MJ21193G

MJ21193-PNP MJ21194-NPN Silicon Power Transistors The MJ21193 (PNP) and MJ21194 (NPN) utilize Perforated Emitter technology and are specifically designed for high power audio output, disk head positioners and linear applications. http://onsemi.com Features • • • • • 16 AMP COMPLEMENTARY SILICON POWER TRANSISTORS 250 VOLTS, 250 WATTS Total Harmonic Distortion Characterized High DC Current Gain Excellent Gain Linearity High SOA These Devices are Pb−Free and are RoHS Compliant* SCHEMATIC Rating Symbol Value Unit Collector−Emitter Voltage VCEO 250 Vdc Collector−Base Voltage VCBO 400 Vdc Emitter−Base Voltage VEBO 5 Vdc Collector−Emitter Voltage − 1.5 V VCEX 400 Vdc IC 16 Adc ICM 30 Adc Base Current − Continuous IB 5 Adc Total Power Dissipation @ TC = 25°C Derate Above 25°C PD 250 1.43 W W/°C TJ, Tstg −   65 to +200 °C Collector Current − Continuous Collector Current − Peak (Note 1) Operating and Storage Junction Temperature Range NPN PNP MAXIMUM RATINGS Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Pulse Test: Pulse Width = 5 ms, Duty Cycle ≤ 10%. (continued) CASE 3 1 BASE 1 BASE EMITTER 2 Symbol Max Unit Thermal Resistance, Junction−to−Case RqJC 0.7 °C/W EMITTER 2 MARKING DIAGRAM 3 1 2 MJ2119xG AYYWW MEX TO−204AA (TO−3) CASE 1−07 STYLE 1 MJ2119x = Device Code x = 3 or 4 G = Pb−Free Package A = Assembly Location YY = Year WW = Work Week MEX = Country of Origin THERMAL CHARACTERISTICS Characteristic CASE 3 ORDERING INFORMATION *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. © Semiconductor Components Industries, LLC, 2013 September, 2013 − Rev. 6 1 Device Package Shipping† MJ21193G TO−3 (Pb−Free) 100 Units / Tray MJ21194G TO−3 (Pb−Free) 100 Units / Tray †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Publication Order Number: MJ21193/D MJ21193 − PNP MJ21194 − NPN ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Symbol Min Typ Max Unit VCEO(sus) 250 − − Vdc Collector Cutoff Current (VCE = 200 Vdc, IB = 0) ICEO − − 100 mAdc Emitter Cutoff Current (VCE = 5 Vdc, IC = 0) IEBO − − 100 mAdc Collector Cutoff Current (VCE = 250 Vdc, VBE(off) = 1.5 Vdc) ICEX − 100 mAdc Characteristic OFF CHARACTERISTICS Collector−Emitter Sustaining Voltage (IC = 100 mAdc, IB = 0) SECOND BREAKDOWN Second Breakdown Collector Current with Base Forward Biased (VCE = 50 Vdc, t = 1 s (non−repetitive) (VCE = 80 Vdc, t = 1 s (non−repetitive) IS/b Adc 5 2.5 − − − − 25 8 − − − − 2.2 − − − − 1.4 4 ON CHARACTERISTICS DC Current Gain (IC = 8 Adc, VCE = 5 Vdc) (IC = 16 Adc, IB = 5 Adc) hFE Base−Emitter On Voltage (IC = 8 Adc, VCE = 5 Vdc) VBE(on) Collector−Emitter Saturation Voltage (IC = 8 Adc, IB = 0.8 Adc) (IC = 16 Adc, IB = 3.2 Adc) VCE(sat) 75 Vdc Vdc DYNAMIC CHARACTERISTICS Total Harmonic Distortion at the Output VRMS = 28.3 V, f = 1 kHz, PLOAD = 100 WRMS (Matched pair hFE = 50 @ 5 A/5 V) THD hFE unmatched hFE matched Current Gain Bandwidth Product (IC = 1 Adc, VCE = 10 Vdc, ftest = 1 MHz) Output Capacitance (VCB = 10 Vdc, IE = 0, ftest = 1 MHz) NOTE: % − 0.8 − − 0.08 − fT 4 − − MHz Cob − − 500 pF Pulse Test: Pulse Width = 300 ms, Duty Cycle ≤2% NPN MJ21194 f, T CURRENT GAIN BANDWIDTH PRODUCT (MHz) f, T CURRENT GAIN BANDWIDTH PRODUCT (MHz) PNP MJ21193 6.5 6.0 VCE = 10 V 5.5 5V 5.0 4.5 4.0 3.5 3.0 0.1 TJ = 25°C ftest = 1 MHz 1.0 IC COLLECTOR CURRENT (AMPS) 10 8.0 7.0 10 V 6.0 5.0 VCE = 5 V 4.0 3.0 2.0 1.0 0 0.1 Figure 1. Typical Current Gain Bandwidth Product TJ = 25°C ftest = 1 MHz 1.0 IC COLLECTOR CURRENT (AMPS) Figure 2. Typical Current Gain Bandwidth Product http://onsemi.com 2 10 MJ21193 − PNP MJ21194 − NPN TYPICAL CHARACTERISTICS PNP MJ21193 NPN MJ21194 1000 hFE , DC CURRENT GAIN hFE , DC CURRENT GAIN 1000 TJ = 100°C 25°C 100 -25°C TJ = 100°C 25°C 100 -25°C VCE = 20 V 10 0.1 VCE = 20 V 1.0 10 IC COLLECTOR CURRENT (AMPS) 10 0.1 100 Figure 4. DC Current Gain, VCE = 20 V PNP MJ21193 NPN MJ21194 hFE , DC CURRENT GAIN hFE , DC CURRENT GAIN 1000 TJ = 100°C 25°C 100 -25°C TJ = 100°C 25°C 100 -25°C VCE = 5 V 10 0.1 VCE = 20 V 1.0 10 IC COLLECTOR CURRENT (AMPS) 10 0.1 100 Figure 5. DC Current Gain, VCE = 5 V 1.0 10 IC COLLECTOR CURRENT (AMPS) 100 Figure 6. DC Current Gain, VCE = 5 V PNP MJ21193 NPN MJ21194 35 30 25 20 IB = 2 A IB = 2 A 30 I C, COLLECTOR CURRENT (A) 1.5 A I C, COLLECTOR CURRENT (A) 100 Figure 3. DC Current Gain, VCE = 20 V 1000 1A 15 0.5 A 10 5.0 1.5 A 25 1A 20 15 0.5 A 10 5.0 TJ = 25°C 0 1.0 10 IC COLLECTOR CURRENT (AMPS) TJ = 25°C 0 0 5.0 10 15 20 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) 25 0 Figure 7. Typical Output Characteristics 5.0 10 15 20 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) Figure 8. Typical Output Characteristics http://onsemi.com 3 25 MJ21193 − PNP MJ21194 − NPN TYPICAL CHARACTERISTICS PNP MJ21193 NPN MJ21194 1.4 2.5 TJ = 25°C 2.0 IC/IB = 10 SATURATION VOLTAGE (VOLTS) SATURATION VOLTAGE (VOLTS) 3.0 1.5 VBE(sat) 1.0 0.5 1.2 TJ = 25°C 1.0 IC/IB = 10 0.8 0.6 0.4 0.2 VCE(sat) 0 0.1 1.0 10 IC, COLLECTOR CURRENT (AMPS) VCE(sat) 0 0.1 100 Figure 9. Typical Saturation Voltages 1.0 10 IC, COLLECTOR CURRENT (AMPS) 100 Figure 10. Typical Saturation Voltages PNP MJ21193 NPN MJ21194 10 10 VBE(on) , BASE-EMITTER VOLTAGE (VOLTS) VBE(on) , BASE-EMITTER VOLTAGE (VOLTS) VBE(sat) TJ = 25°C 1.0 VCE = 20 V (SOLID) 0.1 0.1 VCE = 5 V (DASHED) 1.0 10 IC, COLLECTOR CURRENT (AMPS) 100 TJ = 25°C VCE = 20 V (SOLID) 1.0 0.1 0.1 Figure 11. Typical Base−Emitter Voltage VCE = 5 V (DASHED) 1.0 10 IC, COLLECTOR CURRENT (AMPS) 100 Figure 12. Typical Base−Emitter Voltage IC, COLLECTOR CURRENT (AMPS) 100 There are two limitations on the power handling ability of a transistor; average junction temperature and secondary breakdown. Safe operating area curves indicate IC − VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure 13 is based on TJ(pk) = 200°C; TC is variable depending on conditions. At high case temperatures, thermal limitations will reduce the power than can be handled to values less than the limitations imposed by second breakdown. 1 SEC 10 TC = 25°C 1.0 0.1 1.0 10 100 1000 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) Figure 13. Active Region Safe Operating Area http://onsemi.com 4 MJ21193 − PNP MJ21194 − NPN 10000 10000 Cib TJ = 25°C C, CAPACITANCE (pF) 1000 Cob Cib 1000 Cob f(test) = 1 MHz 100 0.1 f(test) = 1 MHz 1.0 10 100 0.1 100 1.0 10 VR, REVERSE VOLTAGE (VOLTS) VR, REVERSE VOLTAGE (VOLTS) Figure 14. MJ21193 Typical Capacitance Figure 15. MJ21194 Typical Capacitance 1.2 1.1 T , TOTAL HARMONIC HD DISTORTION (%) C, CAPACITANCE (pF) TJ = 25°C 1.0 0.9 0.8 0.7 0.6 10 100 1000 FREQUENCY (Hz) 10000 100000 Figure 16. Typical Total Harmonic Distortion +50 V AUDIO PRECISION MODEL ONE PLUS TOTAL HARMONIC DISTORTION ANALYZER 50 W SOURCE AMPLIFIER DUT 0.5 W 0.5 W DUT -50 V Figure 17. Total Harmonic Distortion Test Circuit http://onsemi.com 5 8.0 W 100 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS TO−204 (TO−3) CASE 1−07 ISSUE Z DATE 05/18/1988 SCALE 1:1 A N NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. ALL RULES AND NOTES ASSOCIATED WITH REFERENCED TO-204AA OUTLINE SHALL APPLY. C −T− E D K 2 PL 0.13 (0.005) U T Q M M Y DIM A B C D E G H K L N Q U V M −Y− L V SEATING PLANE 2 H G B M T Y 1 −Q− 0.13 (0.005) INCHES MIN MAX 1.550 REF --1.050 0.250 0.335 0.038 0.043 0.055 0.070 0.430 BSC 0.215 BSC 0.440 0.480 0.665 BSC --0.830 0.151 0.165 1.187 BSC 0.131 0.188 MILLIMETERS MIN MAX 39.37 REF --26.67 6.35 8.51 0.97 1.09 1.40 1.77 10.92 BSC 5.46 BSC 11.18 12.19 16.89 BSC --21.08 3.84 4.19 30.15 BSC 3.33 4.77 M STYLE 1: PIN 1. BASE 2. EMITTER CASE: COLLECTOR STYLE 2: PIN 1. BASE 2. COLLECTOR CASE: EMITTER STYLE 3: PIN 1. GATE 2. SOURCE CASE: DRAIN STYLE 4: PIN 1. GROUND 2. INPUT CASE: OUTPUT STYLE 6: PIN 1. GATE 2. EMITTER CASE: COLLECTOR STYLE 7: PIN 1. ANODE 2. OPEN CASE: CATHODE STYLE 8: PIN 1. CATHODE #1 2. CATHODE #2 CASE: ANODE STYLE 9: PIN 1. ANODE #1 2. ANODE #2 CASE: CATHODE STYLE 5: PIN 1. CATHODE 2. EXTERNAL TRIP/DELAY CASE: ANODE ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. 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