MCT5211TVM

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This literature is subject to all applicable copyright laws and is not for resale in any manner. MCT5210M, MCT5211M 6-Pin DIP Low Input Current Phototransistor Optocouplers Features Description ■ High CTRCE(SAT) Comparable to Darlingtons The MCT5210M and MCT5211M devices consist of a high-efficiency AlGaAs infrared emitting diode coupled with an NPN phototransistor in a six-pin dual-in-line package. ■ High Common Mode Transient Rejection: 5 kV/µs ■ Data Rates Up to 150 kbits/s (NRZ) ■ Safety and Regulatory Approvals: – UL1577, 4,170 VACRMS for 1 Minute – DIN-EN/IEC60747-5-5, 850 V Peak Working Insulation Voltage Applications ■ CMOS to CMOS/LSTTL Logic Isolation ■ LSTTL to CMOS/LSTTL Logic Isolation The devices are well suited for CMOS to LSTT/TTL interfaces, offering 250% CTRCE(SAT) with 1 mA of LED input current. With an LED input current of 1.6 mA, data rates to 20K bits/s are possible. Both can easily interface LSTTL to LSTTL/TTL, and with use of an external base-to-emitter resistor data rates of 100K bits/s can be achieved. ■ RS-232 Line Receiver ■ Telephone Ring Detector ■ AC Line Voltage Sensing ■ Switching Power Supply Schematic ANODE 1 CATHODE 2 Package Outlines 6 BASE 5 COLLECTOR 3 4 EMITTER Figure 2. Package Outlines Figure 1. Schematic ©1983 Fairchild Semiconductor Corporation MCT5210M, MCT5211M Rev. 1.3 www.fairchildsemi.com MCT5210M, MCT5211M — 6-Pin DIP Low Input Current Phototransistor Optocouplers April 2015 As per DIN EN/IEC 60747-5-5, this optocoupler is suitable for “safe electrical insulation” only within the safety limit data. Compliance with the safety ratings shall be ensured by means of protective circuits. Parameter Installation Classifications per DIN VDE 0110/1.89 Table 1, For Rated Mains Voltage Characteristics < 150 VRMS I–IV < 300 VRMS I–IV Climatic Classification 55/100/21 Pollution Degree (DIN VDE 0110/1.89) 2 Comparative Tracking Index Symbol 175 Value Unit Input-to-Output Test Voltage, Method A, VIORM x 1.6 = VPR, Type and Sample Test with tm = 10 s, Partial Discharge < 5 pC 1360 Vpeak Input-to-Output Test Voltage, Method B, VIORM x 1.875 = VPR, 100% Production Test with tm = 1 s, Partial Discharge < 5 pC 1594 Vpeak VIORM Maximum Working Insulation Voltage 850 Vpeak VIOTM Highest Allowable Over-Voltage VPR Parameter 6000 Vpeak External Creepage ≥7 mm External Clearance ≥7 mm External Clearance (for Option TV, 0.4" Lead Spacing) ≥ 10 mm DTI Distance Through Insulation (Insulation Thickness) ≥ 0.5 mm TS Case Temperature(1) 175 °C IS,INPUT Current(1) 350 mA 800 mW Input PS,OUTPUT Output RIO Power(1) Insulation Resistance at TS, VIO = 500 V(1) > 109 Ω Note: 1. Safety limit values – maximum values allowed in the event of a failure. ©1983 Fairchild Semiconductor Corporation MCT5210M, MCT5211M Rev. 1.3 www.fairchildsemi.com 2 MCT5210M, MCT5211M — 6-Pin DIP Low Input Current Phototransistor Optocouplers Safety and Insulation Ratings Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only. Symbol Parameters Value Unit -40 to +125 °C Operating Temperature -40 to +100 °C Junction Temperature -40 to +125 ºC 260 for 10 seconds °C Total Device Power Dissipation @ 25°C (LED plus detector) 225 mW Derate Linearly From 25°C 3.5 mW/°C IF Continuous Forward Current 50 mA VR Reverse Input Voltage 6 V TOTAL DEVICE TSTG TOPR TJ TSOL PD Storage Temperature Lead Solder Temperature EMITTER IF(pk) PD Forward Current – Peak (1 µs pulse, 300 pps) 3.0 A LED Power Dissipation @ 25°C 75 mW Derate Linearly From 25°C 1.0 mW/°C DETECTOR IC PD Continuous Collector Current 150 mA Detector Power Dissipation @ 25°C 150 mW Derate Linearly From 25°C 2.0 mW/°C ©1983 Fairchild Semiconductor Corporation MCT5210M, MCT5211M Rev. 1.3 www.fairchildsemi.com 3 MCT5210M, MCT5211M — 6-Pin DIP Low Input Current Phototransistor Optocouplers Absolute Maximum Ratings TA = 25°C unless otherwise specified. Individual Component Characteristics Symbol Parameters Test Conditions Min. Typ. Max. Unit 1.50 V EMITTER VF Input Forward Voltage IF = 5 mA 1.25 ΔVF ΔTA Forward Voltage Temperature Coefficient IF = 2 mA -1.75 VR Reverse Voltage IR = 10 µA CJ Junction Capacitance VF = 0 V, f = 1.0 MHz mV/°C 6 V 18 pF DETECTOR BVCEO Breakdown Voltage, Collector-to-Emitter IC = 1.0 mA, IF = 0 30 100 V BVCBO Breakdown Voltage, Collector-to-Base IC = 10 µA, IF = 0 30 120 V BVEBO Breakdown Voltage, Emitter-to-Base IE = 10 µA, IF = 0 5 10 V ICER Dark Current, Collector-to-Emitter VCE = 10 V, IF = 0, RBE = 1 MΩ 1 100 nA CCE Capacitance, Collector-to-Emitter VCE = 0, f = 1 MHz 10 pF CCB Capacitance, Collector-to-Base VCB = 0, f = 1 MHz 80 pF CEB Capacitance, Emitter-to-Base VEB = 0, f = 1 MHz 15 pF ©1983 Fairchild Semiconductor Corporation MCT5210M, MCT5211M Rev. 1.3 www.fairchildsemi.com 4 MCT5210M, MCT5211M — 6-Pin DIP Low Input Current Phototransistor Optocouplers Electrical Characteristics TA = 25°C unless otherwise specified. Transfer Characteristics Symbol Characteristics Test Conditions Device Min. Typ. Max. Unit DC CHARACTERISTICS Saturated Current CTRCE(SAT) Transfer Ratio Collector-to-Emitter(2) CTR(CE) CTR(CB) VCE(SAT) IF = 3.0 mA, VCE = 0.4 V IF = 1.6 mA, VCE = 0.4 V IF = 1.0 mA, VCE = 0.4 V IF = 3.0 mA, VCE = 5.0 V Current Transfer Ratio = 1.6 mA, VCE = 5.0 V I Collector-to-Emitter(2) F IF = 1.0 mA, VCE = 5.0 V IF = 3.0 mA, VCE = 4.3 V Current Transfer Ratio IF = 1.6 mA, VCE = 4.3 V Collector-to-Base(3) IF = 1.0 mA, VCE = 4.3 V Saturation Voltage MCT5210M MCT5211M MCT5210M MCT5211M MCT5210M MCT5211M 60 % 100 % 75 % 70 % 150 % 110 % 0.2 % 0.3 % 0.25 % IF = 3.0 mA, ICE = 1.8 mA MCT5210M 0.4 V IF = 1.6 mA, ICE = 1.6 mA MCT5211M 0.4 V AC CHARACTERISTICS RL = 330 Ω, RBE = ∞ TPHL Propagation Delay HIGH-to-LOW(4) IF = 3.0 mA, MCT5210M RL = 3.3 kΩ, RBE = 39 kΩ VCC = 5.0 V 10 µs 7 µs RL = 750 Ω, RBE = ∞ 14 µs IF = 1.6 mA, V RL = 4.7 kΩ, RBE = 91 kΩ CC = 5.0 V 15 µs IF = 1.0 mA, RL = 10 kΩ, RBE = 160 kΩ VCC = 5.0 V 17 µs 24 µs RL = 330 Ω, RBE = ∞ IF = 3.0 mA, MCT5210M V RL = 3.3 kΩ, RBE = 39 kΩ CC = 5.0 V 0.4 µs 8 µs RL = 750 Ω, RBE = ∞ 2.5 µs 11 µs 7 µs 16 µs RL = 1.5 kΩ, RBE = ∞ TPLH Propagation Delay LOW-to-HIGH(5) IF = 1.6 mA, RL = 4.7 kΩ, RBE = 91 kΩ VCC = 5.0 V RL = 1.5 kΩ, RBE = ∞ IF = 1.0 mA, RL = 10 kΩ, RBE = 160 kΩ VCC = 5.0 V MCT5211M MCT5211M Notes: 2. DC Current Transfer Ratio (CTRCE) is defined as the transistor collector current (ICE) divided by the input LED current (IF) x 100%, at a specified voltage between the collector and emitter (VCE). 3. The collector base Current Transfer Ratio (CTRCB) is defined as the transistor collector base photocurrent (ICB) divided by the input LED current (IF) time 100%. 4. Referring to Figure 16 the TPHL propagation delay is measured from the 50% point of the rising edge of the data input pulse to the 1.3 V point on the falling edge of the output pulse. 5. Referring to Figure 16 the TPLH propagation delay is measured from the 50% point of the falling edge of data input pulse to the 1.3 V point on the rising edge of the output pulse. ©1983 Fairchild Semiconductor Corporation MCT5210M, MCT5211M Rev. 1.3 www.fairchildsemi.com 5 MCT5210M, MCT5211M — 6-Pin DIP Low Input Current Phototransistor Optocouplers Electrical Characteristics (Continued) TA = 25°C unless otherwise specified. Isolation Characteristics Symbol Characteristic Test Conditions Min. Typ. Max. Unit VISO Input-Output Isolation Voltage(6) t = 1 Minute 4170 RISO Isolation Resistance(6) VI-O = ±500 VDC, TA = 25°C 1011 CISO Isolation Capacitance(7) VI-O = 0 V, f = 1 MHz CMH Common Mode Transient Rejection – Output HIGH VCM = 50 VP-P, RL= 750 Ω, IF = 0 5000 V/µs CML Common Mode Transient Rejection – Output LOW VCM = 50 VP-P, RL = 750 Ω, IF =1.6 mA 5000 V/µs VACRMS Ω 0.4 0.6 pF Notes: 6. Device considered a two terminal device: pins 1, 2, and 3 shorted together and pins 5, 6 and 7 are shorted together. 7. CISO is the capacitance between the input (pins 1, 2, 3 connected) and the output (pin 4, 5, 6 connected). ©1983 Fairchild Semiconductor Corporation MCT5210M, MCT5211M Rev. 1.3 www.fairchildsemi.com 6 MCT5210M, MCT5211M — 6-Pin DIP Low Input Current Phototransistor Optocouplers Electrical Characteristics (Continued) NORMALIZED CURRENT TRANSFER RATIO VF – FORWARD VOLTAGE (V) 2.0 1.8 1.6 1.4 TA = -40°C 1.2 TA = 25°C 1.0 0.8 0.1 TA = 100°C 1 10 IF – LED FORWARD CURRENT (mA) 100 1.0 IF = 5 mA 0.8 IF = 2 mA 0.6 IF = 1 mA 0.4 IF = 0.5 mA 0.2 IF = 0.2 mA 0.0 -40 NORMALIZED ICE – COLLECTOR-EMITTER CURRENT NORMALIZED CURRENT TRANSFER RATIO 1.4 1.2 -20 -20 0 20 40 60 100 1.2 1.0 0.8 0.6 0.4 Normalized to: IF = 5 mA VCE = 5 V TA = 25°C 0.2 0.0 0.1 10 IF = 10 mA 1 IF = 5 mA IF = 2 mA 0.1 IF = 1 mA IF = 0. 5mA 0.01 IF = 0.2 mA 0.0001 0.1 120 1 10 VCE – COLLECTOR-EMITTER VOLTAGE (V) Figure 6. Normalized Collector vs. Collector-Emitter Voltage Figure 5. Normalized CTR vs. Temperature 100 10 NORMALIZED COLLECTOR-BASE CURRENT NORMALIZED ICB – COLLECTOR-BASE PHOTO CURRENT Normalized to: IF = 5 mA VCE = 5 V TA = 25°C 0.001 TA – AMBIENT TEMPERATURE (°C) 10 1 Normalized to: IF = 5 mA VCB = 4.3 V TA = 25°C 0.1 0.01 0.1 1 10 IF – FORWARD CURRENT (mA) Figure 4. Normalized Current Transfer Ratio vs. Forward Current Figure 3. LED Forward Voltage vs. Forward Current Normalized to: IF = 5 mA VCE = 5 V TA = 25°C IF = 10 mA 1.4 1 10 100 IF = 5 mA 1 IF = 2 mA 0.1 IF = 1 mA IF = 0.5 mA 0.01 Normalized to: IF = 0.2 mA IF = 5 mA VCB = 4.3 V TA = 25°C 0.001 -60 -40 -20 0 20 40 60 80 100 TA – AMBIENT TEMPERATURE (°C) IF – FORWARD CURRENT (mA) Figure 7. Normalized Collector Base Photocurrent Ratio vs. Forward Current ©1983 Fairchild Semiconductor Corporation MCT5210M, MCT5211M Rev. 1.3 IF = 10 mA Figure 8. Normalized Collector-Base Current vs. Temperature www.fairchildsemi.com 7 MCT5210M, MCT5211M — 6-Pin DIP Low Input Current Phototransistor Optocouplers Typical Performance Curves 30 IF = 0 mA VCE = 10 V t – SWITCHING TIME (μs) ICEO – DARK CURRENT (nA) 10000 1000 100 10 1 RBE = 330 kΩ 20 tf ts 10 5 0 10 20 30 40 50 60 70 80 90 TA – AMBIENT TEMPERATURE (°C) 0 -40 100 -20 20 40 60 80 100 120 20 t – SWITCHING TIME (μs) IF = 10 mA Refer to Figure 15 for switching time circuit VCC = 5 V RL = 1 kΩ RBE = 100 kΩ 20 tf tPLH 15 10 ts 5 tr 0 -40 -20 tPHL 0 20 40 16 IF = 5 mA Refer to Figure 15 for switching time circuit VCC = 5 V RL = 1 kΩ RBE = 330 kΩ tf 12 tPLH ts 8 4 tPHL tr td td 60 80 100 0 -40 120 TA – AMBIENT TEMPERATURE (°C) -20 0 20 40 60 80 100 120 TA – AMBIENT TEMPERATURE (°C) Figure 12. Switching Time vs. Ambient Temperature Figure 11. Switching Time vs. Ambient Temperature 20 100 IF = 5 mA Refer to Figure 15 for switching time circuit VCC = 5 V RL = 1 kΩ RBE = 100 kΩ t – SWITCHING TIME (μs) 16 0 td Figure 10. Switching Time vs. Ambient Temperature 30 25 tPHL TA – AMBIENT TEMPERATURE (°C) Figure 9. Collector-Emitter Dark Current vs. Ambient Temperature t – SWITCHING TIME (μs) tPLH 15 tr 0.1 t – SWITCHING TIME (μs) Refer to Figure 15 for switching time circuit IF = 10 mA VCC = 5 V 25 RL = 1 kΩ 12 tf tPLH 8 ts 4 tr tPHL t PLH I F = 1.6 mA R L = 4.7 kΩ -20 0 20 40 60 80 100 tPHL, I F = 1.6 mA, RL = 4.7 kΩ t PHL, I F = 3 mA, RL = 3.3 kΩ VCC = 5 V TA = 25°C 1 10 120 TA – AMBIENT TEMPERATURE (°C) 100 1000 10000 RBE – BASE-EMITTER RESISTANCE (kΩ) Figure 13. Switching Time vs. Ambient Temperature ©1983 Fairchild Semiconductor Corporation MCT5210M, MCT5211M Rev. 1.3 t PHL, I F = 1 mA, RL = 10 kΩ 10 td 0 -40 t PLH, I F = 1 mA, RL = 10 kΩ t PLH I F = 3 mA R L = 3.3 kΩ Figure 14. Switching Time vs. Base-Emitter Resistance www.fairchildsemi.com 8 MCT5210M, MCT5211M — 6-Pin DIP Low Input Current Phototransistor Optocouplers Typical Performance Curves (Continued) TA = 25°C unless otherwise specified. VCC = 5.0 V VCC = 5.0 V Pulse Gen ZO = 50Ω f = 10KHz 10% D.F. Pulse Gen ZO = 50Ω f = 10KHz 10% D.F. 1K VO 1K 4.7K D1 IF monitor VO IF monitor 330K 100 Ω D2 D3 330K 100 Ω D4 tr, tf, td, ts TEST CIRCUIT tPHL, tPLH TEST CIRCUIT Figure 15. Switching Time Test Circuits INPUT 50% (IF) 0 td 90% OUTPUT (VO) 90% tPHL tPLH 1.3 V 10% 1.3 V 10% 0 ts tr tf Figure 16. Switching Time Waveforms ©1983 Fairchild Semiconductor Corporation MCT5210M, MCT5211M Rev. 1.3 www.fairchildsemi.com 9 MCT5210M, MCT5211M — 6-Pin DIP Low Input Current Phototransistor Optocouplers Switching Time Test Circuits and Waveforms MCT5210M, MCT5211M — 6-Pin DIP Low Input Current Phototransistor Optocouplers Reflow Profile 300 260°C 280 260 > 245°C = 42 s 240 220 200 180 °C Time above 183°C = 90 s 160 140 120 1.822°C/s Ramp-up rate 100 80 60 40 33 s 20 0 0 60 120 180 270 360 Time (s) Figure 17. Reflow Profile ©1983 Fairchild Semiconductor Corporation MCT5210M, MCT5211M Rev. 1.3 www.fairchildsemi.com 10 Part Number Package Packing Method MCT5210M DIP 6-Pin Tube (50 Units) MCT5210SM SMT 6-Pin (Lead Bend) Tube (50 Units) MCT5210SR2M SMT 6-Pin (Lead Bend) Tape and Reel (1000 Units) MCT5210VM DIP 6-Pin, DIN EN/IEC60747-5-5 Option Tube (50 Units) MCT5210SVM SMT 6-Pin (Lead Bend), DIN EN/IEC60747-5-5 Option Tube (50 Units) MCT5210SR2VM SMT 6-Pin (Lead Bend), DIN EN/IEC60747-5-5 Option Tape and Reel (1000 Units) MCT5210TVM DIP 6-Pin, 0.4” Lead Spacing, DIN EN/IEC60747-5-5 Option Tube (50 Units) Note: 8. The product orderable part number system listed in this table also applies to the MCT5211M device. Marking Information 1 V 3 MCT5210 2 X YY Q 6 5 4 Figure 18. Top Mark Table 1. Top Mark Definitions 1 Fairchild Logo 2 Device Number 3 DIN EN/IEC60747-5-5 Option (only appears on component ordered with this option) 4 One-Digit Year Code, e.g., “5” 5 Digit Work Week, Ranging from “01” to “53” 6 Assembly Package Code ©1983 Fairchild Semiconductor Corporation MCT5210M, MCT5211M Rev. 1.3 www.fairchildsemi.com 11 MCT5210M, MCT5211M — 6-Pin DIP Low Input Current Phototransistor Optocouplers Ordering Information ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. 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