MGSF2N02ELT1G

MGSF2N02EL, MVSF2N02EL MOSFET – N-Channel, SOT-23 2.8 A, 20 V www.onsemi.com These miniature surface mount MOSFETs low RDS(on) assure minimal power loss and conserve energy, making these devices ideal for use in space sensitive power management circuitry. 2.8 A, 20 V RDS(on) = 85 mW (max) Features • • • • • Low RDS(on) Provides Higher Efficiency and Extends Battery Life Miniature SOT−23 Surface Mount Package Saves Board Space IDSS Specified at Elevated Temperature AEC Q101 Qualified and PPAP Capable − MVSF2N02EL These Devices are Pb−Free and are RoHS Compliant N−Channel D Applications G • DC−DC Converters • Power Management in Portable and Battery Powered Products, ie: S Computers, Printers, PCMCIA Cards, Cellular and Cordless Telephones MARKING DIAGRAM MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Rating Drain−to−Source Voltage Gate−to−Source Voltage − Continuous Symbol Value Unit VDSS 20 Vdc VGS ± 8.0 Vdc Drain Current − Continuous @ TA = 25°C − Single Pulse (tp = 10 ms) ID IDM 2.8 5.0 Total Power Dissipation @ TA = 25°C PD 1.25 W Operating and Storage Temperature Range TJ, Tstg − 55 to 150 °C Thermal Resistance Junction−to−Ambient (Note 1) Thermal Resistance Junction−to−Ambient (Note 2) Maximum Lead Temperature for Soldering Purposes, 1/8″ from case for 10 seconds A RqJA °C/W 100 3 SOT−23 CASE 318 STYLE 21 1 1 2 xxx M G = Specific Device Code = Date Code = Pb−Free Package PIN ASSIGNMENT 3 300 TL NT MG G Drain 260 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. 1” Pad, t < 10 sec. 2. Min pad, steady state. 1 Gate 2 Source ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 2 of this data sheet. © Semiconductor Components Industries, LLC, 2002 May, 2019 − Rev. 5 1 Publication Order Number: MGSF2N02EL/D MGSF2N02EL, MVSF2N02EL ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Drain−to−Source Breakdown Voltage (Note 3) (VGS = 0 Vdc, ID = 10 mAdc) Temperature Coefficient (Positive) V(BR)DSS Min Typ Max Unit 20 − − 22 − − Vdc mV/°C − − − − 1.0 10 − − "100 nA 0.5 − − −2.3 1.0 − Vdc mV/°C − − 78 105 85 115 Ciss − 150 − Coss − 130 − Crss − 45 − td(on) − 6.0 − tr − 95 − td(off) − 28 − tf − 125 − QT − 3.5 − Qgs − 0.6 − Qgd − 1.5 − − − 0.76 − 1.2 − trr − 104 − ta − 42 − tb − 62 − QRR − 0.20 − OFF CHARACTERISTICS Zero Gate Voltage Drain Current (VDS = 20 Vdc, VGS = 0 Vdc) (VDS = 20 Vdc, VGS = 0 Vdc, TJ = 125°C) IDSS Gate−Source Leakage Current (VGS = $ 8.0 Vdc, VDS = 0 Vdc) IGSS mAdc ON CHARACTERISTICS (Note 3) Gate−Source Threshold Voltage (VDS = VGS, ID = 250 mAdc) Threshold Temperature Coefficient (Negative) VGS(th) Static Drain−to−Source On−Resistance (VGS = 4.5 Vdc, ID = 3.6 A) (VGS = 2.5 Vdc, ID = 3.1 A) RDS(on) mW DYNAMIC CHARACTERISTICS Input Capacitance (VDS = 5.0 Vdc, VGS = 0 V, f = 1.0 MHz) Output Capacitance Transfer Capacitance pF SWITCHING CHARACTERISTICS (Note 4) Turn−On Delay Time Rise Time (VDD = 16 Vdc, ID = 2.8 Adc, Vgs = 4.5 V, RG = 2.3 W) Turn−Off Delay Time Fall Time Gate Charge (VDS = 16 Vdc, ID = 1.75 Adc, VGS = 4.0 Vdc) (Note 3) ns nC SOURCE−DRAIN DIODE CHARACTERISTICS Forward Voltage (IS = 1.0 Adc, VGS = 0 Vdc) (Note 3) Reverse Recovery Time (IS = 1.0 Adc, VGS = 0 Vdc, dlS/ dt = 100 A/ms) (Note 3) Reverse Recovery Stored Charge VSD V ns mC Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 3. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%. 4. Switching characteristics are independent of operating junction temperature. ORDERING INFORMATION Package Shipping† SOT−23 (Pb−Free) 3,000 / Tape & Reel Device MGSF2N02ELT1G MVSF2N02ELT1G* †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. *MVSF Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable. www.onsemi.com 2 MGSF2N02EL, MVSF2N02EL TYPICAL CHARACTERISTICS 5 TJ = 25°C VGS = 7 V VGS = 5 V 6 ID, DRAIN CURRENT (AMPS) ID, DRAIN CURRENT (AMPS) 8 VGS = 2.2 V VGS = 2.0 V VGS = 2.6 V 4 VGS = 1.8 V VGS = 3 V VGS = 1.6 V 2 VDS w 10 V 4 3 2 TJ = 55°C TJ = 100°C 1 VGS = 1.2 V 0 0 0.5 1 1.5 2 0 2.5 0 VDS, DRAIN−TO−SOURCE VOLTAGE (V) 1.5 2 2.5 3 Figure 2. Transfer Characteristics 0.3 0.12 ID = 3.6 A 0.08 0.06 TJ = 25°C RDS(on), DRAIN−TO−SOURCE RESISTANCE (W) RDS(on), DRAIN−TO−SOURCE RESISTANCE (W) TJ = 25°C 0.10 0.2 0.1 0.04 0 0 2 4 6 8 VGS = 2.5 V 4 VGS, GATE−TO−SOURCE VOLTAGE (V) 1.8 6 7 8 Figure 4. On−Resistance vs. Gate Voltage 10000 ID = 3.6 A VGS = 4.5 V VGS = 0 V IDSS, LEAKAGE (nA) 1.5 1.2 0.9 0.6 −50 5 −ID, DRAIN CURRENTS (AMPS) Figure 3. On−Resistance vs. Gate−to−Source Voltage RDS(on), DRAIN−TO−SOURCE RESISTANCE (NORMALIZED) 1 VGS, GATE−TO−SOURCE VOLTAGE (V) Figure 1. On−Region Characteristics 0.02 0.5 −25 0 25 50 75 100 125 150 TJ = 150°C 1000 TJ = 100°C 100 10 4 TJ, JUNCTION TEMPERATURE (°C) 8 12 16 VDS, DRAIN−TO−SOURCE VOLTAGE (V) Figure 5. On−Resistance Variation with Temperature www.onsemi.com 3 Figure 6. Drain−to−Source Leakage Current vs. Voltage 20 MGSF2N02EL, MVSF2N02EL TYPICAL CHARACTERISTICS VGS, GATE−TO−SOURCE VOLTAGE (V) TJ = 25°C 300 C, CAPACITANCE (pF) 250 200 150 Ciss 100 Coss 50 Crss 0 0 4 8 12 16 20 5 QT 4 3 Q1 Q2 2 1 0 ID = 3.6 A TJ = 25°C 0 1 DRAIN−TO−SOURCE VOLTAGE (VOLTS) Figure 7. Capacitance Variation Figure 8. Gate−to−Source Voltage vs. Total Charge IS, SOURCE CURRENT (AMPS) VDD = 16 V ID = 2.8 A VGS = 4.5 V tf 100 t, TIME (ns) 3 1.8 1000 tr td(off) 10 1 2 Qg, TOTAL GATE CHARGE, (nC) −VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS) 350 td(on) 1 10 VGS = 4.5 V TJ = 25°C 1.5 1.2 0.9 0.6 0.3 0 0.20 100 0.30 0.40 0.50 0.60 0.70 0.80 0.90 VSD, SOURCE−TO−DRAIN VOLTAGE (V) RG, GATE RESISTANCE (W) Figure 9. Resistive Switching Time Variation vs. Gate Resistance Figure 10. Diode Forward Voltage vs. Current www.onsemi.com 4 1.00 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS SOT−23 (TO−236) CASE 318−08 ISSUE AS DATE 30 JAN 2018 SCALE 4:1 D 0.25 3 E 1 2 T HE NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF THE BASE MATERIAL. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR GATE BURRS. DIM A A1 b c D E e L L1 HE T L 3X b L1 VIEW C e TOP VIEW A A1 SIDE VIEW SEE VIEW C c MIN 0.89 0.01 0.37 0.08 2.80 1.20 1.78 0.30 0.35 2.10 0° MILLIMETERS NOM MAX 1.00 1.11 0.06 0.10 0.44 0.50 0.14 0.20 2.90 3.04 1.30 1.40 1.90 2.04 0.43 0.55 0.54 0.69 2.40 2.64 −−− 10 ° MIN 0.035 0.000 0.015 0.003 0.110 0.047 0.070 0.012 0.014 0.083 0° INCHES NOM 0.039 0.002 0.017 0.006 0.114 0.051 0.075 0.017 0.021 0.094 −−− MAX 0.044 0.004 0.020 0.008 0.120 0.055 0.080 0.022 0.027 0.104 10° GENERIC MARKING DIAGRAM* END VIEW RECOMMENDED SOLDERING FOOTPRINT XXXMG G 1 3X 2.90 3X XXX = Specific Device Code M = Date Code G = Pb−Free Package 0.90 *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “ G”, may or may not be present. 0.95 PITCH 0.80 DIMENSIONS: MILLIMETERS STYLE 1 THRU 5: CANCELLED STYLE 6: PIN 1. BASE 2. EMITTER 3. COLLECTOR STYLE 7: PIN 1. EMITTER 2. BASE 3. COLLECTOR STYLE 9: PIN 1. ANODE 2. ANODE 3. CATHODE STYLE 10: PIN 1. DRAIN 2. SOURCE 3. GATE STYLE 11: STYLE 12: PIN 1. ANODE PIN 1. CATHODE 2. CATHODE 2. CATHODE 3. CATHODE−ANODE 3. ANODE STYLE 15: PIN 1. GATE 2. CATHODE 3. ANODE STYLE 16: PIN 1. ANODE 2. CATHODE 3. CATHODE STYLE 17: PIN 1. NO CONNECTION 2. ANODE 3. CATHODE STYLE 18: STYLE 19: STYLE 20: PIN 1. NO CONNECTION PIN 1. CATHODE PIN 1. CATHODE 2. CATHODE 2. ANODE 2. ANODE 3. GATE 3. ANODE 3. CATHODE−ANODE STYLE 21: PIN 1. GATE 2. SOURCE 3. DRAIN STYLE 22: PIN 1. RETURN 2. OUTPUT 3. INPUT STYLE 23: PIN 1. ANODE 2. ANODE 3. CATHODE STYLE 24: PIN 1. GATE 2. DRAIN 3. SOURCE STYLE 27: PIN 1. CATHODE 2. CATHODE 3. CATHODE STYLE 28: PIN 1. ANODE 2. ANODE 3. ANODE DOCUMENT NUMBER: DESCRIPTION: 98ASB42226B SOT−23 (TO−236) STYLE 8: PIN 1. ANODE 2. NO CONNECTION 3. CATHODE STYLE 13: PIN 1. SOURCE 2. DRAIN 3. GATE STYLE 25: PIN 1. ANODE 2. CATHODE 3. GATE STYLE 14: PIN 1. CATHODE 2. GATE 3. ANODE STYLE 26: PIN 1. CATHODE 2. ANODE 3. NO CONNECTION Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. 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