MILLIMETERS
DOCUMENT NUMBER:
DESCRIPTION:
98ASB42566B
SOIC−16
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
PAGE 1 OF 1
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the
rights of others.
© Semiconductor Components Industries, LLC, 2019
www.onsemi.com
onsemi,
, and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates
and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property.
A listing of onsemi’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. onsemi reserves the right to make changes at any time to any
products or information herein, without notice. The information herein is provided “as−is” and onsemi makes no warranty, representation or guarantee regarding the accuracy of the
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