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MC74HCT595ADTR2G

MC74HCT595ADTR2G

  • 厂商:

    ONSEMI(安森美)

  • 封装:

    TSSOP16_5X4.4MM

  • 描述:

    IC SHIFT REGISTER 8BIT 16TSSOP

  • 数据手册
  • 价格&库存
MC74HCT595ADTR2G 数据手册
MC74HCT595A 8-Bit Serial-Input/Serial or Parallel-Output Shift Register with Latched 3-State Outputs and LSTTL Compatible Inputs http://onsemi.com MARKING DIAGRAMS High−Performance Silicon−Gate CMOS The MC74HCT595A consists of an 8−bit shift register and an 8−bit D−type latch with three−state parallel outputs. The shift register accepts serial data and provides a serial output. The shift register also provides parallel data to the 8−bit latch. The shift register and latch have independent clock inputs. This device also has an asynchronous reset for the shift register. The HCT595A directly interfaces with the SPI serial data port on CMOS MPUs and MCUs. The device inputs are compatible with standard CMOS or LSTTL outputs. • • • 16 1 Output Drive Capability: 15 LSTTL Loads Outputs Directly Interface to CMOS, NMOS, and TTL Operating Voltage Range: 4.5 to 5.5 V Low Input Current: 1.0 mA High Noise Immunity Characteristic of CMOS Devices In Compliance with the Requirements Defined by JEDEC Standard No. 7A Chip Complexity: 328 FETs or 82 Equivalent Gates Improvements over HC595 / HCT595 − Improved Propagation Delays − 50% Lower Quiescent Power − Improved Input Noise and Latchup Immunity Pb−Free Packages are Available* HCT595AG AWLYWW 1 16 16 1 Features • • • • • • 16 SOIC−16 D SUFFIX CASE 751B HCT 595A ALYWG G TSSOP−16 DT SUFFIX CASE 948F 1 A WL, L YY, Y WW, W G, G = Assembly Location = Wafer Lot = Year = Work Week = Pb−Free Package (Note: Microdot may be in either location) ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 2 of this data sheet. *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. © Semiconductor Components Industries, LLC, 2011 March, 2011 − Rev. 1 1 Publication Order Number: MC74HCT595A/D MC74HCT595A LOGIC DIAGRAM PIN ASSIGNMENT SERIAL DATA INPUT A 15 14 1 2 QB 1 16 VCC 3 QC 2 15 QA 4 QD 3 14 A QE 4 13 OUTPUT ENABLE QF 5 12 LATCH CLOCK QG 6 11 SHIFT CLOCK QH 7 10 RESET GND 8 9 SQH SHIFT REGISTER LATCH 5 6 7 SHIFT 11 CLOCK 10 RESET LATCH 12 CLOCK OUTPUT 13 ENABLE 9 QA QB QC QD QE PARALLEL DATA OUTPUTS QF QG QH SQH SERIAL DATA OUTPUT VCC = PIN 16 GND = PIN 8 ORDERING INFORMATION Package Shipping† MC74HCT595ADG SOIC−16 (Pb−Free) 48 Units / Rail MC74HCT595ADR2G SOIC−16 (Pb−Free) 2500 Tape & Reel MC74HCT595ADTG TSSOP−16* 96 Units / Rail MC74HCT595ADTR2G TSSOP−16* (Pb−Free) 2500 Tape & Reel Device †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. *This package is inherently Pb−Free. http://onsemi.com 2 MC74HCT595A ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ MAXIMUM RATINGS Symbol Parameter Value Unit – 0.5 to + 7.0 V VCC DC Supply Voltage (Referenced to GND) Vin DC Input Voltage (Referenced to GND) – 0.5 to VCC + 0.5 V Vout DC Output Voltage (Referenced to GND) – 0.5 to VCC + 0.5 V Iin DC Input Current, per Pin ± 20 mA Iout DC Output Current, per Pin ± 35 mA ICC DC Supply Current, VCC and GND Pins ± 75 mA PD Power Dissipation in Still Air, 500 450 mW Tstg Storage Temperature – 65 to + 150 _C TL Lead Temperature, 1 mm from Case for 10 Seconds (Plastic DIP, SOIC or TSSOP Package) SOIC Package† TSSOP Package† _C 260 Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. †Derating — SOIC Package: – 7 mW/_C from 65_ to 125_C TSSOP Package: − 6.1 mW/_C from 65_ to 125_C RECOMMENDED OPERATING CONDITIONS Symbol VCC Vin, Vout Parameter DC Supply Voltage (Referenced to GND) Min Max Unit 4.5 5.5 V 0 VCC V – 55 + 125 _C 0 500 ns DC Input Voltage, Output Voltage (Referenced to GND) TA Operating Temperature Range, All Package Types tr, tf Input Rise/Fall Time (Figure 1) http://onsemi.com 3 This device contains protection circuitry to guard against damage due to high static voltages or electric fields. However, precautions must be taken to avoid applications of any voltage higher than maximum rated voltages to this high−impedance circuit. For proper operation, Vin and Vout should be constrained to the range GND v (Vin or Vout) v VCC. Unused inputs must always be tied to an appropriate logic voltage level (e.g., either GND or VCC). Unused outputs must be left open. MC74HCT595A DC ELECTRICAL CHARACTERISTICS (Voltages Referenced to GND) VCC V Guaranteed Limit – 55 to 25_C v 85_C v 125_C Unit VIH Minimum High−Level Input Voltage Vout = 0.1 V or VCC – 0.1 V |Iout| v 20 mA 4.5 to 5.5 2.0 2.0 2.0 V VIL Maximum Low−Level Input Voltage Vout = 0.1 V or VCC – 0.1 V |Iout| v 20 mA 4.5 to 5.5 0.8 0.8 0.8 V VOH Minimum High−Level Output Voltage, QA − QH Vin = VIH or VIL |Iout| v 20 mA 4.5 4.4 4.4 4.4 V 4.5 3.98 3.84 3.7 VOL Maximum Low−Level Output Voltage, QA − QH 4.5 0.1 0.1 0.1 4.5 0.26 0.33 0.4 4.5 4.4 4.4 4.4 4.5 3.98 3.84 3.7 4.5 0.1 0.1 0.1 4.5 0.26 0.33 0.4 Symbol Parameter Test Conditions Vin = VIH or VIL Vin = VIH or VIL VOH Minimum High−Level Output Voltage, SQH Maximum Low−Level Output Voltage, SQH |Iout| v 6.0 mA Vin = VIH or VIL IIoutI v 20 mA Vin = VIH or VIL VOL |Iout| v 6.0 mA Vin = VIH or VIL |Iout| v 20 mA IIoutI v 4.0 mA Vin = VIH or VIL IIoutI v 20 mA Vin = VIH or VIL IIoutI v 4.0 mA V V V Iin Maximum Input Leakage Current Vin = VCC or GND 5.5 ± 0.1 ± 1.0 ± 1.0 mA IOZ Maximum Three−State Leakage Current, QA − QH Output in High−Impedance State Vin = VIL or VIH Vout = VCC or GND 5.5 ± 0.5 ± 5.0 ± 10 mA ICC Maximum Quiescent Supply Current (per Package) Vin = VCC or GND lout = 0 mA 5.5 4.0 40 160 mA DICC Additional Quiescent Supply Current Vin = 2.4V, Any One Input Vin = VCC or GND, Other Inputs Iout = 0mA http://onsemi.com 4 5.5 ≥ −55°C 25 to 125°C 2.9 2.4 mA MC74HCT595A AC ELECTRICAL CHARACTERISTICS (CL = 50 pF, Input tr = tf = 6.0 ns) VCC V Guaranteed Limit – 55 to 25_C v 85_C v 125_C Unit fmax Maximum Clock Frequency (50% Duty Cycle) (Figures 1 and 7) 4.5 to 5.5 30 24 20 MHz tPLH, tPHL Maximum Propagation Delay, Shift Clock to SQH (Figures 1 and 7) 4.5 to 5.5 28 35 42 ns tPHL Maximum Propagation Delay, Reset to SQH (Figures 2 and 7) 4.5 to 5.5 29 36 44 ns tPLH, tPHL Maximum Propagation Delay, Latch Clock to QA − QH (Figures 3 and 7) 4.5 to 5.5 28 35 42 ns tPLZ, tPHZ Maximum Propagation Delay, Output Enable to QA − QH (Figures 4 and 8) 4.5 to 5.5 30 38 45 ns tPZL, tPZH Maximum Propagation Delay, Output Enable to QA − QH (Figures 4 and 8) 4.5 to 5.5 27 34 41 ns tTLH, tTHL Maximum Output Transition Time, QA − QH (Figures 3 and 7) 4.5 to 5.5 12 15 18 ns tTLH, tTHL Maximum Output Transition Time, SQH (Figures 1 and 7) 4.5 to 5.5 15 19 22 ns Symbol Parameter Cin Maximum Input Capacitance — 10 10 10 pF Cout Maximum Three−State Output Capacitance (Output in High−Impedance State), QA − QH — 15 15 15 pF Typical @ 25°C, VCC = 5.0 V CPD 300 Power Dissipation Capacitance (Per Package)* * Used to determine the no−load dynamic power consumption: P D = CPD VCC 2f pF + ICC VCC . ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ TIMING REQUIREMENTS (Input tr = tf = 6.0 ns) Symbol VCC V Parameter Guaranteed Limit 25_C to –55_C v 85_C v 125_C Unit tsu Minimum Setup Time, Serial Data Input A to Shift Clock (Figure 5) 4.5 to 5.5 10 13 15 ns tsu Minimum Setup Time, Shift Clock to Latch Clock (Figure 6) 4.5 to 5.5 15 19 22 ns th Minimum Hold Time, Shift Clock to Serial Data Input A (Figure 5) 4.5 to 5.5 5.0 5.0 5.0 ns trec Minimum Recovery Time, Reset Inactive to Shift Clock (Figure 2) 4.5 to 5.5 10 13 15 ns tw Minimum Pulse Width, Reset (Figure 2) 4.5 to 5.5 12 15 18 ns tw Minimum Pulse Width, Shift Clock (Figure 1) 4.5 to 5.5 10 13 15 ns tw Minimum Pulse Width, Latch Clock (Figure 6) 4.5 to 5.5 10 13 15 ns tr, tf Maximum Input Rise and Fall Times (Figure 1) 4.5 to 5.5 500 500 500 ns http://onsemi.com 5 MC74HCT595A FUNCTION TABLE Inputs Operation Reset Resulting Function Serial Input A Shift Clock Latch Clock Output Enable Shift Register Contents Latch Register Contents Serial Output SQH Parallel Outputs QA − QH Reset shift register L X X L, H, ↓ L L U L U Shift data into shift register H D ↑ L, H, ↓ L D → SRA; SRN → SRN+1 U SRG → SRH U Shift register remains unchanged H X L, H, ↓ L, H, ↓ L U U U U Transfer shift register contents to latch register H X L, H, ↓ ↑ L U SRN → LRN U SRN Latch register remains unchanged X X X L, H, ↓ L * U * U Enable parallel outputs X X X X L * ** * Enabled Force outputs into high impedance state X X X X H * ** * Z SR = shift register contents LR = latch register contents D = data (L, H) logic level U = remains unchanged ↑ = Low−to−High ↓ = High−to−Low * = depends on Reset and Shift Clock inputs ** = depends on Latch Clock input PIN DESCRIPTIONS INPUTS A (Pin 14) Output Enable (Pin 13) Active−low Output Enable. A low on this input allows the data from the latches to be presented at the outputs. A high on this input forces the outputs (QA−QH) into the high−impedance state. The serial output is not affected by this control unit. Serial Data Input. The data on this pin is shifted into the 8−bit serial shift register. CONTROL INPUTS Shift Clock (Pin 11) Shift Register Clock Input. A low− to−high transition on this input causes the data at the Serial Input pin to be shifted into the 8−bit shift register. OUTPUTS QA − QH (Pins 15, 1, 2, 3, 4, 5, 6, 7) Reset (Pin 10) SQH (Pin 9) Noninverted, 3−state, latch outputs. Active−low, Asynchronous, Shift Register Reset Input. A low on this pin resets the shift register portion of this device only. The 8−bit latch is not affected. Noninverted, Serial Data Output. This is the output of the eighth stage of the 8−bit shift register. This output does not have three−state capability. Latch Clock (Pin 12) Storage Latch Clock Input. A low−to−high transition on this input latches the shift register data. http://onsemi.com 6 MC74HCT595A SWITCHING WAVEFORMS (VI = 0 to 3 V, VM = 1.3 V) tr SHIFT CLOCK (VI) tw tf VCC VCC 90% VM 10% tw RESET (VI) GND 1/fmax OUTPUT SQH 90% 50% 10% tTLH GND tPHL 50% OUTPUT SQH tPHL tPLH VM trec VCC SHIFT CLOCK (VI) tTHL VM GND Figure 1. LATCH CLOCK (VI) Figure 2. OUTPUT ENABLE VCC VM VCC 50% GND GND tPLH tPHL OUTPUT Q OUTPUT Q tTLH 10% VOL 90% VOH HIGH IMPEDANCE tTHL Figure 4. VCC SHIFT CLOCK (VI) VALID VCC VM VM GND tsu GND LATCH CLOCK (VI) th VCC SWITCH CLOCK (VI) tPHZ 50% Figure 3. tsu HIGH IMPEDANCE 50% tPZH 90% QA-QH 50% OUTPUTS 10% SERIAL INPUT A (VI) tPLZ tPZL VM VCC VM GND tw GND Figure 6. Figure 5. TEST CIRCUITS TEST POINT TEST POINT OUTPUT DEVICE UNDER TEST OUTPUT DEVICE UNDER TEST CL* *Includes all probe and jig capacitance 1 kW CL* CONNECT TO VCC WHEN TESTING tPLZ AND tPZL. CONNECT TO GND WHEN TESTING tPHZ AND tPZH. *Includes all probe and jig capacitance Figure 7. Figure 8. http://onsemi.com 7 MC74HCT595A EXPANDED LOGIC DIAGRAM OUTPUT ENABLE 13 LATCH CLOCK 12 SERIAL DATA INPUT A 14 D Q D SRA Q 15 QA LRA R Q D D SRB Q 1 QB LRB R Q D D SRC Q 2 QC LRC R Q D D SRD Q 3 QD LRD PARALLEL DATA OUTPUTS R Q D D SRE Q 4 QE LRE R Q D D SRF Q 5 QF LRF R Q D D SRG Q 6 QG LRG R SHIFT CLOCK Q D 11 D SRH Q 7 QH LRH R RESET 10 9 http://onsemi.com 8 SERIAL DATA OUTPUT SQH MC74HCT595A TIMING DIAGRAM SHIFT CLOCK SERIAL DATA INPUT A RESET LATCH CLOCK OUTPUT ENABLE QA QB QC QD QE QF QG QH SERIAL DATA OUTPUT SQH NOTE: implies that the output is in a high−impedance state. http://onsemi.com 9 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS SOIC−16 CASE 751B−05 ISSUE K DATE 29 DEC 2006 SCALE 1:1 −A− 16 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSIONS A AND B DO NOT INCLUDE MOLD PROTRUSION. 4. MAXIMUM MOLD PROTRUSION 0.15 (0.006) PER SIDE. 5. DIMENSION D DOES NOT INCLUDE DAMBAR PROTRUSION. ALLOWABLE DAMBAR PROTRUSION SHALL BE 0.127 (0.005) TOTAL IN EXCESS OF THE D DIMENSION AT MAXIMUM MATERIAL CONDITION. 9 −B− 1 P 8 PL 0.25 (0.010) 8 M B S G R K F X 45 _ C −T− SEATING PLANE J M D DIM A B C D F G J K M P R MILLIMETERS MIN MAX 9.80 10.00 3.80 4.00 1.35 1.75 0.35 0.49 0.40 1.25 1.27 BSC 0.19 0.25 0.10 0.25 0_ 7_ 5.80 6.20 0.25 0.50 INCHES MIN MAX 0.386 0.393 0.150 0.157 0.054 0.068 0.014 0.019 0.016 0.049 0.050 BSC 0.008 0.009 0.004 0.009 0_ 7_ 0.229 0.244 0.010 0.019 16 PL 0.25 (0.010) M T B S A S STYLE 1: PIN 1. 2. 3. 4. 5. 6. 7. 8. 9. 10. 11. 12. 13. 14. 15. 16. COLLECTOR BASE EMITTER NO CONNECTION EMITTER BASE COLLECTOR COLLECTOR BASE EMITTER NO CONNECTION EMITTER BASE COLLECTOR EMITTER COLLECTOR STYLE 2: PIN 1. 2. 3. 4. 5. 6. 7. 8. 9. 10. 11. 12. 13. 14. 15. 16. CATHODE ANODE NO CONNECTION CATHODE CATHODE NO CONNECTION ANODE CATHODE CATHODE ANODE NO CONNECTION CATHODE CATHODE NO CONNECTION ANODE CATHODE STYLE 3: PIN 1. 2. 3. 4. 5. 6. 7. 8. 9. 10. 11. 12. 13. 14. 15. 16. COLLECTOR, DYE #1 BASE, #1 EMITTER, #1 COLLECTOR, #1 COLLECTOR, #2 BASE, #2 EMITTER, #2 COLLECTOR, #2 COLLECTOR, #3 BASE, #3 EMITTER, #3 COLLECTOR, #3 COLLECTOR, #4 BASE, #4 EMITTER, #4 COLLECTOR, #4 STYLE 4: PIN 1. 2. 3. 4. 5. 6. 7. 8. 9. 10. 11. 12. 13. 14. 15. 16. STYLE 5: PIN 1. 2. 3. 4. 5. 6. 7. 8. 9. 10. 11. 12. 13. 14. 15. 16. DRAIN, DYE #1 DRAIN, #1 DRAIN, #2 DRAIN, #2 DRAIN, #3 DRAIN, #3 DRAIN, #4 DRAIN, #4 GATE, #4 SOURCE, #4 GATE, #3 SOURCE, #3 GATE, #2 SOURCE, #2 GATE, #1 SOURCE, #1 STYLE 6: PIN 1. 2. 3. 4. 5. 6. 7. 8. 9. 10. 11. 12. 13. 14. 15. 16. CATHODE CATHODE CATHODE CATHODE CATHODE CATHODE CATHODE CATHODE ANODE ANODE ANODE ANODE ANODE ANODE ANODE ANODE STYLE 7: PIN 1. 2. 3. 4. 5. 6. 7. 8. 9. 10. 11. 12. 13. 14. 15. 16. SOURCE N‐CH COMMON DRAIN (OUTPUT) COMMON DRAIN (OUTPUT) GATE P‐CH COMMON DRAIN (OUTPUT) COMMON DRAIN (OUTPUT) COMMON DRAIN (OUTPUT) SOURCE P‐CH SOURCE P‐CH COMMON DRAIN (OUTPUT) COMMON DRAIN (OUTPUT) COMMON DRAIN (OUTPUT) GATE N‐CH COMMON DRAIN (OUTPUT) COMMON DRAIN (OUTPUT) SOURCE N‐CH COLLECTOR, DYE #1 COLLECTOR, #1 COLLECTOR, #2 COLLECTOR, #2 COLLECTOR, #3 COLLECTOR, #3 COLLECTOR, #4 COLLECTOR, #4 BASE, #4 EMITTER, #4 BASE, #3 EMITTER, #3 BASE, #2 EMITTER, #2 BASE, #1 EMITTER, #1 SOLDERING FOOTPRINT 8X 6.40 16X 1 1.12 16 16X 0.58 1.27 PITCH 8 9 DIMENSIONS: MILLIMETERS DOCUMENT NUMBER: DESCRIPTION: 98ASB42566B SOIC−16 Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the rights of others. © Semiconductor Components Industries, LLC, 2019 www.onsemi.com MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS TSSOP−16 CASE 948F−01 ISSUE B 16 DATE 19 OCT 2006 1 SCALE 2:1 16X K REF 0.10 (0.004) 0.15 (0.006) T U M T U S V S K S ÉÉÉ ÇÇÇ ÇÇÇ ÉÉÉ K1 2X L/2 16 9 J1 B −U− L SECTION N−N J PIN 1 IDENT. N 8 1 0.25 (0.010) M 0.15 (0.006) T U S A −V− NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION A DOES NOT INCLUDE MOLD FLASH. PROTRUSIONS OR GATE BURRS. MOLD FLASH OR GATE BURRS SHALL NOT EXCEED 0.15 (0.006) PER SIDE. 4. DIMENSION B DOES NOT INCLUDE INTERLEAD FLASH OR PROTRUSION. INTERLEAD FLASH OR PROTRUSION SHALL NOT EXCEED 0.25 (0.010) PER SIDE. 5. DIMENSION K DOES NOT INCLUDE DAMBAR PROTRUSION. ALLOWABLE DAMBAR PROTRUSION SHALL BE 0.08 (0.003) TOTAL IN EXCESS OF THE K DIMENSION AT MAXIMUM MATERIAL CONDITION. 6. TERMINAL NUMBERS ARE SHOWN FOR REFERENCE ONLY. 7. DIMENSION A AND B ARE TO BE DETERMINED AT DATUM PLANE −W−. N F DETAIL E −W− C 0.10 (0.004) −T− SEATING PLANE D H G DETAIL E DIM A B C D F G H J J1 K K1 L M MILLIMETERS MIN MAX 4.90 5.10 4.30 4.50 −−− 1.20 0.05 0.15 0.50 0.75 0.65 BSC 0.18 0.28 0.09 0.20 0.09 0.16 0.19 0.30 0.19 0.25 6.40 BSC 0_ 8_ INCHES MIN MAX 0.193 0.200 0.169 0.177 −−− 0.047 0.002 0.006 0.020 0.030 0.026 BSC 0.007 0.011 0.004 0.008 0.004 0.006 0.007 0.012 0.007 0.010 0.252 BSC 0_ 8_ GENERIC MARKING DIAGRAM* SOLDERING FOOTPRINT 7.06 16 XXXX XXXX ALYW 1 1 0.65 PITCH 16X 0.36 DOCUMENT NUMBER: DESCRIPTION: 16X 1.26 98ASH70247A TSSOP−16 DIMENSIONS: MILLIMETERS XXXX A L Y W G or G = Specific Device Code = Assembly Location = Wafer Lot = Year = Work Week = Pb−Free Package *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “ G”, may or may not be present. Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the rights of others. © Semiconductor Components Industries, LLC, 2019 www.onsemi.com onsemi, , and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of onsemi’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. onsemi reserves the right to make changes at any time to any products or information herein, without notice. The information herein is provided “as−is” and onsemi makes no warranty, representation or guarantee regarding the accuracy of the information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using onsemi products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. onsemi does not convey any license under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and hold onsemi and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Email Requests to: orderlit@onsemi.com onsemi Website: www.onsemi.com ◊ TECHNICAL SUPPORT North American Technical Support: Voice Mail: 1 800−282−9855 Toll Free USA/Canada Phone: 011 421 33 790 2910 Europe, Middle East and Africa Technical Support: Phone: 00421 33 790 2910 For additional information, please contact your local Sales Representative
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