MCH6321-TL-W

Ordering number : ENA0963B MCH6321 P-Channel Power MOSFET –20V, –4A, 83mΩ, Single MCPH6 http://onsemi.com Features • 1.8V drive • Protection diode in Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS --20 Gate-to-Source Voltage VGSS ±10 V V Drain Current (DC) ID --4 A Drain Current (Pulse) IDP PW≤10μs, duty cycle≤1% --16 A Allowable Power Dissipation When mounted on ceramic substrate (1200mm2×0.8mm) 1.5 W Channel Temperature PD Tch 150 °C Storage Temperature Tstg --55 to +150 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. Package Dimensions Product & Package Information unit : mm (typ) 7022A-009 • Package : MCPH6 • JEITA, JEDEC : SC-88, SC-70-6, SOT-363 • Minimum Packing Quantity : 3,000 pcs./reel 6 5 4 0 to 0.02 1 2 0.3 0.85 1 6 2 5 3 4 JV TL 3 0.65 Marking LOT No. 0.25 Packing Type : TL LOT No. 0.07 MCH6321-TL-E MCH6321-TL-W 0.15 2.1 1.6 0.25 2.0 Electrical Connection 1 : Drain 2 : Drain 3 : Gate 4 : Source 5 : Drain 6 : Drain 1, 2, 5, 6 3 MCPH6 4 ORDERING INFORMATION See detailed ordering and shipping information on page 2 of this data sheet. Semiconductor Components Industries, LLC, 2014 March, 2014 32514HK TC-00002975/62012TKIM/N1407TIIM PE No. A0963-1/5 MCH6321 Electrical Characteristics at Ta=25°C Parameter Symbol Zero-Gate Voltage Drain Current Drain-to-Source Breakdown Voltage V(BR)DSS IDSS Gate-to-Source Leakage Current Cutoff Voltage Conditions Ratings min --20 IGSS ID=--1mA, VGS=0V VDS=--20V, VGS=0V VGS=±8V, VDS=0V VGS(off) VDS=--10V, ID=--1mA --0.4 Forward Transfer Admittance | yfs | VDS=--10V, ID=--2A Static Drain-to-Source On-State Resistance RDS(on)1 RDS(on)2 ID=--2A, VGS=--4.5V ID=--1A, VGS=--2.5V RDS(on)3 ID=--0.2A, VGS=--1.8V Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time 2.5 typ Unit max V --1 mA ±10 mA --1.3 4.3 V S 63 83 88 125 130 200 mW mW mW 375 pF 77 pF Crss 58 pF td(on) tr 8.1 ns 31 ns 40 ns Fall Time td(off) tf Total Gate Charge Qg Gate-to-Source Charge Qgs Gate-to-Drain “Miller” Charge Qgd Diode Forward Voltage VSD VDS=--10V, f=1MHz See specified Test Circuit. VDS=--10V, VGS=--4.5V, ID=--4A 39 ns 4.6 nC 0.8 nC 1.3 IS=--4A, VGS=0V --0.86 nC --1.2 V Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. Switching Time Test Circuit 0V --4V VDD= --10V VIN ID= --2A RL=5Ω VIN D PW=10μs D.C.≤1% VOUT G MCH6321 P.G 50Ω S Ordering Information Device MCH6321-TL-E MCH6321-TL-W Package MCPH6 Shipping 3,000pcs./reel memo Pb-Free Pb-Free and Halogen Free No. A0963-2/5 MCH6321 ID -- VDS 8V --0.1 --0.2 --0.3 --0.6 --0.7 --0.8 --0.9 Drain-to-Source Voltage, VDS -- V RDS(on) -- VGS Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ --1.0A --2.0A 50 0 --1 --2 --3 --4 --5 --6 --7 Gate-to-Source Voltage, VGS -- V | yfs | -- ID IT13026 2 = Ta 1.0 C 5° --2 75 °C °C 25 7 5 2 0.1 --0.01 2 3 5 7 --0.1 2 3 5 7 --1.0 2 Drain Current, ID -- A SW Time -- ID 2 3 5 7 --10 IT13012 50 --40 --20 7 5 td (off) tf 3 2 tr td(on) 10 7 2 3 5 7 --1.0 0 20 40 60 80 100 Ambient Temperature, Ta -- °C --2.5 IT13009 120 IS -- VSD 140 160 IT13027 VGS=0V --1.0 7 5 3 2 --0.1 7 5 3 2 0 --0.2 --0.4 --0.6 --0.8 --1.0 Diode Forward Voltage, VSD -- V Ciss, Coss, Crss -- VDS 1000 7 5 100 5 --0.1 100 --0.001 VDD= --10V VGS= --4V --2.0 2A = --0. 8V, I D . 1 -= VGS --1.0A , I D= V .5 2 -V GS= --2.0A V, I D= .5 4 -V GS= 150 --0.01 7 5 3 2 3 --1.5 200 --10 7 5 3 2 5 3 --1.0 Gate-to-Source Voltage, VGS -- V RDS(on) -- Ta 0 --60 --8 VDS= --10V 7 --0.5 250 Ta=25°C 200 100 0 IT13008 250 ID= --0.2A 0 --1.0 Source Current, IS -- A Forward Transfer Admittance, | yfs | -- S --0.5 Ciss, Coss, Crss -- pF Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ --0.4 Ta=7 5°C 25°C --25° C 0 10 Switching Time, SW Time -- ns 25°C VGS= --1.0V 300 0 --2 --1 --0.5 150 --25° C --1.0 --3 Ta=7 5°C Drain Current, ID -- A --3. 0V --1.5V --1.5 0 VDS= --10V --1 . --4.5V --2.0 ID -- VGS --5 --4 --8.0V --2.5 Drain Current, ID -- A --2. 5V --3.0 --1.2 IT13013 f=1MHz Ciss 3 2 100 Coss Crss 7 5 3 2 Drain Current, ID -- A 3 5 7 --10 IT13014 2 0 --2 --4 --6 --8 --10 --12 --14 --16 Drain-to-Source Voltage, VDS -- V --18 --20 IT13015 No. A0963-3/5 MCH6321 VGS -- Qg VDS= --10V ID= --4A --4.0 --3.5 --3.0 --2.5 --2.0 --1.5 --1.0 --10 7 5 3 2 0 1 2 3 4 Total Gate Charge, Qg -- nC 5 IT13028 PD -- Ta 1.6 ASO IDP= --16A ID= --4A DC --1.0 7 5 3 2 --0.1 7 5 3 2 --0.5 0 op 10 10 ms 0m era tio Operation in this area is limited by RDS(on). PW≤10µs 10 0µ 1m s s s n( Ta = 25 °C ) Ta=25°C Single pulse Mounted on a ceramic board (1200mm2×0.8mm) --0.01 --0.01 2 3 5 7 --0.1 2 3 5 7 --1.0 2 3 5 7 --10 Drain-to-Source Voltage, VDS -- V 2 3 IT13029 1.5 1.4 ou M 1.2 nt ed on 1.0 am er ac ic 0.8 d ar bo 0.6 m 0m 20 (1 0.4 8m 0. 2× 0.2 ) 0 m Allowable Power Dissipation, PD -- W 3 2 Drain Current, ID -- A Gate-to-Source Voltage, VGS -- V --4.5 0 20 40 60 80 100 120 Ambient Temperature, Ta -- °C 140 160 IT13030 No. A0963-4/5 MCH6321 Outline Drawing MCH6321-TL-E, MCH6321-TL-W Land Pattern Example Mass (g) Unit 0.008 mm * For reference Unit: mm 2.1 0.6 0.4 0.65 0.65 Note on usage : Since the MCH6321 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. ON Semiconductor and the ON logo are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. 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