MC74HCT138AN

MC74HCT138A 1−of−8 Decoder/ Demultiplexer with LSTTL Compatible Inputs High−Performance Silicon−Gate CMOS http://onsemi.com The MC74HCT138A is identical in pinout to the LS138. The HCT138A may be used as a level converter for interfacing TTL or NMOS outputs to High Speed CMOS inputs. The HCT138A decodes a three−bit Address to one−of−eight active−lot outputs. This device features three Chip Select inputs, two active−low and one active−high to facilitate the demultiplexing, cascading, and chip−selecting functions. The demultiplexing function is accomplished by using the Address inputs to select the desired device output; one of the Chip Selects is used as a data input while the other Chip Selects are held in their active states. Features MARKING DIAGRAMS 16 16 1 PDIP−16 N SUFFIX CASE 648 MC74HCT138AN AWLYYWWG 1 16 • • • • • • • • Output Drive Capability: 10 LSTTL Loads TTL/NMOS Compatible Input Levels Outputs Directly Interface to CMOS, NMOS, and TTL Operating Voltage Range: 4.5 to 5.5 V Low Input Current: 1.0 mA In Compliance with the Requirements Defined by JEDEC Standard No. 7A Chip Complexity: 122 FETs or 30.5 Equivalent Gates Pb−Free Packages are Available* 16 1 SOIC−16 D SUFFIX CASE 751B 1 HCT138AG AWLYWW 16 16 1 TSSOP−16 DT SUFFIX CASE 948F 1 A WL, L Y, YY W, WW G = = = = = Assembly Location Wafer Lot Year Work Week Pb−Free Package HCT 138 ALYW ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 2 of this data sheet. *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. © Semiconductor Components Industries, LLC, 2005 1 July, 2005 − Rev. 8 Publication Order Number: MC74HCT138A/D MC74HCT138A LOGIC DIAGRAM A0 ADDRESS INPUTS A1 A2 1 2 3 15 14 13 12 11 10 9 7 Y0 Y1 Y2 Y3 Y4 Y5 Y6 Y7 ACTIVE−LOW OUTPUTS PIN ASSIGNMENT A0 A1 A2 CS2 CS3 CS1 Y7 GND 1 2 3 4 5 6 7 8 16 15 14 13 12 11 10 9 VCC Y0 Y1 Y2 Y3 Y4 Y5 Y6 CHIP− SELECT INPUTS CS1 CS2 CS3 6 4 5 PIN 16 = VCC PIN 8 = GND FUNCTION TABLE Inputs Outputs X X X L L H H L L H H X X X L H L H L H L H H H H L H H H H H H H H H H H L H H H H H H H H H H H L H H H H H H H H H H H L H H H H H H H H H H H L H H H H H H H H H H H L H H H H H H H H H H H L H H H H H H H H H H H L CS1CS2 CS3 A2 A1 A0 Y0 Y1 Y2 Y3 Y4 Y5 Y6 Y7 ORDERING INFORMATION Device MC74HCT138AN MC74HCT138ANG MC74HCT138AD MC74HCT138ADG MC74HCT138ADR2 MC74HCT138ADR2G MC74HCT138ADTR2 Package PDIP−16 PDIP−16 (Pb−Free) SOIC−16 SOIC−16 (Pb−Free) SOIC−16 SOIC−16 (Pb−Free) TSSOP−16* Shipping † 500 Units / Box 500 Units / Box 48 Units / Rail 48 Units / Rail 2500 Units / Tape & Reel 2500 Units / Tape & Reel 2500 Units / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. *This package is inherently Pb−Free. ÎÎ Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎ Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ Design Criteria Value 30.5 1.5 5.0 Units ea. ns Internal Gate Count* Internal Gate Propagation Delay Internal Gate Power Dissipation Speed Power Product mW pJ .0075 *Equivalent to a two−input NAND gate. 2 X X L H H H H H H H H X H X L L L L L L L L H X X L L L L L L L L X X X L L L L H H H H H = high level (steady state) L = low level (steady state) X = don’t care http://onsemi.com MC74HCT138A ÎÎÎ Î Î Î Î Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î ÎÎ Î ÎÎÎÎÎÎÎÎÎ Î Î ÎÎ Î ÎÎ ÎÎÎÎÎ Î Î Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î Î ÎÎÎ Î Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î ÎÎ Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î ÎÎ ÎÎÎÎÎ Î Î Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î ÎÎ Î Î Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î Î ÎÎ Î Î ÎÎ ÎÎ Î Î Î Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ Î Î Î ÎÎÎ Î Î ÎÎ Î Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î Î ÎÎ Î Î ÎÎ ÎÎ Î Î Î Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î ÎÎ Î Î Î Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎ Î ÎÎÎ Î Î Î Î Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î ÎÎ ÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎ Î Î Î ÎÎÎÎÎ Î Î Î Î Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î ÎÎ ÎÎ Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î ÎÎ Î Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ Î Î Î Î Î Î Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î Î ÎÎ Î ÎÎÎÎÎÎÎ Î Î Î Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ Î Î Î Î ÎÎ Î ÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ Î Î Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ Î Î ÎÎÎ Î Î ÎÎ Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î Î ÎÎÎ Î Î ÎÎÎ Î Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎ Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î ÎÎ Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎ ÎÎ Î Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î ÎÎÎ Î Î Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎ Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎ Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎ Î Î Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎ Î ÎÎ Î Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎ Î Î ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎ ÎÎ Î Î Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î Î Î ÎÎÎ ÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎ Î Î Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎ Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎ Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ MAXIMUM RATINGS Symbol VCC Vin Parameter Value Unit V V V DC Supply Voltage (Referenced to GND) DC Input Voltage (Referenced to GND) – 0.5 to + 7.0 – 0.5 to VCC + 0.5 – 0.5 to VCC + 0.5 ± 20 ± 25 ± 50 750 500 450 Vout Iin DC Output Voltage (Referenced to GND) DC Input Current, per Pin mA mA mA Iout DC Output Current, per Pin ICC PD DC Supply Current, VCC and GND Pins Power Dissipation in Still Air Plastic DIP† SOIC Package† TSSOP Package† mW Tstg TL Storage Temperature – 65 to + 150 260 _C _C Lead Temperature, 1 mm from Case for 10 Seconds (Plastic DIP, TSSOP or SOIC Package) This device contains protection circuitry to guard against damage due to high static voltages or electric fields. However, precautions must be taken to avoid applications of any voltage higher than maximum rated voltages to this high−impedance circuit. For proper operation, Vin and Vout should be constrained to the range GND v (Vin or Vout) v VCC. Unused inputs must always be tied to an appropriate logic voltage level (e.g., either GND or VCC). Unused outputs must be left open. Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. †Derating — Plastic DIP: – 10 mW/_C from 65_ to 125_C SOIC Package: – 7 mW/_C from 65_ to 125_C TSSOP Package: − 6.1 mW/_C from 65_ to 125_C For high frequency or heavy load considerations, see Chapter 2 of the ON Semiconductor High−Speed CMOS Data Book (DL129/D). RECOMMENDED OPERATING CONDITIONS Symbol VCC Parameter Min 4.5 0 Max 5.5 Unit V V DC Supply Voltage (Referenced to GND) Vin, Vout TA DC Input Voltage, Output Voltage (Referenced to GND) Operating Temperature, All Package Types Input Rise and Fall Time (Figure 1) VCC – 55 0 + 125 500 _C ns tr, tf DC ELECTRICAL CHARACTERISTICS (Voltages Referenced to GND) Guaranteed Limit v 85_C 2.0 2.0 0.8 0.8 4.4 5.4 Symbol VIH VIL Parameter Test Conditions VCC V 4.5 5.5 4.5 5.5 4.5 5.5 4.5 4.5 5.5 4.5 6.0 5.5 – 55 to 25_C 2.0 2.0 0.8 0.8 4.4 5.4 v 125_C 2.0 2.0 0.8 0.8 4.4 5.4 3.7 0.1 0.1 0.4 Unit V V V Minimum High−Level Input Voltage Vout = 0.1 V or VCC – 0.1 V |Iout| v 20 mA Vout = 0.1 V or VCC – 0.1 V |Iout| v 20 mA Vin = VIH or VIL |Iout| v 20 mA Vin = VIH or VIL |Iout| v 4.0 mA Vin = VIH or VIL |Iout| v 20 mA Vin = VIH or VIL |Iout| v 4.0 mA Maximum Low−Level Input Voltage VOH Minimum High−Level Output Voltage 3.98 0.1 0.1 3.84 0.1 0.1 VOL Maximum Low−Level Output Voltage V 0.26 0.33 Iin Maximum Input Leakage Current Maximum Quiescent Supply Current (per Package) Vin = VCC or GND Vin = VCC or GND Iout = 0 mA ± 0.1 4.0 ± 1.0 40 ± 1.0 160 mA mA ICC Vin = 2.4 V, Any One Input ≥ − 55_C 25_C to 125_C Vin = VCC or GND, Other Inputs 2.9 2.4 lout = 0 mA 5.5 mA DICC NOTE: Information on typical parametric values can be found in Chapter 2 of the ON Semiconductor High−Speed CMOS Data Book (DL129/D). Additional Quiescent Supply Current http://onsemi.com 3 MC74HCT138A AC ELECTRICAL CHARACTERISTICS (VCC = 5.0 V ± 10%, CL = 50 pF, Input tr = tf = 6.0 ns) ÎÎÎ Î Î Î Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ Î ÎÎÎÎÎ Î Î ÎÎ Î Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎ Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎ Î Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎ Î Î Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ Î Î ÎÎÎÎÎ Î Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ Î ÎÎÎ ÎÎ Î Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ Î Î ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î Î Guaranteed Limit v 85_C 38 34 38 19 Symbol tPLH, tPHL tPLH, tPHL tPLH, tPHL tTLH, tTHL tr, tf Cin Parameter – 55 to 25_C 30 27 30 15 v 125_C 45 41 45 22 Unit ns ns ns ns ns Maximum Propagation Delay, Input A to Output Y (Figures 1 and 4) Maximum Propagation Delay, CS1 to Output Y (Figures 2 and 4) Maximum Output Transition Time, CS2 or CS3 to Output Y (Figures 3 and 4) Maximum Output Transition Time, Any Output (Figures 2 and 4) Maximum Input Rise and Fall Time Maximum Input Capacitance 500 10 500 10 500 10 pF NOTE: For propagation delays with loads other than 50 pF, and information on typical parametric values, see Chapter 2 of the ON Semiconductor High−Speed CMOS Data Book (DL129/D). Typical @ 25°C, VCC = 5.0 V 51 CPD Power Dissipation Capacitance (Per Enabled Output)* pF * Used to determine the no−load dynamic power consumption: PD = CPD VCC2 f + ICC VCC . For load considerations, see Chapter 2 of the ON Semiconductor High−Speed CMOS Data Book (DL129/D). EXPANDED LOGIC DIAGRAM 15 Y0 14 Y1 A0 1 13 Y2 A1 2 12 Y3 A2 3 11 Y4 10 CS3 CS2 5 4 9 Y5 Y6 7 Y7 CS1 6 http://onsemi.com 4 MC74HCT138A SWITCHING WAVEFORMS VALID INPUT A tPLH 1.3 V 1.3 V GND tPHL OUTPUT Y tTHL VALID 3V INPUT CS1 tPHL 90% 1.3 V 10% tTLH tr 2.7 V 1.3 V 0.3 V tPLH tf 3V GND OUTPUT Y Figure 1. Figure 2. tr INPUT CS2, CS3 tPHL OUTPUT Y tTHL 90% 1.3 V 10% 2.7 V 1.3 V 0.3 V tf 3V GND tPLH tTLH Figure 3. TEST CIRCUIT TEST POINT OUTPUT DEVICE UNDER TEST C L* *Includes all probe and jig capacitance Figure 4. http://onsemi.com 5 MC74HCT138A PACKAGE DIMENSIONS PDIP−16 N SUFFIX CASE 648−08 ISSUE T −A− 16 9 B 1 8 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION L TO CENTER OF LEADS WHEN FORMED PARALLEL. 4. DIMENSION B DOES NOT INCLUDE MOLD FLASH. 5. ROUNDED CORNERS OPTIONAL. F S C L −T− H G D 16 PL SEATING PLANE K J TA M M 0.25 (0.010) M DIM A B C D F G H J K L M S INCHES MIN MAX 0.740 0.770 0.250 0.270 0.145 0.175 0.015 0.021 0.040 0.70 0.100 BSC 0.050 BSC 0.008 0.015 0.110 0.130 0.295 0.305 0_ 10 _ 0.020 0.040 MILLIMETERS MIN MAX 18.80 19.55 6.35 6.85 3.69 4.44 0.39 0.53 1.02 1.77 2.54 BSC 1.27 BSC 0.21 0.38 2.80 3.30 7.50 7.74 0_ 10 _ 0.51 1.01 SOIC−16 D SUFFIX CASE 751B−05 ISSUE J −A− 16 9 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSIONS A AND B DO NOT INCLUDE MOLD PROTRUSION. 4. MAXIMUM MOLD PROTRUSION 0.15 (0.006) PER SIDE. 5. DIMENSION D DOES NOT INCLUDE DAMBAR PROTRUSION. ALLOWABLE DAMBAR PROTRUSION SHALL BE 0.127 (0.005) TOTAL IN EXCESS OF THE D DIMENSION AT MAXIMUM MATERIAL CONDITION. DIM A B C D F G J K M P R MILLIMETERS MIN MAX 9.80 10.00 3.80 4.00 1.35 1.75 0.35 0.49 0.40 1.25 1.27 BSC 0.19 0.25 0.10 0.25 0_ 7_ 5.80 6.20 0.25 0.50 INCHES MIN MAX 0.386 0.393 0.150 0.157 0.054 0.068 0.014 0.019 0.016 0.049 0.050 BSC 0.008 0.009 0.004 0.009 0_ 7_ 0.229 0.244 0.010 0.019 −B− 1 8 P 8 PL 0.25 (0.010) M B S G F K C −T− SEATING PLANE R X 45 _ M D 16 PL M J 0.25 (0.010) TB S A S http://onsemi.com 6 MC74HCT138A PACKAGE DIMENSIONS TSSOP−16 DT SUFFIX CASE 948F−01 ISSUE A 16X K REF NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION A DOES NOT INCLUDE MOLD FLASH. PROTRUSIONS OR GATE BURRS. MOLD FLASH OR GATE BURRS SHALL NOT EXCEED 0.15 (0.006) PER SIDE. 4. DIMENSION B DOES NOT INCLUDE INTERLEAD FLASH OR PROTRUSION. INTERLEAD FLASH OR PROTRUSION SHALL NOT EXCEED 0.25 (0.010) PER SIDE. 5. DIMENSION K DOES NOT INCLUDE DAMBAR PROTRUSION. ALLOWABLE DAMBAR PROTRUSION SHALL BE 0.08 (0.003) TOTAL IN EXCESS OF THE K DIMENSION AT MAXIMUM MATERIAL CONDITION. 6. TERMINAL NUMBERS ARE SHOWN FOR REFERENCE ONLY. 7. DIMENSION A AND B ARE TO BE DETERMINED AT DATUM PLANE −W−. MILLIMETERS MIN MAX 4.90 5.10 4.30 4.50 −−− 1.20 0.05 0.15 0.50 0.75 0.65 BSC 0.18 0.28 0.09 0.20 0.09 0.16 0.19 0.30 0.19 0.25 6.40 BSC 0_ 8_ INCHES MIN MAX 0.193 0.200 0.169 0.177 −−− 0.047 0.002 0.006 0.020 0.030 0.026 BSC 0.007 0.011 0.004 0.008 0.004 0.006 0.007 0.012 0.007 0.010 0.252 BSC 0_ 8_ 0.10 (0.004) 0.15 (0.006) T U S M TU S V S K K1 16 2X L/2 J1 B −U− L PIN 1 IDENT. 1 8 J N 0.15 (0.006) T U S 0.25 (0.010) M A −V− N F DETAIL E C 0.10 (0.004) −T− SEATING PLANE H D G DETAIL E http://onsemi.com 7 ÉÉÉ ÇÇÇ ÉÉÉ ÇÇÇ 9 SECTION N−N −W− DIM A B C D F G H J J1 K K1 L M MC74HCT138A ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). 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