MC14572UBCPG

MC14572UB Hex Gate The MC14572UB hex functional gate is constructed with MOS P−channel and N−channel enhancement mode devices in a single monolithic structure. These complementary MOS logic gates find primary use where low power dissipation and/or high noise immunity is desired. The chip contains four inverters, one NOR gate and one NAND gate. http://onsemi.com Features • • • • • • • • • • Diode Protection on All Inputs Single Supply Operation Supply Voltage Range = 3.0 Vdc to 18 Vdc NOR Input Pin Adjacent to VSS Pin to Simplify Use As An Inverter NAND Input Pin Adjacent to VDD Pin to Simplify Use As An Inverter NOR Output Pin Adjacent to Inverter Input Pin For OR Application NAND Output Pin Adjacent to Inverter Input Pin For AND Application Capable of Driving Two Low−Power TTL Loads or One Low−Power Schottky TTL Load over the Rated Temperature Range NLV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q100 Qualified and PPAP Capable* This Device is Pb−Free and is RoHS Compliant 1 SOIC−16 D SUFFIX CASE 751B PIN ASSIGNMENT OUTA 1 16 VDD INA 2 15 IN 2F OUTB 3 14 IN 1F INB 4 13 OUTF OUTC 5 12 INE IN 1C 6 11 OUTE IN 2C 7 10 IND VSS 8 9 OUTD MARKING DIAGRAM MAXIMUM RATINGS (Voltages Referenced to VSS) Symbol Value Unit VDD −0.5 to +18.0 V Vin, Vout −0.5 to VDD + 0.5 V Input or Output Current (DC or Transient) per Pin Iin, Iout ±10 mA Power Dissipation, per Package (Note 1) PD 500 mW Ambient Temperature Range TA −55 to +125 °C Storage Temperature Range Tstg −65 to +150 °C Lead Temperature (8−Second Soldering) TL 260 °C Parameter DC Supply Voltage Range Input or Output Voltage Range (DC or Transient) Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Temperature Derating: “D/DW” Package: –7.0 mW/_C From 65_C To 125_C This device contains protection circuitry to guard against damage due to high static voltages or electric fields. However, precautions must be taken to avoid applications of any voltage higher than maximum rated voltages to this high−impedance circuit. For proper operation, Vin and Vout should be constrained to the range VSS ≤ (Vin or Vout) ≤ VDD. Unused inputs must always be tied to an appropriate logic voltage level (e.g., either VSS or VDD). Unused outputs must be left open. © Semiconductor Components Industries, LLC, 2014 July, 2014 − Rev. 10 1 16 14572UG AWLYWW 1 A WL YY WW G = Assembly Location = Wafer Lot = Year = Work Week = Pb−Free Package ORDERING INFORMATION Device Package Shipping† MC14572UBDG SOIC−16 (Pb−Free) 48 Units / Rail MC14572UBDR2G SOIC−16 (Pb−Free) 2500/Tape & Reel NLV14572UBDR2G* SOIC−16 (Pb−Free) 2500/Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Publication Order Number: MC14572UB/D MC14572UB LOGIC DIAGRAM 2 1 4 3 6 5 7 10 9 12 11 14 13 15 VDD = PIN 16 VSS = PIN 8 CIRCUIT SCHEMATIC VDD VDD VDD 7 1 2 13 6 5 VSS 14 15 VSS http://onsemi.com 2 VSS MC14572UB ELECTRICAL CHARACTERISTICS (Voltages Referenced to VSS) − 55_C Symbol Characteristic 25_C VDD Vdc Min Max Min Typ (Note 2) 125_C Max Min Max Unit Output Voltage Vin = VDD or 0 “0” Level VOL 5.0 10 15 − − − 0.05 0.05 0.05 − − − 0 0 0 0.05 0.05 0.05 − − − 0.05 0.05 0.05 Vdc Vin = 0 or VDD “1” Level VOH 5.0 10 15 4.95 9.95 14.95 − − − 4.95 9.95 14.95 5.0 10 15 − − − 4.95 9.95 14.95 − − − Vdc Input Voltage “0” Level (VO = 4.5 or 0.5 Vdc) (VO = 9.0 or 1.0 Vdc) (VO = 13.5 or 1.5 Vdc) VIL 5.0 10 15 − − − 1.0 2.0 2.5 − − − 2.25 4.50 6.75 1.0 2.0 2.5 − − − 1.0 2.0 2.5 “1” Level (VO = 0.5 or 4.5 Vdc) (VO = 1.0 or 9.0 Vdc) (VO = 1.5 or 13.5 Vdc) VIH 5.0 10 15 4.0 8.0 12.5 − − − 4.0 8.0 12.5 2.75 5.50 8.25 − − − 4.0 8.0 12.5 − − − 5.0 5.0 10 15 –1.2 –0.25 –0.62 –1.8 − − − − –1.0 –0.2 –0.5 –1.5 –1.7 –0.36 –0.9 –3.5 − − − − –0.7 –0.14 –0.35 –1.1 − − − − IOL 5.0 10 15 0.64 1.6 4.2 − − − 0.51 1.3 3.4 0.88 2.25 8.8 − − − 0.36 0.9 2.4 − − − mAdc Iin 15 − ± 0.1 − ± 0.00001 ± 0.1 − ± 1.0 mAdc Output Drive Current (VOH = 2.5 Vdc) (VOH = 4.6 Vdc) (VOH = 9.5 Vdc) (VOH = 13.5 Vdc) Vdc Vdc IOH Source (VOL = 0.4 Vdc) (VOL = 0.5 Vdc) (VOL = 1.5 Vdc) Sink Input Current mAdc Input Capacitance (Vin = 0) Cin − − − − 5.0 7.5 − − pF Quiescent Current (Per Package) IDD 5.0 10 15 − − − 0.25 0.5 1.0 − − − 0.0005 0.0010 0.0015 0.25 0.5 1.0 − − − 7.5 15 30 mAdc Total Supply Current (Notes 3, 4) (Dynamic plus Quiescent, Per Package) (CL = 50 pF on all outputs, all buffers switching) IT 5.0 10 15 IT = (1.89 mA/kHz) f + IDD IT = (3.80 mA/kHz) f + IDD IT = (5.68 mA/kHz) f + IDD mAdc Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 2. Data labelled “Typ” is not to be used for design purposes but is intended as an indication of the IC’s potential performance. 3. The formulas given are for the typical characteristics only at 25_C. 4. To calculate total supply current at loads other than 50 pF: IT(CL) = IT(50 pF) + (CL – 50) Vfk where: IT is in mA (per package), CL in pF, V = (VDD – VSS) in volts, f in kHz is input frequency, and k = 0.006. http://onsemi.com 3 MC14572UB SWITCHING CHARACTERISTICS (Type 5) (CL = 50 pF, TA = 25_C) Symbol Characteristic Output Rise Time tTLH = (3.0 ns/pF) CL + 30 ns tTLH = (1.5 ns/pF) CL + 15 ns tTLH = (1.1 ns/pF) CL + 10 ns tTLH Output Fall Time tTHL = (1.5 ns/pF) CL + 25 ns tTHL = (0.75 ns/pF) CL + 12.5 ns tTHL = (0.55 ns/pF) CL + 9.5 ns tTHL Propagation Delay Time tPLH, tPHL = (1.7 ns/pF) CL + 5 ns tPLH, tPHL = (0.66 ns/pF) CL + 17 ns tPLH, tPHL = (0.5 ns/pF) CL + 15 ns tPLH, tPHL VDD Min Typ (Note 6) Max 5.0 10 15 − − − 180 90 65 360 180 130 5.0 10 15 − − − 100 50 40 200 100 80 5.0 10 15 − − − 90 50 40 180 100 80 Unit ns ns ns 5. The formulas given are for the typical characteristics only at 25_C. 6. Data labelled “Typ” is not to be used for design purposes but is intended as an indication of the IC’s potential performance. VDD PULSE GENERATOR VDD INPUT 7 16 INPUT 2 PULSE GENERATOR OUTPUT 16 6 OUTPUT 1 8 VSS 5 CL 8 VSS CL VDD 20 ns 16 PULSE GENERATOR INPUT 15 INPUT 14 OUTPUT VSS 90% 50% 10% tPHL 13 8 90% 50% 10% CL OUTPUT 90% 50% 10% 90% 50% 10% Figure 1. Switching Time Test Circuits and Waveforms 4 VSS tPLH tf http://onsemi.com 20 ns VDD tr VOH VOL MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS SOIC−16 CASE 751B−05 ISSUE K DATE 29 DEC 2006 SCALE 1:1 −A− 16 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSIONS A AND B DO NOT INCLUDE MOLD PROTRUSION. 4. MAXIMUM MOLD PROTRUSION 0.15 (0.006) PER SIDE. 5. DIMENSION D DOES NOT INCLUDE DAMBAR PROTRUSION. ALLOWABLE DAMBAR PROTRUSION SHALL BE 0.127 (0.005) TOTAL IN EXCESS OF THE D DIMENSION AT MAXIMUM MATERIAL CONDITION. 9 −B− 1 P 8 PL 0.25 (0.010) 8 M B S G R K F X 45 _ C −T− SEATING PLANE J M D DIM A B C D F G J K M P R MILLIMETERS MIN MAX 9.80 10.00 3.80 4.00 1.35 1.75 0.35 0.49 0.40 1.25 1.27 BSC 0.19 0.25 0.10 0.25 0_ 7_ 5.80 6.20 0.25 0.50 INCHES MIN MAX 0.386 0.393 0.150 0.157 0.054 0.068 0.014 0.019 0.016 0.049 0.050 BSC 0.008 0.009 0.004 0.009 0_ 7_ 0.229 0.244 0.010 0.019 16 PL 0.25 (0.010) M T B S A S STYLE 1: PIN 1. 2. 3. 4. 5. 6. 7. 8. 9. 10. 11. 12. 13. 14. 15. 16. COLLECTOR BASE EMITTER NO CONNECTION EMITTER BASE COLLECTOR COLLECTOR BASE EMITTER NO CONNECTION EMITTER BASE COLLECTOR EMITTER COLLECTOR STYLE 2: PIN 1. 2. 3. 4. 5. 6. 7. 8. 9. 10. 11. 12. 13. 14. 15. 16. CATHODE ANODE NO CONNECTION CATHODE CATHODE NO CONNECTION ANODE CATHODE CATHODE ANODE NO CONNECTION CATHODE CATHODE NO CONNECTION ANODE CATHODE STYLE 3: PIN 1. 2. 3. 4. 5. 6. 7. 8. 9. 10. 11. 12. 13. 14. 15. 16. COLLECTOR, DYE #1 BASE, #1 EMITTER, #1 COLLECTOR, #1 COLLECTOR, #2 BASE, #2 EMITTER, #2 COLLECTOR, #2 COLLECTOR, #3 BASE, #3 EMITTER, #3 COLLECTOR, #3 COLLECTOR, #4 BASE, #4 EMITTER, #4 COLLECTOR, #4 STYLE 4: PIN 1. 2. 3. 4. 5. 6. 7. 8. 9. 10. 11. 12. 13. 14. 15. 16. STYLE 5: PIN 1. 2. 3. 4. 5. 6. 7. 8. 9. 10. 11. 12. 13. 14. 15. 16. DRAIN, DYE #1 DRAIN, #1 DRAIN, #2 DRAIN, #2 DRAIN, #3 DRAIN, #3 DRAIN, #4 DRAIN, #4 GATE, #4 SOURCE, #4 GATE, #3 SOURCE, #3 GATE, #2 SOURCE, #2 GATE, #1 SOURCE, #1 STYLE 6: PIN 1. 2. 3. 4. 5. 6. 7. 8. 9. 10. 11. 12. 13. 14. 15. 16. CATHODE CATHODE CATHODE CATHODE CATHODE CATHODE CATHODE CATHODE ANODE ANODE ANODE ANODE ANODE ANODE ANODE ANODE STYLE 7: PIN 1. 2. 3. 4. 5. 6. 7. 8. 9. 10. 11. 12. 13. 14. 15. 16. SOURCE N‐CH COMMON DRAIN (OUTPUT) COMMON DRAIN (OUTPUT) GATE P‐CH COMMON DRAIN (OUTPUT) COMMON DRAIN (OUTPUT) COMMON DRAIN (OUTPUT) SOURCE P‐CH SOURCE P‐CH COMMON DRAIN (OUTPUT) COMMON DRAIN (OUTPUT) COMMON DRAIN (OUTPUT) GATE N‐CH COMMON DRAIN (OUTPUT) COMMON DRAIN (OUTPUT) SOURCE N‐CH COLLECTOR, DYE #1 COLLECTOR, #1 COLLECTOR, #2 COLLECTOR, #2 COLLECTOR, #3 COLLECTOR, #3 COLLECTOR, #4 COLLECTOR, #4 BASE, #4 EMITTER, #4 BASE, #3 EMITTER, #3 BASE, #2 EMITTER, #2 BASE, #1 EMITTER, #1 SOLDERING FOOTPRINT 8X 6.40 16X 1 1.12 16 16X 0.58 1.27 PITCH 8 9 DIMENSIONS: MILLIMETERS DOCUMENT NUMBER: DESCRIPTION: 98ASB42566B SOIC−16 Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. 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